ST M74HC4316 User Manual

M74HC4316

QUAD BILATERAL SWITCH

■ HIGH SPEED:

t

= 13ns (TYP.) at VCC = 6V

PD

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at Vcc = 5V

CC

■ LOW "ON" RESISTANCE:

120Ω TY P. (V 50Ω TY P. (V 35Ω TY P. (V

■ WIDE ANALOG INPUT VOLTAGE

RANGE

■ LOW CROSSTALK BETWEEN SWITCHES

■ FA ST SWITCHING

■ SINE WAVE DISTORTION:

± 6v

0.020 at V

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ PIN AND FUNCTION COMPATIBLE WITH

NIL

- VEE = 2V)

CC

- VEE = 4.5V)

CC

- VEE = 9V)

CC

- VEE = 9V

CC

= 28 % VCC (MIN.)

74 SERIES 4316

DESCRIPTION

The M74HC4316 is an high speed CMOS QUAD BILATERAL SW ITCH fabricated with silicon gate

2

C

MOS technology. This device has four independent analogue switches. Each switch has two input/output terminals (nI/O, nO/I) and an active high select input (nC).

TSSOPDIP SOP

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC4316B1R

SOP M74HC4316M1R M74HC4316RM13TR

TSSOP M74HC4316TTR

When the enable input is high, all four analog switches are off. The supply vol tage for the dig ital signals applied to V

and GND must be whitin

CC

the range 0 to 6 V. The voltage swing on the analogue Inputs/Outputs can be between V (positive limit) and V voltage betwee n V

CC

(negative limit). The

EE

and VEE must not exceed

CC

12V. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYM BOLS

1/11July 2001

M74HC4316

LOGIC DIAGRAM PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 4, 10, 13 1 to 4 I/O Independent Inputs/Out-

2, 3, 11, 12 1 to 4 O/I Independent Outputs/

7E

15, 5, 6, 14 1C to 4C Enable Inputs (Active

9V 8 GND Ground (0V)

16 V

TRUTH TABLE

EE

CC

puts

Inputs Enable Inputs (Active

LOW)

High) Negative Supply Voltage

Positive Supply Voltage

E

C SWITCH FUNCTION

LH ON L L OFF H X OFF

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

- VEESupply Voltage

CC

V

I

OK

I

or I

CC

P

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65

Supply Voltage

CC

Control Input Voltage -0.5 to VCC + 0.5

I

Switch Input/Output Voltage V

I/O

DC Input Diode Current

IK

EE

DC Output Diode Current DC Output Source Sink Current Per Output Pin

O

DC VCC or Ground Current

GND

Power Dissipation

D

Storage Temperature

stg

Lead Temperature (10 sec)

L

°C; derate to 300mW by 10mW/°C from 65°C to 85°C

-0.5 to +7 V

-0.5 to +13 V

-0.5 to VCC + 0.5

± 20 mA ± 20 mA ± 25 mA ± 50 mA

500(*) mW

-65 to +150 °C

300 °C

V V

2/11

M74HC4316

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V V

V

- VEESupply Voltage

CC

V

T

t

r

DC SPECIFICATIONS

Symbol Parameter

V

IHC

V

ILC

R

ON

∆R

ON

I

OFF

I

IZ

I

IN

Supply Voltage

CC

Supply Voltage

EE

Input Voltage 0 to V

I

Switch I/O Voltage 0 to V

I/O

Operating Temperature

op

Input Rise and Fall Time VCC = 2.0V

, t

f

V V

CC CC

= 4.5V = 6.0V

Test Condition Value

T

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

High Level

V

CC

EE

(V)

2.0 1.5 1.5 1.5 Control Input Voltage

Low Level Control

6.0 4.2 4.2 4.2

2.0 0.5 0.5 0.5 Input Voltage

6.0 1.8 1.8 1.8 ON Resistance 4.5 GND

4.5 -4.5 50 85 105

6.0 -6.0 30 70 85

2.0 GND

4.5 GND 50 80 100

4.5 -4.5 35 60 75

6.0 -6.0 20 40 60 Difference of ON

4.5 GND VIN = V Resistance between switches

Input/Output

6.0 -6.0 5 10 15

6.0 GND VOS= VCC or GND Leakage Current (SWITCH OFF)

Switch Input

6.0 -6.0

6.0 GND Leakage Current (SWITCH ON,

6.0 -6.0 OUTPUT OPEN)

Control Input

6.0 Current

= V

V

I

V

= VCC to VEE

I/O

I

= 0.1mA

I/O

V

= V

I

V

= VCC or VEE

I/O

I

= 0.1mA

I/O

IHC

V

= VCC to VEE

I/O

I

= 0.1mA

I/O

V

= VCC or GND

IS

V

= V

IN

IHC

V

= VCC or GND

OS

= V

V

IN

IHC

V

= VCC or GND

I

IHC

or V

ILC

70 170 200

120 180 215

10 15 20

±0.06 ± 0.6 ± 2

± 0.1 ± 1 ± 2

±0.06 ± 0.6 ± 2 µA

± 0.1 ± 1 ± 2

-5

10

± 0.1 ± 1 ± 1 µA

2 to 12 V

-6 to 0 V

2 to 12 V

CC CC

-55 to 125 °C

0 to 1000

0 to 500 0 to 400

-40 to 85°C -55 to 125°C

V V

ns

Unit

V4.5 3.15 3.15 3.15

V4.5 1.35 1.35 1.35

Ω

Ω4.5 -4.5 5 10 15

µA

3/11

M74HC4316

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)

Test Condition Value

T

Symbol Par ameter

Φ

Phase Difference

I/O

Between Input and Output

Output Enable

t

PZL

Time

t

PZH

t

PLZ

t

PHZ

f

MAX

, C - OUT)

(E

Output Disable Time

, C - OUT)

(E

Maximum Control Input Frequency

V

CC

EE

(V)

2.0 GND 12 30 40

4.5 GND 3 6 8

6.0 GND 3 5 7

4.5 -4.5 2 4 5

6.0 -6.0 2 4 5

2.0 GND

4.5 GND 14 23 29

R

6.0 GND 12 20 25

= 1KΩ

L

4.5 -4.5 13 21 26

6.0 -6.0 11 18 23

2.0 GND

4.5 GND 28 41 51

R

6.0 GND 24 35 43

= 1KΩ

L

4.5 -4.5 24 34 43

6.0 -6.0 21 29 36

2.0 GND

6.0 GND 1 1

V

R

C

OUT

= 1KΩ

L

= 15 pF

L

= 1/2 V

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

56 115 145

112 205 255

2

-40 to 85°C -55 to 125°C

Unit

ns

MHz4.5 GND 9

CAPACITIVE CHARACTERISTICS

Test Condition Value

T

Symbol Parameter

V

CC

(V)

C

Input Capacitanc e 5 10 10 10 pF

IN

Switch Terminal

I/O

Capacitance Feed Through

IOS

Capacitanc e Power Dissipation

PD

Capacitance

4.5

5.0

-4.5

GND

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

5pF

1pF

16 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R ef er to Test Circui t). Averag e operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC

CC(opr)

Unit

4/11