ST M74HC368 User Manual

M74HC368

HEX BUS BUFFER WITH 3 STATE OUTPUT INVERTING

■HIGH SPEED:

tPD = 9ns (TYP.) at VCC = 6V

■LOW POWER DISSIPATION: ICC = 4μA(MAX.) at TA=25°C

■HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)

■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 6mA (MIN)

■BALANCED PROPAGATION DELAYS: tPLH tPHL

■WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V

■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 368

DIP		SOP	TSSOP
ORDER CODES
PACKAGE		TUBE	T & R
DIP		M74HC368B1R
SOP		M74HC368M1R	M74HC368RM13TR
TSSOP			M74HC368TTR

DESCRIPTION

The M74HC368 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology.

This device contains six buffers, four buffers are controlled by an enable input (G1) and the other two buffers are controlled by the other enable input (G2); the outputs of each buffer group are

enabled when G1 and/or G2 inputs are held low, and when held high, these outputs are disabled in a high-impedance state.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

July 2001

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M74HC368

INPUT AND OUTPUT EQUIVALENT CIRCUIT	PIN DESCRIPTION
	PIN No	SYMBOL	NAME AND FUNCTION
	1, 15	G1, G2	3 State Output Enable
			Input
	2, 4, 6, 10,	1A to 6A	Data Inputs
	12, 14
	3, 5, 7, 9, 11,	1Y to 6Y	Data Outputs
	13
	8	GND	Ground (0V)
	16	VCC	Positive Supply Voltage

TRUTH TABLE
		INPUTS			OUTPUTS
	G			An	Yn
	L			L		H
	L			H		L
	H			X		Z
X: Don’t Care
Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7	V
VI	DC Input Voltage	-0.5 to VCC + 0.5	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	± 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	± 35	mA
ICC or IGND	DC VCC or Ground Current	± 70	mA
PD	Power Dissipation	500(*)	mW
Tstg	Storage Temperature	-65 to +150	°C
TL	Lead Temperature (10 sec)	300	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C

RECOMMENDED OPERATING CONDITIONS

Symbol		Parameter		Value	Unit
VCC	Supply Voltage			2 to 6	V
VI	Input Voltage			0 to VCC	V
VO	Output Voltage			0 to VCC	V
Top	Operating Temperature			-55 to 125	°C
	Input Rise and Fall Time		VCC = 2.0V	0 to 1000	ns
tr, tf			VCC = 4.5V	0 to 500	ns
			VCC = 6.0V	0 to 400	ns

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M74HC368

DC SPECIFICATIONS

			Test Condition						Value
Symbol	Parameter	VCC				TA = 25°C			-40 to 85°C		-55 to 125°C		Unit
		(V)			Min.		Typ.	Max.	Min.	Max.	Min.	Max.
VIH	High Level Input	2.0			1.5				1.5		1.5
	Voltage	4.5			3.15				3.15		3.15		V
		6.0			4.2				4.2		4.2
VIL	Low Level Input	2.0						0.5		0.5		0.5
	Voltage	4.5						1.35		1.35		1.35	V
		6.0						1.8		1.8		1.8
VOH	High Level Output	2.0		IO=-20 μA	1.9		2.0		1.9		1.9
	Voltage
		4.5		IO=-20 μA	4.4		4.5		4.4		4.4
		6.0		IO=-20 μA	5.9		6.0		5.9		5.9		V
		4.5		IO=-6.0 mA	4.18		4.31		4.13		4.10
		6.0		IO=-7.8 mA	5.68		5.8		5.63		5.60
VOL	Low Level Output	2.0		IO=20 μA			0.0	0.1		0.1		0.1
	Voltage
		4.5		IO=20 μA			0.0	0.1		0.1		0.1
		6.0		IO=20 μA			0.0	0.1		0.1		0.1	V
		4.5		IO=6.0 mA			0.17	0.26		0.33		0.40
		6.0		IO=7.8 mA			0.18	0.26		0.33		0.40
II	Input Leakage	6.0		VI = VCC or GND				± 0.1		± 1		± 1	μA
	Current
IOZ	High Impedance			VI = VIH or VIL				± 0.5		± 5		± 10	μA
	Output Leakage	6.0		VO = VCC or GND
	Current
ICC	Quiescent Supply	6.0		VI = VCC or GND				4		40		80	μA
	Current

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