ST M74HC280 User Manual

M74HC280
9 BIT PARITY GENERATOR
HIGH SPEED :
t
= 22ns (TYP.) at VCC = 6V
PD
LOW POWER DISSIPATION:
I
=4µA(MAX.) at TA=25°C
CC
HIGH NOISE IMMUNITY:
V
= V
NIH
SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4mA (MIN)
OH
BALANCED PROPAGATION DELAYS:
t
t
PLH
WIDE OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 6V
CC
PIN AND FUNCTION COMPATIBLE WITH
= 28 % VCC (MIN.)
NIL
PHL
74 SERIES 280
DESCRIPTION
The M74HC280 is an high speed CMOS 9-BIT PARITY GENERATOR fabricated with sili con gate
2
C
MOS technology. It is composed of nine data inputs (A to I) and odd/ even parity outputs (ΣODD and ΣEVEN). The nine data inputs control the output conditions. When the number of high level input is odd, ΣODD output is kept high and ΣEVEN output low.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC280B1R
SOP M74HC280M1R M74HC280RM13TR
TSSOP M74HC280TTR
Conversely, when the output is even, ΣEVEN output is kept high and ΣODD low. The IC generates either odd or even parity making it flexible application. The word-length capability is easily expanded by cascading. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/9July 2001
M74HC280
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
5, 6
8, 9, 10, 11, 12, 13, 1, 2,
4 3 NC No Connection 7 GND Ground (0V)
14
TRUTH TABLE
ΣEVEN
ΣΟDD
A to I Data Inputs
V
CC
Parity Outputs
Positive Supply Voltage
NUMBER OF INPUTS A - I THAT ARE HIGH
LOGIC DIAGRAM
OUTPUTS
ΣEVEN ΣODD
0, 2, 4, 6, 8 H L 1, 3, 5, 7, 9 L H
2/9
M74HC280
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
°C; derate to 300mW by 10mW/°C from 65°C to 85°C
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time VCC = 2.0V
, t
f
V V
CC CC
= 4.5V = 6.0V
-0.5 to +7 V
± 20 mA ± 20 mA ± 25 mA ± 50 mA
500(*) mW
-65 to +150 °C
300 °C
2 to 6 V
CC CC
-55 to 125 °C 0 to 1000 ns
0 to 500 ns 0 to 400 ns
V V
V V
3/9
M74HC280
DC SPECIFICATIONS
Symbol Parameter
V
V
V
V
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current Quiescent Supply
CC
Current
Test Condition Value
V
CC
(V)
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
T
2.0 1.5 1.5 1.5
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
6.0 1.8 1.8 1.8
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
IO=-20 µA I
=-20 µA
O
I
=-20 µA
O
I
=-4.0 mA
O
I
=-5.2 mA
O
IO=20 µA I
=20 µA
O
I
=20 µA
O
I
=4.0 mA
O
I
=5.2 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
4.4 4.5 4.4 4.4
5.9 6.0 5.9 5.9
4.18 4.31 4.13 4.10
5.68 5.8 5.63 5.60
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
0.18 0.26 0.33 0.40 ± 0.1 ± 1 ± 1 µA
44080µA
Unit
V4.5 3.15 3.15 3.15
V4.5 1.35 1.35 1.35
V
V
AC ELECTRICAL CHARACTERISTICS (C
= 50 pF, Input tr = tf = 6ns)
L
Test Condition Value
T
Symbol Parameter
t
TLH tTHL
Output Transition Time
V
CC
(V)
2.0 30 75 95 110
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns4.5 8151922
6.0 7131619
t
PLH tPHL
Propagation Delay Time (Input to ΣEVEN,ΣODD)
2.0 80 200 250 290 ns4.5 26 40 50 58
6.0 22 34 43 49
CAPACITIVE CHARACTERISTICS
Test Condition Value
T
Symbol Parameter
V
CC
(V)
C
C
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R ef er to Test Circui t). Averag e operating current can be obtained by the following equation. I
Input Capacitance
IN
Power Dissipation
PD
Capacitance (note 1)5.0 61 pF
5.0 5101010pF
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
4/9
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC
CC(opr)
Unit
TEST CIRCUIT
CL = 50pF or equivalent (includes jig and p robe capacit ance) R
= Z
of pulse generator (typically 50)
T
OUT
WAVEFORM 1: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
M74HC280
5/9
M74HC280
Plastic DIP-14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
a1 0.51 0.020
B 1.39 1.65 0.055 0.065 b 0.5 0.020
b1 0.25 0.010
D 20 0.787 E 8.5 0.335
e 2.54 0.100
e3 15.24 0.600
F 7.1 0.280
I 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100
6/9
P001A
SO-14 MECHANICAL DATA
M74HC280
DIM.
A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064
b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.019 c1 45° (typ.)
D 8.55 8.75 0.336 0.344
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 7.62 0.300
F 3.8 4.0 0.149 0.157
G 4.6 5.3 0.181 0.208
L 0.5 1.27 0.019 0.050
M 0.68 0.026
S8° (max.)
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
PO13G
7/9
M74HC280
TSSOP14 MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 1.2 0.047
A1 0.05 0.15 0.002 0.004 0.006
A2 0.8 1 1.05 0.031 0.039 0.041
b 0.19 0.30 0.007 0.012
c 0.09 0.20 0.004 0.0089
D 4.9 5 5.1 0.193 0.197 0.201
E 6.2 6.4 6.6 0.244 0.252 0.260
E1 4.3 4.4 4.48 0.169 0.173 0.176
e 0.65 BSC 0.0256 BSC
K0° 8°0° 8°
L 0.45 0.60 0.75 0.018 0.024 0.030
A2
A
A1
b
e
c
K
L
E
D
E1
PIN 1 IDENTIFICATION
8/9
1
0080337D
M74HC280
Information furnished is bel ieved to be accurate and reliable. However, STMicroe lectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li cense is granted by imp lication or otherwise under a ny patent or patent rig hts of STMicroelectronics. Spec ific at ions mentioned in this publication ar e subject to change without notice. This publication supersedes and replaces all information previously supplied. S TMicroelectronics products are not authorized for use as critica l components in life suppo rt devices or systems without express written approval of STMicroelectronics.
Australi a - Brazil - Chi na - Finland - F rance - Germany - Hong Kon g - I ndia - Italy - Japan - Malay sia - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2001 STM icroelectronics - Printed in Ital y - All Rights Reserved
STMicr o el ectronics GROUP OF COMPANIES
Singapo re - Spain - Sweden - Switzerland - Uni ted Kingdom
© http://www.st.com
9/9
Loading...