ST M54HC279, M74HC279 User Manual

M54HC279

.HIGH SPEED

.tPD = 12 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION

.ICC = 2 μA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY

.VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY

.10 LSTTL LOADS

SYMMETRICAL OUTPUT IMPEDANCE

. IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS

.tPLH = tPHL

WIDE OPERATING VOLTAGE RANGE

.VCC (OPR) = 2 V TO 6 V

PIN AND FUNCTION COMPATIBLE WITH 54/74LS279

DESCRIPTION

The M54/74HC279 is a high speed CMOS QUAD S - R LATCH fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

M54HC279

M74HC279

QUAD S - R LATCH

B1R	F1R
(Plastic Package)	(Ceramic Package)

M1R	C1R
(Micro Package)	(Chip Carrier)
ORDER CODES :
M54HC279F1R	M74HC279M1R
M74HC279B1R	M74HC279C1R

PIN CONNECTIONS (top view)

NC =

No Internal

Connection

March 1993

1/10

M54/M74HC279

PIN DESCRIPTION		IEC LOGIC SYMBOL
PIN No	SYMBOL	NAME AND FUNCTION
1, 5, 10. 14	1R to 4R	Reset Inputs (Active LOW)
2, 3, 6, 11,	1S1, 1S2, 2S,	Set Inputs (Active LOW)
12, 15	3S1, 3S2, 4S
4, 7, 9, 13	1Q to 4Q	Outputs
8	GND	Ground (0V)
16	VCC	Positive Supply Voltage

TRUTH TABLE

S #	R	Q
H	H	Q0
L	H	H
H	L	L
L	L	H

NOTE: Q0 = THE LEVEL OF Q BEFORE THE INDICRTED INPUT

CONDITION WAS ESTABLISHED.

#FOR LATCHES WITH DOUBLE S INPUT: H = BOTH S INPUTS HIGH

L = ONE OF BOTH INPUTS LOW

LOGIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7	V
VI	DC Input Voltage	-0.5 to VCC + 0.5	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	± 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Source Sink Current Per Output Pin	± 25	mA
ICC or IGND	DC VCC or Ground Current	± 50	mA
PD	Power Dissipation	500 (*)	mW
Tstg	Storage Temperature	-65 to +150	oC
TL	Lead Temperature (10 sec)	300	oC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.

(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC

2/10

									M54/M74HC279
RECOMMENDED OPERATING CONDITIONS
Symbol			Parameter					Value		Unit
VCC	Supply Voltage							2 to 6		V
VI	Input Voltage							0 to VCC		V
VO	Output Voltage							0 to VCC		V
Top	Operating Temperature: M54HC Series							-55 to +125		oC
			M74HC Series					-40 to +85		oC
tr, tf	Input Rise and Fall Time				VCC = 2 V			0 to 1000		ns
					VCC = 4.5 V			0 to 500
					VCC = 6 V			0 to 400
DC SPECIFICATIONS
		Test Conditions						Value
Symbol	Parameter	VCC			TA = 25 oC			-40 to 85 oC -55 to 125 oC		Unit
					54HC and 74HC			74HC	54HC
		(V)
					Min. Typ. Max. Min. Max. Min. Max.
VIH	High Level Input	2.0			1.5			1.5	1.5
	Voltage	4.5			3.15			3.15	3.15	V
		6.0			4.2			4.2	4.2
VIL	Low Level Input	2.0					0.5	0.5	0.5
	Voltage	4.5					1.35	1.35	1.35	V
		6.0					1.8	1.8	1.8
VOH	High Level	2.0	VI =	IO=-20 μA	1.9	2.0		1.9	1.9
	Output Voltage	4.5			4.4	4.5		4.4	4.4
			VIH							V
		6.0			5.9	6.0		5.9	5.9
			or
		4.5	VIL	IO=-4.0 mA	4.18	4.31		4.13	4.10
		6.0		IO=-5.2 mA	5.68	5.8		5.63	5.60
VOL	Low Level Output	2.0	VI =	IO= 20 μA		0.0	0.1	0.1	0.1
	Voltage	4.5				0.0	0.1	0.1	0.1
			VIH							V
		6.0	or			0.0	0.1	0.1	0.1
		4.5	VIL	IO= 4.0 mA		0.17	0.26	0.33	0.40
		6.0		IO= 5.2 mA		0.18	0.26	0.33	0.40
II	Input Leakage	6.0	VI = VCC or GND				±0.1	±1	±1	μA
	Current
ICC	Quiescent Supply	6.0	VI = VCC or GND				2	20	40	μA
	Current

3/10