ST M74HC253 User Manual

M74HC253

DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT

■HIGH SPEED:

tPD = 16ns (TYP.) at VCC = 6V

■LOW POWER DISSIPATION: ICC = 4μA(MAX.) at TA=25°C

■HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)

■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)

■BALANCED PROPAGATION DELAYS: tPLH tPHL

■WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V

■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 253

DIP		SOP	TSSOP
ORDER CODES
PACKAGE		TUBE	T & R
DIP		M74HC253B1R
SOP		M74HC253M1R	M74HC253RM13TR
TSSOP			M74HC253TTR

DESCRIPTION

The M74HC253 is an high speed CMOS DUAL 4 CHANNEL MULTIPLEXER fabricated with silicon gate C2MOS technology.

Each of these data (1C0-1C3, 2C0-2C3) is selected by the two address inputs A and B. Separate strobe inputs (1G, 2G) are provided for each of the two four-line sections. The strobe input

(nG) can be used to inhibit the data output; the output of M74HC253 is a high impedance while the strobe input is held high.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

July 2001

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M74HC253

INPUT AND OUTPUT EQUIVALENT CIRCUIT				PIN DESCRIPTION
				PIN No	SYMBOL	NAME AND FUNCTION
				1, 15	1G, 2G	Output Enable Inputs
				14, 2	A, B	Common Data Select
						Inputs
				6, 5, 4, 3	1C0 to 1C3	Data Inputs From
						Source 1
				7, 9	1Y, 2Y	3 State Multiplexer
						Outputs
				10, 11, 12,	2C0 to 2C3	Data Inputs From
				13		Source 2
				8	GND	Ground (0V)
				16	VCC	Positive Supply Voltage
TRUTH TABLE
SELECT INPUTS			DATA INPUTS			STROBE
B	A	C0	C1	C2	C3	OUTPUT Y
						G
X	X	X	X	X	X	H	Z
L	L	L	X	X	X	L	L
L	L	H	X	X	X	L	H
L	H	X	L	X	X	L	L
L	H	X	H	X	X	L	H
H	L	X	X	L	X	L	L
H	L	X	X	H	X	L	H
H	H	X	X	X	L	L	L
H	H	X	X	X	H	L	H
X : Don’t Care
Z : High Impedance

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M74HC253

LOGIC DIAGRAM

This logic diagram has not be used to estimate propagation delays

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7	V
VI	DC Input Voltage	-0.5 to VCC + 0.5	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	± 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	± 25	mA
ICC or IGND	DC VCC or Ground Current	± 50	mA
PD	Power Dissipation	500(*)	mW
Tstg	Storage Temperature	-65 to +150	°C
TL	Lead Temperature (10 sec)	300	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C

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M74HC253

RECOMMENDED OPERATING CONDITIONS

Symbol		Parameter		Value	Unit
VCC	Supply Voltage			2 to 6	V
VI	Input Voltage			0 to VCC	V
VO	Output Voltage			0 to VCC	V
Top	Operating Temperature			-55 to 125	°C
	Input Rise and Fall Time		VCC = 2.0V	0 to 1000	ns
tr, tf			VCC = 4.5V	0 to 500	ns
			VCC = 6.0V	0 to 400	ns

DC SPECIFICATIONS

			Test Condition						Value
Symbol	Parameter	VCC				TA = 25°C			-40 to 85°C		-55 to 125°C		Unit
		(V)			Min.		Typ.	Max.	Min.	Max.	Min.	Max.
VIH	High Level Input	2.0			1.5				1.5		1.5
	Voltage	4.5			3.15				3.15		3.15		V
		6.0			4.2				4.2		4.2
VIL	Low Level Input	2.0						0.5		0.5		0.5
	Voltage	4.5						1.35		1.35		1.35	V
		6.0						1.8		1.8		1.8
VOH	High Level Output	2.0		IO=-20 μA	1.9		2.0		1.9		1.9
	Voltage
		4.5		IO=-20 μA	4.4		4.5		4.4		4.4
		6.0		IO=-20 μA	5.9		6.0		5.9		5.9		V
		4.5		IO=-4.0 mA	4.18		4.31		4.13		4.10
		6.0		IO=-5.2 mA	5.68		5.8		5.63		5.60
VOL	Low Level Output	2.0		IO=20 μA			0.0	0.1		0.1		0.1
	Voltage
		4.5		IO=20 μA			0.0	0.1		0.1		0.1
		6.0		IO=20 μA			0.0	0.1		0.1		0.1	V
		4.5		IO=4.0 mA			0.17	0.26		0.33		0.40
		6.0		IO=5.2 mA			0.18	0.26		0.33		0.40
II	Input Leakage	6.0		VI = VCC or GND				± 0.1		± 1		± 1	μA
	Current
IOZ	High Impedance	6.0		VI = VIH or VIL				± 0.5		± 5		± 5	μA
	Output Leakage			VO = VCC or GND
	Current
ICC	Quiescent Supply	6.0		VI = VCC or GND				4		40		80	μA
	Current

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