ST M74HC240 User Manual

1/10July 2001

■ HIGH SPEED:

t

PD

= 10ns (TYP.) at V

CC

= 6V

■ LOW POWER DISSIPATION:

I

CC

= 4µA(MAX.) at T

A

=25°C

■ HIGH NOISE IMMUNITY:

V

NIH

= V

NIL

= 28 % V

CC

(MIN.)

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

| = I

OL

= 6mA (MIN)

■ BALANCED PROPAGATION DELAYS:

t

PLH

≅ t

PHL

■ WIDE OPERATING VOLTAGE RANGE:

V

CC

(OPR) = 2V to 6V

■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 240

DESCRIPTION

The M74HC240 is an advanced high-speed

CMOS OCTAL BUS BUFFER (3-STATE)

fabricated with silicon gate C

2

MOS technology.

G

control input governs four BUS BUFFERs.

This device is designed to be used with 3 state

memory address drivers, etc.

All inputs are equipped with protection circuits

against static discharge and transient excess

voltage.

M74HC240

OCTAL BUS BUFFER

WITH 3 STATE OUTPUTS (INVERTED)

PIN CONNECTION AND IEC LOGIC SYMBOLS

ORDER CODES

PACKAGE TUBE T & R

DIP M74HC240B1R

SOP M74HC240M1R M74HC240RM13TR

TSSOP M74HC240TTR

TSSOPDIP SOP

M74HC240

2/10

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

X : Don’t Care

Z : High Impedance

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is

not implied

(*) 500mW at 65

°C

; derate to 30 0m W by 10mW/

°C

from 65

°C to 85°C

RECOMMENDED OPERATING CONDITIONS

PIN No SYMBOL NAME AND FUNCTION

11G

Output Enable Input

2, 4, 6, 8 1A1 to 1A4 Data Inputs

9, 7, 5, 3 2Y1

to 2Y4 Data Outputs

11, 13, 15,

17

2A1 to 2A4 Data Inputs

18, 16, 14,

12

1Y1

to 1Y4 Data Outputs

19 2G

Output Enable Input

10 GND Ground (0V)

20 V

CC

Positive Supply Voltage

INPUTS OUTPUT

G

An Yn

LLH

LHL

HXZ

Symbol Parameter Value Unit

V

CC

Supply Voltage

-0.5 to +7 V

V

I

DC Input Voltage -0.5 to V

CC

+ 0.5

V

V

O

DC Output Voltage -0.5 to V

CC

+ 0.5

V

I

IK

DC Input Diode Current

± 20 mA

I

OK

DC Output Diode Current

± 20 mA

I

O

DC Output Current

± 35 mA

I

CC

or I

GND

DC V

CC

or Ground Current

± 70 mA

P

D

Power Dissipation

500(*) mW

T

stg

Storage Temperature

-65 to +150 °C

T

L

Lead Temperature (10 sec)

300 °C

Symbol Parameter Value Unit

V

CC

Supply Voltage

2 to 6 V

V

I

Input Voltage 0 to V

CC

V

V

O

Output Voltage 0 to V

CC

V

T

op

Operating Temperature

-55 to 125 °C

t

r

, t

f

Input Rise and Fall Time V

CC

= 2.0V

0 to 1000 ns

V

CC

= 4.5V

0 to 500 ns

V

CC

= 6.0V

0 to 400 ns

M74HC240

3/10

DC SPECIFICATIONS

Symbol Parameter

Test Condition Value

Unit

V

CC

(V)

T

A

= 25°C

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

V

IH

High Level Input

Voltage

2.0 1.5 1.5 1.5

V4.5 3.15 3.15 3.15

6.0 4.2 4.2 4.2

V

IL

Low Level Input

Voltage

2.0 0.5 0.5 0.5

V4.5 1.35 1.35 1.35

6.0 1.8 1.8 1.8

V

OH

High Level Output

Voltage

2.0

I

O

=-20 µA

1.9 2.0 1.9 1.9

V

4.5

I

O

=-20 µA

4.4 4.5 4.4 4.4

6.0

I

O

=-20 µA

5.9 6.0 5.9 5.9

4.5

I

O

=-6.0 mA

4.18 4.31 4.13 4.10

6.0

I

O

=-7.8 mA

5.68 5.8 5.63 5.60

V

OL

Low Level Output

Voltage

2.0

I

O

=20 µA

0.0 0.1 0.1 0.1

V

4.5

I

O

=20 µA

0.0 0.1 0.1 0.1

6.0

I

O

=20 µA

0.0 0.1 0.1 0.1

4.5

I

O

=6.0 mA

0.17 0.26 0.33 0.40

6.0

I

O

=7.8 mA

0.18 0.26 0.33 0.40

I

I

Input Leakage

Current

6.0

V

I

= V

CC

or GND

± 0.1 ± 1 ± 1 µA

I

OZ

High Impedance

Output Leakage

Current

6.0

V

I

= V

IH

or V

IL

V

O

= V

CC

or GND

± 0.5 ± 5 ± 10 µA

I

CC

Quiescent Supply

Current

6.0

V

I

= V

CC

or GND

44080µA