The M74HC165 is a high speed CMOS 8-bit
PISO (parallel-in-serial-out) shift register
fabricated with silicon gate C
This device contains eight clocked master slave
RS flip-flops connected as a shift register, with
auxiliary gating to provide overriding
asynchronous parallel entry. The parallel data
enter when the shift/load
change while shift/load
recommended set-up and hold times are
observed. For clocked operation, shift/load
be high. The two clock inputs perform identically:
one can be used as a clock inhibit by applying a
high signal, to allow this operation clocking is
accomplished through a 2-input nor gate . To avoid
double clocking, however, the inhibit signal should
only go high while the clock is high. Otherwise the
rising inhibit signal causes the same response as
rising clock edge. All inputs are equipped with
protection circuits against static discharge and
transient excess voltage.
Note:a........h : the level of steady input voltage at inputs a through respectively QAn - QGn : the
level of QA - QG, respectively. Before the most recent transition of the clock.
3.2 Logic diagram
Figure 4.Logic diagram
Note:This logic diagram has not to be use d to estimate propagation delays
5/21
Logic statesM74HC165
3.3 Timing chart
Figure 5.Timing chart
6/21
M74HC165Maximum rating
4 Maximum rating
Stressing the device above the rating listed in the “absolute maximum ratings” table may
cause permanent damage to the device. these are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. exposure to absolute maximum rating conditions for
extended periods may aff ect device reliability. refer also to the STMicroelectronics sure
program and other relevant quality documents.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
V
I
ICC or
I
GND
P
T
1. (*) 500mW at 65 ° C; derate to 300 mW by 10 mW/° C from 65°C to 85° C
Supply voltage-0.5 to +7V
CC
V
DC input voltage-0.5 to VCC + 0.5V
I
DC output voltage-0.5 to VCC + 0.5V
O
I
DC input diode current± 20mA
IK
DC output diode current± 20mA
OK
I
DC output current± 25mA
O
DC VCC or ground current± 50mA
Power dissipation500
D
Storage temperature-65 to +150°C
stg
T
Lead temperature (10 sec)300°C
L
(1)
mW
4.1 Recommended operating conditions
Table 5.Recommended operating conditions
SymsbolParameterValueUnit
V
V
V
T
t
r
Supply voltage2 to 6V
CC
Input voltage0 to V
I
Output voltage0 to V
O
Operating temperature-55 to 125°C
op
, t
Input rise and fall time
f
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CC
CC
V
= 2.0 V0 to 1000ns
CC
= 4.5 V0 to 500ns
V
CC
V
= 6.0 V0 to 400ns
CC
V
V
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