ST M74HC14 User Manual

Features

■ High speed:

t

=12 ns (typ.) at VCC = 6 V

PD

■ Low power dissipation:

I

= 1 μA (max.) at TA=25°C

CC

■ High noise immunity:

V

= 1.2 V (typ.) at VCC = 6 V

H

■ Symmetrical output impedance:

|I

| = IOL = 4 mA (min.)

OH

■ Balanced propagation delays:

t

≅ t

PLH

■ Wide operating voltage range:

V

(opr) = 2 to 6 V

CC

■ Pin and function compatible with 74 series 14

PHL

M74HC14

Hex Schmitt inverter

SO-14

DIP-14

TSSOP14

Table 1. Device summary

Order code Package Packaging

M74HC14B1R DIP-14 Tube

M74HC14RM13TR SO-14 Tape and reel

M74HC14TTR TSSOP14 Tape and reel

Description

The M74HC14 is a high speed CMOS hex Schmitt inverter fabricated with silicon gate

2

C

MOS technology. Pin configuration and functions are the same as those of the M74HC04 but all the inputs have 20% V

This, together with its Schmitt trigger function, allows the device to be used on line receiv ers with slow rise/fall input signals.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

hysteresis level.

CC

May 2008 Rev 2 1/14

www.st.com

14

Pin connection and IEC logic symbols M74HC14

1 Pin connection and IEC logic symbols

Figure 1. Pin connections and IEC logic symbols

14

1A

1

V

CC

1Y 2A

2Y

3A

GND

3Y

2

3

4

5

6

7

13

6A

6Y

12

11

5A 5Y

10

9

4A

4Y

8

Table 2. Pin description

Pin number Symbol Name and function

1, 3, 5, 9, 11, 13 1A to 6A Data inputs 2, 4, 6, 8, 10, 12 1Y to 6Y Data outputs

7 GND Ground (0 V)

14 V

CC

Positive supply voltage

Figure 2. Input and output equivalent circuit

V

CC

Input

GND

Table 3. Truth table

AY

LH

HL

2/14

GND

V

CC

Output

M74HC14 Maximum rating

2 Maximum rating

Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may aff ect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

Table 4. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

CC

I

GND

P

T

1. 500mW at 65 ° C; derate to 300 mW by 10 mW/ ° C from 65 ° C to 85 ° C

Supply voltage -0.5 to +7 V

CC

DC input voltage -0.5 to VCC + 0.5 V

V

I

DC output voltage -0.5 to VCC + 0.5 V

O

I

DC input diode current ± 20 mA

IK

DC output diode current ± 20 mA

OK

I

DC output current ± 25 mA

O

or

DC VCC or Ground current ± 50 mA

Power dissipation 500

D

Storage temperature -65 to +150 °C

stg

Lead temperature (10 sec) 300 °C

T

L

2.1 Recommended operating conditions

Table 5. Recommended operating conditions

Symbol Parameter Value Unit

V

T

Supply voltage 2 to 6 V

CC

Input voltage 0 to V

V

I

Output voltage 0 to V

O

Operating temperature -55 to 125 °C

op

(1)

CC CC

mW

V V

3/14

Electrical characteristics M74HC14

3 Electrical characteristics

Table 6. DC specifications

Test condition Value

Symbol Parameter

High level input

V

t+

voltage

Low level input

V

t-

voltage

Hysteresis

V

H

voltage

OH

OL

I

CC

High level output voltage

Low level output voltage

Input leakage current

Quiescent supply current

V

= 25°C

T

V

CC

A

-40 to 85°C

-55 to 125°C

(V)

Min Typ Max Min Max Min Max

2.0 1.0 1.28 1.5 1.0 1.5 1.0 1.5

6.0 3.0 3.7 4.2 3.0 4.2 3.0 4.2

2.0 0.3 0.74 0.9 0.3 0.9 0.3 0.9

6.0 1.5 2.4 2.6 1.5 2.6 1.5 2.6

2.0 0.3 0.54 1.0 0.3 1.0 0.3 1.0

6.0 0.8 1.3 1.4 0.8 1.7 0.8 1.7

2.0 I

4.5 I

6.0 I

4.5 I

6.0 I

2.0 I

4.5 I

6.0 I

4.5 I

6.0 I

6.0

= -20 μA 1.9 2.0 1.9 1.9

O

= -20 μA 4.4 4.5 4.4 4.4

O

= -20 μA 5.9 6.0 5.9 5.9

O

= -4.0 mA 4.18 4.31 4.13 4.10

O

= -5.2 mA 5.68 5.8 5.63 5.60

O

= -20 μA 0.0 0.1 0.1 0.1

O

= -20 μA 0.0 0.1 0.1 0.1

O

= -20 μA 0.0 0.1 0.1 0.1

O

= -4.0 mA 0.17 0.26 0.33 0.40

O

= -5.2 mA 0.18 0.26 0.33 0.40

O

VI = VCC or

GND

= VCC or

V

I

GND

± 0.1 ± 1 ± 1 μA

11020μA

Unit

V4.5 2.3 2.8 3.15 2.3 3.15 2.3 3.15

V4.5 1.13 1.8 2.0 1.13 2.0 1.13 2.0

V4.5 0.6 1.0 1.4 0.6 1.4 0.6 1.4

V

4/14

M74HC14 Electrical characteristics

Table 7. AC electric al characteristics (CL = 50 pF, Input tr = tf = 6 ns)

Test condition Value

Symbol Parameter

V

CC

= 25 °C -40 to 85 °C

T

A

(V)

Min Typ Max Min Max Min Max

2.0 30 75 95 110

t

TLH tTHL

Output transition time

6.0 7 13 16 19

2.0 42 125 155 190

t

PLH tPHL

Propagation delay time

6.0 12 21 16 32

Table 8. Capacitive characteristics

Test condition Value

Symbol Parameter

V

CC

(V)

TA = 25°C -40 to 85°C

Min Typ Max Min Max Min Max

-55 to

125 °C

-55 to

125°C

Unit

ns4.5 8 15 19 22

ns4.5 14 25 31 38

Unit

C

1. CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to test circuit). Average operating current can be obtained by the following equation: I

Input capacitance 5.0 5 10 10 10 pF

IN

Power dissipation

PD

capacitance

= CPD x VCC x fIN + ICC/6(per gate).

CC(opr)

(1)

5.0 fIN = 10 MHz 28 pF

5/14