M74HC133
13 INPUT NAND GATE
■ HIGH SPEED :
t
= 14 ns (TYP.) at VCC = 6V
PD
■ LOW POWER DISSIPATION:
I
=1µA(MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 4mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ WIDE OPERATING VOLTAGE RANGE:
V
(OPR) = 2V to 6V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
= 28 % VCC (MIN.)
NIL
PHL
74 SERIES 133
DESCRIPTION
The M74HC133 is an high speed CMOS
13-INPUT NAND GATE fabricated with silicon
gate C
2
MOS technology.
The internal circuit is composed of 7 stages
including buffer output , which enables high noise
immunity and stable output.
TSSOPDIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC133B1R
SOP M74HC133M1R M74HC133RM13TR
TSSOP M74HC133TTR
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/9July 2001
M74HC133
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1 to 7,
10 to 15
9 Y Data Output
8 GND Ground (0V)
16 Vcc Positive Supply Voltage
TRUTH TABLE
ABCDEFGHI JKLMY
LXXXXXXXXXXXXH
XLXXXXXXXXXXXH
XXLXXXXXXXXXXH
XXXLXXXXXXXXXH
XXXXLXXXXXXXXH
XXXXXLXXXXXXXH
XXXXXXLXXXXXXH
XXXXXXXLXXXXXH
XXXXXXXXLXXXXH
XXXXXXXXXLXXXH
XXXXXXXXXXLXXH
XXXXXXXXXXXLXH
XXXXXXXXXXXXLH
HHHHHHHHHHHHHL
X : Don’t Care
A to G,
H to M
Data Inputs
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
2/9
Supply Voltage
CC
DC Input Voltage -0.5 to VCC + 0.5
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Power Dissipation
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
; derate to 30 0m W by 10mW/°C from 65
°C
°C to 85°C
-0.5 to +7 V
V
V
± 20 mA
± 20 mA
± 25 mA
± 50 mA
500(*) mW
-65 to +150 °C
300 °C
M74HC133
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
t
r
DC SPECIFICATIONS
Symbol Parameter
V
IH
V
IL
V
OH
V
OL
I
I
I
CC
Supply Voltage
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time VCC = 2.0V
, t
f
V
V
CC
CC
= 4.5V
= 6.0V
Test Condition Value
T
= 25°C
A
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
V
CC
(V)
2.0 1.5 1.5 1.5
Voltage
6.0 4.2 4.2 4.2
Low Level Input
2.0 0.5 0.5 0.5
Voltage
6.0 1.8 1.8 1.8
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
IO=-20 µA
I
=-20 µA
O
I
=-20 µA
O
I
=-4.0 mA
O
I
=-5.2 mA
O
IO=20 µA
I
=20 µA
O
I
=20 µA
O
I
=4.0 mA
O
I
=5.2 mA
O
= VCC or GND
V
I
= VCC or GND
V
I
1.9 2.0 1.9 1.9
4.4 4.5 4.4 4.4
5.9 6.0 5.9 5.9
4.18 4.31 4.13 4.10
5.68 5.8 5.63 5.60
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.17 0.26 0.33 0.40
0.18 0.26 0.33 0.40
± 0.1 ± 1 ± 1 µA
11020µA
2 to 6 V
CC
CC
-55 to 125 °C
0 to 1000 ns
0 to 500 ns
0 to 400 ns
-40 to 85°C -55 to 125°C
V
V
Unit
V4.5 3.15 3.15 3.15
V4.5 1.35 1.35 1.35
V
V
3/9