ST M74HC125 User Manual

M74HC125

QUAD BUS BUFFER (3-STATE)

■HIGH SPEED:

tPD = 8ns (TYP.) at VCC = 6V

■LOW POWER DISSIPATION: ICC = 4μA(MAX.) at TA=25°C

■HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)

■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 6mA (MIN)

■BALANCED PROPAGATION DELAYS: tPLH tPHL

■WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V

■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 125

		DIP		SOP	TSSOP
ORDER CODES
PACKAGE				TUBE	T & R
DIP				M74HC125B1R
SOP				M74HC125M1R	M74HC125RM13TR
TSSOP					M74HC125TTR

DESCRIPTION

The M74HC125 is an high speed CMOS QUAD BUFFER (3-STATE) fabricated with silicon gate C2MOS technology.

The device requires the 3-STATE control input G to be set high to place the output into the high impedance state.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

August 2001

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M74HC125

INPUT AND OUTPUT EQUIVALENT CIRCUIT	PIN DESCRIPTION
	PIN No	SYMBOL		NAME AND FUNCTION
	1, 4, 10, 13	1G	TO 4G	Output Enable Input
	2, 5, 9, 12	1A	TO 4A	Data Inputs
	3, 6, 8, 11	1Y	TO 4Y	Data Outputs
	7	GND		Ground (0V)
	14		VCC	Positive Supply Voltage

TRUTH TABLE

A		G		Y
X		H		Z
L		L		L
H		L		H

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7	V
VI	DC Input Voltage	-0.5 to VCC + 0.5	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	± 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Current	± 35	mA
ICC or IGND	DC VCC or Ground Current	± 70	mA
PD	Power Dissipation	500(*)	mW
Tstg	Storage Temperature	-65 to +150	°C
TL	Lead Temperature (10 sec)	300	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C

RECOMMENDED OPERATING CONDITIONS

Symbol		Parameter		Value	Unit
VCC	Supply Voltage			2 to 6	V
VI	Input Voltage			0 to VCC	V
VO	Output Voltage			0 to VCC	V
Top	Operating Temperature			-55 to 125	°C
	Input Rise and Fall Time		VCC = 2.0V	0 to 1000	ns
tr, tf			VCC = 4.5V	0 to 500	ns
			VCC = 6.0V	0 to 400	ns

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DC SPECIFICATIONS

			Test Condition						Value
Symbol	Parameter	VCC				TA = 25°C			-40 to 85°C		-55 to 125°C		Unit
		(V)			Min.		Typ.	Max.	Min.	Max.	Min.	Max.
VIH	High Level Input	2.0			1.5				1.5		1.5
	Voltage	4.5			3.15				3.15		3.15		V
		6.0			4.2				4.2		4.2
VIL	Low Level Input	2.0						0.5		0.5		0.5
	Voltage	4.5						1.35		1.35		1.35	V
		6.0						1.8		1.8		1.8
VOH	High Level Output	2.0		IO=-20 μA	1.9		2.0		1.9		1.9
	Voltage
		4.5		IO=-20 μA	4.4		4.5		4.4		4.4
		6.0		IO=-20 μA	5.9		6.0		5.9		5.9		V
		4.5		IO=-6.0 mA	4.18		4.31		4.13		4.10
		6.0		IO=-7.8 mA	5.68		5.8		5.63		5.60
VOL	Low Level Output	2.0		IO=20 μA			0.0	0.1		0.1		0.1
	Voltage
		4.5		IO=20 μA			0.0	0.1		0.1		0.1
		6.0		IO=20 μA			0.0	0.1		0.1		0.1	V
		4.5		IO=6.0 mA			0.17	0.26		0.33		0.40
		6.0		IO=7.8 mA			0.18	0.26		0.33		0.40
II	Input Leakage	6.0		VI = VCC or GND				± 0.1		± 1		± 1	μA
	Current
IOZ	High Impedance			VI = VIH or VIL				± 0.5		± 5		± 10	μA
	Output Leakage	6.0		VO = VCC or GND
	Current
ICC	Quiescent Supply	6.0		VI = VCC or GND				4		40		80	μA
	Current

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