ST M74HC03 User Manual
M74HC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
■HIGH SPEED:
tPD = 8ns (TYP.) at VCC = 6V
■LOW POWER DISSIPATION: ICC = 1μA(MAX.) at TA=25°C
■HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)
■BALANCED PROPAGATION DELAYS: tPLH tPHL
■WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V
■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 03
DESCRIPTION
The M74HC03 is an high speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can be also used as a
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DIP |
SOP |
TSSOP |
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ORDER CODES |
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PACKAGE |
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TUBE |
T & R |
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DIP |
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M74HC03B1R |
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SOP |
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M74HC03M1R |
M74HC03RM13TR |
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TSSOP |
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M74HC03TTR |
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led driver and in any other application requiring a current sink.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001 |
1/8 |
M74HC03
INPUT AND OUTPUT EQUIVALENT CIRCUIT |
PIN DESCRIPTION |
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PIN No |
SYMBOL |
NAME AND FUNCTION |
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1, 4, 9, 12 |
1A to 4A |
Data Inputs |
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2, 5, 10, 13 |
1B to 4B |
Data Inputs |
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3, 6, 8, 11 |
1Y to 4Y |
Data Outputs |
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7 |
GND |
Ground (0V) |
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14 |
VCC |
Positive Supply Voltage |
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TRUTH TABLE |
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A |
B |
Y |
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L |
L |
Z |
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H |
Z |
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H |
L |
Z |
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H |
H |
L |
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Z : High Impedance |
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ABSOLUTE MAXIMUM RATINGS |
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5 to +7 |
V |
VI |
DC Input Voltage |
-0.5 to VCC + 0.5 |
V |
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
± 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
+ 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
PD |
Power Dissipation |
500(*) |
mW |
Tstg |
Storage Temperature |
-65 to +150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
Symbol |
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Parameter |
Value |
Unit |
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VCC |
Supply Voltage |
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2 to 6 |
V |
VI |
Input Voltage |
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0 to VCC |
V |
VO |
Output Voltage |
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0 to VCC |
V |
Top |
Operating Temperature |
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-55 to 125 |
°C |
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Input Rise and Fall Time |
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VCC = 2.0V |
0 to 1000 |
ns |
tr, tf |
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VCC = 4.5V |
0 to 500 |
ns |
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VCC = 6.0V |
0 to 400 |
ns |
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M74HC03
DC SPECIFICATIONS
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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VIH |
High Level Input |
2.0 |
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1.5 |
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1.5 |
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1.5 |
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Voltage |
4.5 |
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3.15 |
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3.15 |
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3.15 |
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V |
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6.0 |
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4.2 |
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4.2 |
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4.2 |
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VIL |
Low Level Input |
2.0 |
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0.5 |
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0.5 |
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0.5 |
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Voltage |
4.5 |
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1.35 |
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1.35 |
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1.35 |
V |
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6.0 |
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1.8 |
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1.8 |
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1.8 |
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VOL |
Low Level Output |
2.0 |
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IO=20 μA |
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0.0 |
0.1 |
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0.1 |
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0.1 |
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Voltage |
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4.5 |
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IO=20 μA |
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0.0 |
0.1 |
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0.1 |
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0.1 |
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6.0 |
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IO=20 μA |
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0.0 |
0.1 |
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0.1 |
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0.1 |
V |
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4.5 |
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IO=4.0 mA |
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0.17 |
0.26 |
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0.33 |
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0.40 |
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6.0 |
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IO=5.2 mA |
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0.18 |
0.26 |
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0.33 |
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0.40 |
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II |
Input Leakage |
6.0 |
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VI = VCC or GND |
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± 0.1 |
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± 1 |
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± 1 |
μA |
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Current |
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IOZ |
Output Leakage |
6.0 |
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VI = VIH or VIL |
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±0.5 |
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± 5 |
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± 10 |
μA |
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Current |
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VO = VCC or GND |
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ICC |
Quiescent Supply |
6.0 |
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VI = VCC or GND |
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1 |
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10 |
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20 |
μA |
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Current |
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AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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tTHL |
Output Transition |
2.0 |
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30 |
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75 |
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95 |
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110 |
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Time |
4.5 |
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8 |
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15 |
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19 |
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22 |
ns |
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6.0 |
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7 |
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13 |
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16 |
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19 |
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tPLZ |
Propagation Delay |
2.0 |
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16 |
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60 |
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75 |
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90 |
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Time |
4.5 |
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RL = 1 KΩ |
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9 |
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12 |
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15 |
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18 |
ns |
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6.0 |
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8 |
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10 |
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13 |
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15 |
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tPZL |
Propagation Delay |
2.0 |
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RL = 1 KΩ |
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23 |
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60 |
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75 |
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90 |
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Time |
4.5 |
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7 |
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12 |
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15 |
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18 |
ns |
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6.0 |
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6 |
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10 |
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13 |
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15 |
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CAPACITIVE CHARACTERISTICS |
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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CIN |
Input Capacitance |
5.0 |
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5 |
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10 |
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10 |
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10 |
pF |
CPD |
Power Dissipation |
5.0 |
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7 |
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pF |
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Capacitance (note |
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1) |
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1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
3/8
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