M74HC02
QUAD 2-INPUT NOR GATE
■HIGH SPEED:
tPD = 8ns (TYP.) at VCC = 6V
■LOW POWER DISSIPATION: ICC = 1μA(MAX.) at TA=25°C
■HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)
■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)
■BALANCED PROPAGATION DELAYS: tPLH tPHL
■WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V
■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 02
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DIP |
SOP |
TSSOP |
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ORDER CODES |
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PACKAGE |
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TUBE |
T & R |
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DIP |
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M74HC02B1R |
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SOP |
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M74HC02M1R |
M74HC02RM13TR |
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TSSOP |
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M74HC02TTR |
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DESCRIPTION
The M74HC02 is an high speed CMOS QUAD 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001 |
1/8 |
M74HC02
INPUT AND OUTPUT EQUIVALENT CIRCUIT |
PIN DESCRIPTION |
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PIN No |
SYMBOL |
NAME AND FUNCTION |
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2, 5, 8, 11 |
1A to 4A |
Data Inputs |
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3, 6, 9, 12 |
1B to 4B |
Data Inputs |
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1, 4, 10, 13 |
1Y to 4Y |
Data Outputs |
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7 |
GND |
Ground (0V) |
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14 |
VCC |
Positive Supply Voltage |
TRUTH TABLE
A |
B |
Y |
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L |
L |
H |
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L |
H |
L |
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H |
L |
L |
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H |
H |
L |
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ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
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VCC |
Supply Voltage |
-0.5 to +7 |
V |
VI |
DC Input Voltage |
-0.5 to VCC + 0.5 |
V |
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
± 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
PD |
Power Dissipation |
500(*) |
mW |
Tstg |
Storage Temperature |
-65 to +150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
Symbol |
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Parameter |
Value |
Unit |
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VCC |
Supply Voltage |
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2 to 6 |
V |
VI |
Input Voltage |
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0 to VCC |
V |
VO |
Output Voltage |
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0 to VCC |
V |
Top |
Operating Temperature |
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-55 to 125 |
°C |
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Input Rise and Fall Time |
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VCC = 2.0V |
0 to 1000 |
ns |
tr, tf |
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VCC = 4.5V |
0 to 500 |
ns |
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VCC = 6.0V |
0 to 400 |
ns |
2/8
M74HC02
DC SPECIFICATIONS
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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VIH |
High Level Input |
2.0 |
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1.5 |
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1.5 |
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1.5 |
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Voltage |
4.5 |
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3.15 |
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3.15 |
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3.15 |
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V |
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6.0 |
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4.2 |
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4.2 |
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4.2 |
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VIL |
Low Level Input |
2.0 |
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0.5 |
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0.5 |
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0.5 |
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Voltage |
4.5 |
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1.35 |
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1.35 |
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1.35 |
V |
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6.0 |
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1.8 |
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1.8 |
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1.8 |
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VOH |
High Level Output |
2.0 |
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IO=-20 μA |
1.9 |
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2.0 |
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1.9 |
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1.9 |
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Voltage |
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4.5 |
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IO=-20 μA |
4.4 |
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4.5 |
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4.4 |
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4.4 |
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6.0 |
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IO=-20 μA |
5.9 |
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6.0 |
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5.9 |
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5.9 |
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V |
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4.5 |
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IO=-4.0 mA |
4.18 |
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4.31 |
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4.13 |
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4.10 |
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6.0 |
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IO=-5.2 mA |
5.68 |
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5.8 |
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5.63 |
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5.60 |
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VOL |
Low Level Output |
2.0 |
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IO=20 μA |
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0.0 |
0.1 |
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0.1 |
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0.1 |
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Voltage |
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4.5 |
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IO=20 μA |
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0.0 |
0.1 |
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0.1 |
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0.1 |
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6.0 |
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IO=20 μA |
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0.0 |
0.1 |
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0.1 |
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0.1 |
V |
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4.5 |
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IO=4.0 mA |
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0.17 |
0.26 |
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0.33 |
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0.40 |
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6.0 |
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IO=5.2 mA |
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0.18 |
0.26 |
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0.33 |
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0.40 |
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II |
Input Leakage |
6.0 |
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VI = VCC or GND |
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± 0.1 |
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± 1 |
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± 1 |
μA |
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Current |
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ICC |
Quiescent Supply |
6.0 |
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VI = VCC or GND |
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1 |
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10 |
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20 |
μA |
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Current |
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AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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tTLH tTHL |
Output Transition |
2.0 |
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30 |
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75 |
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95 |
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110 |
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Time |
4.5 |
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8 |
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15 |
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19 |
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22 |
ns |
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6.0 |
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7 |
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13 |
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16 |
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19 |
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tPLH tPHL |
Propagation Delay |
2.0 |
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27 |
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75 |
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95 |
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110 |
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Time |
4.5 |
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9 |
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15 |
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19 |
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22 |
ns |
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6.0 |
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8 |
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13 |
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16 |
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19 |
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CAPACITIVE CHARACTERISTICS
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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CIN |
Input Capacitance |
5.0 |
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5 |
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10 |
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10 |
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10 |
pF |
CPD |
Power Dissipation |
5.0 |
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21 |
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pF |
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Capacitance (note |
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1) |
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1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
3/8