ST M74HC02 User Manual

ST M74HC02 User Manual

M74HC02

QUAD 2-INPUT NOR GATE

HIGH SPEED:

tPD = 8ns (TYP.) at VCC = 6V

LOW POWER DISSIPATION: ICC = 1μA(MAX.) at TA=25°C

HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)

SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)

BALANCED PROPAGATION DELAYS: tPLH tPHL

WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V

PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 02

 

 

DIP

SOP

TSSOP

 

 

 

 

 

 

ORDER CODES

 

PACKAGE

 

TUBE

T & R

 

 

 

 

 

 

DIP

 

M74HC02B1R

 

 

 

 

 

 

 

SOP

 

M74HC02M1R

M74HC02RM13TR

 

 

 

 

 

 

TSSOP

 

 

M74HC02TTR

 

 

 

 

 

 

DESCRIPTION

The M74HC02 is an high speed CMOS QUAD 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

July 2001

1/8

M74HC02

INPUT AND OUTPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

 

 

PIN No

SYMBOL

NAME AND FUNCTION

 

2, 5, 8, 11

1A to 4A

Data Inputs

 

3, 6, 9, 12

1B to 4B

Data Inputs

 

1, 4, 10, 13

1Y to 4Y

Data Outputs

 

7

GND

Ground (0V)

 

14

VCC

Positive Supply Voltage

TRUTH TABLE

A

B

Y

 

 

 

L

L

H

 

 

 

L

H

L

 

 

 

H

L

L

 

 

 

H

H

L

 

 

 

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

 

 

 

 

VCC

Supply Voltage

-0.5 to +7

V

VI

DC Input Voltage

-0.5 to VCC + 0.5

V

VO

DC Output Voltage

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

± 20

mA

IOK

DC Output Diode Current

± 20

mA

IO

DC Output Current

± 25

mA

ICC or IGND

DC VCC or Ground Current

± 50

mA

PD

Power Dissipation

500(*)

mW

Tstg

Storage Temperature

-65 to +150

°C

TL

Lead Temperature (10 sec)

300

°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C

RECOMMENDED OPERATING CONDITIONS

Symbol

 

Parameter

Value

Unit

 

 

 

 

 

 

VCC

Supply Voltage

 

 

2 to 6

V

VI

Input Voltage

 

 

0 to VCC

V

VO

Output Voltage

 

 

0 to VCC

V

Top

Operating Temperature

 

 

-55 to 125

°C

 

Input Rise and Fall Time

 

VCC = 2.0V

0 to 1000

ns

tr, tf

 

 

VCC = 4.5V

0 to 500

ns

 

 

 

VCC = 6.0V

0 to 400

ns

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M74HC02

DC SPECIFICATIONS

 

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

 

 

TA = 25°C

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

High Level Input

2.0

 

 

1.5

 

 

 

1.5

 

1.5

 

 

 

Voltage

4.5

 

 

3.15

 

 

 

3.15

 

3.15

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

4.2

 

 

 

4.2

 

4.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Low Level Input

2.0

 

 

 

 

 

0.5

 

0.5

 

0.5

 

 

Voltage

4.5

 

 

 

 

 

1.35

 

1.35

 

1.35

V

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

 

 

 

1.8

 

1.8

 

1.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOH

High Level Output

2.0

 

IO=-20 μA

1.9

 

2.0

 

1.9

 

1.9

 

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

4.5

 

IO=-20 μA

4.4

 

4.5

 

4.4

 

4.4

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

IO=-20 μA

5.9

 

6.0

 

5.9

 

5.9

 

V

 

 

4.5

 

IO=-4.0 mA

4.18

 

4.31

 

4.13

 

4.10

 

 

 

 

6.0

 

IO=-5.2 mA

5.68

 

5.8

 

5.63

 

5.60

 

 

VOL

Low Level Output

2.0

 

IO=20 μA

 

 

0.0

0.1

 

0.1

 

0.1

 

 

Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

4.5

 

IO=20 μA

 

 

0.0

0.1

 

0.1

 

0.1

 

 

 

 

 

 

 

 

 

 

 

6.0

 

IO=20 μA

 

 

0.0

0.1

 

0.1

 

0.1

V

 

 

4.5

 

IO=4.0 mA

 

 

0.17

0.26

 

0.33

 

0.40

 

 

 

6.0

 

IO=5.2 mA

 

 

0.18

0.26

 

0.33

 

0.40

 

II

Input Leakage

6.0

 

VI = VCC or GND

 

 

 

± 0.1

 

± 1

 

± 1

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

Quiescent Supply

6.0

 

VI = VCC or GND

 

 

 

1

 

10

 

20

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tTLH tTHL

Output Transition

2.0

 

 

30

 

75

 

95

 

110

 

 

Time

4.5

 

 

8

 

15

 

19

 

22

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

7

 

13

 

16

 

19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tPLH tPHL

Propagation Delay

2.0

 

 

27

 

75

 

95

 

110

 

 

Time

4.5

 

 

9

 

15

 

19

 

22

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

8

 

13

 

16

 

19

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CAPACITIVE CHARACTERISTICS

 

 

Test Condition

 

 

 

 

Value

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

VCC

 

TA = 25°C

 

-40 to 85°C

-55 to 125°C

Unit

 

 

(V)

 

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CIN

Input Capacitance

5.0

 

 

5

 

10

 

10

 

10

pF

CPD

Power Dissipation

5.0

 

 

21

 

 

 

 

 

 

pF

 

Capacitance (note

 

 

 

 

 

 

 

 

 

1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)

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