The M50FW080 is an 8 Mbit (1Mbit x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed
using a single low voltage (3.0 to 3.6V) supply. For
fast programming and fast erasing in production
lines an optional 12V power supply can be used to
reduce the programming and the erasing times.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Blocks can be
protected individually to prevent accidental Program or Erase commands from modifying the
memory. Program and Erase commands are written to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Two different bus interfaces are supported by the
memory. The primary interface, the Firmware Hub
(or FWH) Interface, uses Intel’s proprietary FWH
protocol. This has been designed to remove the
need for the ISA bus in current PC Chipsets; the
M50FW080 acts as the PC BIOS on the Low Pin
Count bus for these PC Chipsets.
The secondary interface, the Address/Address
Multiplexed (or A/A Mux) Interface, is designed to
be compatible with current Flash Programmers for
production line programming prior to fitting to a PC
Motherboard.
6/47
M50FW080
Figure 2. Logic Diagram (FWH Interface)
V
V
CC
PP
ID0-ID3
FGPI0-
FGPI4
FWH4
CLK
IC
RP
INIT
4
5
M50FW080
V
SS
4
FWH0FWH3
WP
TBL
AI03979
Table 1. Signal Names (FWH Interface)
FWH0-FWH3Input/Output Communications
FWH4Input Communication Frame
ID0-ID3Identification Inputs
FGPI0-FGPI4General Purpose Inputs
ICInterface Configuration
RP
INIT
CLKClock
TBL
WP
RFU
V
CC
V
PP
V
SS
NCNot Connected Internally
Interface Reset
CPU Reset
Top Block Lock
Write Protect
Reserved for Future Use. Leave
disconnected
Supply Voltage
Optional Supply Voltage for Fast
Erase Operations
Ground
Figure 3. Logic Diagram (A/A Mux Interface)
V
V
CC
PP
A0-A10
RC
IC
W
RP
11
M50FW080
G
V
SS
8
DQ0-DQ7
RB
AI03981
Table 2. Signal Names (A/A Mux Interface)
ICInterface Configuration
A0-A10Address Inputs
DQ0-DQ7Data Inputs/Outputs
G
W
RC
RB
RP
V
CC
V
PP
V
SS
NCNot Connected Internally
Output Enable
Write Enable
Row/Column Address Select
Ready/Busy Output
Interface Reset
Supply Voltage
Optional Supply Voltage for Fast
Program and Fast Erase Operations
Ground
7/47
M50FW080
Figure 4. PLCC Connections
A/A MuxA/A Mux
A7
FGPI1
A6
FGPI0
A5
A4
A3
A2
A1
A0
DQ0
Note: Pins 27 and 28 are not internally connected.
WP
TBL
ID3
ID2
ID1
ID0
FWH0
9
RPA8V
A9
RP
FGPI2
FGPI3
M50FW080
V
FWH1
FWH2
V
DQ1
DQ2
1
17
SS
SS
CC
PP
V
CC
PP
V
V
32
RFU
FWH3
DQ3
DQ4
RC
CLK
RFU
DQ5
A10
FGPI4
25
RFU
DQ6
IC (VIL)
NC
NC
V
SS
V
CC
INIT
FWH4
RFU
RFU
IC (VIH)
NC
NC
V
SS
V
CC
G
W
RB
DQ7
A/A MuxA/A Mux
AI04897
Figure 5. TSOP32 Connections
NC
NC
NC
NC
IC (VIH)
A10
RC
V
CC
V
PP
A/A Mux
RP
A9
A8
A7
A6
A5
A4A3
NC
NC
NC
V
SS
GPI4
CLK
V
CC
V
PP
RP
GPI3
IC
1
8
9
M50FW080
32
25
24
INIT
FWH4/LFRAME
NC
RFU
RFU
RFU
RFU
FWH3/LAD3
V
SS
FWH2/LAD2
FWH1/LAD1
GPI2FWH0/LAD0
GPI1ID0
GPI0
WP
TBL
1617
ID1
ID2
ID3
G
W
NC
DQ7
DQ6
DQ5
DQ4
DQ3
V
SS
DQ2
DQ1
DQ0
A0
A1
A2
A/A Mux
AI09757B
8/47
Figure 6. TSOP40 Connections
M50FW080
NC
IC (VIH)
NC
NC
NC
NC
A10
NC
RC
V
CC
V
PP
A/A Mux
RP
NC
NC
A9
A8
A7
A6
A5
A4A3
NC
IC (VIL)
NC
NCINIT
NCRFU
NC
FGPI4
NC
CLK
V
CC
V
PP
RP
NC
NC
FGPI3
FGPI2FWH0
FGPI1ID0
FGPI0
WP
TBL
1
10
M50FW080
11
2021
40
31
30
V
V
FWH4
RFU
RFU
RFU
RFU
V
V
V
FWH3
FWH2
FWH1
ID1
ID2
ID3
SS
CC
CC
SS
SS
V
SS
V
CC
W
G
RB
DQ7
DQ6
DQ5
DQ4
V
CC
V
SS
V
SS
DQ3
DQ2
DQ1
DQ0
A0
A1
A2
A/A Mux
AI03980
9/47
M50FW080
SIGNAL DESCRIPTIONS
There are two distinct bus interfaces available on
this device. The active interface is selected before
power-up, or during Reset, using the Interface
Configuration Pin, IC.
The signals for each interface are discussed in the
Firmware Hub (FWH) Signal Descriptions section
and the Address/Address Multiplexed (A/A Mux)
Signal Descriptions section, respectively, while
the supply signals are discussed in the Supply Sig-
nal Descriptions section.
Firmware Hub (FWH) Signal Descriptions
For the Firmware Hub (FWH) Interface see Figure
2. and Table 1..
Input/Output Communications (FWH0-FWH3).
All Input and Output Communication with the
memory take place on these pins. Addresses and
Data for Bus Read and Bus Write operations are
encoded on these pins.
Input Communication Frame (FWH4). The Input Communication Frame (FWH4) signals the
start of a bus operation. When Input Communication Frame is Low, V
Clock a new bus operation is initiated. If Input
Communication Frame is Low, V
operation then the operation is aborted. When Input Communication Frame is High, V
rent bus operation is proceeding or the bus is idle.
Identification Inputs (ID0-ID3). The Identification Inputs select the address that the memory responds to. Up to 16 memories can be addressed
on a bus. For an address bit to be ‘0’ the pin can
be left floating or driven Low, V
down resistor is included with a value of R
an address bit to be ‘1’ the pin must be driven
High, V
; there will be a leakage current of I
IH
through each pin when pulled to VIH; see Table
20..
By convention the boot memory must have address ‘0000’ and all additional memories take sequential addresses starting from ‘0001’.
General Purpose Inputs (FGPI0-FGPI4). The
General Purpose Inputs can be used as digital inputs for the CPU to read. The General Purpose Input Register holds the values on these pins. The
pins must have stable data from before the start of
the cycle that reads the General Purpose Input
Register until after the cycle is complete. These
pins must not be left to float, they should be driven
Low, V
or High, VIH.
IL,
Interface Configuration (IC). The Interface Configuration input selects whether the Firmware Hub
(FWH) or the Address/Address Multiplexed (A/A
Mux) Interface is used. The chosen interface must
be selected before power-up or during a Reset
and, thereafter, cannot be changed. The state of
, on the rising edge of the
IL
, during a bus
IL
, the cur-
IH
; an internal pull-
IL
IL
. For
LI2
the Interface Configuration, IC, should not be
changed during operation.
To select the Firmware Hub (FWH) Interface the
Interface Configuration pin should be left to float or
driven Low, V
; to select the Address/Address
IL
Multiplexed (A/A Mux) Interface the pin should be
driven High, V
included with a value of R
current of I
. An internal pull-down resistor is
IH
through each pin when pulled to VIH;
LI2
; there will be a leakage
IL
see Table 20..
Interface Reset (RP
). The Interface Reset (RP)
input is used to reset the memory. When Interface
Reset (RP
) is set Low, VIL, the memory is in Reset
mode: the outputs are put to high impedance and
the current consumption is minimized. When RP
set High, V
, the memory is in normal operation.
IH
is
After exiting Reset mode, the memory enters
Read mode.
CPU Reset (INIT
). The CPU Reset, INIT, pin is
used to Reset the memory when the CPU is reset.
It behaves identically to Interface Reset, RP
, and
the internal Reset line is the logical OR (electrical
AND) of RP
and INIT.
Clock (CLK). The Clock, CLK, input is used to
clock the signals in and out of the Input/Output
Communication Pins, FWH0-FWH3. The Clock
conforms to the PCI specification.
Top Block Lock (TBL
). The Top Block Lock in-
put is used to prevent the Top Block (Block 15)
from being changed. When Top Block Lock, TBL
is set Low, V
, Program and Block Erase opera-
IL
tions in the Top Block have no effect, regardless of
the state of the Lock Register. When Top Block
Lock, TBL
, is set High, VIH, the protection of the
Block is determined by the Lock Register. The
state of Top Block Lock, TBL
, does not affect the
protection of the Main Blocks (Blocks 0 to 14).
Top Block Lock, TBL
, must be set prior to a Program or Block Erase operation is initiated and
must not be changed until the operation completes
or unpredictable results may occur. Care should
be taken to avoid unpredictable behavior by
changing TBL
Write Protect (WP
during Program or Erase Suspend.
). The Write Protect input is
used to prevent the Main Blocks (Blocks 0 to 14)
from being changed. When Write Protect, WP
set Low, V
, Program and Block Erase operations
IL
, is
in the Main Blocks have no effect, regardless of
the state of the Lock Register. When Write Protect,
, is set High, VIH, the protection of the Block
WP
determined by the Lock Register. The state of
Write Protect, WP
, does not affect the protection of
the Top Block (Block 15).
Write Protect, WP
, must be set prior to a Program
or Block Erase operation is initiated and must not
be changed until the operation completes or un-
,
10/47
M50FW080
predictable results may occur. Care should be taken to avoid unpredictable behavior by changing
during Program or Erase Suspend.
WP
Reserved for Future Use (RFU). These pins do
not have assigned functions in this revision of the
part. They must be left disconnected.
Address/Address Multiplexed (A/A Mux)
Signal Descriptions
For the Address/Address Multiplexed (A/A Mux)
Interface see Figure 3. and Table 2..
Address Inputs (A0-A10). The Address Inputs
are used to set the Row Address bits (A0-A10) and
the Column Address bits (A11-A19). They are
latched during any bus operation by the Row/Column Address Select input, RC
.
Data Inputs/Outputs (DQ0-DQ7). The Data Inputs/Outputs hold the data that is written to or read
from the memory. They output the data stored at
the selected address during a Bus Read operation. During Bus Write operations they represent
the commands sent to the Command Interface of
the internal state machine. The Data Inputs/Outputs, DQ0-DQ7, are latched during a Bus Write
operation.
Output Enable (G
). The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W
). The Write Enable, W, controls
the Bus Write operation of the memory’s Command Interface.
Row/Column Address Select (RC
). The Row/
Column Address Select input selects whether the
Address Inputs should be latched into the Row Address bits (A0-A10) or the Column Address bits
(A11-A19). The Row Address bits are latched on
the falling edge of RC
whereas the Column Ad-
dress bits are latched on the rising edge.
Ready/Busy Output (RB
). The Ready/Busy pin
gives the status of the memory’s Program/Erase
Controller. When Ready/Busy is Low, V
OL
, the
memory is busy with a Program or Erase operation
and it will not accept any additional Program or
Erase command except the Program/Erase Suspend command. When Ready/Busy is High, V
OH
the memory is ready for any Read, Program or
Erase operation.
Supply Signal Descriptions
The Supply Signals are the same for both interfaces.
Supply Voltage. The VCC Supply Voltage
V
CC
supplies the power for all operations (Read, Program, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
. This prevents Bus Write operations from ac-
V
LKO
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memory contents being altered will be invalid. After V
CC
becomes valid the Command Interface is reset to
Read mode.
A 0.1µF capacitor should be connected between
the V
Supply Voltage pins and the VSS Ground
CC
pin to decouple the current surges from the power
supply. Both V
Supply Voltage pins must be
CC
connected to the power supply. The PCB track
widths must be sufficient to carry the currents required during program and erase operations.
Optional Supply Voltage. The VPP Optional
V
PP
Supply Voltage pin is used to select the Fast Program (see the Quadruple Byte Program Command
description) and Fast Erase options of the memory
and to protect the memory. When V
PP
< V
PPLK
Program and Erase operations cannot be performed and an error is reported in the Status Register if an attempt to change the memory contents
is made. When V
erations take place as normal. When V
= VCC Program and Erase op-
PP
PP
= V
PPH
Fast Program (if A/A Mux interface is selected)
and Fast Erase operations are used. Any other
voltage input to V
will result in undefined behav-
PP
ior and should not be used.
,
11/47
M50FW080
VPP should not be set to V
for more than 80
PPH
hours during the life of the memory.
BUS OPERATIONS
The two interfaces have similar bus operations but
the signals and timings are completely different.
The Firmware Hub (FWH) Interface is the usual interface and all of the functionality of the part is
available through this interface. Only a subset of
functions are available through the Address/Address Multiplexed (A/A Mux) Interface.
See the sections: The Firmware Hub (FWH) Bus
Operations and Address/Address Multiplexed (A/
A Mux) Bus Operations, for details of the bus op-
erations on each interface.
Firmware Hub (FWH) Bus Operations
The Firmware Hub (FWH) Interface consists of
four data signals (FWH0-FWH3), one control line
(FWH4) and a clock (CLK). In addition protection
against accidental or malicious data corruption
can be achieved using two further signals (TBL
and WP). Finally two reset signals (RP and INIT)
are available to put the memory into a known
state.
The data signals, control signal and clock are designed to be compatible with PCI electrical specifications. The interface operates with clock speeds
up to 33MHz.
The following operations can be performed using
the appropriate bus cycles: Bus Read, Bus Write,
Standby, Reset and Block Protection.
Bus Read. Bus Read operations read from the
memory cells, specific registers in the Command
Interface or Firmware Hub Registers. A valid Bus
Read operation starts when Input Communication
Frame, FWH4, is Low, V
correct Start cycle is on FWH0-FWH3. On the following clock cycles the Host will send the Memory
ID Select, Address and other control bits on
FWH0-FWH3. The memory responds by outputting Sync data until the wait-states have elapsed
followed by Data0-Data3 and Data4-Data7.
See Table 4. and Figure 7., for a description of the
Field definitions for each clock cycle of the transfer. See Table 22. and Figure 12., for details on the
timings of the signals.
Bus Write. Bus Write operations write to the
Command Interface or Firmware Hub Registers. A
valid Bus Write operation starts when Input Communication Frame, FWH4, is Low, V
rises and the correct Start cycle is on FWH0FWH3. On the following Clock cycles the Host will
send the Memory ID Select, Address, other control
bits, Data0-Data3 and Data4-Data7 on FWH0-
, as Clock rises and the
IL
, as Clock
IL
VSS Ground. VSS is the reference for all the volt-
age measurements.
FWH3. The memory outputs Sync data until the
wait-states have elapsed.
See Table 5. and Figure 8., for a description of the
Field definitions for each clock cycle of the transfer. See Table 22. and Figure 12., for details on the
timings of the signals.
Bus Abort. The Bus Abort operation can be used
to immediately abort the current bus operation. A
Bus Abort occurs when FWH4 is driven Low, V
IL
during the bus operation; the memory will tri-state
the Input/Output Communication pins, FWH0FWH3.
Note that, during a Bus Write operation, the Command Interface starts executing the command as
soon as the data is fully received; a Bus Abort during the final TAR cycles is not guaranteed to abort
the command; the bus, however, will be released
immediately.
Standby. When FWH4 is High, V
, the memory
IH
is put into Standby mode where FWH0-FWH3 are
put into a high-impedance state and the Supply
Current is reduced to the Standby level, I
CC1
.
Reset. During Reset mode all internal circuits are
switched off, the memory is deselected and the
outputs are put in high-impedance. The memory is
in Reset mode when Interface Reset, RP
Reset, INIT
Low, V
, is Low, VIL. RP or INIT must be held
, for t
IL
. The memory resets to Read
PLPH
, or CPU
mode upon return from Reset mode and the Lock
Registers return to their default states regardless
of their state before Reset, see Table 14.. If RP
goes Low, VIL, during a Program or Erase op-
INIT
or
eration, the operation is aborted and the memory
cells affected no longer contain valid data; the
memory can take up to t
to abort a Program
PLRH
or Erase operation.
Block Protection. Block Protection can be
forced using the signals Top Block Lock, TBL
Write Protect, WP
, regardless of the state of the
, and
Lock Registers.
Address/Address Multiplexed (A/A Mux) Bus
Operations
The Address/Address Multiplexed (A/A Mux) Interface has a more traditional style interface. The signals consist of a multiplexed address signals (A0A10), data signals, (DQ0-DQ7) and three control
signals (RC
, G, W). An additional signal, RP, can
be used to reset the memory.
The Address/Address Multiplexed (A/A Mux) Inter-
face is included for use by Flash Programming
,
12/47
M50FW080
equipment for faster factory programming. Only a
subset of the features available to the Firmware
Hub (FWH) Interface are available; these include
all the Commands but exclude the Security features and other registers.
The following operations can be performed using
the appropriate bus cycles: Bus Read, Bus Write,
Output Disable and Reset.
When the Address/Address Multiplexed (A/A Mux)
Interface is selected all the blocks are unprotected. It is not possible to protect any blocks through
this interface.
Bus Read. Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature and the Status Register. A valid
Bus Read operation begins by latching the Row
Address and Column Address signals into the
memory using the Address Inputs, A0-A10, and
the Row/Column Address Select RC
Enable (W
High, V
) and Interface Reset (RP) must be
, and Output Enable, G, Low, VIL, in order
IH
. Then Write
to perform a Bus Read operation. The Data Inputs/
Outputs will output the value, see Figure 14. and
Table 24., for details of when the output becomes
valid.
Table 4. FWH Bus Read Field Definitions
Clock
Cycle
Number
11START1101bI
21IDSELXXXXI
Clock
Cycle
Count
Field
FWH0-
FWH3
Memory
I/O
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by latching the Row Address and Column
Address signals into the memory using the Address Inputs, A0-A10, and the Row/Column Address Select RC
Data Inputs/Outputs; Output Enable, G
face Reset, RP
able, W
, must be Low, VIL. The Data Inputs/
. The data should be set up on the
, and Inter-
, must be High, VIH and Write En-
Outputs are latched on the rising edge of Write Enable, W
. See Figure 15. and Table 25., for details
of the timing requirements.
Output Disable. The data outputs are high-im-
pedance when the Output Enable, G
, is at VIH.
Reset. During Reset mode all internal circuits are
switched off, the memory is deselected and the
outputs are put in high-impedance. The memory is
in Reset mode when RP
held Low, V
IL
for t
PLPH
is Low, VIL. RP must be
. If RP is goes Low, VIL, during a Program or Erase operation, the operation is
aborted and the memory cells affected no longer
contain valid data; the memory can take up to t
to abort a Program or Erase operation.
RH
Description
On the rising edge of CLK with FWH4 Low, the contents of
FWH0-FWH3 indicate the start of a FWH Read cycle.
Indicates which FWH Flash Memory is selected. The value
on FWH0-FWH3 is compared to the IDSEL strapping on the
FWH Flash Memory pins to select which FWH Flash
Memory is being addressed.
PL-
3-97ADDRXXXXI
101MSIZE0000bIAlways 0000b (only single byte transfers are supported).
111TAR1111bI
121TAR
13-142WSYNC0101bO
151RSYNC0000bO
16-172DATAXXXXO
1111b
(float)
A 28-bit address phase is transferred starting with the most
significant nibble first.
The host drives FWH0-FWH3 to 1111b to indicate a
turnaround cycle.
The FWH Flash Memory takes control of FWH0-FWH3
O
during this cycle.
The FWH Flash Memory drives FWH0-FWH3 to 0101b
(short wait-sync) for two clock cycles, indicating that the data
is not yet available. Two wait-states are always included.
The FWH Flash Memory drives FWH0-FWH3 to 0000b,
indicating that data will be available during the next clock
cycle.
Data transfer is two CLK cycles, starting with the least
significant nibble.
13/47
M50FW080
Clock
Cycle
Number
181TAR1111bO
191TAR
Clock
Cycle
Count
Field
FWH0-
FWH3
1111b
(float)
Memory
I/O
N/A
Description
The FWH Flash Memory drives FWH0-FWH3 to 1111b to
indicate a turnaround cycle.
The FWH Flash Memory floats its outputs, the host takes
control of FWH0-FWH3.
On the rising edge of CLK with FWH4 Low, the contents of
FWH0-FWH3 indicate the start of a FWH Write Cycle.
Indicates which FWH Flash Memory is selected. The value
on FWH0-FWH3 is compared to the IDSEL strapping on the
FWH Flash Memory pins to select which FWH Flash
Memory is being addressed.
A 28-bit address phase is transferred starting with the most
significant nibble first.
AI03437
11-122DATAXXXXI
131TAR1111bI
141TAR
1111b
(float)
151SYNC0000bO
161TAR1111bO
171TAR
1111b
(float)
14/47
O
N/A
Data transfer is two cycles, starting with the least significant
nibble.
The host drives FWH0-FWH3 to 1111b to indicate a
turnaround cycle.
The FWH Flash Memory takes control of FWH0-FWH3
during this cycle.
The FWH Flash Memory drives FWH0-FWH3 to 0000b,
indicating it has received data or a command.
The FWH Flash Memory drives FWH0-FWH3 to 1111b,
indicating a turnaround cycle.
The FWH Flash Memory floats its outputs and the host takes
control of FWH0-FWH3.
Figure 8. FWH Bus Write Waveforms
CLK
FWH4
M50FW080
FWH0-FWH3
Number of
clock cycles
STARTIDSELADDRMSIZEDATATARSYNCTAR
11712212
Table 6. A/A Mux Bus Operations
OperationGWRP
Bus Read
Bus Write
Output Disable
Reset
V
IL
V
IH
V
IH
V
or V
IL
IH
V
IH
V
IL
V
IH
VIL or V
Table 7. Manufacturer and Device Codes
OperationG
Manufacturer Code
Device Code
V
IL
V
IL
WRPA19-A1A0DQ7-DQ0
V
IH
V
IH
AI03441
V
PP
V
IH
V
IH
V
IH
IH
V
IL
V
IH
V
IH
Don’t CareData Output
VCC or V
PPH
Don’t CareHi-Z
Don’t CareHi-Z
V
IL
V
IL
V
IL
V
IH
DQ7-DQ0
Data Input
20h
2Dh
15/47
M50FW080
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations.
After power-up or a Reset operation the memory
enters Read mode.
The commands are summarized in Table 9., Commands. The following text descriptions should be
read in conjunction with Table 9..
Read Memory Array Command. The Read
Memory Array command returns the memory to its
Read mode where it behaves like a ROM or
EPROM. One Bus Write cycle is required to issue
the Read Memory Array command and return the
memory to Read mode. Once the command is issued the memory remains in Read mode until another command is issued. From Read mode Bus
Read operations will access the memory array.
While the Program/Erase Controller is executing a
Program or Erase operation the memory will not
accept the Read Memory Array command until the
operation completes.
Read Status Register Command. The Read
Status Register command is used to read the Status Register. One Bus Write cycle is required to issue the Read Status Register command. Once the
command is issued subsequent Bus Read operations read the Status Register until another command is issued. See the section on the Status
Register for details on the definitions of the Status
Register bits.
Read Electronic Signature Command. The
Read Electronic Signature command is used to
read the Manufacturer Code and the Device Code.
One Bus Write cycle is required to issue the Read
Electronic Signature command. Once the command is issued subsequent Bus Read operations
read the Manufacturer Code or the Device Code
until another command is issued.
After the Read Electronic Signature Command is
issued the Manufacturer Code and Device Code
can be read using Bus Read operations using the
addresses in Table 8..
Table 8. Read Electronic Signature
CodeAddressData
Manufacturer Code00000h20h
Device Code00001h2Dh
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. Two Bus Write operations are required to issue the command; the second Bus Write cycle latches the address and data
in the internal state machine and starts the Program/Erase Controller. Once the command is issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the address falls in a protected block then the
Program operation will abort, the data in the memory array will not be changed and the Status Register will output the error.
During the Program operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Program
times are given in Table 14..
Note that the Program command cannot change a
bit set at ‘0’ back to ‘1’ and attempting to do so will
not cause any modification on its value. One of the
Erase commands must be used to set all of the
bits in the block to ‘1’.
See Figure 19., for a suggested flowchart on using
the Program command.
Quadruple Byte Program Command. The Quadruple Byte Program Command can be only used
in A/A Mux mode to program four adjacent bytes
in the memory array at a time. The four bytes must
differ only for the addresses A0 and A10. Programming should not be attempted when V
not at V
is below V
V
PP
. The operation can also be executed if
PPH
, but result could be uncertain.
PPH
PP
is
Five Bus Write operations are required to issue the
command. The second, the third and the fourth
Bus Write cycle latches respectively the address
and data of the first, the second and the third byte
in the internal state machine. The fifth Bus Write
cycle latches the address and data of the fourth
byte in the internal state machine and starts the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
During the Quadruple Byte Program operation the
memory will only accept the Read Status register
command and the Program/Erase Suspend command. All other commands will be ignored. Typical
Quadruple Byte Program times are given in Table
8..
Note that the Quadruple Byte Program command
cannot change a bit set to ‘0’ back to ‘1’ and attempting to do so will not cause any modification
on its value. One of the Erase commands must be
used to set all of the bits in the block to ‘1’.
See Figure 20., Quadruple Byte Program Flowchart and Pseudo Code, for a suggested flowchart
on using the Quadruple Byte Program command.
16/47
M50FW080
Chip Erase Command. The Chip Erase Com-
mand can be only used in A/A Mux mode to erase
the entire chip at a time. Erasing should not be attempted when V
is not at V
PP
can also be executed if V
is below V
PP
. The operation
PPH
PPH
, but result could be uncertain. Two Bus Write operations
are required to issue the command and start the
Program/Erase Controller. Once the command is
issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits. During the Chip Erase operation the
memory will only accept the Read Status Register
command. All other commands will be ignored.
Typical Chip Erase times are given in Table 14..
The Chip Erase command sets all of the bits in the
memory to ‘1’. See Figure 22., for a suggested
flowchart on using the Chip Erase command.
Block Erase Command. The Block Erase command can be used to erase a block. Two Bus Write
operations are required to issue the command; the
second Bus Write cycle latches the block address
in the internal state machine and starts the Program/Erase Controller. Once the command is issued subsequent Bus Read operations read the
Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
If the block is protected then the Block Erase operation will abort, the data in the block will not be
changed and the Status Register will output the error.
During the Block Erase operation the memory will
only accept the Read Status Register command
and the Program/Erase Suspend command. All
other commands will be ignored. Typical Block
Erase times are given in Table 14..
The Block Erase command sets all of the bits in
the block to ‘1’. All previous data in the block is
lost.
See Figure 22., for a suggested flowchart on using
the Erase command.
Clear Status Register Command. The Clear
Status Register command can be used to reset
bits 1, 3, 4 and 5 in the Status Register to ‘0’. One
Bus Write is required to issue the Clear Status
Register command. Once the command is issued
the memory returns to its previous mode, subsequent Bus Read operations continue to output the
same data.
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Program
or Erase command is issued. If an error occurs
then it is essential to clear any error bits in the Status Register by issuing the Clear Status Register
command before attempting a new Program or
Erase command.
Program/Erase Suspend Command. The Program/Erase Suspend command can be used to
pause a Program or Block Erase operation. One
Bus Write cycle is required to issue the Program/
Erase Suspend command and pause the Program/Erase Controller. Once the command is issued it is necessary to poll the Program/Erase
Controller Status bit to find out when the Program/
Erase Controller has paused; no other commands
will be accepted until the Program/Erase Controller has paused. After the Program/Erase Controller has paused, the memory will continue to output
the Status Register until another command is issued.
During the polling period between issuing the Program/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the operation to complete. Once Program/Erase Controller Status bit indicates that the Program/Erase
Controller is no longer active, the Program Suspend Status bit or the Erase Suspend Status bit
can be used to determine if the operation has completed or is suspended. For timing on the delay between issuing the Program/Erase Suspend
command and the Program/Erase Controller
pausing see Table 14..
During Program/Erase Suspend the Read Memory Array, Read Status Register, Read Electronic
Signature and Program/Erase Resume commands will be accepted by the Command Interface. Additionally, if the suspended operation was
Block Erase then the Program command will also
be accepted; only the blocks not being erased may
be read or programmed correctly.
See Figure 21., and Figure 24., for suggested
flowcharts on using the Program/Erase Suspend
command.
Program/Erase Resume Command. The Program/Erase Resume command can be used to restart the Program/Erase Controller after a
Program/Erase Suspend has paused it. One Bus
Write cycle is required to issue the Program/Erase
Resume command. Once the command is issued
subsequent Bus Read operations read the Status
Register.
17/47
M50FW080
Table 9. Commands
Bus Write Operations
Command
Cycles
Read Memory Array1XFFh
Read Status Register1X70h
Read Electronic Signature
1X 90h
1X 98h
2X 40hPAPD
Program
2X 10hPAPD
Quadruple Byte Program5X30h
Chip Erase 2X80hX10h
Block Erase2X20hBAD0h
Clear Status Register1X50h
Program/Erase Suspend1XB0h
Program/Erase Resume1XD0h
1X 00h
1X 01h
Invalid/Reserved
1X 60h
1X 2Fh
1XC0h
Note: X Don’t Care, PA Program Address, PD Program Data, A
Read Memory Array. After a Read Memory Array command, read the memory as normal until another command is issued.
Read Status Register. After a Read Status Register command, read the Status Register as normal until another command is issued.
Read Electronic Signature. After a Read Electronic Signature command, read Manufacturer Code, Device Code until another com-
mand is issued.
Block Erase, Program. After these commands read the Status Register until the command completes and another command is issued.
Quadruple Byte Program. This command is only valid in A/A Mux mode. Addresses A
differing only for address bit A0 and A10. After this command read the Status Register until the command completes and another command is issued.
Chip Erase. This command is only valid in A/A Mux mode. After this command read the Status Register until the command completes
and another command is issued.
Clear Status Register. After the Clear Status Register command bits 1, 3, 4 and 5 in the Status Register are reset to ‘0’.
Program/Erase Suspend. After the Program/Erase Suspend command has been accepted, issue Read Memory Array, Read Status
Register, Program (during Erase suspend) and Program/Erase resume commands.
Program/Erase Resume. After the Program/Erase Resume command the suspended Program/Erase operation resumes, read the
Status Register until the Program/Erase Controller completes and the memory returns to Read Mode.
Invalid/Reserved. Do not use Invalid or Reserved commands.
1st2nd3rd4th5th
AddrDataAddrDataAddrDataAddrDataAddrData
A
PD
1
Consecutive Addresses, BA Any address in the Block.
1,2,3,4
A
PD
2
, A2, A3 and A4 must be conse cutive addresses
1
A
PD
3
A
PD
4
18/47
STATUS REGISTER
The Status Register provides information on the
current or previous Program or Erase operation.
Different bits in the Status Register convey different information and errors on the operation.
To read the Status Register the Read Status Register command can be issued. The Status Register
is automatically read after Program, Erase and
Program/Erase Resume commands are issued.
The Status Register can be read from any address.
The Status Register bits are summarized in Table
10.. The following text descriptions should be read
in conjunction with Table 10..
Program/Erase Controller Status (Bit 7). The
Program/Erase Controller Status bit indicates
whether the Program/Erase Controller is active or
inactive. When the Program/Erase Controller Status bit is ‘0’, the Program/Erase Controller is active; when the bit is ‘1’, the Program/Erase
Controller is inactive.
The Program/Erase Controller Status is ‘0’ immediately after a Program/Erase Suspend command
is issued until the Program/Erase Controller pauses. After the Program/Erase Controller pauses the
bit is ‘1’.
During Program and Erase operation the Program/Erase Controller Status bit can be polled to
find the end of the operation. The other bits in the
Status Register should not be tested until the Program/Erase Controller completes the operation
and the bit is ‘1’.
After the Program/Erase Controller completes its
operation the Erase Status, Program Status, V
Status and Block Protection Status bits should be
tested for errors.
Erase Suspend Status (Bit 6). The Erase Suspend Status bit indicates that a Block Erase operation has been suspended and is waiting to be
resumed. The Erase Suspend Status should only
be considered valid when the Program/Erase
Controller Status bit is ‘1’ (Program/Erase Controller inactive); after a Program/Erase Suspend command is issued the memory may still complete the
operation rather than entering the Suspend mode.
When the Erase Suspend Status bit is ‘0’ the Program/Erase Controller is active or has completed
its operation; when the bit is ‘1’ a Program/Erase
Suspend command has been issued and the
memory is waiting for a Program/Erase Resume
command.
When a Program/Erase Resume command is issued the Erase Suspend Status bit returns to ‘0’.
Erase Status (Bit 5). The Erase Status bit can be
used to identify if the memory has applied the
maximum number of erase pulses to the block(s)
PP
M50FW080
and still failed to verify that the block(s) has erased
correctly. The Erase Status bit should be read
once the Program/Erase Controller Status bit is ‘1’
(Program/Erase Controller inactive).
When the Erase Status bit is ‘0’ the memory has
successfully verified that the block(s) has erased
correctly; when the Erase Status bit is ‘1’ the Program/Erase Controller has applied the maximum
number of pulses to the block(s) and still failed to
verify that the block(s) has erased correctly.
Once the Erase Status bit is set to ‘1’ it can only be
reset to ‘0’ by a Clear Status Register command or
a hardware reset. If it is set to ‘1’ it should be reset
before a new Program or Erase command is issued, otherwise the new command will appear to
fail.
Program Status (Bit 4). The Program Status bit
can be used to identify if the memory has applied
the maximum number of program pulses to the
byte and still failed to verify that the byte has programmed correctly. The Program Status bit should
be read once the Program/Erase Controller Status
bit is ‘1’ (Program/Erase Controller inactive).
When the Program Status bit is ‘0’ the memory has
successfully verified that the byte has programmed correctly; when the Program Status bit is
‘1’ the Program/Erase Controller has applied the
maximum number of pulses to the byte and still
failed to verify that the byte has programmed correctly.
Once the Program Status bit is set to ‘1’ it can only
be reset to ‘0’ by a Clear Status Register command or a hardware reset. If it is set to ‘1’ it should
be reset before a new Program or Erase command
is issued, otherwise the new command will appear
to fail.
Status (Bit 3). The VPP Status bit can be
V
PP
used to identify an invalid voltage on the V
during Program and Erase operations. The V
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can occur if V
becomes invalid during a Program or
PP
Erase operation.
When the V
pin was sampled at a valid voltage; when the
V
PP
Status bit is ‘1’ the VPP pin has a voltage that
V
PP
is below the V
Status bit is ‘0’ the voltage on the
PP
Lockout Voltage, V
PP
memory is protected; Program and Erase operation cannot be performed.
Once the V
Status bit set to ‘1’ it can only be re-
PP
set to ‘0’ by a Clear Status Register command or a
hardware reset. If it is set to ‘1’ it should be reset
before a new Program or Erase command is issued, otherwise the new command will appear to
fail.
PPLK
PP
, the
pin
PP
19/47
M50FW080
Program Suspend Status (Bit 2). The Program
Suspend Status bit indicates that a Program operation has been suspended and is waiting to be resumed. The Program Suspend Status should only
be considered valid when the Program/Erase
Controller Status bit is ‘1’ (Program/Erase Controller inactive); after a Program/Erase Suspend command is issued the memory may still complete the
operation rather than entering the Suspend mode.
When the Program Suspend Status bit is ‘0’ the
Program/Erase Controller is active or has completed its operation; when the bit is ‘1’ a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Resume command.
When a Program/Erase Resume command is issued the Program Suspend Status bit returns to
‘0’.
Block Protection Status (Bit 1). The Block Pro-
gram or Block Erase operation has tried to modify
the contents of a protected block. When the Block
Protection Status bit is to ‘0’ no Program or Block
Erase operations have been attempted to protected blocks since the last Clear Status Register
command or hardware reset; when the Block Protection Status bit is ‘1’ a Program or Block Erase
operation has been attempted on a protected
block.
Once it is set to ‘1’ the Block Protection Status bit
can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If it is set to ‘1’ it
should be reset before a new Program or Block
Erase command is issued, otherwise the new
command will appear to fail.
Using the A/A Mux Interface the Block Protection
Status bit is always ‘0’.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value should be masked.
tection Status bit can be used to identify if the Pro-
Table 10. Status Register Bits
OperationBit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1
(1)
Program active‘0’
Program suspended‘1
Program completed successfully‘1’
Program failure due to V
Program failure due to Block Protection (FWH Interface only)‘1’
Program failure due to cell failure ‘1’
Erase active‘0’‘0’‘0’‘0’‘0’‘0’‘0’
Block Erase suspended‘1’‘1’‘0’‘0’‘0’‘0’‘0’
PP
Error
‘1’
X
X
X
X
X
X
‘0’‘0’‘0’‘0’‘0’
(1)
‘0’‘0’‘0’‘1’‘0’
(1)
‘0’‘0’‘0’‘0’‘0’
(1)
‘0’‘0’‘1’‘0’‘0’
(1)
‘0’‘0’‘0’‘0’‘1’
(1)
‘0’‘1’‘0’‘0’‘0’
Erase completed successfully‘1’‘0’‘0’‘0’‘0’‘0’‘0’
Erase failure due to V
Block Erase failure due to Block Protection (FWH Interface
only)
Erase failure due to failed cell(s)‘1’‘0’‘1’‘0’‘0’‘0’‘0’
Note: 1. For Program operations during Erase Suspend Bit 6 is ‘1’, otherwise Bit 6 is ‘0’.
When the Firmware Hub Interface is selected several additional registers can be accessed. These
registers control the protection status of the
Blocks, read the General Purpose Input pins and
identify the memory using the Electronic Signature
codes. See Table 11. for the memory map of the
Configuration Registers.
Lock Registers
The Lock Registers control the protection status of
the Blocks. Each Block has its own Lock Register.
Three bits within each Lock Register control the
protection of each block, the Write Lock Bit, the
Read Lock Bit and the Lock Down Bit.
The Lock Registers can be read and written,
though care should be taken when writing as, once
the Lock Down Bit is set, ‘1’, further modifications
to the Lock Register cannot be made until cleared,
to ‘0’, by a reset or power-up.
See Table 12. for details on the bit definitions of
the Lock Registers.
Write Lock. The Write Lock Bit determines
whether the contents of the Block can be modified
(using the Program or Block Erase Command).
When the Write Lock Bit is set, ‘1’, the block is
write protected; any operations that attempt to
change the data in the block will fail and the Status
Register will report the error. When the Write Lock
Bit is reset, ‘0’, the block is not write protected
through the Lock Register and may be modified
unless write protected through some other means.
When V
tected and cannot be modified, regardless of the
state of the Write Lock Bit. If Top Block Lock, TBL
is Low, V
protected and cannot be modified. Similarly, if
Write Protect, WP
Blocks (Blocks 0 to 14) are write protected and
cannot be modified.
After power-up or reset the Write Lock Bit is always set to ‘1’ (write protected).
Read Lock. The Read Lock bit determines
whether the contents of the Block can be read
(from Read mode). When the Read Lock Bit is set,
‘1’, the block is read protected; any operation that
attempts to read the contents of the block will read
00h instead. When the Read Lock Bit is reset, ‘0’,
read operations in the Block return the data programmed into the block as expected.
After power-up or reset the Read Lock Bit is always reset to ‘0’ (not read protected).
Lock Down. The Lock Down Bit provides a
mechanism for protecting software data from simple hacking and malicious attack. When the Lock
Down Bit is set, ‘1’, further modification to the
Write Lock, Read Lock and Lock Down Bits cannot
be performed. A reset or power-up is required before changes to these bits can be made. When the
Lock Down Bit is reset, ‘0’, the Write Lock, Read
Lock and Lock Down Bits can be changed.
FGPI_REGFirmware Hub (FWH) General Purpose Input RegisterFBC0100hN/AR
MANUF_REGManufacturer Code RegisterFBC0000h20hR
DEV_REGDevice Code RegisterFBC0001h2DhR
Memory
Address
Default
Value
Access
22/47
M50FW080
Firmware Hub (FWH) General Purpose Input
Register
The Firmware Hub (FWH) General Purpose Input
Register holds the state of the Firmware Hub Interface General Purpose Input pins, FGPI0-FGPI4.
When this register is read, the state of these pins
is returned. This register is read-only and writing to
it has no effect.
The signals on the Firmware Hub Interface General Purpose Input pins should remain constant
throughout the whole Bus Read cycle in order to
guarantee that the correct data is read.
Manufacturer Code Register
Reading the Manufacturer Code Register returns
the manufacturer code for the memory. The manufacturer code for STMicroelectronics is 20h. This
register is read-only and writing to it has no effect.
Device Code Register
Reading the Device Code Register returns the device code for the memory, 2Dh. This register is
read-only and writing to it has no effect.
Table 12. Lock Register Bit Definitions
BitBit NameValueFunction
7-3Reserved
‘1’Bus Read operations in this Block always return 00h.
2Read-Lock
1Lock-Down
0Write-Lock
Note: Applies to Top Block Lock Register (T_BLOCK_LK) and Top Block [-1] Lock Register (T_MINUS01_LK) to Top Block [-15] Lock Reg-
ister (T_MINUS15_LK).
Bus read operations in this Block return the Memory Array contents. (Default
‘0’
value).
Changes to the Read-Lock bit and the Write-Lock bit cannot be performed. Once a
‘1’
‘1’ is written to the Lock-Down bit it cannot be cleared to ‘0’; the bit is always reset
to ‘0’ following a Reset (using RP
Read-Lock and Write-Lock can be changed by writing new values to them. (Default
‘0’
value).
Program and Block Erase operations in this Block will set an error in the Status
‘1’
Register. The memory contents will not be changed. (Default value).
Program and Block Erase operations in this Block are executed and will modify the
‘0’
Block contents.
or INIT) or after power-up.
Table 13. General Purpose Input Register Definition
BitBit NameValueFunction
7-5Reserved
Input Pin FGPI4 is at V
4FGPI4
3FGPI3
2FGPI2
1FGPI1
0FGPI0
Note: Applies to the General Purpose Input Register (FGPI_REG).
‘1’
Input Pin FGPI4 is at V
‘0’
Input Pin FGPI3 is at V
‘1’
Input Pin FGPI3 is at V
‘0’
Input Pin FGPI2 is at V
‘1’
Input Pin FGPI2 is at V
‘0’
Input Pin FGPI1 is at V
‘1’
Input Pin FGPI1 is at V
‘0’
Input Pin FGPI0 is at V
‘1’
Input Pin FGPI0 is at V
‘0’
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
23/47
M50FW080
PROGRAM AND ERASE TIMES
The Program and Erase times are shown in Table
14..
Table 14. Program and Erase Times
ParameterInterfaceTest ConditionMin
Byte Program10200
V
Quadruple Byte ProgramA/A Mux
Chip Erase A/A Mux
A/A Mux
Block Program
Block Erase
Program/Erase Suspend to Program pause
Program/Erase Suspend to Block Erase pause
Note: 1. TA = 25°C, VCC = 3.3V
2. This time is obtained executing the Quadruple Byte Program Command.
3. Sampled only, not 100% tested.
(3)
(3)
= 12V ± 5%
PP
= 12V ± 5%
V
PP
= 12V ± 5%
V
PP
V
PP
V
= 12V ± 5%
PP
V
PP
= V
= V
CC
CC
(1)
Typ
MaxUnit
10200
9sec
(2)
0.1
0.45sec
0.758sec
110sec
µs
µs
5sec
5µs
30µs
24/47
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
Table 15. Absolute Maximum Ratings
SymbolParameterMin.Max.Unit
T
STG
T
LEAD
V
IOInput or Output range
Storage Temperature–65150°C
Lead Temperature during Soldering
2
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
See note
–0.50
1
V
+ 0.6
CC
M50FW080
°C
V
V
CC
V
PP
V
ESD
Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. Minimum voltage may undershoot to –2V for less than 20ns during transitions. Maximum voltage may overshoot to V
less than 20ns during transitions.
3. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
Supply Voltage–0.504V
Program Voltage–0.613V
Electrostatic Discharge Voltage (Human Body model)
Ω, R2=500 Ω)
3
–20002000V
+ 2V for
CC
25/47
M50FW080
DC AND AC PARAMETERS
This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Table 16. Operating Conditions
SymbolParameterMin.Max.Unit
Conditions summarized in Table 16., Table 17.
and Table 18.. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the quoted parameters.
V
CC
T
A
Supply Voltage3.03.6V
Ambient Operating Temperature (Device Grade 5)–2085°C
Ambient Operating Temperature (Device Grade 1)070°C
Table 17. FWH Interface AC Measurement Conditions
ParameterValueUnit
Load Capacitance (C
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
)
L
0.2 V
10pF
≤ 1.4ns
and 0.6 V
CC
0.4 V
CC
CC
Table 18. A/A Mux Interface AC Measurement Conditions
ParameterValueUnit
Load Capacitance (C
Input Rise and Fall Times
Input Pulse Voltages0 to 3V
Input and Output Timing Ref. Voltages1.5V
)
L
30pF
≤ 10ns
V
V
26/47
Figure 9. FWH Interface AC Testing Input Output Waveforms
0.6 V
CC
0.2 V
CC
Input and Output AC Testing Waveform
0.4 V
M50FW080
CC
IO < I
LO
Output AC Tri-state Testing Waveform
IO > I
LO
IO < I
LO
AI03404
Figure 10. A/A Mux Interface AC Testing Input Output Waveform
3V
1.5V
0V
AI01417
Table 19. Impedance
SymbolParameterTest ConditionMinMaxUnit
(1)
C
IN
(1)
C
CLK
(2)
L
PIN
Note: 1. Sampled only, not 100% tested.
2. See PCI Specification.
3. T
= 25°C, f = 1MHz.
A
Input Capacitance
Clock Capacitance
Recommended Pin
Inductance
V
V
IN
IN
= 0V
= 0V
13pF
312pF
20nH
27/47
M50FW080
Table 20. DC Characteristics
SymbolParameterInterfaceTest ConditionMinMaxUnit
V
V
Input High Voltage
IH
Input Low Voltage
IL
A/A Mux
FWH–0.5
A/A Mux-0.50.8V
FWH
0.5 V
0.7 V
CCVCC
CCVCC
+ 0.5
+ 0.3
0.3 V
CC
V
V
V
V
V
V
IH
IL
I
V
V
PPLK
V
(INIT)
(INIT)
(2)
LI
I
LI2
R
IL
V
OH
V
OL
I
LO
PP1
PPH
LKO
I
CC1
Input High VoltageFWH1.35
INIT
Input Low VoltageFWH–0.5
INIT
Input Leakage Current
IC, IDx Input Leakage
Current
IC, IDx Input Pull Low
Resistor
Output High Voltage
Output Low Voltage
Output Leakage Current
VPP Voltage
VPP Voltage (Fast
Program/Fast Erase)
(1)
VPP Lockout Voltage
(1)
VCC Lockout Voltage
Supply Current (Standby)FWH
IC, ID0, ID1, ID2, ID3 = V
FWHI
A/A Mux
FWH
A/A Mux
FWH4 = 0.9 V
All other inputs 0.9 VCC to 0.1 V
VCC = 3.6V, f(CLK) = 33MHz
0V
≤ V
≤ V
IN
CC
CC
20100kΩ
= –500µA
OH
I
= –100µA
OH
I
= 1.5mA0.1 V
OL
I
= 1.8mA
OL
0V
≤ V
≤ V
OUT
CC
0.9 V
V
CC
– 0.4
33.6V
11.412.6V
1.5V
1.82.3V
, VPP = V
CC
CC
CC
CC
V
+ 0.5
CC
0.2 V
CC
±10
200
CC
0.45V
±10
100
V
V
µA
µA
V
V
V
µA
µA
, VPP = V
CC
I
CC2
Supply Current (Standby)FWH
FWH4 = 0.1 V
All other inputs 0.9 VCC to 0.1 V
VCC = 3.6V, f(CLK) = 33MHz
= VCC max, VPP = V
I
CC3
(Any internal operation
FWH
active)
Supply Current
I
CC4
I
CC5
I
PP
I
PP1
Note: 1. Sampled only, not 100% tested.
Supply Current (Read)A/A Mux
Supply Current
(1)
(Program/Erase)
A/A MuxProgram/Erase Controller Active20mA
VPP Supply Current
(Read/Standby)
VPP Supply Current
(1)
(Program/Erase active)
2. Input leakage currents include High-Z output leakage for all bi-directional buffers with tri-state outputs.
V
CC
f(CLK) = 33MHz
I
OUT
G
= VIH, f = 6MHz
V
V
V
PP
= 0mA
> V
PP
CC
= V
PP
CC
= 12V ± 5%
CC
28/47
CC
CC
10mA
60mA
20mA
400µA
40mA
15mA
M50FW080
Figure 11. FWH Interface Clock Waveform
tCYC
tHIGHtLOW
0.6 V
CC
0.5 V
CC
0.4 V
CC
0.3 V
CC
0.2 V
CC
Table 21. FWH Interface Clock Characteristics
SymbolParameterTest ConditionValueUnit
t
CYC
t
HIGH
t
LOW
CLK Cycle Time
CLK High TimeMin11ns
CLK Low TimeMin11ns
CLK Slew Ratepeak to peak
Note: 1. Devices on the PCI Bus must work with any clock frequency between DC and 33MHz. Below 16MHz devices may be guaranteed
by design rather than tested. Refer to PCI Specification.
(1)
Min30ns
Min1V/ns
Max4V/ns
0.4 VCC,
(minimum)
p-to-p
AI03403
29/47
M50FW080
Figure 12. FWH Interface AC Signal Timing Waveforms
CLK
tCHQV
FWH0-FWH3
VALID OUTPUT DATAFLOAT OUTPUT DATAVALID INPUT DATA
tCHQZ
tCHQX
tDVCH
tCHDX
VALID
AI03405
Table 22. FWH Interface AC Signal Timing Characteristics
Symbol
t
CHQV
(1)
t
CHQX
t
CHQZ
t
AV CH
t
DVC H
t
CHAX
t
CHDX
Note: 1. The timing measurements for Active/Float transitions are defined when the current through the pin equals the leakage current spec-
ification.
2. Applies to all inputs except CLK.
PCI
Symbol
t
val
t
on
t
off
t
su
t
h
ParameterTest ConditionValueUnit
CLK to Data Out
CLK to Active
(Float to Active Delay)
CLK to Inactive
(Active to Float Delay)
Input Set-up Time
Input Hold Time
(2)
(2)
Min2ns
Max11ns
Min2ns
Max28ns
Min7ns
Min0ns
30/47
Figure 13. Reset AC Waveforms
RP, INIT
tPLPH
M50FW080
tPHWL, tPHGL, tPHFL
W, G, FWH4
RB
tPLRH
AI03420
Table 23. Reset AC Characteristics
SymbolParameterTest ConditionValueUnit
t
PLPH
t
PLRH
t
PHFL
t
PHWL
t
PHGL
Note: 1. See Chapter 4 of the PCI Specification.
RP or INIT Reset Pulse WidthMin100ns
Program/Erase InactiveMax100ns
RP or INIT Low to Reset
Program/Erase ActiveMax30
or INIT Slew Rate
RP
(1)
Rising edge onlyMin50mV/ns
RP or INIT High to FWH4 LowFWH Interface onlyMin30µs
RP High to Write Enable or Output
Enable Low
A/A Mux Interface onlyMin50
µs
µs
31/47
M50FW080
Figure 14. A/A Mux Interface Read AC Waveforms
tAVAV
A0-A10
RC
G
DQ0-DQ7
W
RP
ROW ADDR VALIDNEXT ADDR VALID
tAVCLtAVCH
tCLAXtCHAX
tPHAV
COLUMN ADDR VALID
tCHQV
tGLQV
tGLQX
tGHQZ
tGHQX
VALID
AI03406
Table 24. A/A Mux Interface Read AC Characteristics
SymbolParameterTest ConditionValueUnit
t
AVAV
t
AVCL
t
CLAX
t
AV CH
t
CHAX
t
CHQV
t
GLQV
t
PHAV
t
GLQX
t
GHQZ
t
GHQX
Note: 1. G may be delayed up to t
32/47
Read Cycle TimeMin250ns
Row Address Valid to RC LowMin50ns
RC Low to Row Address TransitionMin50ns
Column Address Valid to RC highMin50ns
RC High to Column Address TransitionMin50ns
(1)
RC High to Output ValidMax150ns
(1)
Output Enable Low to Output ValidMax50ns
RP High to Row Address ValidMin1µs
Output Enable Low to Output TransitionMin0ns
Output Enable High to Output Hi-ZMax50ns
Output Hold from Output Enable HighMin0ns
– t
CHQV
after the rising edge of RC without impact on t
GLQV
CHQV
.
Figure 15. A/A Mux Interface Write AC Waveforms
M50FW080
A0-A10
RC
W
G
RB
V
PP
DQ0-DQ7
Write erase or
program setup
R1
tAVCL
tWLWH
C1
tCLAX
tWHWL
Write erase confirm or
valid address and data
R2C2
tAVCH
tCHAX
tVPHWHtWHGL
D
IN1
tWHRL
Automated erase
or program delay
tCHWH
D
IN2
Read Status
Register Data
tQVVPL
tWHDXtDVWH
VALID SRD
Ready to write
another command
AI04194
33/47
M50FW080
Table 25. A/A Mux Interface Write AC Characteristics
Figure 17. TSOP32 – 32 lead Plastic Thin Small Outline, 8x14 mm, Package Outline
A2
M50FW080
1
N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Note: Drawing is not to scale.
LA1α
Table 27. TSOP32 – 32 lead Plastic Thin Small Outline, 8x14 mm, Package Mechanical Data
Symbol
TypMinMaxTypMinMax
A1.2000.0472
A10.0500.1500.00200.0059
millimetersinches
A20.9501.0500.03740.0413
α0505
B0.1700.2700.00670.0106
C0.1000.2100.00390.0083
CP0.1000.0039
D13.80014.2000.54330.5591
D112.30012.5000.48430.4921
e0.500 ––0.0197––
E7.9008.1000.31100.3189
L0.5000.7000.01970.0276
N3232
37/47
M50FW080
Figure 18. TSOP40 – 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Outline
A2
1
N
e
E
B
N/2
D1
D
DIE
A
CP
C
TSOP-a
Note: Drawing is not to scale.
LA1α
Table 28. TSOP40 – 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Mechanical Data
Symbol
TypMinMaxTypMinMax
A1.200 0
A10.0500.15000
millimetersinches
A20.9501.05000
B0.1700.27000
C0.1000.21000
CP0.1000
D19.80020.20011
D118.30018.50011
e0.500 ––0––
E9.90010.10000
L0.5000.70000
α0505
N4040
38/47
PART NUMBERING
Table 29. Ordering Information Scheme
Example:M50FW080 N5TG
Device Type
M50 = Flash Memory for PC BIOS
Architecture
F = Firmware Hub Interface
Operating Voltage
W = V
Device Function
080 = 8 Mbit (1Mbx8), Uniform Blocks
Package
K = PLCC32
NB = TSOP32: 8 x 14mm
N = TSOP40: 10 x 20mm
= 3.0 to 3.6V
CC
M50FW080
Device Grade
5 = Temperature range –20 to 85 °C.
Device tested with standard test flow
1 = Temperature range 0 to 70 °C.
Device tested with standard test flow
Option
blank = Standard Packing
T = Tape and Reel Packing
Plating Technology
blank = Standard SnPb plating
G = Lead-Free, RoHS compliant, Sb
-free and TBBA-free
2O3
Devices are shipped from the factory with the
memory content bits erased to ’1’.
For a list of available options (Speed, Package,
etc.) or for further information on any aspect of this
device, please contact the ST Sales Office nearest
to you.
39/47
M50FW080
APPENDIX A. FLOWCHARTS AND PSEUDO CODES
Figure 19. Program Flowchart and Pseudo Code
Start
FWH/LPC
Interface
Only
Write 40h or 10h
Write Address
and Data
Read Status
Register
SR7 = 1
YES
SR3 = 0
YES
SR4 = 0
YES
SR1 = 0
YES
End
NO
NO
NO
NO
NO
Suspend
Program to Protected
YES
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
Block Error (1, 2)
Program command:
– Write 40h or 10h
– Write Address and Data
(memory enters read status state after
the Program command)
do:
– Read Status Register
– If SR7=0 and a Program/Erase Suspend
command has been executed
– SR7 is set to 1
– Enter suspend program loop
Suspend
Loop
If SR3 = 1,
– Enter the "VPP invalid" error handler
If SR4 = 1,
– Enter the "Program error" error handler
If SR1 = 1,
– Enter the "Program to protected
block" error handler
AI08425B
Note: 1. A Status check of SR1 (Protected Block), SR3 (VPP invalid) and SR4 (Program Error) can be made after each Program operation
by following the correct command sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
40/47
M50FW080
Figure 20. Quadruple Byte Program Flowchart and Pseudo Code (A/A Mux Interface Only)
Start
Write 30h
Write Address 1
Write Address 2
Write Address 3
Write Address 4
Read Status
& Data 1
& Data 2
& Data 3
& Data 4
Register
SR7 = 1
SR3 = 0
(3)
(3)
(3)
(3)
YES
YES
NO
NO
NO
Suspend
YES
Suspend
VPP Invalid
Error (1, 2)
Loop
Quadruple Byte Program command:
– write 30h
– write Address 1 & Data 1
– write Address 2 & Data 2
– write Address 3 & Data 3
– write Address 4 & Data 4
(memory enters read status state after
the Quadruple Byte Program command)
do:
– Read Status Register
– If SR7=0 and a Program/Erase Suspend
command has been executed
– SR7 is set to 1
– Enter suspend program loop
If SR3 = 1, VPP invalid error:
– error handler
(3)
(3)
(3)
(3)
SR4 = 0
End
Note: 1. A Status check of SR3 (VPP invalid) and SR4 (Program Error) can be made after each Program operation by following the correct
command sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
3. Address1, Address 2, Address 3 and Address 4 must be consecutive addresses differing only for address bits A0 and A1.
NO
YES
Program
Error (1, 2)
If SR4 = 1, Program error:
– error handler
AI08437B
41/47
M50FW080
Figure 21. Program Suspend and Resume Flowchart and Pseudo Code
Start
Write B0h
Program/Erase Suspend command:
Write 70h
Read Status
Register
– write B0h
– write 70h
do:
– read Status Register
SR7 = 1
YES
SR2 = 1
YES
Write a read
Command
Read data from
another address
Write D0h
Program Continues
NO
NO
Program Complete
Write FFh
Read Data
while SR7 = 0
If SR2 = 0 Program completed
Program/Erase Resume command:
– write D0h to resume the program
– if the Program operation completed
then this is not necessary.
The device returns to Read as
normal (as if the Program/Erase
suspend was not issued).
AI08426B
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase operations.
2. Any address within the bank can equally be used.
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
AI08428B
43/47
M50FW080
Figure 23. Block Erase Flowchart and Pseudo Code
Start
Write 20h/32h
Write Block
Address and D0h
Read Status
Register
SR7 = 1
YES
SR3 = 0
YES
SR4, SR5 = 0
YES
SR5 = 0
NO
NO
NO
NO
NO
Suspend
VPP Invalid
Sequence Error (1)
Erase Error (1)
YES
Suspend
Error (1)
Command
Block Erase command:
– Write 20h/32h
– Write block Address and D0h
(memory enters read Status Register after
the Block Erase command)
do:
– Read Status Register
– If SR7=0 and a Program/Erase Suspend
command has been executed
– SR7 is set to 1
– Enter suspend program loop
Loop
If SR3 = 1,
– Enter the "VPP invalid" error handler
If SR4, SR5 = 1,
– Enter the "Command sequence"error handler
If SR5 = 1,
– Enter the "Erase Error" error handler
YES
FWH/LPC
Interface
Only
Note: 1. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
SR1 = 0
End
YES
NO
Erase to Protected
Block Error (1)
If SR1 = 1,
– Enter the "Erase to protected block"
error handler
44/47
AI08424B
Figure 24. Erase Suspend and Resume Flowchart and Pseudo Code
Start
Write B0h
Program/Erase Suspend command:
Write 70h
– write B0h
– write 70h
M50FW080
Read Status
Register
SR7 = 1
YES
SR6 = 1
YES
Read data from
another block/sector
or
Program
Write D0h
Erase Continues
NO
NO
Erase Complete
Write FFh
Read Data
do:
– read Status Register
while SR7 = 0
If SR6 = 0, Erase completed
Program/Erase Resume command:
– write D0h to resume erase
– if the Erase operation completed
then this is not necessary.
The device returns to Read as
normal (as if the Program/Erase
suspend was not issued).
AI08429B
45/47
M50FW080
REVISION HISTORY
Table 30. Document Revision History
DateVersionRevision Details
April 2001-01First Issue
18-May-2001-02Document type: from Product Preview to Preliminary Data
22-Jun-2001-03PLCC32 package added
6-Jul-2001-04Note 2 changed (Table 15., Absolute Maximum Ratings)
30-Jan-2002-05Document promoted from Preliminary Data to Full Data Sheet
01-Mar-2002-06RFU pins must be left disconnected
12-Mar-2002-07Specification of PLCC32 package mechanical data revised
19-May-20048.0
19-Aug-20049.0Pins 2 and 5 of the TSOP32 Connections illustration corrected
TSOP32 package added. Part numbering information updated. Flow-chart
illustrations, in Appendix, updated. Document reformatted
46/47
M50FW080
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