housing for 120 mAh battery & crystal, pack. outline . . . . . . . . . . 26
®
outline. . . . . . . . . . . . . . . . . 24
4/30Doc ID 7019 Rev 9
M48T37Y, M48T37VDescription
1 Description
The M48T37Y/V TIMEKEEPER® RAM is a 32 Kb x 8 non-volatile static RAM and real-time
clock. The monolithic chip is available in a special package which provides a highly
integrated battery-backed memory and real-time clock solution.
The 44-lead, 330 mil SOIC package provides sockets with gold-plated contacts at both ends
for direct connection to a separate SNAPHAT housing containing the battery and crystal.
The unique design allows the SNAPHAT
the SOIC package after the completion of the surface mount process.
Insertion of the SNAPHAT housing after reflow prevents potential battery and crystal
damage due to the high temperatures required for device surface-mounting. The SNAPHAT
housing is keyed to prevent reverse insertion.
The SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape
& reel form. For the 44-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part
number is “M4T28-BR12SH” or “M4T32-BR12SH”.
Caution:Do not place the SNAPHAT battery/crystal top in conductive foam, as this will drain the
lithium button-cell battery.
Figure 1.Logic diagram
®
battery/crystal package to be mounted on top of
A0-A14
W
WDI
V
CC
15
M48T37Y
E
G
M48T37V
V
SS
8
DQ0-DQ7
RST
IRQ/FT
AI02172
Doc ID 7019 Rev 95/30
DescriptionM48T37Y, M48T37V
Table 1.Signal names
A0-A14Address inputs
DQ0-DQ7Data inputs / outputs
RSTReset output (open drain)
IRQ/FTInterrupt / frequency test output (open drain)
NC
NC
NC
IRQ/FT
W
A13
A8
A9
A11
G
NC
NC
A10
E
NC
DQ7
DQ6
DQ5DQ1
DQ4
DQ3
NC
AI02174
6/30Doc ID 7019 Rev 9
M48T37Y, M48T37VDescription
Figure 3.Block diagram
IRQ/FTWDI
OSCILLATOR AND
CLOCK CHAIN
32,768 Hz
CRYSTAL
POWER
16 x 8 BiPORT
SRAM ARRAY
A0-A14
LITHIUM
CELL
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
CC
RSTV
V
PFD
32,752 x 8
SRAM ARRAY
V
SS
DQ0-DQ7
E
W
G
AI03253
Doc ID 7019 Rev 97/30
Operation modesM48T37Y, M48T37V
2 Operation modes
As Figure 3 on page 7 shows, the static memory array and the quartz controlled clock
oscillator of the M48T37Y/V are integrated on one silicon chip. The memory locations that
provide user accessible BYTEWIDE™ clock information are in the bytes with addresses
7FF1 and 7FF9h-7FFFh (located in Table 5 on page 13). The clock locations contain the
century, year, month, date, day, hour, minute, and second in 24-hour BCD format.
Corrections for 28, 29 (leap year - valid until the year 2100), 30, and 31 day months are
made automatically.
Byte 7FF8h is the clock control register. This byte controls user access to the clock
information and also stores the clock calibration setting.
Byte 7FF7h contains the watchdog timer setting. The watchdog timer redirects an out-ofcontrol microprocessor and provides a reset or interrupt to it. Bytes 7FF2h-7FF5h are
reserved for clock alarm programming. These bytes can be used to set the alarm. This will
generate an active low signal on the IRQ
hours, minutes, and seconds of the clock. The eight clock bytes are not the actual clock
counters themselves; they are memory locations consisting of BiPORT™ READ/WRITE
memory cells. The M48T37Y/V includes a clock control circuit which updates the clock bytes
with current information once per second. The information can be accessed by the user in
the same manner as any other location in the static memory array.
/FT pin when the alarm bytes match the date,
The M48T37Y/V also has its own power-fail detect circuit. The control circuitry constantly
monitors the single V
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
battery backup switchover voltage (V
maintains data and clock operation until valid power returns.
Table 2.Operating modes
ModeV
Deselect
WRITEV
READV
READV
DeselectV
Deselect≤ V
1. See Table on page 23 for details.
Note:X = V
or VIL; VSO = Battery backup switchover voltage.
IH
SO
2.1 READ mode
The M48T37Y/V is in the READ mode whenever WRITE enable (W) is high and chip enable
(E
) is low. The unique address specified by the 15 address inputs defines which one of the
32,752 bytes of data is to be accessed. Valid data will be available at the data I/O pins within
address access time (t
and output enable (G
supply for an out of tolerance condition. When VCC is out of
CC
. As VCC falls below the
CC
IN
D
OUT
High ZActive
Active
Active
CC
4.5 to 5.5 V
or
3.0 to 3.6 V
to V
PFD
SO
AVQ V
(min)
(1)
), the control circuitry connects the battery which
SO
EGWDQ0-DQ7Power
XXHigh ZStandby
XVILD
V
V
V
IL
IH
IH
V
IH
(1)
V
IH
IL
IL
IL
XXXHigh ZCMOS standby
XXXHigh ZBattery backup mode
) after the last address input signal is stable, providing that the E
) access times are also satisfied. If the E and G access times are not
8/30Doc ID 7019 Rev 9
M48T37Y, M48T37VOperation modes
met, valid data will be available after the latter of the chip enable access time (t
output enable access time (t
The state of the eight three-state data I/O signals is controlled by E
activated before t
, the data lines will be driven to an indeterminate state until t
AVQ V
If the address inputs are changed while E
for output data hold time (t
AXQX
).
GLQV
and G. If the outputs are
and G remain active, output data will remain valid
) but will be indeterminate until the next address access.
Figure 4.READ mode AC waveforms
tAVAV
A0-A14
tAVQVtAXQX
tELQV
E
tELQX
tGLQV
G
tGLQX
DQ0-DQ7
VAL ID
tGHQZ
VAL ID
ELQV
) or
AVQ V
tEHQZ
AI00925
.
Note:WRITE enable (W
Table 3.READ mode AC characteristics
SymbolParameter
t
AVAV
t
AVQ V
t
ELQV
t
GLQV
t
ELQX
t
GLQX
t
EHQZ
t
GHQZ
t
AXQX
1. Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V
(except where noted).
2. CL = 5 pF.
READ cycle time70100ns
Address valid to output valid70100ns
Chip enable low to output valid70100ns
Output enable low to output valid3550ns
(2)
Chip enable low to output transition510ns
(2)
Output enable low to output transition55ns
(2)
Chip enable high to output Hi-Z2550ns
(2)
Output enable high to output Hi-Z2540ns
Address transition to output transition1010ns
) = high.
(1)
M48T37YM48T37V
Unit–70–100
MinMaxMinMax
Doc ID 7019 Rev 99/30
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