ST M48T201Y, M48T201V User Manual

查询M48T201V-85MH1供应商
FEAT URES SUM MARY
CONVERTS LOW POWER SRAM INTO
NVRAMs
BATTERY LOW FLAG
INTEGRATED RE AL T IME C LOCK, POWER-
FAIL CONTROL CIRCUIT, BATTERY AND CRYSTAL
WATCHDOG TIMER
CHOICE OF WRITE PROTECT VOLTA GES
= Power-fail Deselect Voltage):
(V
PFD
M48T201Y: V
4.1VV
PFD
M48T201V: V
2.7VV
MICROPROCESSOR POWER-ON RESET
PFD
(Valid even during battery back-up mode.)
PROGRAMMABLE ALAR M OUTPUT
ACTIVE IN THE BATTERY BACKED-UP MODE
PACKAGING INCLUDES A 44-LEAD SOIC
AND SNAPHAT separately)
SOIC PACKAGE PROVIDES DIRECT
CONNECTION FOR A SNAPHAT WHICH CONTAINS THE BATTERY AND CRYSTAL
= 4.5 to 5.5V
CC
4.5V
= 3.0 to 3.6V
CC
3.0V
®
TOP (to be ordered
®
TOP
M48T201Y M48T201V
5.0 or 3.3V TIMEKEEPER® Supervisor
Figure 1. Package
SNAPHAT (SH)
Crystal/Battery
44
1
SOH44 (MH)
44-pin SOIC
1/33September 2004
M48T201Y, M48T201V
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 1. Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 3. SOIC Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 4. Hardware Hookup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Address Decoding. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 2. Operating Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
READ Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 5. G
Figure 6. READ Cycle Timing: RTC and External RAM Control Signals . . . . . . . . . . . . . . . . . . . . .9
Table 3. RE A D Mode AC Charac teristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
WRITE Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7. WRITE Cycle Timing: RTC & External RAM Control Signals . . . . . . . . . . . . . . . . . . . . .11
Table 4. WRITE Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Data Retention Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Timing When Switching Between RTC and External SRAM. . . . . . . . . . . . . . . . . . 8
CON
CLOCK OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
TIMEKEEPER® Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Reading the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Setting the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Stopping and Starting the Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5. TIMEKEEPER® Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Setting the Alarm Clock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 8. Alarm Interrupt Reset Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. A larm Repeat Modes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Figure 9. Back-up Mode Alarm Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Watchdog Timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Square Wave Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 7. S quare Wav e Output Frequen cy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Power-on Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Reset Inputs (RSTIN1
Figure 10.RSTIN1
Table 8. Reset AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Calibrating the Clock. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 11.Crystal Accuracy Across Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 12.Calibration Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Battery Low Warning. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Initial Power-on Defaults. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
& RSTIN2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
and RSTIN2 Timing Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/33
M48T201Y, M48T201V
Table 9. Default Values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
V
Noise And Negative Going Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
CC
Figure 13.Supply Voltage Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 10.Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 11. DC and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Figure 14.AC Testing Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 12.Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 13.DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 15.Power Down/Up Mode AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 14.Power Down/Up Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
PACKAGE MECHANICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 16.SOH44 – 44-lead Plastic Small Outline, SNAPHAT, Package Outlin e . . . . . . . . . . . . . . 28
Table 15. SOH44 – 44-lead Plastic Small Outline, SNAPHAT, Package Mechanical Data . . . . . . 28
Figure 17.SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Outline . . . . . . . 29
Table 16. SH – 4-pin SNAPHAT Housing for 48mAh Battery & Crystal, Package Mech. Data. . . . 29
Figure 18.SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Outline . . . . . . 30
Table 17. SH – 4-pin SNAPHAT Housing for 120mAh Battery & Crystal, Package Mech. Data. . . 30
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 18.Ordering Information Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 19.SNAPHAT® Battery Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 20.Document Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3/33
M48T201Y, M48T201V
DESCRIPTION
The M48T201Y/V are self-co ntained devices that include a real time clock (RTC), programmable alarms, a watchdog timer, and a square wave out­put which provides control of up to 512K x 8 of ex­ternal low-power static RAM. Access to all RTC functions and the external RAM is the same as conventional bytewide SRAM. The 16 TIME­KEEPER
®
registers offer year, month, date, day, hour, minute, second, calibration, alarm, century, watchdog, and square wave output data. External­ly attached static RAMs are controlled by the M48T201Y/V via the G
CON
and E
CON
signals.
The 44-pin, 330mil SOIC provides sockets with gold plated contacts at bot h ends for direct con­nection to a separate SNAPHAT
®
housing con­taining the battery and crystal. The unique design allows the SNAPHAT battery package to be
Figure 2. Logic Diagram Table 1. Signal Names
mounted on top of the SOIC package after the completion of the surface mount process.
Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-moun t­ing. The SNAPHAT hous ing is keyed to prevent reverse insertion. The SOIC and battery packages are shipped separately in plastic anti-static tubes or in Tape & Reel form. For the 44-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part number is “M4Txx-BR12SH” (see Table
19., page 31).
Caution: Do not place the SNAPHAT battery/crys­tal top in conductive foam as this will drain the lith­ium button-cell battery.
A0-A18 Address Inputs
A0-A18
WDI
W
RSTIN1
RSTIN2
DQ0-DQ7 Data Inputs / Outputs
V
CC
19
M48T201Y
E
G
M48T201V
V
SS
8
DQ0-DQ7
IRQ/FT
RST
G
CON
E
CON
SQW
V
OUT
AI02240
RSTIN1 RSTIN2
RST WDI Watchdog Input
E G
W
E
CON
G
CON
/FT
IRQ
SQW Square Wave Output V
OUT
V
CC
Reset 1 Input Reset 2 Input Reset Output (Open Drain)
Chip Enable Input Output Enable Input WRITE Enable Input RAM Chip Enable Output RAM Enable Output Interrupt / Frequency Test Output
(Open Drain)
Supply Voltage Output Supply Voltage
4/33
V
SS
NC Not Connected Internally
Ground
Figure 3. SOIC Connections
M48T201Y, M48T201V
RSTIN1 RSTIN2
RST
NC A18 A16 A14 A12
A7 A6 A5 A4 A3 A2 A1 A0
WDI
G
CON
DQ0 DQ1 DQ2 21 V
SS
1 2 3 4 5 6 7 8 9 10 11
M48T201Y
12
M48T201V
13 14 15 16 17 18 19 20
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 2322
AI02241
V
CC
V
OUT
SQW IRQ/FT A17 A15 A13 A8 A9 A11 G W NC A10 E E
CON
DQ7 DQ6 DQ5 DQ4 DQ3 NC
5/33
M48T201Y, M48T201V
Figure 4. Hardware Hookup
0.1µF
5V
32,768 Hz CRYSTAL
LITHIUM
CELL
M48T201Y/V
V
CC
E W G WDI RSTIN1 RSTIN2 V
SS
A0-A18
IRQ/FT
DQ0-DQ7
V
OUT
ECON
GCON
RST
SQW
0.1µF
V E2
E W G
V
A0-Axx
CC
(1)
CMOS SRAM
SS
DQ0-DQ7
AI00604
Note: 1. If the se cond chip enabl e pin (E2) is unused, it sh ould be tied to V
OUT
.
6/33
OPERATION
Automatic backup and write protection for an ex-
, E
ternal SRAM is provided through V G
pins. (Users are urged to insure that voltage
CON
OUT
specifications, for both the SUPERVISOR chip and external SRAM chosen, are similar.) The SNAPHAT
®
containing the lithium energy source is used to retain the RTC and RAM data in the ab­sence of V chip enable output to RAM (E enable output to RAM (G
power through the V
CC
CON
OUT
) and the output
CON
) are controlled dur­ing power transients to prevent data corruption. The date is automatically adjusted for months with less than 31 days and corrects for leap years (valid until 2100). The internal watchdog timer prov ides programmable alarm windows.
The nine clock bytes (7FFFFh-7FFF9h and 7FFF1h) are not the actual clock counters, they are memory locations consisting of BiPORT™ READ/WRITE memory cells within the static RAM array. Clock circuitry updates the clock bytes with current information once per second. The informa­tion can be accessed by the user in the same man­ner as any other location in the static memory array. Byte 7FFF8h is the clock control register. This byte controls user access to the clock infor­mation and also stores the clock calibration set­ting.
Byte 7FFF7h contains the watchdog timer setting. The watchdog timer can generate either a reset or an interrupt, depending on the state of the Watch­dog Steering Bit (WDS). Bytes 7FFF6h-7FFF2h include bits that, when programmed, provide for clock alarm functionality. Alarms are activated when the register content matches the month,
, and
CON
pin. The
M48T201Y, M48T201V
date, hours, minutes, and seconds of the clock registers. Byte 7FFF1h contains ce ntury informa­tion. Byte 7FFF0h contains additional flag informa­tion pertaining to the watchdog timer, the alarm condition, the battery status and square wave out­put operation. 4 bits are included within this regis­ter (RS0-RS3) that are used to program the Square Wave Output Frequency (see Table
7., page 18). The M48T201Y/V also has its own
Power-Fail Detect circuit. This control circuitry constantly monitors the supply voltage for an out of tolerance condition. When V ance, th e cir cuit wri te pro tect s the TIMEK EEPER register data and external SRAM, providing dat a security in the midst of unpredictable system oper­ation. As V Switchover Voltage (V
falls below the Battery Back-up
CC
), the control circuitry au-
SO
tomatically switches to the battery, maintaining data and clock operation until valid power is re­stored.
Address Decoding
The M48T201Y/V accommodates 19 address lines (A0-A18) which allow direct connection of up to 512K bytes of static RAM. Regardless of SRAM density used, timekeeping, watchdog, alarm, cen­tury, flag, and control regi sters are located in the upper RAM locations. All TIMEKEEPER registers reside in the upper R AM l oc ations without conflict by inhibiting the G
(output enable RAM) signal
CON
during clock access . The RAM's physica l location s are transparent to the user and the memory m ap looks continuous from the first clock address to the upper most attached RAM addresses.
is out of toler-
CC
®
Table 2. Operating Modes
Mode
Deselect
WRITE
READ READ
Deselect Deselect
Note: X = VIH or VIL; VSO = Battery B ack-up Switc hover Volta ge
1. See Table 14., page 27 for details.
VSO to V
V
CC
4.5V to 5.5V or
3.0V to 3.6V
(min)
PFD
(1)
V
SO
(1)
E G W DQ7-DQ0 Power
V
IH
V
IL
V
IL
V
IL
X X X High-Z CMOS Standby X X X High-Z Battery Back-Up
X X High-Z Standby X
V
IL
V
IH
V
IL
V
IH
V
IH
D
IN
D
OUT
High-Z Active
Active Active
7/33
M48T201Y, M48T201V
READ Mode
The M48T201Y/V executes a RE AD Cycle when­ever W able) is low. The unique address specified by the address inputs (A0-A18) def ines wh ich one of the on-chip TIMEKEEPER SRAM locations is to be acc essed. Whe n the ad­dress presented to the M48T201Y/V is in the range of 7FFFFh-7FFF0h, one of the on-board TIMEKEEPER registers is accessed and valid data will be available to the eight data output driv­ers within t stable, providing that the E are also satisfied. If they are not, then data access
(WRITE Enable) is high and E (Chip En-
®
registers or external
after the address input signal is
AVQV
and G access times
must be measured from the latter occurring signal
or G) and the limiting parameter is either t
(E for E or t
for G rather than the address access
GLQV
ELQV
time. When one of the on-chip TIMEKEEPER reg­isters is select ed for RE AD, the G
signal wi ll
CON
remain inactive throughout the READ Cycle. When the address value presented to the
M48T201Y/V is outside the range of TIMEKEEP­ER registers, an external SRAM location will be selected. In this case the G
or t
pin, with the specified dela y times of
CON
.
OERL
to the G t
AOEL
signal will be passed
Figure 5. G
ADDRESS
G
G
CON
E
Timing When Switching Between RTC and External SRAM
CON
00000h - 7FFEFh 7FFF0h - 7FFFFh 00000h - 7FFEFh7FFF0h - 7FFFFh
RTC
External SRAM
tAOEL
RTC
tAOEH
tOERL
External SRAM
tRO
AI02333
8/33
Figure 6. READ Cycle Timing: RTC and External RAM Control Signals
READ READ WRITE
tAVAV
ADDRESS
tAVAV tAVAV
M48T201Y, M48T201V
E
G
G
CON
E
CON
W
DQ0-DQ7
tEPD
tELQV
tELQX
tGLQV
tAVQV tWHAXtAVWL
tAXQXtGLQX
DATA OUT
VALID
tRO
tWLWH
DATA OUT
VALID
tGHQZ
DATA IN
VALID
AI02334
9/33
M48T201Y, M48T201V
Table 3. READ Mode AC Characteristics
M48T201Y M48T201V
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
ELQX
t
GLQX
t
EHQZ
t
GHQZ
t
AXQX
t
AOEL
t
AOEH
t
EPD
t
OERL
t
RO
Note: 1. Vali d fo r Ambient Op erating Temperature : TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3. 0 to 3.6V (exc ept where not ed).
2. C
READ Cycle Time 70 85 ns Address Valid to Output Valid 70 85 ns Chip Enable Low to Output Valid 70 85 ns Output Enable Low to Output Valid 25 35 ns
(2)
Chip Enable Low to Output Transition 5 5 ns
(2)
Output Enable Low to Output Transition 0 0 ns
(2)
Chip Enable High to Output Hi-Z 20 25 ns
(2)
Output Enable High to Output Hi-Z 20 25 ns Address Transition to Output Transition 5 5 ns
External SRAM Address to G SUPERVISOR SRAM Address to G E to E
CON
G Low to G G High to G
= 5pF.
L
Parameter
Low or High
Low
CON
High
CON
(1)
CON
Low
CON
High
Min Max Min Max
20 30 ns 20 30 ns 10 15 ns 15 20 ns 10 15 ns
Unit–70 –85
10/33
WRITE Mode
The M48T201Y/V is in the WRITE Mode whenever
(WRITE Enable) and E (Chip Ena ble) are low
W state after the address inputs are stable. The start of a WRITE is referenced from the latter occurring falling edge of W the earlier rising edge of W must be held valid th roughout the cycle. E must return high for a minimum of t Enable or t
or E. A WRITE is terminated by
or E. The addresses
from WRITE Enable prior to the
WHAX
EHAX
or W
from Chip
initiation of another READ or WRITE Cycle. Data­in must be valid t and remain valid for t
prior to the end of WRITE
DVWH
afterw ard. G should be
WHDX
tention; although, if the output bu s has be en acti­vated by a low on E the outputs t
WLQZ
When the address value presented to the M48T201Y/V during the WRITE is in the range of 7FFFFh-7FFF0h, one of the on-board TIME­KEEPER
®
registers will be selected and data will be written into the device. When the address value presented to M48T201Y/V is outside the range of TIMEKEEPER registers, an external SRAM loca­tion is selected .
kept high during WRI TE Cyc les to avoid bus con-
Figure 7. WRITE Cycle Timing: RTC & External RAM Control Signals
WRITE WRITE READ
tAVAV
ADDRESS
tAVAV
M48T201Y, M48T201V
and G a low on W will disable
after W falls.
tAVAV
E
E
CON
G
G
CON
W
DQ0-DQ7
tAVEL
tAVWL
DATA OUT
VALID
tEPD
tRO
tAVEH
tELEH tEHAX
tEPD
tWLWH
tEHQZ
DATA IN
tEHDX
tDVEH
VALID
tAVWH
tDVWH
tWHAX
DATA IN
VALID
tWHQX
tWHDX
tAVQV
tGLQV
DATA OUT
tWLQZ
VALID
AI02336
11/33
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