The M48T201Y/V are self-co ntained devices that
include a real time clock (RTC), programmable
alarms, a watchdog timer, and a square wave output which provides control of up to 512K x 8 of external low-power static RAM. Access to all RTC
functions and the external RAM is the same as
conventional bytewide SRAM. The 16 TIMEKEEPER
®
registers offer year, month, date, day,
hour, minute, second, calibration, alarm, century,
watchdog, and square wave output data. Externally attached static RAMs are controlled by the
M48T201Y/V via the G
CON
and E
CON
signals.
The 44-pin, 330mil SOIC provides sockets with
gold plated contacts at bot h ends for direct connection to a separate SNAPHAT
®
housing containing the battery and crystal. The unique design
allows the SNAPHAT battery package to be
Figure 2. Logic DiagramTable 1. Signal Names
mounted on top of the SOIC package after the
completion of the surface mount process.
Insertion of the SNAPHAT housing after reflow
prevents potential battery damage due to the high
temperatures required for device surface-moun ting. The SNAPHAT hous ing is keyed to prevent
reverse insertion. The SOIC and battery packages
are shipped separately in plastic anti-static tubes
or in Tape & Reel form. For the 44-lead SOIC, the
battery/crystal package (e.g., SNAPHAT) part
number is “M4Txx-BR12SH” (see Table
19., page 31).
Caution: Do not place the SNAPHAT battery/crystal top in conductive foam as this will drain the lithium button-cell battery.
Note: 1. If the se cond chip enabl e pin (E2) is unused, it sh ould be tied to V
OUT
.
6/33
OPERATION
Automatic backup and write protection for an ex-
, E
ternal SRAM is provided through V
G
pins. (Users are urged to insure that voltage
CON
OUT
specifications, for both the SUPERVISOR chip
and external SRAM chosen, are similar.) The
SNAPHAT
®
containing the lithium energy source
is used to retain the RTC and RAM data in the absence of V
chip enable output to RAM (E
enable output to RAM (G
power through the V
CC
CON
OUT
) and the output
CON
) are controlled during power transients to prevent data corruption.
The date is automatically adjusted for months with
less than 31 days and corrects for leap years (valid
until 2100). The internal watchdog timer prov ides
programmable alarm windows.
The nine clock bytes (7FFFFh-7FFF9h and
7FFF1h) are not the actual clock counters, they
are memory locations consisting of BiPORT™
READ/WRITE memory cells within the static RAM
array. Clock circuitry updates the clock bytes with
current information once per second. The information can be accessed by the user in the same manner as any other location in the static memory
array. Byte 7FFF8h is the clock control register.
This byte controls user access to the clock information and also stores the clock calibration setting.
Byte 7FFF7h contains the watchdog timer setting.
The watchdog timer can generate either a reset or
an interrupt, depending on the state of the Watchdog Steering Bit (WDS). Bytes 7FFF6h-7FFF2h
include bits that, when programmed, provide for
clock alarm functionality. Alarms are activated
when the register content matches the month,
, and
CON
pin. The
M48T201Y, M48T201V
date, hours, minutes, and seconds of the clock
registers. Byte 7FFF1h contains ce ntury information. Byte 7FFF0h contains additional flag information pertaining to the watchdog timer, the alarm
condition, the battery status and square wave output operation. 4 bits are included within this register (RS0-RS3) that are used to program the
Square Wave Output Frequency (see Table
7., page 18). The M48T201Y/V also has its own
Power-Fail Detect circuit. This control circuitry
constantly monitors the supply voltage for an out
of tolerance condition. When V
ance, th e cir cuit wri te pro tect s the TIMEK EEPER
register data and external SRAM, providing dat a
security in the midst of unpredictable system operation. As V
Switchover Voltage (V
falls below the Battery Back-up
CC
), the control circuitry au-
SO
tomatically switches to the battery, maintaining
data and clock operation until valid power is restored.
Address Decoding
The M48T201Y/V accommodates 19 address
lines (A0-A18) which allow direct connection of up
to 512K bytes of static RAM. Regardless of SRAM
density used, timekeeping, watchdog, alarm, century, flag, and control regi sters are located in the
upper RAM locations. All TIMEKEEPER registers
reside in the upper R AM l oc ations without conflict
by inhibiting the G
(output enable RAM) signal
CON
during clock access . The RAM's physica l location s
are transparent to the user and the memory m ap
looks continuous from the first clock address to the
upper most attached RAM addresses.
is out of toler-
CC
®
Table 2. Operating Modes
Mode
Deselect
WRITE
READ
READ
Deselect
Deselect
Note: X = VIH or VIL; VSO = Battery B ack-up Switc hover Volta ge
1. See Table 14., page 27 for details.
VSO to V
V
CC
4.5V to 5.5V
or
3.0V to 3.6V
(min)
PFD
(1)
≤ V
SO
(1)
EGWDQ7-DQ0Power
V
IH
V
IL
V
IL
V
IL
XXXHigh-ZCMOS Standby
XXXHigh-ZBattery Back-Up
XXHigh-ZStandby
X
V
IL
V
IH
V
IL
V
IH
V
IH
D
IN
D
OUT
High-ZActive
Active
Active
7/33
M48T201Y, M48T201V
READ Mode
The M48T201Y/V executes a RE AD Cycle whenever W
able) is low. The unique address specified by the
address inputs (A0-A18) def ines wh ich one of the
on-chip TIMEKEEPER
SRAM locations is to be acc essed. Whe n the address presented to the M48T201Y/V is in the
range of 7FFFFh-7FFF0h, one of the on-board
TIMEKEEPER registers is accessed and valid
data will be available to the eight data output drivers within t
stable, providing that the E
are also satisfied. If they are not, then data access
(WRITE Enable) is high and E (Chip En-
®
registers or external
after the address input signal is
AVQV
and G access times
must be measured from the latter occurring signal
or G) and the limiting parameter is either t
(E
for E or t
for G rather than the address access
GLQV
ELQV
time. When one of the on-chip TIMEKEEPER registers is select ed for RE AD, the G
signal wi ll
CON
remain inactive throughout the READ Cycle.
When the address value presented to the
M48T201Y/V is outside the range of TIMEKEEPER registers, an external SRAM location will be
selected. In this case the G
or t
pin, with the specified dela y times of
CON
.
OERL
to the G
t
AOEL
signal will be passed
Figure 5. G
ADDRESS
G
G
CON
E
Timing When Switching Between RTC and External SRAM
Figure 6. READ Cycle Timing: RTC and External RAM Control Signals
READREADWRITE
tAVAV
ADDRESS
tAVAVtAVAV
M48T201Y, M48T201V
E
G
G
CON
E
CON
W
DQ0-DQ7
tEPD
tELQV
tELQX
tGLQV
tAVQVtWHAXtAVWL
tAXQXtGLQX
DATA OUT
VALID
tRO
tWLWH
DATA OUT
VALID
tGHQZ
DATA IN
VALID
AI02334
9/33
M48T201Y, M48T201V
Table 3. READ Mode AC Characteristics
M48T201YM48T201V
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
ELQX
t
GLQX
t
EHQZ
t
GHQZ
t
AXQX
t
AOEL
t
AOEH
t
EPD
t
OERL
t
RO
Note: 1. Vali d fo r Ambient Op erating Temperature : TA = 0 to 70°C; VCC = 4.5 to 5.5V or 3. 0 to 3.6V (exc ept where not ed).
2. C
READ Cycle Time7085ns
Address Valid to Output Valid7085ns
Chip Enable Low to Output Valid7085ns
Output Enable Low to Output Valid2535ns
(2)
Chip Enable Low to Output Transition55ns
(2)
Output Enable Low to Output Transition00ns
(2)
Chip Enable High to Output Hi-Z2025ns
(2)
Output Enable High to Output Hi-Z2025ns
Address Transition to Output Transition55ns
External SRAM Address to G
SUPERVISOR SRAM Address to G
E to E
CON
G Low to G
G High to G
= 5pF.
L
Parameter
Low or High
Low
CON
High
CON
(1)
CON
Low
CON
High
MinMaxMinMax
2030ns
2030ns
1015ns
1520ns
1015ns
Unit–70–85
10/33
WRITE Mode
The M48T201Y/V is in the WRITE Mode whenever
(WRITE Enable) and E (Chip Ena ble) are low
W
state after the address inputs are stable. The start
of a WRITE is referenced from the latter occurring
falling edge of W
the earlier rising edge of W
must be held valid th roughout the cycle. E
must return high for a minimum of t
Enable or t
or E. A WRITE is terminated by
or E. The addresses
from WRITE Enable prior to the
WHAX
EHAX
or W
from Chip
initiation of another READ or WRITE Cycle. Datain must be valid t
and remain valid for t
prior to the end of WRITE
DVWH
afterw ard. G should be
WHDX
tention; although, if the output bu s has be en activated by a low on E
the outputs t
WLQZ
When the address value presented to the
M48T201Y/V during the WRITE is in the range of
7FFFFh-7FFF0h, one of the on-board TIMEKEEPER
®
registers will be selected and data will
be written into the device. When the address value
presented to M48T201Y/V is outside the range of
TIMEKEEPER registers, an external SRAM location is selected .