The M440T1MV TIMEKEEPER® RAM i s a 16M bit ,
non-volatile static RAM organized as 1,024K by 32
bits and real time clock org anized as 64 bytes by
8 bits. The special PBGA package provides a fully
integrated battery back-up memory and real tim e
clock so lution. I n the e vent of powe r instab ility o r
absence, a self-contained battery maintains the
timekeeping operation and provides power for a
CMOS static RAM. Control circuitry monitors V
CC
and invokes write protection to prevent data corruption in the memory and RTC.
Figure 2. Logic DiagramTable 1. Signal Names
The clock keeps track of tenths/hundredths of seconds, seconds, minutes , hou rs, day, date, month,
and year information. The last day of the month is
automatically adjusted for months with less than
31 days, including leap year correction.
The clock operates in one of two formats:
–a 12-hour mode with an AM/PM indicator; or
–a 24-hour mode
The M440T1MV is in a 168-ball PBGA module that
integrates the RTC, the battery, and SRAM in one
package.
A0 - A19Address Inputs
DQ0 - DQ31NVRAM Data Input/Outp ut
Note: This diagra m is T OP VIEW perspective (vie w through package).
DQC2
DQ10
31
30
DQ9
32
DQ8
33
DQ15
35
34
IRQ
DQ14
36
DQ13
DQ12
37
38
V
DQ11
39
40
SS
AI04794
5/26
M440T1MV
Figure 4. M440T1MV Hardware Hookup
M48T224W
3.3V
V
CC
6
A0-A5
E
DQ0 - DQ7DQC0 - DQC7
W
INTB/INTB
G
E1
E2
E3
E4
SLEEP
THS
V
SS
SLEEP
PAD
EC
WC
GC
E1
E2
E3
E4
8k
Ω
V
OUTA
V
OUTA
E1
CON
E2
CON
BLBL
V
OUTB
E3
CON
E4
CON
IRQ
V
E
V
E
20
CC
1M x 8
20
CC
1M x 8
SRAM
A0-A19
SRAM
G
G
A0-A19
G
DQ0-DQ7
8
W
W1
DQ16-DQ23
8
W
W3
V
E
E
V
E
20
CC
CC
A0-A19
1M x 8
SRAM
G
G
A0-A19
20
1M x 8
SRAM
G
GG
DQ8-DQ15
8
W
W2
DQ24-DQ31
8
W
W4
AI04795
6/26
Figure 5. M4 40 T1MV PBGA Mo dule Solution ( S id e/Top)
M440T1MV
AI04628b
7/26
M440T1MV
OPERATION MODES
Memory READ Mode
The M440T1MV is in the 32-bit READ Mode whenever W1
and E1
(see Table 2., page 8). The uniq ue address specified by the 20 address inputs defines which one of
the 1,048,576 long words of data is to be accessed. Valid data will be available at the Data I/O pins
within Address Access Time (t
address input signal is st able, providing the E 1-4
and G access times are also satisfied. If the E1-4
and G access times are not met, valid data will be
available after the latter of the Chip Enable Access
Times (t
(t
The state of the thirty-two three-state Data I/O signals is controlled by E1-4
activated before t
to an indeterminate state until t
dress Inputs are changed while E1-4
main active, output data will remain valid for
Output Data Hold Time (t
minate until the next Address Access.
- W4 (WRITE Enable Byte 1 to 4) are high
- E4 - Chip Enable Bytes 1 to 4 are low
) after the last
AVQV
) or Output Enable Access Time
ELQV
).
GLQV
and G. If the outputs are
, the data lines will be driven
AVQV
AVQV
) but will go indeter-
AXQX
. If the Ad-
and G re-
Clock READ Mode
The clock is in the READ Mode whenever WC
(Clock WRITE Enable) is high and EC (Clock Chip
Enable) is low. The unique address specified by
the 6 Address Inputs defines wh ich one of the 64
bytes of clock data is to be accessed. Valid data
will be available at the Data I/O pins (DQC0-7)
within Address Access Time (t
) after the last
AVQV
address input signal is stable, providing the EC
and GC access times are also satisfied. If the EC
and GC access times are not met, valid data will
be available after the latter of the Chip Enable Access Times (t
).
(t
GLQV
) or Output Enable Access Time
ELQV
The state of the eight t hree-state Da ta I/O si gnals
is contr olled by E C
vated before t
an indeterminate state until t
Inputs are changed while EC
and G. If the outputs are acti-
, the data lines will be driven to
AVQV
. If the Address
AVQV
and G remain active,
output dat a will re main valid for Ou tput D ata H old
Time (t
) but will go indeterminate until the
AXQX
next Address Access. See section on Reading and
Setting the Clock under CLO CK OPER ATION for
more details.
Table 2. Memory Operating Modes
DQ24-
Mode
Byte WRITE
Byte WRITEHHLHHXXLXHi-ZHi-Z
Byte WRITEHLHHHXLXXHi-Z
Byte WRITELHHHHL X XX
Byte WRITEXXXLHHHHLHi-ZHi-ZHi-Z
Byte WRITEXXLXHHHLHHi-ZHi-Z
Byte WRITEXLXXHHLHHHi-Z
Byte WRITELXXXHLHHH
Long Word
WRITE
Byte READHHHLLXXXHHi-ZHi-ZHi-Z
Byte READHHLHLXXHXHi-ZHi-Z
Byte READHLHHLXHXXHi-Z
Byte READLHHHLHXXX
Long Word
READ
DeselectHHHHXXXXXHi-ZHi-ZHi-ZHi-ZStdby
Deselect
Deselect
Note: X = VIH or VIL; VSO = Battery B ack-up Switchover Voltage.
1. See Table 12., page 20 for details.
V
CC
2.97 to 3.6V
VSO to
(min)
V
PFD
(1)
≤ V
SO
E4E3E2E1GW4 W3 W2 W1
HHHLHXXXLHi-ZHi-ZHi-Z
LLLLHLLLL
LLLLLHHHH
XXXXXXXXXHi-ZHi-ZHi-ZHi-Z
(1)
XXXXXXXXXHi-ZHi-ZHi-ZHi-Z
DQ16-
DQ31
DQ23
D
IN
D
IN
D
IN
D
OUT
D
OUTDOUTDOUTDOUT
DQ8-
DQ0-
DQ15
D
IN
D
Hi-ZHi-ZActive
IN
Hi-ZHi-ZHi-ZActive
D
IN
D
Hi-ZHi-ZActive
IN
Hi-ZHi-ZHi-ZActive
D
D
IN
D
OUT
Hi-ZHi-ZHi-ZActive
IN
D
D
OUT
Hi-ZHi-ZActive
Power
DQ7
D
Active
IN
Hi-ZActive
D
Active
IN
Hi-ZActive
D
Active
IN
Active
OUT
Hi-ZActive
Active
CMOS
Standby
Battery
Back-up
Mode
8/26
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