The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16)
non-volatile memory that can be read, erased and
reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory d efaults to its
Read mode where it can be read in the same way
as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to pres erve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase c omm ands are wri tten to the Command Interface of t he memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents.
The end of a program or erase operation can be
detected and any error conditions identified. The
Figure 2. Logic DiagramTable 1. Signal Names
command set required to control the memory is
consistent with JEDEC standards.
The blocks in the memory are asymmetrically arranged, see Figures 5 and 6, Block Addresses.
The first or last 64 KBytes have been divided into
four additional blocks. The 16 KByte Boot Block
can be used for small initialization code to start the
microprocessor, the two 8 KByte Parameter
Blocks can be used for parameter storage and the
remaining 32K is a small Main Block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.
They allow simple conne ction to most microprocessors, often without additional logic.
The memory is offered TSOP48 (12 x 20mm) and
TFBGA48 (0.8mm pitch) packages. The memory
is supplied with all the bits erased (set to ’1’).
A0-A19
W
RP
BYTE
A0-A19Address Inputs
V
CC
20
E
G
M29W160ET
M29W160EB
V
SS
15
DQ0-DQ14
DQ15A–1
RB
AI06849B
DQ0-DQ7Data Inputs/Outputs
DQ8-DQ14Data Inputs/Outputs
DQ15A–1Data Input/Output or Address Input
E
G
W
RP
RB
BYTE
V
Figure 4. TFBGA Connections (Top view through package)
M29W160ET, M29W160EB
654321
A
B
C
D
E
F
G
H
A3
A4
A2
A1
A0
E
G
V
SS
A7
A17
A6
A5NC
DQ0
DQ8
DQ9
DQ1
RB
NC
A18
DQ2
DQ10
DQ11
DQ3
W
RP
NC
A19
DQ5
DQ12
V
CC
DQ4
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A13
A12
A14
A15
A16
BYTE
DQ15
A–1
V
SS
AI02985B
7/40
M29W160ET, M29W160EB
Figure 5. Block Addresses (x8)
M29W160ET
Top Boot Block Addresses (x8)
1FFFFFh
1FC000h
1FBFFFh
1FA000h
1F9FFFh
1F8000h
1F7FFFh
1F0000h
1EFFFFh
1E0000h
01FFFFh
010000h
00FFFFh
000000h
16 KByte
8 KByte
8 KByte
32 KByte
64 KByte
64 KByte
64 KByte
Total of 31
64 KByte Blocks
Bottom Boot Block Addresses (x8)
1FFFFFh
1F0000h
1EFFFFh
1E0000h
01FFFFh
010000h
00FFFFh
008000h
007FFFh
006000h
005FFFh
004000h
003FFFh
000000h
M29W160EB
64 KByte
64 KByte
64 KByte
32 KByte
8 KByte
8 KByte
16 KByte
Total of 31
64 KByte Blocks
Note: Also see Appendi x A, Tables 19 and 20 for a full l is t i ng of the Block A ddresses .
AI06851
8/40
Figure 6. Block Addresses (x16)
M29W160ET, M29W160EB
Top Boot Block Addresses (x16)
FFFFFh
FE000h
FDFFFh
FD000h
FCFFFh
FC000h
FBFFFh
F8000h
F7FFFh
F0000h
0FFFFh
08000h
07FFFh
00000h
M29W160ET
8 KWord
4 KWord
4 KWord
16 KWord
32 KWord
32 KWord
32 KWord
Total of 31
32 KWord Blocks
Bottom Boot Block Addresses (x16)
FFFFFh
F8000h
F7FFFh
F0000h
0FFFFh
08000h
07FFFh
04000h
03FFFh
03000h
02FFFh
02000h
01FFFh
00000h
M29W160EB
32 KWord
32 KWord
32 KWord
16 KWord
4 KWord
4 KWord
8 KWord
Total of 31
32 KWord Blocks
Note: Also see Appendi x A, Tables 19 and 20 for a full l is t i ng of the Block A ddresses .
AI06852
9/40
M29W160ET, M29W160EB
SIGNAL DESCRIPTIONS
See Figure 2, Logic Diagram, and Table 1, Sign al
Names, for a brief overview of the signals connected to this de vice.
Address Inputs (A0-A19). The Address Inputs
select the cell s in the memory arra y to access du ring Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the Program/Erase Controller.
Data Inputs/Outputs (DQ0-DQ7). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sent to the Command Interface of the Program/
Erase Controller.
Data Inputs/Outputs (DQ8-DQ14). The Data Inputs/Outputs output the data stored at the selected
address during a Bus Read operation when BYTE
is High, VIH. When BYTE is Low, VIL, these pins
are not used and are high impedance. During Bus
Write operations the Command Register does not
use these bits. When reading the S tatus Register
these bits should be ignored.
Data Input/Ou tput or Address Input (DQ15A-1).
When BYTE
Data Input/Output pin (as DQ8-DQ14). When
BYTE
pin; DQ15A–1 Low will select the LSB of the Word
on the other addresses, DQ15A–1 High will select
the MSB. Throughout the text consider references
to the Data Input/Output to include this pin when
BYTE
puts to include this pin when BYTE
when stated explicitly otherwise.
Chip Enable (E
the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is
High, V
Output Enable (G
trols the Bus Read operation of the memory.
Write Enable (W
the Bus Write operation of the memory’s Command Interf a ce .
Reset/Block Temporary Unprotect (RP
Reset/Block Temporary Unprotect pin can be
used to apply a Hardware Reset to the memory or
to temporarily unprotect all Blocks that have b een
protected.
A Hardware Reset is achieved by holding Reset/
Block Temporary Unprotect Low, V
. After Reset/Block Temporary Unprotect
t
PLPX
goes High, V
is High, VIH, this pin behaves as a
is Low, VIL, this pin behaves as an address
is High and ref erences to the Address In-
is Low except
). The Chip Enable, E, activates
, all other pins are ignored.
IH
). T he Output Enable, G, con-
). The Write Enable, W, controls
). The
, for at least
IL
, the memory will be ready for Bus
IH
Read and Bus Write operations after t
, whichever occurs last. See the Ready/Busy
t
RHEL
PHEL
or
Output section, Table 15 and Figure 14, Reset/
Temporary Unprotect AC Characteristics for more
details.
Holding RP
at VID will temporarily unprotect the
protected Blocks in the memory. Program and
Erase operations on all blocks will be possible.
The transition from V
PHPHH
.
t
Ready/Busy Output (RB
to VID must be slower than
IH
). The Ready/Busy pin
is an open-drain output that can be used to identify
when the device is performing a Program or Erase
operation. During Program or Erase operations
Ready/Busy is Low, V
. Ready/Busy is high-im-
OL
pedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy becomes high-impedance. See Tabl e 15 and Figure
14, Reset/Temporary Unprotect AC Characteristics.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE
). The
Byte/Word Organization Select pin is used to
switch between the 8-bit and 16-bit Bus modes of
the memory. When Byte/Word Organization Select is Low, V
it is High, V
Supply Voltage. The VCC Supply Voltage
V
CC
, the memory is in 8-bit mode, when
IL
, the memory is in 16-bit mode.
IH
supplies the power for all operations (Read, Program, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the L ockout Voltage,
. This prevents Bus Write operations from ac-
V
LKO
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memory contents being altered will be invalid.
A 0.1µF capacitor should be connected between
the V
Supply Voltage pin and the VSS Ground
CC
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during program and
erase operations, I
Ground. The VSS Ground is the reference for
V
SS
all voltage measurements. The two V
CC3
.
pins of the
SS
device must be connected to the system ground.
10/40
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Ou tput Disable, Standby and Automatic Standby. See
Tables 2 and 3, Bus Operat ions, for a summary.
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low sig nal, V
, to Chip Enable
IL
and Output Enable and keeping Write Enable
High, V
. The Data Inputs/Outputs will output the
IH
value, see Figure 11, Read Mode AC Waveforms,
and Table 12, Read AC Characteristics, for details
of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desire d address on t he Address Inputs. The Address Inputs are latc hed by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs a re latched by the Command Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output Enable must remain High, V
, during the whole Bus
IH
Write operation. See Figures 12 and 13, Write AC
Waveforms, and Tables 13 and 14, Write AC
Characteristics, for details of the timing requirements.
Output Disa bl e . The Data Inputs/Outputs are in
the high impedance s tate when Output Enable is
High, V
Standby. When Chip Enable is High, V
.
IH
, the
IH
memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-imped-
M29W160ET, M29W160EB
ance state. To reduce t he Supply Current to the
Standby Supply Current, I
be held within V
± 0.2V. For the Standby current
CC
level see Table 11, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, I
, for Program or Erase operations un-
CC3
til the operation completes.
Automatic Standby. If CMOS levels (V
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is reduced to the Standby Supply Current, I
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations. Additional bus operations can be performed to read the Electronic Signature and also to apply and remove Block
Protection. These bus operations are intended for
use by programming equipment and are not usually used in applications. They require V
applied to some pins.
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying t he signals
listed in Tables 2 and 3, Bus Operations.
Block Protection and Blocks Unprotection.
Each block can be separately protected against
accidental Program or Erase. Protected blocks
can be unprotected to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on programming equipment and the other for in-system
use. Block Protect and Blocks Unprotect operations are described in Appendix C.
, Chip Enable should
CC2
CC
CC2
± 0.2V)
. The
to be
ID
Table 2. Bus Operations, BYTE
OperationEGW
Bus Read
Bus Write
Output DisableX
Standby
Read Manufacturer
Code
Read Device Code
Note: X = VIL or VIH.
V
IL
V
IL
V
IH
V
IL
V
IL
= V
IL
Address Inputs
DQ15A–1, A0-A19
V
IL
V
IH
V
IH
XXXHi-ZHi-Z
V
IL
V
IL
V
Cell AddressHi-ZData Output
IH
V
Command AddressHi-ZData Input
IL
V
XHi-ZHi-Z
IH
A0 = VIL, A1 = VIL, A9 = VID,
V
IH
Others V
A0 = VIH, A1 = VIL, A9 = VID,
V
IH
Others V
IL
IL
or V
or V
IH
IH
Data Inputs/Outputs
DQ14-DQ8DQ7-DQ0
Hi-Z20h
Hi-Z
C4h (M29W160ET)
49h (M29W160EB)
11/40
M29W160ET, M29W160EB
Table 3. Bus Operations, BYTE = V
OperationEGW
Bus Read
Bus Write
Output DisableX
Standby
Read Manufacturer
Code
Read Device Code
Note: X = VIL or VIH.
V
IL
V
IL
V
IH
V
IL
V
IL
IH
V
IL
V
IH
V
IH
XXXHi-Z
V
IL
V
IL
V
Cell AddressData Output
IH
V
Command AddressData Input
IL
V
XHi-Z
IH
A0 = VIL, A1 = VIL, A9 = VID,
V
IH
Others V
A0 = VIH, A1 = VIL, A9 = VID,
V
IH
Others V
COMMAND INTERFACE
All Bus Write operations t o the me mory are in terpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus
Write operations will result in the memory returning to Read mode. The long command sequences
are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 4, or 5, de pending on
the configuration that is being used, for a summary
of the commands.
Read/Reset Command. The Read/Reset command returns the memory to its Read mode where
it behaves like a ROM or EPROM, unless otherwise stated. It also resets the errors in th e Status
Register. Either one or three Bus Write operations
can be used to issue the Read/Reset command.
The Read/Reset Command can be issued, between Bus Write cycles before the start of a program or erase operation, to return the device to
read mode. Once the program or erase operation
has started the Read/Reset command is no longer
accepted. The Read/Reset command will not
abort an Erase operation when issued while in
Erase Suspend.
Auto Select Command. The Auto Select command is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are required to issue the Auto Select command. Once
the Auto Select comma nd is issued the memory
remains in Auto Select mode until a Read/Reset
command is issued. Read CFI Query and Read/
Reset commands are accepted in Auto Select
mode, all other commands are ignored.
Address Inputs
A0-A19
or V
IL
IH
or V
IL
IH
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
0020h
22C4h (M29W160ET)
2249h (M29W160EB)
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = V
may be set to either V
and A1 = VIL. The other address bits
IL
or VIH. The Manufa cturer
IL
Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read
operation with A0 = V
address bits may be set to e ither V
and A1 = VIL. The other
IH
or VIH. The
IL
Device Code for the M29W160ET is 22C4h and
for the M29W160EB is 2249h.
The B lock Prot ection S tatus of each block can be
read using a Bus Read operation with A0 = V
A1 = V
, and A 12 - A19 spec ify i ng the ad dress of
IH
the bl ock. T he oth er addr ess bit s may b e set t o either V
or VIH. If the ad dress ed bloc k is pro tecte d
IL
then 01h is output on Data Inputs/Outputs DQ0DQ7, otherwise 00h is output.
Program Command. The Program command
can be used to program a value to one address in
the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data, and starts
the Program/Erase Controller.
If the address falls in a pro tected block then the
Program command is ignored, the data remains
unchanged. The Status Register is never read and
no error condition is given.
During the program operat ion the memo ry will ignore all commands. I t is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 6. Bus Read operations during the program o peration will output
the Status Register on the Data Inputs/Outputs.
See the section on the S tatus Register for more
details.
After the program operation has completed the
memory returns to the Read mode, unless an error
,
IL
12/40
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