ST M29W160DT, M29W160DB User Manual

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SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 70ns
PROGRAMMING TIME
–10µs per Byte/Word typical
35 MEMORYBLOCKS
– 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Program and Erase algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCKBYPASS PROGRAM COMMAND
– FasterProduction/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
SECURITY MEMORY BLOCK
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h – Top Device Code M29W160DT: 22C4h – Bottom Device Code M29W160DB: 2249h
M29W160DT
M29W160DB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
3V Supply Flash Memory
PRELIMINARY DATA
Figure 1. Packages
44
1
TSOP48 (N)
12 x 20mm
LFBGA48 (ZA)
8 x 6 solder balls
SO44 (M)
FBGA
January 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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M29W160DT, M29W160DB
TABLE OF CONTENTS
SUMMARY DESCRIPTION. . . . . . . . ...................................................5
Logic Diagram . .................................................................5
Signal Names . .................................................................5
TSOP Connections . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ............6
SO Connections . . . . . . . . . .......................................................6
LFBGA Connections (Top view through package) . . . . . . . ...............................7
Table 2. Top Boot Block Addresses, M29W160DT. . ....................................8
Table 3. Bottom Boot Block Addresses, M29W160DB . . . . . . . . . . . . . . . . . . . . ...............8
SIGNAL DESCRIPTIONS . . ..........................................................9
Address Inputs (A0-A19). . . . . . . ...................................................9
Data Inputs/Outputs (DQ0-DQ7). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Data Inputs/Outputs (DQ8-DQ14). . . . . . . . . . . . . . .....................................9
Data Input/Output or Address Input (DQ15A-1). . . . .....................................9
Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...............................9
Output Enable (G). . . . . . . . . . . . . . . . ...............................................9
Write Enable (W). . . . . . . . . . . . . ...................................................9
Reset/Block Temporary Unprotect (RP).. . ............................................9
Ready/Busy Output (RB). . . . . . . ...................................................9
Byte/Word Organization Select (BYTE). . . . . . . . . ......................................9
Supply Voltage. . . . . . . . . . . . . . . . . . ............................................9
V
CC
Vss Ground.. . ..................................................................9
BUS OPERATIONS. . . . . . . . . . . . . . ..................................................10
Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . ...........................................10
Bus Write. ....................................................................10
Output Disable. . . ..............................................................10
Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..............................10
Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .................................10
Special Bus Operations. .........................................................10
Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Block Protection and Blocks Unprotection. ...........................................10
Table 4. Bus Operations, BYTE = VIL...............................................10
Table 5. Bus Operations, BYTE = VIH...............................................11
COMMAND INTERFACE . . . . . . . . . . . . . . . . ...........................................11
Read/Reset Command.. . . . . . . . . . . . . . . . . . . . . . ....................................11
Auto Select Command. . . . .......................................................11
Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . ...................................11
Unlock Bypass Command. . . . . . ..................................................12
Unlock Bypass Program Command. . . . . . . . . . . . . . . . .................................12
Unlock Bypass Reset Command. . . . . . . . . . . . . . . . . . .................................12
Chip Erase Command. . . . . ......................................................12
Block Erase Command.. .........................................................12
2/29
M29W160DT, M29W160DB
Erase Suspend Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .......................12
Erase Resume Command. . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...........13
Security Data Command. . . . . . . . . . . . . . ...........................................13
Table 6. Security Memory Block Addresses . . . .......................................13
Table 7. Commands, 16-bit mode, BYTE = VIH.......................................14
Table 8. Commands, 8-bit mode, BYTE = VIL.........................................15
Table 9. Program, Erase Times and Program, Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 16
STATUS REGISTER . . . . . . . . . . . . . ..................................................16
Data Polling Bit (DQ7). . . . . ......................................................16
Toggle Bit (DQ6).. . . . . . .........................................................16
Error Bit (DQ5). . . ..............................................................16
Erase Timer Bit (DQ3). . . . . . . . . . . . . . . . . . . . . . . . . . .................................17
Alternative Toggle Bit (DQ2).. . . ...................................................17
Table 10. Status Register Bits. . . . . . . . . . . . . . . . . . ...................................17
Figure 6. Data Polling Flowchart . ..................................................18
Figure 7. Data Toggle Flowchart. . . . .. . . ...........................................18
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . ...........................................18
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . .................................18
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . ..............................19
Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
AC Measurement I/O Waveform . ..................................................19
AC Measurement Load Circuit . . ..................................................19
Capacitance. . . . . . . . . . . . .......................................................19
DC Characteristics. . . . . . . . . . . . . . . . . . . ...........................................20
Read Mode AC Waveforms. ......................................................21
Read AC Characteristics .........................................................21
Write AC Waveforms, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...........22
Write AC Characteristics, Write Enable Controlled . . ...................................22
Write AC Waveforms, Chip Enable Controlled . . . . ....................................23
Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . .......................23
Reset/Block Temporary Unprotect AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . ..............24
Reset/Block Temporary Unprotect AC Characteristics . . . . . . . . . . . . . . . . ..................24
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Outline . . . . . . ...........25
TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20mm, Package Mechanical Data . . . . . . . . . 25
SO44 - 44 lead Plastic Small Outline, 525 mils body width, Package Outline . . . . . . . . . . . . ....26
LFBGA48 - 8 x 6 balls, 0.80 mm pitch, Bottom View Package Outline......................27
LFBGA48 - 8 x 6 balls, 0.80mm pitch, Package Mechanical Data . . . ......................27
PART NUMBERING . . . . . . . . . ......................................................28
Ordering Information Scheme . . . . . . . . . . . . . . . . . ....................................28
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M29W160DT, M29W160DB
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . ....................................28
Document Revision History .......................................................28
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SUMMARY DESCRIPTION
The M29W160D is a 16 Mbit (2Mb x8 or 1Mbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per­formed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are writ­ten to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process ofprogramming or erasing the memory by taking care of all of the specialoperations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified. The
M29W160DT, M29W160DB
command set required to control the memory is consistent with JEDEC standards.
The blocks in the memory are asymmetrically ar­ranged,see Tables2 and3, BlockAddresses. The first or last 64 Kbytes have been divided into four additional blocks. The 16 Kbyte Boot Block can be used for smallinitialization code to startthe micro­processor, the two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining 32K is a small Main Block where the application may be stored.
Chip Enable, Output Enableand Write Enable sig­nals control the bus operation of the memory. They allow simple connection to most micropro­cessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm), SO44 and LFBGA48 (0.8mm pitch) packages and it is supplied with all the bits erased (set to ’1’).
Figure 2. Logic Diagram
V
CC
20
A0-A19
W
E G
RP
Note: RB not available on SO44 package.
M29W160DT M29W160DB
V
SS
15
DQ0-DQ14
DQ15A–1 BYTE RB
AI03843
Table 1. Signal Names
A0-A19 Address Inputs DQ0-DQ7 Data Inputs/Outputs DQ8-DQ14 Data Inputs/Outputs DQ15A–1 Data Input/Output or Address Input E Chip Enable G Output Enable W Write Enable RP Reset/Block Temporary Unprotect
RB
BYTE Byte/Word Organization Select V
CC
V
SS
NC Not Connected Internally DU Don’t Use as internally connected
Ready/Busy Output (Not available on SO44 package)
Supply Voltage Ground
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M29W160DT, M29W160DB
Figure 3. TSOP Connections Figure 4. SO Connections
A15 A14 A13 A12 A11 A10 DQ14
A19
NC
RP NC NC
RB
A18 A17
1
A9 A8
W
12
M29W160DT M29W160DB
13
A7 A6 A5 A4 A3 A2 A1
24 25
AI03844
48
37 36
A16 BYTE V
SS
DQ15A–1 DQ7
DQ6 DQ13 DQ5 DQ12 DQ4 V
CC
DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G V
SS
E A0
RP A18 A17 A8
A7 A6 A5 A4 A3 A2 A1 A0
V
SS
DQ0 DQ8
1 2 3 4 5 6 7 8 9 10 11
M29W160DT
E
M29W160DB
12 13
G
14 15 16 17DQ1
DQ9
18 19
DQ10
DQ3
20 21
DQ11
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 2322
AI03845
W A19
A9 A10 A11 A12 A13 A14 A15 A16 BYTE V
SS
DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5DQ2 DQ12 DQ4 V
CC
6/29
Figure 5. LFBGA Connections (Top view through package)
M29W160DT, M29W160DB
654321
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
V
A4
A3
A1
A0
A2
E
G
SS
A
B
C
D
E
F
G
H
RB
DU
A18
DU
DQ2
DQ10
DQ11
DQ3
W
RP
DU
A19
DQ5
DQ12
V
CC
DQ4
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A13
A12
A14
A15
A16
BYTE
DQ15
A–1
V
SS
AI02985B
7/29
M29W160DT, M29W160DB
Table 2. Top Boot Block Addresses, M29W160DT
Size
#
(Kby t es)
34 16 1FC000h-1FFFFFh FE000h-FFFFFh 33 8 1FA000h-1FBFFFh FD000h-FDFFFh 32 8 1F8000h-1F9FFFh FC000h-FCFFFh 31 32 1F0000h-1F7FFFh F8000h-FBFFFh 30 64 1E0000h-1EFFFFh F0000h-F7FFFh 29 64 1D0000h-1DFFFFh E8000h-EFFFFh 28 64 1C0000h-1CFFFFh E0000h-E7FFFh 27 64 1B0000h-1BFFFFh D8000h-DFFFFh 26 64 1A0000h-1AFFFFh D0000h-D7FFFh 25 64 190000h-19FFFFh C8000h-CFFFFh 24 64 180000h-18FFFFh C0000h-C7FFFh 23 64 170000h-17FFFFh B8000h-BFFFFh 22 64 160000h-16FFFFh B0000h-B7FFFh 21 64 150000h-15FFFFh A8000h-AFFFFh 20 64 140000h-14FFFFh A0000h-A7FFFh 19 64 130000h-13FFFFh 98000h-9FFFFh 18 64 120000h-12FFFFh 90000h-97FFFh 17 64 110000h-11FFFFh 88000h-8FFFFh 16 64 100000h-10FFFFh 80000h-87FFFh 15 64 0F0000h-0FFFFFh 78000h-7FFFFh 14 64 0E0000h-0EFFFFh 70000h-77FFFh 13 64 0D0000h-0DFFFFh 68000h-6FFFFh 12 64 0C0000h-0CFFFFh 60000h-67FFFh 11 64 0B0000h-0BFFFFh 58000h-5FFFFh 10 64 0A0000h-0AFFFFh 50000h-57FFFh
9 64 090000h-09FFFFh 48000h-4FFFFh 8 64 080000h-08FFFFh 40000h-47FFFh 7 64 070000h-07FFFFh 38000h-3FFFFh 6 64 060000h-06FFFFh 30000h-37FFFh 5 64 050000h-05FFFFh 28000h-2FFFFh 4 64 040000h-04FFFFh 20000h-27FFFh 3 64 030000h-03FFFFh 18000h-1FFFFh 2 64 020000h-02FFFFh 10000h-17FFFh 1 64 010000h-01FFFFh 08000h-0FFFFh 0 64 000000h-00FFFFh 00000h-07FFFh
AddressRange
(x8)
Addres sRange
(x16)
Table 3. Bottom Boot Block Addresses, M29W160DB
Size
#
(Kbytes)
34 64 1F0000h-1FFFFFh F8000h-FFFFFh 33 64 1E0000h-1EFFFFh F0000h-F7FFFh 32 64 1D0000h-1DFFFFh E8000h-EFFFFh 31 64 1C0000h-1CFFFFh E0000h-E7FFFh 30 64 1B0000h-1BFFFFh D8000h-DFFFFh 29 64 1A0000h-1AFFFFh D0000h-D7FFFh 28 64 190000h-19FFFFh C8000h-CFFFFh 27 64 180000h-18FFFFh C0000h-C7FFFh 26 64 170000h-17FFFFh B8000h-BFFFFh 25 64 160000h-16FFFFh B0000h-B7FFFh 24 64 150000h-15FFFFh A8000h-AFFFFh 23 64 140000h-14FFFFh A0000h-A7FFFh 22 64 130000h-13FFFFh 98000h-9FFFFh 21 64 120000h-12FFFFh 90000h-97FFFh 20 64 110000h-11FFFFh 88000h-8FFFFh 19 64 100000h-10FFFFh 80000h-87FFFh 18 64 0F0000h-0FFFFFh 78000h-7FFFFh 17 64 0E0000h-0EFFFFh 70000h-77FFFh 16 64 0D0000h-0DFFFFh 68000h-6FFFFh 15 64 0C0000h-0CFFFFh 60000h-67FFFh 14 64 0B0000h-0BFFFFh 58000h-5FFFFh 13 64 0A0000h-0AFFFFh 50000h-57FFFh 12 64 090000h-09FFFFh 48000h-4FFFFh 11 64 080000h-08FFFFh 40000h-47FFFh 10 64 070000h-07FFFFh 38000h-3FFFFh
9 64 060000h-06FFFFh 30000h-37FFFh 8 64 050000h-05FFFFh 28000h-2FFFFh 7 64 040000h-04FFFFh 20000h-27FFFh 6 64 030000h-03FFFFh 18000h-1FFFFh 5 64 020000h-02FFFFh 10000h-17FFFh 4 64 010000h-01FFFFh 08000h-0FFFFh 3 32 008000h-00FFFFh 04000h-07FFFh 2 8 006000h-007FFFh 03000h-03FFFh 1 8 004000h-005FFFh 02000h-02FFFh 0 16 000000h-003FFFh 00000h-01FFFh
Address Range
(x8)
Address Range
(x16)
8/29
SIGNAL DESCRIPTIONS
See Figure 2, Logic Diagram, and Table 1, Signal Names, fora brief overview ofthesignals connect­ed to this device.
Address Inputs (A0-A19).
The Address Inputs select the cells in the memoryarray to access dur­ing Bus Read operations. During BusWrite opera­tions they control the commands sent to the Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7).
The Data In­puts/Outputs outputthe datastored at the selected address during a Bus Readoperation. DuringBus Write operations they represent the commands sent tothe Command Interface of theinternal state machine.
Data Inputs/Outputs (DQ8-DQ14).
The Data In­puts/Outputs outputthe datastored at the selected address during a Bus Read operation when BYTE is High, V
. When BYTE is Low, VIL, these pins
IH
are not used and arehigh impedance. During Bus Write operations the Command Register does not use these bits. When reading the Status Register these bits should be ignored.
Data Input/Output or Address Input (DQ15A-1).
When BYTE is High, VIH, this pin behaves as a Data Input/Output pin (as DQ8-DQ14). When BYTE is Low, VIL, this pin behaves asan address pin; DQ15A–1 Low willselect the LSB of the Word on the other addresses, DQ15A–1 Highwill select the MSB. Throughout the text consider references to the Data Input/Output to include this pin when BYTE is High and references to the Address In­puts to include this pin when BYTE is Low except when stated explicitly otherwise.
Chip Enable (E). The Chip Enable, E, activates the memory,allowing BusRead and Bus Writeop­erations to be performed. When Chip Enable is High, V
, all other pins are ignored.
IH
Output Enable (G). The Output Enable, G, con­trols the Bus Read operation of the memory.
Write Enable (W). The Write Enable, W, controls the Bus Write operation of the memory’s Com­mand Interface.
Reset/Block Temporary Unprotect (RP). The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Resetto the memory or to temporarily unprotect all Blocks that have been protected.
A Hardware Reset is achieved by holding Reset/ Block Temporary Unprotect Low, V t
. After Reset/Block Temporary Unprotect
PLPX
, for at least
IL
goes High, VIH, the memory will be ready for Bus Read and Bus Write operations after t
PHEL
or
M29W160DT, M29W160DB
, whicheveroccurs last. See the Ready/Busy
t
RHEL
Output section, Table 18 and Figure 13, Reset/ Temporary Unprotect AC Characteristics for more details.
Holding RP at VIDwill temporarily unprotect the protected Blocks in the memory. Program and Erase operations on all blocks will be possible. The transition from VIHtoVIDmustbe slower than t
Ready/Busy Output (RB).
is anopen-drain output that canbe used toidentify when the memory array can be read. Ready/Busy is high-impedance during Read mode,Auto Select mode and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy be­comes high-impedance. See Table 18 and Figure 13, Reset/Temporary Unprotect AC Characteris­tics.
During Program or Erase operations Ready/Busy is Low, VOL. Ready/Busy will remain Low during Read/Reset commands or Hardware Resets until the memory is ready to enter Read mode.
The use ofan open-drain output allowsthe Ready/ Busy pins from several memories to be connected to asingle pull-up resistor. A Low will then indicate that one, or more, of the memories is busy.
Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus modes of the memory. When Byte/Word Organization Se­lect isLow, V it is High, VIH, the memory is in 16-bit mode.
V
supplies the power for all operations (Read, Pro­gram, Erase etc.).
The Command Interface is disabledwhen the V Supply Voltage is less than the Lockout Voltage, V cidentally damaging the data during power up, power down and power surges. If the Program/ Erase Controller is programming orerasing during this time thenthe operation aborts and the memo­ry contents being altered will be invalid.
A 0.1µF capacitor should be connected between the VCCSupply Voltage pin and the VSSGround pin to decouplethe current surges from the power supply. The PCB track widthsmust be sufficient to carry the currents required during program and erase operations, I
Vss Ground. The VSSGround is the reference for all voltage measurements.
.
PHPHH
The Ready/Busy pin
, the memory is in 8-bit mode, when
IL
Supply Voltage. The VCCSupply Voltage
CC
. Thisprevents Bus Write operationsfrom ac-
LKO
.
CC3
CC
9/29
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