ST M29F200T, M29F200B User Manual

查询M295V200B-120M1R供应商

2 Mbit (256Kb x8 or 128Kb x16, Boot Block)

5V±10% SUPPLYVOLTAGEforPROGRAM, ERASEand READOPERATIONS

FASTACCESSTIME: 55ns FASTPROGRAMMING TIME –10µs by Byte / 16µs byWord typical PROGRAM/ERASECONTROLLER(P/E.C.) – ProgramByte-by-Byteor Word-by-Word – StatusRegister bits and Ready/BusyOutput MEMORYBLOCKS – BootBlock (Topor Bottomlocation) – Parameterand Main blocks BLOCK, MULTI-BLOCKand CHIP ERASE MULTI-BLOCKPROTECTION/TEMPORARY

UNPROTECTIONMODES ERASESUSPEND and RESUMEMODES – Readand Program anotherBlock during

Erase Suspend LOW POWER CONSUMPTION – Stand-byand AutomaticStand-by 100,000 PROGRAM/ERASECYCLESper

BLOCK 20 YEARSDATARETENTION – Defectivitybelow 1ppm/year ELECTRONICSIGNATURE – ManufacturerCode:0020h – Device Code, M29F200T:00D3h – Device Code, M29F200B:00D4h

DESCRIPTION

The M29F200 is a non-volatile memory that may beerasedelectricallyat theblock or chipleveland programmedin-systemona Byte-by-Byteor Wordby-Word basis using only a single 5V V For Program and Erase operations the necessary high voltages are generatedinternally. The device can also be programmed in standard programmers.

Thearraymatrixorganisationallowseach blockto be erased and reprogrammed without affecting otherblocks. Blockscan be protectedagainst programing and erase on programming equipment, and temporarily unprotected to make changes in the application.

supply.

M29F200T

M29F200B

Single Supply Flash Memory

12 x 20 mm

Figure1. LogicDiagram

A0-A16

M29F200T M29F200B

SO44 (M)TSOP48 (N)

DQ0-DQ14

DQ15A–1 BYTE RB

AI01986

July 1998 1/33

M29F200T, M29F200B

Figure2A. TSOPPin Connections

A15 A14 A13 A12 A11 A10 DQ14

A8 NC NC

W RP NC NC RB NC NC

A7 A6 A5 A4 A3 A2 A1

M29F200T

M29F200B

(Normal)

24 25

37 36

AI01987

A16 BYTE V

DQ15A–1 DQ7

DQ6 DQ13 DQ5 DQ12 DQ4 V

DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 G V

E A0

Figure2B. TSOPReverse Pin Connections

A16

BYTE

DQ15A–1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4 V

DQ11

DQ3

DQ10

DQ2 DQ9 DQ1 DQ8 DQ0

M29F200T

M29F200B

(Reverse)

24 25

AI01988

37 36

A15 A14 A13 A12 A11 A10 A9 A8 NC NC W RP NC NC RB NC NC A7 A6 A5 A4 A3 A2 A1

Warning: NC = Not Connected. Warning: NC = Not Connected.

Figure2C. SO Pin Connections

Table 1. Signal Names

A0-A16 Address Inputs

NC RP

1 2 3

NC A8

4 5

A5 A4

M29F200T M29F200B

12 13 14 15 16 17DQ1 18 19 20 21

DQ0

DQ8

DQ9

DQ10

DQ3

DQ11

44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 2322

AI01989

WRB

A9 A10 A11 A12 A13 A14 A15 A16 BYTE V

DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5DQ2 DQ12 DQ4 V

DQ0-DQ7 Data Input/Outputs, Command Inputs DQ8-DQ14 Data Input/Outputs DQ15A–1 Data Input/Output or Address Input E Chip Enable G Output Enable W Write Enable RP Reset / Block TemporaryUnprotect RB Ready/Busy Output BYTE Byte/Word Organisation V

Supply Voltage Ground

Warning: NC = Not Connected.

2/33

M29F200T, M29F200B

Table2. Absolute Maximum Ratings

Symbol Parameter Value Unit

BIAS

STG

(2)

(A9, E, G, RP)

Notes: 1. Except for therating ”Operating Temperature Range”, stressesabove those listedin theTable ”AbsoluteMaximum Ratings”

may cause permanent damage to thedevice. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operatingsections of this specification is not implied.Exposure to Absolute Maximum Rating conditions for extended periods may affectdevice reliability.Refer also to the STMicroelectronics SURE Program and other relevant quality documents.

2. Minimum Voltage may undershootto–2V during transitionand for less than 20ns.

3. Depends on range.

Ambient Operating Temperature Temperature Under Bias –50 to 125 Storage Temperature –65 to 150 Input or Output Voltages –0.6to 7 V Supply Voltage –0.6to 7 V

(2)

A9, E, G, RP Voltage –0.6to 13.5 V

DESCRIPTION(Cont’d) Instructionsfor Read/Reset, Auto Select for read-

ing the Electronic Signature or Block Protection status,Programming,Blockand ChipErase,Erase Suspend and Resume are written to the device in cyclesofcommandstoa CommandInterfaceusing standardmicroprocessorwrite timings.

Thedevice is offered in TSOP48(12 x20mm)and SO44packages.Both normal and reversepinouts are available for the TSOP48package.

Organisation

TheM29F200is organisedas256Kx8or128Kx16 bitsselectableby the BYTEsignal.When BYTEis Low the Byte-wide x8 organisationis selected and the address lines are DQ15A–1 and A0-A16. The Data Input/Output signal DQ15A–1 acts as address line A–1 which selects the lower or upper Byteof the memory word for output on DQ0-DQ7, DQ8-DQ14 remain at High impedance. When BYTEis Highthe memoryuses the addressinputs A0-A16 and the Data Input/Outputs DQ0-DQ15. Memory control is provided by Chip Enable E, OutputEnable G and Write Enable W inputs.

AReset/BlockTemporaryUnprotection RPtri-level input providesa hardware reset when pulled Low, andwhenheldHigh(atV

)temporarily unprotects

blocks previously protected allowing them to be programedanderased.EraseandProgramoperations are controlledby an internal Program/Erase Controller(P/E.C.).StatusRegister data outputon DQ7providesa Data Pollingsignal, and DQ6 and DQ2provideTogglesignals to indicatethe state of

(1)

(3)

–40 to 125

the P/E.C operations. A Ready/Busy RB output indicatesthe completionof theinternalalgorithms.

MemoryBlocks

Thedevicesfeatureasymmetrically blockedarchitectureprovidingsystemmemory integration.Both M29F200Tand M29F200B devices have anarray of 7 blocks, one Boot Block of 16 KBytes or 8 KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes or 16 KWordsand threeMain Blocksof 64 KBytesor 32 KWords.TheM29F200Thas the Boot Block at the top of the memory address spa ce and the M29F200B locates the Boot Block starting at the bottom. The memory maps are showed in Figure

3. Each block can be erasedseparately,any combination of blocks can be specified for multi-block eraseor the entirechipmay beerased. TheErase operations are managed automatically by the P/E.C. The block erase operation can be suspended in order to read from or program to any blocknot being ersased, and then resumed.

Block protection provides additionaldata security. Each block can be separatelyprotected or unprotectedagainst Program or Erase on programming equipment.All previously protected blocks can be temporarilyunprotectedin the application.

Bus Operations

The following operationscan be performed using theappropriatebus cycles:Read(Array,Electronic Signature, Block Protection Status), Write command, Output Disable,Standby,Reset, Block Protection, Unprotection, Protection Verify, Unprotection Verify and Block Temporary Unprotection.See Tables4 and 5.

3/33

M29F200T, M29F200B

Figure3. MemoryMap and Block Address Table(x8)

M29F200B

64K MAIN BLOCK

32K MAIN BLOCK

8K PARAMETER BLOCK

16K BOOT BLOCK

AI01990

3FFFFh 3C000h

3BFFFh

3A000h

39FFFh

38000h

37FFFh

30000h

2FFFFh

20000h

1FFFFh

10000h

0FFFFh

00000h

M29F200T

16K BOOTBLOCK

8K PARAMETER BLOCK

32K MAIN BLOCK

64K MAIN BLOCK

3FFFFh

30000h

2FFFFh

20000h

1FFFFh

10000h

0FFFFh

08000h

07FFFh

06000h

05FFFh

04000h

03FFFh

00000h

Table3A. M29F200TBlock Address Table

Address Range (x8) Address Range (x16) A16 A15 A14 A13 A12

00000h-0FFFFh 00000h-07FFFh 0 0 X X X 10000h-1FFFFh 08000h-0FFFFh 0 1 X X X 20000h-2FFFFh 10000h-17FFFh 1 0 X X X 30000h-37FFFh 18000h-1BFFFh 1 1 0 X X

38000h-39FFFh 1C000h-1CFFFh 11100 3A000h-3BFFFh 1D000h-1DFFFh 11101 3C000h-3FFFFh 1E000h-1FFFFh 1111X

Table3B. M29F200BBlock AddressTable

Address Range (x8) Address Range (x16) A16 A15 A14 A13 A12

00000h-03FFFh 00000h-01FFFh 0000X

04000h-05FFFh 02000h-02FFFh 00010

06000h-07FFFh 03000h-03FFFh 00011

08000h-0FFFFh 04000h-07FFFh 0 0 1 X X

10000h-1FFFFh 08000h-0FFFFh 0 1 X X X

20000h-2FFFFh 10000h-17FFFh 1 0 X X X

30000h-3FFFFh 18000h-1FFFFh 1 1 X X X

4/33

M29F200T, M29F200B

CommandInterface

Instructions,made up of commandswritten in cycles,can be givento theProgram/EraseController through a Command Interface (C.I.). For added dataprotection,program or eraseexecutionstarts after4 or 6 cycles.The first,second,fourthandfifth cycles are used to input Coded cycles to the C.I. This Coded sequence is the same for all Program/Erase Controller instructions. The ’Command’itself and itsconfirmation,when applicable, are given on the third, fourth or sixth cycles. Any incorrectcommand or any impropercommand sequencewill resetthe deviceto ReadArray mode.

Instructions

Seven instructions are defined to perform Read Array,AutoSelect(to readthe ElectronicSignature or BlockProtectionStatus),Program,Block Erase, Chip Erase, Erase Suspend and Erase Resume. The internal P/E.C. automatically handles all timing and verification of the Program and Erase operations.The Status Register Data Polling, Toggle, Error bits and the RB output may be read at anytime, duringprogrammingor erase, to monitor the progress of the operation.

Instructionsare composedof upto six cycles. The first two cycles input a Coded sequence to the CommandInterfacewhich iscommontoall instructions (see Table 8). The third cycle inputs the instruction set-up command. Subsequent cycles outputthe addressed data,ElectronicSignatureor Block Protection Status for Read operations. In orderto giveadditionaldataprotection,the instructionsfor Programand Blockor Chip Eraserequire furthercommandinputs.ForaPrograminstruction, the fourth command cycle inputs the addressand data to be programmed. For an Erase instruction (Block or Chip), the fourth and fifth cycles input a furtherCoded sequence before the Erase confirm commandon thesixth cycle. Erasure of a memory blockmaybesuspended,inordertoreaddatafrom anotherblock or to program data inanotherblock, and then resumed.

When power is first applied or if V

, the command interface is reset to Read

LKO

falls below

Array.

SIGNALDESCRIPTIONS

See Figure 1 and Table1. AddressInputs (A0-A16).The addressinputs for

thememoryarrayarelatchedduringa write operation on the falling edge of Chip Enable E or Write EnableW. In Word-wide organisationthe address lines a re A0-A16, in Byte-wide organisation DQ15A–1acts as an additional LSB address line.

WhenA9 is raisedto V

, eithera Read Electronic

Signature Manufacturer or Device Code, Block Protection Status or a Write Block Protection or Block Unprotection is enabled depending on the combinationof levelson A0,A1,A6, A12 and A15.

Data Input/Outputs (DQ0-DQ7). These Inputs/Outputsare used in theByte-wideand Wordwide organisations. The input is data to be programmed in the memory array or a command to be written to the C.I. Both are latched on the rising edge of Chip Enable E or Write Enable W. The output is data from the Memory Array, the Electronic Signature Manufacturer or Device codes, the Block Protection Status or the Status registerData Polling bitDQ7, the ToggleBits DQ6 and DQ2, the Error bit DQ5or the EraseTimer bit DQ3. Outputs are valid when Chip Enable E and Output Enable G are active. The output is high impedance when the chip is deselected or the outputsaredisabledandwhenRPis at aLowlevel.

Data Input/Outputs (DQ8-DQ14and DQ15A–1).

These Inputs/Outputsare additionally used in the Word-wideorganisation.WhenBYTEis HighDQ8DQ14 and DQ15A–1 act as the MSB of the Data Inputor Output, functioningas described for DQ0DQ7 above, and DQ8-DQ15 are ’don’t care’ for commandinputs or statusoutputs. When BYTEis Low,DQ8-DQ14are highimpedance,DQ15A–1is theAddress A–1 input.

Chip Enable (E). The Chip Enable input activates the memory control logic, input buffers, decoders andsenseamplifiers.E Highdeselectsthememory andreducesthepower consumptiontothestandby level. E can also be used to control writing to the commandregister and to the memory array,while Wremainsat a low level.TheChip Enablemustbe forcedto V

duringthe Block Unprotectionopera-

tion. OutputEnable (G). The Output Enable gates the

outputs through the data buffers during a read operation. When G is High the outputs are High impedance. G must be forced to V

level during

BlockProtectionand Unprotection operations. WriteEnable(W). This inputcontrols writingto the

CommandRegisterandAddressandDatalatches. Byte/Word Organization Select (BYTE). The

BYTEinput selects the outputconfigurationforthe device: Byte-wide (x8) mode or Word-wide (x16) mode. When BYTEis Low,the Byte-widemode is selectedand the data is read and programmedon DQ0-DQ7. In this mode, DQ8-DQ14 are at high impedance and DQ15A–1 is the LSB address. When BYTE is High, the Word-wide mode is selected and the data is read and programmed on DQ0-DQ15.

5/33

M29F200T, M29F200B

Ready/Busy Output (RB). Ready/Busy is an

open-drainoutputandgivestheinternalstateof the P/E.C. of the device. When RB is Low, the device is Busy with a Program or Erase operation and it will not accept any additional program or erase instructionsexcept the Erase Suspendinstruction. WhenRBis High,the deviceis readyforanyRead, Program or Erase operation. The RB will also be Highwhen the memoryis put in Erase Suspendor Standbymodes.

Reset/Block Temporary Unprotect Input (RP).

The RP Input provides hardware reset and protected block(s) temporary unprotection functions. Reset of the memoryis acheived by pulling RP to

for at least 500ns. When the reset pulse is

given,ifthememoryis in Read or Standbymodes, it will be available for new operationsin 50ns after the rising edge of RP. If the memory is in Erase, Erase Suspend or Program modes the reset will take 10µs during which the RB signal will be held

.Theendof thememoryresetwillbeindicated

atV

by the rising edge of RB. Ahardware reset during anEraseor Programoperationwillcorruptthe data beingprogrammedor the sector(s)being erased.

Temporaryblock unprotection is made by holding RP at V

. In this condition previously protected

blockscan be programmed or erased. The transitionof RP from V When RP is returned from V

toVIDmust slowerthan500ns.

to VIHall blocks

temporarilyunprotectedwill be again protected.

Supply Voltage. The power supply for all

operations(Read, Programand Erase).

Ground. VSSis the reference for all voltage

measurements.

DEVICEOPERATIONS

See Tables 4, 5 and 6. Read. Read operations are used to output the

contents of the Memory Array, the ElectronicSignature,theStatusRegisteror the BlockProtection Status.Both Chip Enable E and Output Enable G must be low in order to read the output of the memory.

Write.Writeoperationsareused to giveInstruction Commandsto thememoryor tolatch input datato beprogrammed.Awrite operationisinitiatedwhen Chip Enable E is Low and Write Enable W is Low withOutput Enable G High.Addresses are latched onthe fallingedge ofWorEwhicheveroccurslast. CommandsandInputDataarelatchedontherising edgeof W or E whicheveroccurs first.

OutputDisable.Thedata outputsare high impedancewhen the OutputEnable G is High with Write EnableW High.

Standby. The memory is in standby when Chip EnableE is High and the P/E.C. is idle. The power consumption is reduced to the standby level and the outputs are high impedance, independent of the Output Enable G or Write Enable W inputs.

Automatic Standby. After 150ns of bus inactivity andwhen CMOSlevels are drivingthe addresses, the chip automatically enters a pseudo-standby modewhere consumptionis reducedto the CMOS standbyvalue, while outputsstill drive the bus.

ElectronicSignature. Two codes identifying the manufacturer andthe devicecan be read fromthe memory. The manufacturer’s code for STMicroelectronicsis20h,thedevicecodeisD3hforthe M29F200T(Top Boot) and D4h for the M29F200B (Bottom Boot). These codes allow programming equipment or applications to automatically match their interface to the characteristics of the M29F200. TheElectronicSignatureis outputby a Read operation when thevoltage applied to A9 is

andaddressinput A1 isLow. The manufac-

atV

turer code is output when the Address input A0 is Low and the device code when this input is High. Other Address inputs are ignored. The codes are output on DQ0-DQ7.

TheElectronic Signaturecan alsobe read, without raisingA9toV

, by givingthememorythe Instruc-

tion AS. If the Byte-wideconfigurationis selected thecodesare outputonDQ0-DQ7withDQ8-DQ14 atHigh impedance;if the Word-wideconfiguration isselected thecodes are output on DQ0-DQ7with DQ8-DQ15at 00h.

Block Protection. Each block can be separately protected against Program or Erase on programming equipment. Block protection provides additional data security, as it disables all program or eraseoperations.Thismodeisactivatedwhenboth A9 and G are raised to V

and an address in the

blockis applied on A12-A16.TheBlock Protection algorithmis showninFigure14. Blockprotection is initiatedon the edge of W falling to V a delayof 100µs,the edge of W rising to V

. Then after

ends theprotectionoperations.Blockprotectionverifyis achievedby bringingG, E, A0and A6toV

, while W is atVIHandA9at VID. Underthese

toV

andA1

conditions,reading the data outputwill yield 01h if the block defined by the inputs on A12-A16 is protected.Any attempt to program or erase a protectedblockwill be ignored by the device.

6/33

M29F200T, M29F200B

Table4. User Bus Operations

(1)

Operation E G W RP BYTE A0 A1 A6 A9 A12 A15

Read Word V

Read Byte V

Write Word V

Write Byte V Output Disable V

Standby V

ILVIL

ILVIH

Reset X X X V Block

Protection Blocks

Unprotection Block

Protection Verify

Block Unprotection Verify

Block Temporary Unprotection

Notes: 1. X = V

(2,4) V

(2,4)

ILVIDVIL

(4)VIDVIDVIL

VILV

XX X V

or V

2. Block Address must be given on A12-A16 bits.

3. See Table6.

4. Operation performed onprogramming equipment.

A0 A1 A6 A9 A12 A15

A0 A1 A6 A9 A12 A15 Data Input Data Input

A0 A1 A6 A9 A12 A15

X X X X X X X Hi-Z Hi-Z Hi-Z

XXVIHX X X X X X X Hi-Z Hi-Z Hi-Z

X X X X X X X Hi-Z Hi-Z Hi-Z

Pulse V

XXXXVIDXX X X X

XXXXVIDVIHV

XVILVIHVILVIDA12 A15 X X

XVILVIHVIHVIDA12 A15 X X

X XXXXXX X X X

DQ15

A–1

Data

Output

Address

Input

Address

Input

XXX

DQ8-

DQ14

Data

Output

Hi-Z

DQ0-DQ7

Data

Output

Data

Output

Data Input

Block

Protect

(3)

Status

Block

Protect

(3)

Status

Table5. Read ElectronicSignature (followingAS instruction or with A9 = VID)

Org. Code Device E G W BYTE A0 A1

Word-

wide

Manufact.

Code

Device

Code

Manufact.

Code

M29F200T V M29F200B V

VILV

VILVILDon’t Care 0 00h 20h

VILVILDon’t Care

Byte-

wide

Device

M29F200T V

VILV

Code

M29F200B V

VILV

Other

Addresses

VILDon’t Care 0 00h D3h VILDon’t Care 0 00h D4h

VILDon’t Care

DQ15

A–1

Don’t Care

Table6. Read Block Protectionwith AS Instruction

Code E G W A0 A1 A12 - A16

Protected Block V Unprotected Block V

V V

Block Address Don’t Care 01h

Block Address Don’t Care 00h

Addresses

Other

DQ8 DQ14

DQ0 -

DQ7

Hi-Z 20h

Hi-Z D3h

Hi-Z D4h

DQ0 - DQ7

7/33

M29F200T, M29F200B

Block Temporary Unprotection. Any previously

protectedblock can be temporarily unprotected in orderto changestoreddata.Thetemporaryunprotection mode is activated by bringing RP to V

During the temporary unprotection mode the previously protected blocks are unprotected.A block can be selected and data can be modified by executingtheEraseorPrograminstructionwiththe RPsignal held at V

. When RPis returnedto VIH,

all the previously protected blocks are again protected.

Block Unprotection. All protectedblocks can be unprotected on programming equipment to allow updating of bit contents. All blocks must first be protectedbefore the unprotectionoperation.Block unprotectionis activated when A9, G and E are at

and A12, A15 at VIH. The Block Unprotection

algorithm is shown in Figure 15. Unprotection is initiatedbytheedgeofW fallingtoV

.Aftera delay

of 10ms, the unprotection operation will end. Unprotectionverifyis achievedby bringingGand E to

whileA0 is at VIL, A6 and A1 are at VIHandA9

remains at V

. In these conditions, reading the

outputdata willyield 00h if theblock definedby the inputsA12-A16hasbeen succesfullyunprotected. Eachblock mustbeseparatelyverified bygivingits address in order to ensure that it has been unprotected.

INSTRUCTIONS AND COMMANDS

The Command Interface latches commands written to the memory. Instructionsare made up from one or more commands to performRead Memory Array,ReadElectronicSignature,Read Block Protection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are madeof addressanddatasequences.Theinstructionsrequirefrom1 to 6 cycles,thefirstorfirstthree ofwhicharealwayswriteoperationsusedtoinitiate the instruction. They are followed by either further write cycles to confirm the first command or execute the command immediately. Command sequencing must be followed exactly. Any invalid combinationof commands will reset the device to Read Array. The increased number of cycles has been chosen to assure maximum data security. Instructionsare initialised by two initial Coded cycleswhich unlockthe CommandInterface.In addition, for Erase, instruction confirmation is again precededby the twoCoded cycles.

Status RegisterBits

P/E.C.statusis indicatedduring executionbyData Polling on DQ7, detection of Toggleon DQ6 and DQ2, or Error on DQ5 and Erase Timer DQ3 bits.

Any read attempt during Program or Erase commandexecutionwill automaticallyoutputthesefive StatusRegisterbits.The P/E.C.automaticallysets

bits DQ2, DQ3, DQ5, DQ6 and DQ7. Other bits (DQ0, DQ1 and DQ4) are reservedfor future use and should be masked. See Tables9 and 10.

Data Polling Bit (DQ7). When Programming operations are in progress, this bit outputs the complement of the bit being programmed on DQ7. DuringEraseoperation,it outputs a ’0’. After completionof the operation,DQ7 will output the bit last programmedor a ’1’ after erasing. Data Polling is valid and only effective during P/E.C. operation, that is after the fourth W pulse for programmingor after the sixth W pulse for erase. It must be performedat the address being programmedor at an address within the block being erased. If all the blocksselectedfor erasureare protected,DQ7 will beset to ’0’for about100µs, and then return to the previous addressed memory data value. See Figure11forthe Data Polling flowchart and Figure10 for the Data Polling waveforms.DQ7 will also flag the Erase Suspend mode by switching from ’0’ to ’1’ at the start of the Erase Suspend. In order to monitor DQ7 in the Erase Suspend mode an address within a block being erased must be provided. For a Read Operation in Erase Suspend mode, DQ7 will output ’1’ if the read is attempted onablockbeingerasedandthedatavalueon other blocks. During Program operation in Erase SuspendMode, DQ7 will have the samebehaviour as in the normal program execution outside of the suspendmode.

Table 7. Commands

Hex Code Command

00h Invalid/Reserved 10h Chip Erase Confirm 20h Reserved 30h Block Erase Resume/Confirm 80h Set-up Erase

90h

A0h Program B0h EraseSuspend F0h Read Array/Reset

Read Electronic Signature/ Block Protection Status

8/33

M29F200T, M29F200B

Table8. Instructions

(1)

Mne. Instr. Cyc. 1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc. 7th Cyc.

(2,4)

Read/Reset MemoryArray

(3,7)

Addr.

Data F0h

Byte AAAAh 5555h AAAAh

(3,7)

Addr.

Word 5555h 2AAAh 5555h

Read Memory Array until a new write cycle is initiated.

ReadMemory Array until a new write cycle isinitiated.

Data AAh 55h F0h

(4)

AutoSelect 3+

Addr.

(3,7)

Word 5555h 2AAAh 5555h

ReadElectronic Signatureor Block Protection Status until a new write cycle is initiated. See Note 5 and 6.

Byte AAAAh 5555h AAAAh

Data AAh 55h 90h

PG Program 4

BE BlockErase 6

Byte AAAAh 5555h AAAAh

(3,7)

Addr.

Word 5555h 2AAAh 5555h

Data AAh 55h A0h

Byte AAAAh 5555h AAAAh AAAAh 5555h

(3,7)

Addr.

Word 5555h 2AAAh 5555h 5555h 2AAAh

Program

Address

Program

Data

Read Data Polling or ToggleBit until Program completes.

Block

Address

Additional

Block

Data AAh 55h 80h AAh 55h 30h 30h

CE ChipErase 6

Addr.

Word 5555h 2AAAh 5555h 5555h 2AAAh 5555h

Byte AAAAh 5555h AAAAh AAAAh 5555h AAAAh

(3,7)

Data AAh 55h 80h AAh 55h 10h

(3,7)

Notes: 1. Commands not interpreted in this table will default to read array mode.

Suspend

Erase

Resume

2. Await of t before starting any new operation.

3. X = Don’t Care.

4. The first cycles of the RD or AS instructions are followed by read operations.Any number of readcycles can occur after the command cycles.

5. SignatureAddress bitsA0,A1 at V Device code.

6. Block Protection Address: A0 at V

7. For Coded cycles address inputs A15 and A16 are don’t care.

8. Optional, additional Blocks addresses must be entered within the erase timeout delay after last write entry, timeout status can be verified through DQ3 value (see EraseTimerBit DQ3 description). When full command is entered, read Data Polling or Togglebit until Erase is completed or suspended.

9. Read Data Polling, Togglebits or RB until Erase completes.

10.During Erase Suspend, Read and Data Programfunctionsare allowed in blocks not being erased.

is necessary after a Read/Reset command if the memory was in an Erase or Programmode

PLYH

Erase

(10)

Addr.

Data B0h

(3,7)

Addr.

Data 30h

will output Manufacturer code (20h). Address bits A0 at VIHandA1 at VILwill output

,A1atVIHand A12-A16 within the Block will outputthe Block Protection status.

Read until Togglestops, then read all the dataneeded from any Block(s) not being erased then Resume Erase.

Read Data Polling or ToggleBits untilErase completes or Erase is suspended another time

(8)

Note 9

9/33

M29F200T, M29F200B

Table 9. Status Register Bits

DQ Name Logic Level Definition Note

’1’

Data

Polling

’0’ Erase On-going

DQ Program On-going

Erase Complete or erase block in Erase Suspend

Program Complete or data of non erase block during Erase Suspend

Indicates the P/E.C. status, check during Program or Erase, and on completion before checking bits DQ5 for Program or Erase Success.

6 ToggleBit

5 Error Bit

4 Reserved

Erase

Time Bit

2 ToggleBit

’-1-0-1-0-1-0-1-’ Erase or Program On-going Successive reads output complementary

DQ Program Complete

’-1-1-1-1-1-1-1-’

’1’ Program or Erase Error ’0’ Program or Erase On-going

’1’ Erase Timeout Period Expired

’0’

’-1-0-1-0-1-0-1-’

Erase Complete or Erase Suspend on currently addressed block

Erase TimeoutPeriod On-going

Chip Erase, Erase or Erase Suspend on the currently addressed block. Erase Error due to the currently addressed block (when DQ5 = ’1’).

Program on-going, Erase on-going on another block or Erase Complete

Erase Suspend read on non Erase Suspend block

data on DQ6 while Programming or Erase operations are on-going. DQ6 remains at constant level when P/E.C. operations are completed or Erase Suspend is acknowledged.

This bit is set to ’1’in the case of Programming or Erase failure.

P/E.C. Erase operation has started. Only possible command entry is Erase Suspend (ES).

An additional block to be erased in parallel can be entered to the P/E.C.

Indicates the erase status and allows to identify the erased block

1 Reserved 0 Reserved

Notes: Logic level ’1’is High, ’0’ is Low.-0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.

ToggleBit (DQ6). WhenProgrammingor Erasing

operationsare in progress,successiveattemptsto readDQ6willoutputcomplementarydata.DQ6will toggle following togglingof either G, or E when G is low. The operation is completed when two successivereadsyield thesameoutputdata.Thenext readwilloutputthe bitlastprogrammedora’1’after erasing. The toggle bit DQ6 is valid only during P/E.C. operations,thatis after the fourth W pulse

Erase. If the blocks selected for erasure are protected, DQ6 will toggle for about 100µs and then returnback toRead. DQ6will beset to’1’if a Read operationisattemptedonan EraseSuspendblock. When erase is suspended DQ6 will toggle during programmingoperations in a blockdifferentto the blockin EraseSuspend.EitherE or G togglingwill causeDQ6 to toggle.See Figure 12 forToggleBit flowchartand Figure 13 for ToggleBit waveforms.

for programming or after the sixth W pulse for

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ST M29F200T, M29F200B User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual