Figure 27.Write to Buffer and Program Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . . 90
7/93
1 Summary descriptionM29DW128F
1 Summary description
The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage (2.7
to 3.6V) supply. V
1.65V. At Power-up the memory defaults to its Read mode.
The M29DW128F features an asymmetrical block architecture, with 16 parameter and 254
main blocks, divided into four Banks, A, B, C and D, providing multiple Bank operations. While
programming or erasing in one bank, read operations are possible in any other bank. The bank
architecture is summarized in Ta bl e 2 . Eight of the Parameter Blocks are at the top of the
memory address space, and eight are at the bottom.
Program and Erase commands are written to the Command Interface of the memory. An onchip Program/Erase Controller simplifies the process of programming or erasing the memory by
taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified.
The command set required to control the memory is consistent with JEDEC standards. The
Chip Enable, Output Enable and Write Enable signals control the bus operations of the
memory. They allow simple connection to most microprocessors, often without additional logic.
The device supports Asynchronous Random Read and Page Read from all blocks of the
memory array.
is an additional voltage supply that allows to drive the I/O pins down to
CCQ
The M29DW128F has one extra 256 Byte block (Extended Block) that can be accessed using a
dedicated command. The Extended Block can be protected and so is useful for storing security
information. However the protection is irreversible, once protected the protection cannot be
undone.
Each block can be erased independently, so it is possible to preserve valid data while old data
is erased.
The device features four different levels of hardware and software block protection to avoid
unwanted program or erase (modify). The software block protection features are available in 16
bit memory organization only:
●Hardware Protection:
–The V
/WP provides a hardware protection of the four outermost parameter blocks
PP
(two at the top and two at the bottom of the address space).
–The RP
pin temporarily unprotects all the blocks previously protected using a High
Voltage Block Protection technique (see Appendix D: High Voltage Block Protection).
●Software Protection
–Standard Protection
–Password Protection
The memory is offered in TSOP56 (14 x 20mm) and TBGA64 (10 x 13mm, 1mm pitch)
packages. The 8-bit Bus mode is only available when the M29DW128F is delivered in TSOP56
package. In order to meet environmental requirements, ST offers the M29DW128F in
ECOPACK
®
packages. ECOPACK packages are Lead-free. The category of second Level
Interconnect is marked on the package and on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com. The memory is supplied with all the bits erased (set to ’1’).
8/93
M29DW128F1 Summary description
Table 1.Signal Names
A0-A22Address Inputs
DQ0-DQ7Data Inputs/Outputs
DQ8-DQ14Data Inputs/Outputs
DQ15A–1Data Input/Output or Address Input
E
Chip Enable
G
W
Output Enable
Write Enable
RPReset/Block Temporary Unprotect
RB
BYTE
V
CC
V
CCQ
V
/WPVPP/Write Protect
PP
V
SS
Ready/Busy Output
Byte/Word Organization Select
Supply Voltage
Supply Voltage for Input/Outputs
Ground
(1)
NCNot Connected Internally
1. The x8 organization is only available in TSOP56 Package while the x16 organization is available for both
Figure 3.TBGA Connections (Top view through package)
V
87
NC
A22
NC
CCQ
V
SS
NC
NC
NC
654321
A
B
C
D
E
F
G
H
V
NC
NC
NC
NC
NC
CCQ
NC
NC
A3
A4
A2
A1A20
A0
E
G
V
SS
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
V
PP
A18
DQ2
DQ10
DQ11
DQ3
RB
/
WP
W
RP
A21
A19
DQ5
DQ12
V
CC
DQ4
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A13
A12
A14
A15
A16
NC
DQ15
V
SS
AI09210b
11/93
1 Summary descriptionM29DW128F
Figure 4.Block Addresses (x8)
Bank A
Bank B
000000h
001FFFh
00E000h
00FFFFh
010000h
01FFFFh
1F0000h
1FFFFFh
200000h
20FFFFh
7F0000h
7FFFFFh
8 KBytes
8 KBytes
64 KBytes
64 KBytes
64 KBytes
64 KBytes
Address lines A22-A0, DQ15A-1
Total of 8
Parameter
Blocks
Total of 31
Main Blocks
Total of 96
Main Blocks
(x8)
Bank C
Bank D
800000h
80FFFFh
DF0000h
DFFFFFh
E00000h
E0FFFFh
FE0000h
FEFFFFh
FF0000h
FF1FFFh
FFE000h
FFFFFFh
64 KBytes
Total of 96
Main Blocks
64 KBytes
64 KBytes
Total of 31
Main Blocks
64 KBytes
8 KBytes
Total of 8
Parameter
Blocks
8 KBytes
1. Also see Appendix A and Table 34 for a full listing of the Block Addresses.
12/93
AI08966
M29DW128F1 Summary description
Figure 5.Block Addresses (x16)
(x16)
Address lines A22-A0
Bank A
Bank B
000000h
000FFFh
007000h
007FFFh
008000h
00FFFFh
0F8000h
0FFFFFh
100000h
107FFFh
3F8000h
3FFFFFh
4 KWords
4 KWords
32 KWords
32 KWords
32 KWord
32 KWords
Total of 8
Parameter
Blocks
Total of 31
Main Blocks
Total of 96
Main Blocks
Bank C
Bank D
400000h
32 KWords
407FFFh
Total of 96
Main Blocks
6F8000h
32 KWords
6FFFFFh
700000h
32 KWords
707FFFh
Total of 31
Main Blocks
7F0000h
32 KWords
7F7FFFh
7F8000h
4 KWords
7F8FFFh
Total of 8
Parameter
Blocks
7FF000h
4 KWords
7FFFFFh
1. Also see Appendix A, Table 34 for a full listing of the Block Addresses.
13/93
AI08967
2 Signal descriptionsM29DW128F
2 Signal descriptions
See Figure 1: Logic Diagram, and Table 1: Signal Names, for a brief overview of the signals
connected to this device.
2.1 Address Inputs (A0-A22)
The Address Inputs select the cells in the memory array to access during Bus Read operations.
During Bus Write operations they control the commands sent to the Command Interface of the
Program/Erase Controller.
2.2 Data Inputs/Outputs (DQ0-DQ7)
The Data I/O outputs the data stored at the selected address during a Bus Read operation.
During Bus Write operations they represent the commands sent to the Command Interface of
the internal state machine.
2.3 Data Inputs/Outputs (DQ8-DQ14)
The Data I/O outputs the data stored at the selected address during a Bus Read operation
when BYTE
impedance. During Bus Write operations the Command Register does not use these bits.
When reading the Status Register these bits should be ignored.
is High, VIH. When BYTE is Low, VIL, these pins are not used and are high
2.4 Data Input/Output or Address Input (DQ15A–1)
When the device is in x16 Bus mode, this pin behaves as a Data Input/Output pin (as DQ8DQ14). When the device is in x8 Bus mode, this pin behaves as an address pin; DQ15A–1 Low
will select the LSB of the addressed Word, DQ15A–1 High will select the MSB. Throughout the
text consider references to the Data Input/Output to include this pin when the device operates
in x16 bus mode and references to the Address Inputs to include this pin when the device
operates in x8 bus mode except when stated explicitly otherwise.
2.5 Chip Enable (E)
The Chip Enable pin, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, V
, all other pins are ignored.
IH
2.6 Output Enable (G)
The Output Enable pin, G, controls the Bus Read operation of the memory.
14/93
M29DW128F2 Signal descriptions
2.7 Write Enable (W)
The Write Enable pin, W, controls the Bus Write operation of the memory’s Command Interface.
2.8 V
The VPP/Write Protect pin provides two functions. The VPP function allows the memory to use
an external high voltage power supply to reduce the time required for Program operations. This
is achieved by bypassing the unlock cycles and/or using the multiple Word (2 or 4 at-a-time) or
multiple Byte Program (2, 4 or 8 at-a-time) commands.
The Write Protect function provides a hardware method of protecting the four outermost boot
blocks (two at the top, and two at the bottom of the address space). When V
Low, V
these blocks are ignored while V
When V
the four outermost boot blocks. Program and Erase operations can now modify the data in
these blocks unless the blocks are protected using Block Protection.
Applying V
(including the four outermost parameter blocks) using a High Voltage Block Protection
technique (In-System or Programmer technique). See Table 9: Hardware Protection for details.
When V
mode. When V
Bypass Program operations the memory draws I
circuits. See the description of the Unlock Bypass command in the Command Interface section.
The transitions from V
Never raise V
memory may be left in an indeterminate state.
Write Protect (VPP/WP)
PP/
/Write Protect is
, the memory protects the four outermost boot blocks; Program and Erase operations in
IL
/Write Protect is High, VIH, the memory reverts to the previous protection status of
PP
to the VPP/WP pin will temporarily unprotect any block previously protected
PPH
/Write Protect is raised to V
PP
/Write Protect returns to VIH or VIL normal operation resumes. During Unlock
PP
to VPP and from VPP to VIH must be slower than t
IH
/Write Protect to VPP from any mode except Read mode, otherwise the
PP
/Write Protect is Low, even when RP is at VID.
PP
the memory automatically enters the Unlock Bypass
PP
from the pin to supply the programming
PP
PP
, see Figure 20.
VHVPP
The V
/Write Protect pin must not be left floating or unconnected or the device may become
PP
unreliable. A 0.1µF capacitor should be connected between the V
V
Ground pin to decouple the current surges from the power supply. The PCB track widths
SS
must be sufficient to carry the currents required during Unlock Bypass Program, I
2.9 Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all the blocks previously protected using a High Voltage
Block Protection technique (In-System or Programmer technique).
Note that if V
even if RP
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, V
least t
PLPX
for Bus Read and Bus Write operations after t
Ready/Busy Output section, Table 30: Reset/Block Temporary Unprotect AC Characteristics
and Figure 18 and Figure 19 for more details.
/WP is at VIL, then the four outermost parameter blocks will remain protected
PP
is at VID.
. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be ready
or t
PHEL
15/93
RHEL
/Write Protect pin and the
PP
.
PP
, for at
IL
, whichever occurs last. See the
2 Signal descriptionsM29DW128F
Holding RP at VID will temporarily unprotect all the blocks previously protected using a High
Voltage Block Protection technique. Program and erase operations on all blocks will be
possible. The transition from V
to VID must be slower than t
IH
PHPHH
.
2.10 Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or erase operation. During Program or erase operations Ready/Busy is
Low, V
. Ready/Busy is high-impedance during Read mode, Auto Select mode and Erase
OL
Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table 30: Reset/Block Temporary Unprotect AC Characteristics
and Figure 18 and Figure 19.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11 Byte/Word Organization Select (BYTE)
It is used to switch between the x8 and x16 Bus modes of the memory when the M29DW128F
is delivered in TSOP56 package. When Byte/Word Organization Select is Low, V
is in x8 mode, when it is High, V
2.12 V
V
powered independently from V
Supply Voltage
CCQ
provides the power supply to the I/O and control pins and enables all Outputs to be
CCQ
, the memory is in x16 mode.
IH
. V
CC
can be tied to VCC or can use a separate supply.
CCQ
2.13 VCC Supply Voltage (2.7V to 3.6V)
VCC provides the power supply for all operations (Read, Program and Erase).
The Command Interface is disabled when the V
Voltage, V
. This prevents Bus Write operations from accidentally damaging the data during
LKO
power up, power down and power surges. If the Program/Erase Controller is programming or
erasing during this time then the operation aborts and the memory contents being altered will
be invalid.
A 0.1µF capacitor should be connected between the V
Ground pin to decouple the current surges from the power supply. The PCB track widths must
be sufficient to carry the currents required during Program and erase operations, I
CC
, the memory
IL
Supply Voltage is less than the Lockout
Supply Voltage pin and the VSS
CC
.
CC2
2.14 VSS Ground
VSS is the reference for all voltage measurements. The device features two VSS pins both of
which must be connected to the system ground.
16/93
M29DW128F3 Bus operations
3 Bus operations
There are five standard bus operations that control the device. These are Bus Read (Random
and Page modes), Bus Write, Output Disable, Standby and Automatic Standby.
Dual operations are possible in the M29DW128F, thanks to its multiple bank architecture. While
programming or erasing in one banks, read operations are possible in any of the other banks.
Write operations are only allowed in one bank at a time.
See Ta bl e 3 and Ta bl e 6 , Bus Operations, for a summary. Typically glitches of less than 5ns on
Chip Enable, Write Enable, and Reset/Block Temporary Unprotect pins are ignored by the
memory and do not affect bus operations.
3.1 Bus Read
Bus Read operations read from the memory cells, or specific registers in the Command
Interface. To speed up the read operation the memory array can be read in Page mode where
data is internally read and stored in a page buffer. The Page has a size of 8 Words and is
addressed by the address inputs A0-A2.
A valid Bus Read operation involves setting the desired address on the Address Inputs,
applying a Low signal, V
V
. The Data Inputs/Outputs will output the value, see Figure 12: Random Read AC
IH
Wavefor ms, Figure 13: Page Read AC Waveforms, and Table 26: Read AC Characteristics, for
details of when the output becomes valid.
, to Chip Enable and Output Enable and keeping Write Enable High,
IL
3.2 Bus Write
Bus Write operations write to the Command Interface. A valid Bus Write operation begins by
setting the desired address on the Address Inputs. The Address Inputs are latched by the
Command Interface on the falling edge of Chip Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Command Interface on the rising edge of Chip
Enable or Write Enable, whichever occurs first. Output Enable must remain High, V
the whole Bus Write operation. See Figure 14 and Figure 15, Write AC Waveforms, and
Ta bl e 2 7 and Tab le 2 8, Write AC Characteristics, for details of the timing requirements.
3.3 Output Disable
The Data Inputs/Outputs are in the high impedance state when Output Enable is High, VIH.
3.4 Standby
When Chip Enable is High, VIH, the memory enters Standby mode and the Data Inputs/Outputs
pins are placed in the high-impedance state. To reduce the Supply Current to the Standby
Supply Current, I
level see Table 25: DC Characteristics. During program or erase operations the memory will
continue to use the Program/Erase Supply Current, I
the operation completes.
, Chip Enable should be held within V
CC2
, during
IH
± 0.2V. For the Standby current
CC
, for Program or Erase operations until
CC3
17/93
3 Bus operationsM29DW128F
3.5 Automatic Standby
If CMOS levels (VCC ± 0.2V) are used to drive the bus and the bus is inactive for 300ns or more
the memory enters Automatic Standby where the internal Supply Current is reduced to the
Standby Supply Current, I
operation is in progress.
. The Data Inputs/Outputs will still output data if a Bus Read
CC2
3.6 Special Bus Operations
Additional bus operations can be performed to read the Electronic Signature, verify the
Protection Status of the Extended Memory Block (second section), and apply and remove
Block Protection. These bus operations are intended for use by programming equipment and
are not usually used in applications. They require V
3.6.1 Read Electronic Signature
The memory has two codes, the Manufacturer code and the Device code used to identify the
memory. These codes can accessed by performing read operations with control signals and
addresses set as shown in Ta bl e 4 and Ta b le 6 .
These codes can also be accessed by issuing an Auto Select command (see Auto Select
command in Section 6: Command Interface).
to be applied to some pins.
ID
3.6.2 Verify Extended Block Protection Indicator
The Extended Block is divided in two sections of which one is Factory Locked and the second
one is either Customer Lockable or Customer Locked.
The Protection Status of the second section of the Extended Block (Customer Lockable or
Customer Locked) can be accessed by reading the Extended Block Protection Indicator. This is
performed by applying the signals as shown in Ta b le 5 and Ta bl e 8 . The Protection Status of
the Extended Block is then output on bits DQ7 and DQ6 of the Data Input/Outputs. (see Ta bl e 3
and Ta bl e 6, Bus Operations).
The Protection Status of the Extended Block can also be accessed by issuing an Auto Select
command (see Auto Select command in Section 6: Command Interface).
3.6.3 Verify Block Protection Status
The Protection Status of a Block can be directly accessed by performing a read operation with
control signals and addresses set as shown in Ta bl e 5 and Ta bl e 8.
If the Block is protected, then 01h (in x8 mode) is output on Data Input/Outputs DQ0-DQ7,
otherwise 00h is output.
3.6.4 Hardware Block Protect
The VPP/WP pin can be used to protect the four outermost parameter blocks. When VPP/WP is
at V
the four outermost parameter blocks are protected and remain protected regardless of
IL
the Block Protection Status or the Reset/Block Temporary Unprotect pin state.
18/93
M29DW128F3 Bus operations
3.6.5 Temporary Unprotect of High Voltage Protected Blocks
The RP pin can be used to temporarily unprotect all the blocks previously protected using the
In-System or the Programmer protection technique (High Voltage techniques).
Refer to Reset/Block Temporary Unprotect (RP) in Section 2: Signal descriptions.
Table 3.Bus Operations, 8-bit Mode
Address InputsData Inputs/Outputs
A22-A0, DQ15A-1DQ14-DQ8DQ7-DQ0
Operation
(1)
EGWRP
VPP/WP
Bus Read
Bus Write
Output DisableX
Standby
1. X = VIL or VIH.
V
ILVILVIHVIH
V
ILVIHVILVIH
V
IHVIHVIH
V
XX
IH
V
IH
V
IH
V
IH
V
V
IH
IH
Table 4.Read Electronic Signature, 8-bit Mode
Read Cycle
(1)
Manufacturer Code
Device Code (Cycle 1)
Device Code (Cycle 2)
Device Code (Cycle 3)
1. X = VIL or VIH.
EGW
V
ILVILVIH
A22-
A10
X
A9 A8
V
ID
X
A7-A6A5-
V
Cell AddressHi-ZData Output
Command AddressHi-ZData Input
XHi-ZHi-Z
XHi-ZHi-Z
Address Inputs
A3 A2 A1 A0
A4
V
X
ILVILVILVIL
VILVILVILV
IL
V
V
IL
IHVIHVIHVIL
V
IHVIHVIHVIH
DQ15A-1DQ14-
XHi-Z20h
XHi-Z7Eh
IH
XHi-Z20h
XHi-Z00h
Data Inputs/
Outputs
DQ8
DQ7-
DQ0
19/93
3 Bus operationsM29DW128F
Table 5.Block Protection, 8-bit Mode
Operation
(1)
GW RP
E
VPP/
WP
A22-
A12
A11-
A9 A8 A7 A6
A10
Address Inputs
A5-A4A3-
(2)
A2
A1 A0
DQ15A-1DQ14-
Data Inputs/Outputs
DQ8
DQ7-DQ0
Ver if y
Extended
Block
Protection
Indicator
(bits DQ6,
DQ7)
Ver if y Bloc k
Protection
Status
V
ILVILVIHVIHVIH
BA
BKA
X
V
X
X
ID
X
V
IL
V
ILVIH
V
X
IH
Hi-Z
V
IL
V
IL
V
X
IL
(Customer
Lockable)
(Customer
Locked)
(protected)
(unprotected)
Temporary
Block
Unprotect
(4)
XXX
V
XValidData Input
ID
1. X = VIL or VIH.
2. BKA Bank Address, BA any Address in the Block.
3. This indicates the protection status of the second section of the Extended Block; the first section of the Extended Block
being always Factory Locked.
4. The RP pin unprotects all the blocks that have been previously protected using a High Voltage protection Technique.
Table 6.Bus Operations, 16-bit Mode
Address InputsData Inputs/Outputs
A22-A0DQ15A-1, DQ14-DQ0
Operation
(1)
E
GWRP
VPP/
WP
80h
C0h
(3)
01h
00h
Bus Read
Bus Write
Output DisableX
Standby
V
ILVILVIHVIHVIH
V
ILVIHVILVIHVIH
V
IHVIHVIHVIH
V
IH
XX
V
IHVIH
1. X = VIL or VIH.
Table 7.Read Electronic Signature, 16-bit Mode
Address InputsData Inputs/Outputs
Read Cycle
(1)
Manufacturer Code
Device Code (Cycle 1)
Device Code (Cycle 2)
Device Code (Cycle 3)
1. X = VIL or VIH.
20/93
E
GW
V
ILVILVIH
A22-
A10
X
A9A8
V
ID
X
A7-A6A5-
V
Cell AddressData Output
Command AddressData Input
XHi-Z
XHi-Z
A3A2A1A0DQ15A-1, DQ14-DQ0
A4
V
X
ILVILVILVIL
VILVILVILV
IL
V
V
IL
IHVIHVIHVIL
V
IHVIHVIHVIH
IH
0020h
227Eh
2220h
2200h
M29DW128F3 Bus operations
Table 8.Block Protection, 16-bit Mode
Operation
(1)
G
E
W RP
VPP/
WP
A22-
A12
A11-
A9 A8 A7 A6
A10
Address Inputs
(2)
A5-A4A3-
A2
A1 A0DQ15A-1, DQ14-DQ0
Data Inputs/Outputs
Verify Extended
Block Indicator
(bits DQ6, DQ7)
Verify Block
Protection Status
Temporary Block
Unprotect
(4)
V
ILVILVIHVIHVIH
XXX
V
ID
BA
BKA
X
V
X
X
ID
V
IL
X
V
IL
V
ILVIH
V
IL
V
IH
V
IL
XValidData Input
0080h
(Customer Lockable)
00C0h
(Customer Locked)
0001h (protected)
0000h (unprotected)
1. X = VIL or VIH.
2. BKA Bank Address, BA Any Address in the Block.
3. This indicates the protection status of the second section of the Extended Block; the first section of the Extended Block
being always Factory Locked.
4. The RP pin unprotects all the blocks that have been previously protected using a High Voltage protection Technique.
(3)
21/93
4 Hardware ProtectionM29DW128F
4 Hardware Protection
The M29DW128F features hardware protection/unprotection. Refer to Ta bl e 9 for details on
hardware block protection/unprotection using V
4.1 Write Protect
The VPP/WP pin protects the four outermost parameter blocks (refer to Section 2: Signal
descriptions for a detailed description of the signals).
4.2 Temporary Block Unprotect
When held at VID, the Reset/Block Temporary Unprotect pin, RP, will temporarily unprotect all
the blocks previously protected using a High Voltage Block Protection technique.
Table 9.Hardware Protection
VPP/WP
RPFunction
/WP and RP pins.
PP
V
IH
V
IL
V
ID
VIH or V
1. The temporary unprotection is valid only for the blocks that have been protected using the High Voltage
Protection Technique (see Appendix D: High Voltage Block Protection). The blocks protected using a software
protection method (Standard, Password) do not follow this rules.
V
ID
PPH
V
ID
VIH or V
ID
4 outermost parameter blocks protected from
Program/Erase operations
All blocks temporarily unprotected except the 4
outermost blocks
All blocks temporarily unprotected
All blocks temporarily unprotected
(1)
(1)
(1)
22/93
M29DW128F5 Software Protection
5 Software Protection
The M29DW128F has two different Software Protection modes: the Standard Protection mode
and the Password Protection mode.
On first use all parts default to the Standard Protection mode and the customer is free to
activate the Standard or the Password Protection mode.
The desired protection mode is activated by setting one of two one-time programmable bits, the
Standard Protection Mode Lock bit or the Password Protection Mode Lock bit. Programming
the Standard and the Password Protection Mode Lock bit to ‘1’ will permanently activate the
Standard Protection mode and the Password Protection mode, respectively. These two bits are
one-time programmable and non-volatile, once the Protection mode has been programmed, it
cannot be changed and the device will permanently operate in the selected Protection mode. It
is recommended to activate the desired Software Protection mode when first programming the
device.
The device is shipped with all blocks unprotected. The Block Protection Status can be read by
issuing the Auto Select command (see Table 10: Block Protection Status).
The Standard and Password Protection modes offer two levels of protection, a Block Lock/
Unlock protection and a Non-Volatile protection.
For the four outermost parameter blocks, an even higher level of block protection can be
achieved by locking the blocks using the Non-Volatile Protection and then by holding the V
WP
pin Low.
5.1 Standard Protection Mode
5.1.1 Block Lock/Unlock Protection
It is a flexible mechanism to protect/unprotect a block or a group of blocks from program or
erase operations.
A volatile Lock bit is assigned to each block or group of blocks. When the lock bit is set to ‘1’ the
associated block or group of blocks is protected from program/erase operations, when the Lock
bit is set to ‘0’ the associated block or group of blocks is unprotected and can be programmed
or erased.
The Lock bits can be set (‘1’) and cleared (‘0’) individually as often as required by issuing a Set
Lock Bit command and Clear Lock bit command, respectively.
After a Power-up or Hardware Reset, all the Lock bits are cleared to ‘0’ (block unlocked).
5.1.2 Non-Volatile Protection
A Non-Volatile Modify Protection bit is assigned to each block or group of blocks.
PP
/
When a Non-Volatile Modify Protection bit is set to ‘1’ the associated block or group of blocks is
protected, preventing any program or erase operations in this block or group of blocks.
The Non-Volatile Modify Protection bits are set individually by issuing a Set Non-Volatile Modify
Protection Bit command. They are non-volatile and will remain set through a hardware reset or
a power-down/power-up sequence.
23/93
5 Software ProtectionM29DW128F
The Non-Volatile Modify Protection bits cannot be cleared individually, they can only be cleared
all at the same time by issuing a Clear Non-Volatile Modify Protection Bits command.
However if any one of the Non-Volatile Modify Protection bits has to be cleared, care should be
taken to preprogram to ‘1’ all the Non-Volatile Modify Protection Bits prior to issuing the Clear
Non-Volatile Modify Protection bits in order to prevent the over-erasure of previously cleared
Non Volatile Modify Protection bits. It is crucial to prevent over-erasure because the process
may lead to permanent damage to the Non-Volatile Modify Protection Bits and the device does
not have any built-in means of preventing over-erasure.
The device features a volatile Lock-Down bit which can be used to prevent changing the state
of the Non-Volatile Modify Protection bits. When set to ‘1’, the Non-Volatile Modify Protection
bits can no longer be modified; when set to ‘0’, the Non-Volatile Modify Protection bits can be
set and reset using the Set Non-Volatile Modify Protection Bit command and the Clear NonVolatile Modify Protection Bits command, respectively.
The Lock-Down bit is set by issuing the Set Lock-Down Bit Command. It is not cleared using a
command, but through a hardware reset or a power-down/power-up sequence.
The parts are shipped with the Non-Volatile Modify Protection bits set to ‘0’.
Locked blocks and Non-Volatile Locked blocks can co-exist in the same memory array.
Refer to Table 10: Block Protection Status and Figure 7: Software Protection Scheme for details
on the block protection mechanism.
5.2 Password Protection Mode
The Password Protection mode provides a more advanced level of software protection than the
Standard Protection mode.
Prior to entering the Password Protection mode, it is necessary to set a password and to verify
it (see Password Program command and Password Verify command). The Password Protection
mode is then activated by programming the Password Protection Mode Lock bit to ‘1’. The
Reset/Block Temporary Unprotect pin, RP
This operation is not reversible and once the bit is programmed the device will permanently
remain in the Password Protection mode.
The Password Protection mode uses the same protection mechanisms as the Standard
Protection mode (Block Lock/Unlock, Non-Volatile Protection).
5.2.1 Block Lock/Unlock Protection
The Block Lock/Unlock Protection operates exactly in the same way as in the Standard
Protection mode.
5.2.2 Non-Volatile Protection
The Non-Volatile Protection is more advanced in the Password Protection mode.
In this mode, the Lock-Down bit cannot be cleared through a hardware reset or a power-down/
power-up sequence.
, can be at VID or at VIH.
The Lock-Down bit is cleared by issuing the Password Protection Unlock command along with
the correct password.
24/93
M29DW128F5 Software Protection
Once the correct Password has been provided, the Lock-Down bit is cleared and the NonVolatile Modify Protection bits can be set or reset using the appropriate commands (the Set
Non-Volatile Modify Protection Bit command or the Clear Non-Volatile Modify Protection Bits
command, respectively).
If the Password provided is not correct, the Lock-Down bit remains locked and the state of the
Non-Volatile Modify Protection bits cannot be modified.
The Password is a 64-bit code located in the memory space. It must be programmed by the
user prior to selecting the Password Protection mode. The Password is programmed by issuing
a Password Program command and checked by issuing a Password Verify command. The
Password should be unique for each part.
Once the device is in Password Protection mode, the Password can no longer be read or
retrieved. Moreover, all commands to the address where the password is stored, are disabled.
Refer to Table 10: Block Protection Status and Figure 7: Software Protection Scheme for details
on the block protection scheme.
Table 10.Block Protection Status
Non-
Volatile
Lock
Bit
Volatile
Modify
Protection
Bit
Lock-
Down bit
Block
Protectio
n Status
Block Protection Status
00 0
00 1
00h
Block
Unprotected
Non-Volatile Modify Protection bit can be
modified
(1)
Non-Volatile Modify Protection bit cannot be
modified
(1)
01 0
10 0
11 0
01 1
10 1
01h
Block
Program/
Erase
Protected
Non-Volatile Modify Protection bit can be
modified
(1)
Non-Volatile Modify Protection bit cannot be
modified
(1)
11 1
1. The Lock bit can always be modified by issuing a Clear Lock Bit command or by taking the device through a Power-up or
Hardware Reset.
Figure 6.Block Protection State Diagram
Default:
Standard
Set Standard Protection
Mode
Protection
Set Password Protection
Mode
Standard
Protection
Password
Protection
ai11503
25/93
5 Software ProtectionM29DW128F
Figure 7.Software Protection Scheme
Parameter Block or
Up to 4 Main Blocks
Lock Bit
Block Lock/Unlock Protection
Non-Volatile Protection
Non-Volatile Modify
Protection Bit
Lock-Down bit
Standard Protection
mode
Password Protection
mode
AI11504
26/93
M29DW128F6 Command Interface
6 Command Interface
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of
Bus Write operations will result in the memory returning to Read mode. The long command
sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-bit or
8-bit mode.
6.1 Standard commands
See either Ta bl e 1 2, or Tab le 1 1, depending on the configuration that is being used, for a
summary of the Standard commands.
6.1.1 Read/Reset command
The Read/Reset command returns the memory to Read mode. It also resets the errors in the
Status Register. Either one or three Bus Write operations can be used to issue the Read/Reset
command.
The Read/Reset command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to Read mode. If the Read/Reset command is
issued during the time-out of a Block erase operation, the memory will take up to 10µs to abort.
During the abort period no valid data can be read from the memory.
The Read/Reset command will not abort an Erase operation when issued while in Erase
Suspend.
6.1.2 Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code, the
Protection Status of each block (Block Protection Status) and the Extended Block Protection
Indicator. It can be addressed to either Bank.
Three consecutive Bus Write operations are required to issue the Auto Select command. Once
the Auto Select command is issued Bus Read operations to specific addresses output the
Manufacturer Code, the Device Code, the Extended Block Protection Indicator and a Block
Protection Status (see Ta bl e 1 1 and Tab le 1 2 in conjunction with Ta b l e 4 , Ta bl e 5, Ta bl e 7 and
Ta bl e 8 ). The memory remains in Auto Select mode until a Read/Reset or CFI Query command
is issued.
6.1.3 Read CFI Query command
The Read CFI Query Command is used to put the addressed bank in Read CFI Query mode.
Once in Read CFI Query mode Bus Read operations to the same bank will output data from the
Common Flash Interface (CFI) Memory Area. If the read operations are to a different bank from
the one specified in the command then the read operations will output the contents of the
memory array and not the CFI data.
One Bus Write cycle is required to issue the Read CFI Query Command. Care must be taken to
issue the command to one of the banks (A22-A19) along with the address shown in Ta bl e 3 and
27/93
6 Command InterfaceM29DW128F
Ta bl e 6 .Once the command is issued subsequent Bus Read operations in the same bank
(A22-A19) to the addresses shown in Appendix B: Common Flash Interface (CFI) (A7-A0), will
read from the Common Flash Interface Memory Area.
This command is valid only when the device is in the Read Array or Auto Select mode. To enter
Read CFI query mode from Auto Select mode, the Read CFI Query command must be issued
to the same bank address as the Auto Select command, otherwise the device will not enter
Read CFI Query mode.
The Read/Reset command must be issued to return the device to the previous mode (the Read
Array mode or Auto Select mode). A second Read/Reset command is required to put the
device in Read Array mode from Auto Select mode.
See Appendix B, Ta b le 3 5, Ta b le 3 6 , Tab l e 3 7, Ta b le 3 8 , Ta bl e 3 9 and Tab le 4 0 for details on
the information contained in the Common Flash Interface (CFI) memory area.
6.1.4 Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are
required to issue the Chip Erase Command and start the Program/Erase Controller.
If any blocks are protected, then these are ignored and all the other blocks are erased. If all of
the blocks are protected the Chip Erase operation appears to start but will terminate within
about 100µs, leaving the data unchanged. No error condition is given when protected blocks
are ignored.
During the erase operation the memory will ignore all commands, including the Erase Suspend
command. It is not possible to issue any command to abort the operation. Typical chip erase
times are given in Ta bl e 18 . All Bus Read operations during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs. See the section on the Status Register for
more details.
After the Chip Erase operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs the memory will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
The Chip Erase Command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
6.1.5 Block Erase command
The Block Erase command can be used to erase a list of one or more blocks in one or more
Banks. It sets all of the bits in the unprotected selected blocks to ’1’. All previous data in the
selected blocks is lost.
Six Bus Write operations are required to select the first block in the list. Each additional block in
the list can be selected by repeating the sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts the Program/Erase Controller after a timeout period of 50µs after the last Bus Write operation. Once the Program/Erase Controller starts
it is not possible to select any more blocks. Each additional block must therefore be selected
within 50µs of the last block. The 50µs timer restarts when an additional block is selected. After
the sixth Bus Write operation a Bus Read operation within the same Bank will output the Status
Register. See the Status Register section for details on how to identify if the Program/Erase
Controller has started the Block Erase operation.
28/93
Loading...
+ 65 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.