ST M27C800 User Manual
查询M27C800-100B1TR供应商
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
■ 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
■ ACCESS TIME: 50ns
■ BYTE-WIDE or WORD-WIDE
CONFIGURABLE
■ 8 Mbit MASK ROM REPLACEMENT
■ LOW POWER CONSUMPTION
– Active Current 70mA at 8MHz
– Stand-by Current 50µA
■ PROGRAMM ING VOLTAGE: 12.5V ± 0.25V
■ PROGRAMMING TIME: 50µs/word
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Devi ce Code: B2h
M27C800
42
1
FDIP42W (F) PDIP42 (B)
42
1
44
1
SO44 (M)PLCC44 (K)
DESCRIPTION
The M27C800 is an 8 Mbit EPROM offered in t he
two ranges UV (ultra violet erase) and OTP (one
time programm able). It is ideally suited for microprocessorsystemsrequiringlarge data or program
storage. It is organised as either 1 Mwords of 8 bit
or 512 Kwords of 16 bit. The pin-out is compatible
withthe most common8 MbitMask ROM.
The FDIP42W (window ceramic frit-seal package)
has a trans parent lid which allows the user to expose the chipto ultravioletlight to erasethe bitpattern.
Anew patterncan then bewritten rapidlyto the device by following the programming procedure.
For applications wherethe content is programmed
only one time and erasure is not required, the
M27C800 is offered i n PDIP42, PLCC44 and
SO44 packages.
Figure 1. Logic Diagram
V
CC
19
A0-A18
BYTEV
E
G
PP
M27C800
V
SS
Q15A–1
15
Q0-Q14
AI01593
1/18December 2001
M27C800
Figure 2A. DIP Connections
A18 NC
1
2
A7
3
4
A6
5
A5
A4
6
7
A3
A2
8
A1
9
10
A0
V
SS
Q0
Q8
Q1
Q9
Q10
Q3
Q11
M27C800
11
E
12
13
G
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
AI01594
A8A17
A9
A10
A11
A12
A13
A14
A15
A16
BYTEV
V
SS
Q15A–1
Q7
Q14
Q6
Q13
Q5Q2
Q12
Q4
V
CC
PP
Figure 2B. LCC Connections
A18
A17
V
1
M27C800
23
Q3
NC
Q11
SS
44
NC
CC
V
A8
Q4
A9
Q12
A10
Q5
A7
A5
A6
A4
A3
A2
A1 A15
A0
E
12
V
SS
Q0
Q8
Q1
Q9
Q2
Q10
A11
34
Q13
A12
A13
A14
A16
BYTEV
V
SS
Q15A–1G
Q7
Q14
Q6
AI02042
PP
Figure 2C. SO Connections
NC NC
1
2
A7
A6
A5
A4
A3
A2
A1
A0
SS
Q0
Q8
Q9
Q3
3
4
5
6
7
8
9
10
11
M27C800
12
E
13
14
G
15
16
17Q1
18
19
20
21
A17 A8
V
Q10
Q11
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
2322
AI01595
NCA18
A9
A10
A11
A12
A13
A14
A15
A16
BYTEV
V
SS
Q15A–1
Q7
Q14
Q6
Q13
Q5Q2
Q12
Q4
V
CC
PP
Table 1. Signal Names
A0-A18 Address Inputs
Q0-Q7 Data Outputs
Q8-Q14 Data Outputs
Q15A–1 Data Output / Address Input
E
G
BYTE
V
PP
V
CC
V
SS
NC Not Connected Internally
Chip Enable
Output Enable
Byte Mode / Program Supply
Supply Voltage
Ground
2/18
M27C800
Table 2. Absolute Maximum Ratings
(1)
Symbol Parameter Value Unit
T
A Ambient Operating Temperature
T
BIAS
T
STG
(2)
V
IO
V
CC
(2)
V
A9
V
PP
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Ab solute Maximum Rating conditionsforextended periods may affectdevicereliability.Refer also totheS TMicroelectronics SURE Program andotherrelevantquality documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is V
3. Depends on range.
Temperature Under Bias –50 to 125 °C
Storage Temperature –65 to 150 °C
Input or Output Voltage (except A9) –2 to 7 V
Supply Voltage –2 to 7 V
A9 Voltage –2 to 13.5 V
Program Supply Voltage –2 to 14 V
+0.5VwithpossibleovershoottoVCC+2V for a period less than 20ns.
CC
(3)
–40 to 125 °C
Table 3. Operating Modes
Mode E
Read Word-wide
Read Byte-wide Upper
Read Byte-wide Lower
Output Disable
Program
V
IL
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = VIHor VIL,VID= 12V ± 0.5V.
V
IL
V
IL
V
IL
V
IL
Pulse V
V
IH
V
IH
V
IH
V
IL
G
V
V
V
V
V
V
X X X Hi-Z Hi-Z Hi-Z
V
BYTEV
IL
IL
IL
IH
IH
IL
IH
IL
V
IH
V
IL
V
IL
X X Hi-Z Hi-Z Hi-Z
V
PP
V
PP
V
PP
V
IH
A9 Q15A–1 Q14-Q8 Q7-Q0
PP
X Data Out Data Out Data Out
X
X
V
IH
V
IL
Hi-Z Data Out
Hi-Z Data Out
X Data In Data In Data In
X Data Out Data Out Data Out
X Hi-Z Hi-Z Hi-Z
V
ID
Code Codes Codes
Table 4. Electronic Signature
Identifier A0
Manufacturer’s Code
Device Code
V
IL
V
IH
Q15
and
Q7
Q14
and
Q6
Q13
and
Q5
Q12
and
Q4
Q11
and
Q3
Q10
and
Q2
Q9
and
Q1
Q8
andQ0Hex Data
00100000 20h
10110010 B2h
3/18
M27C800
Table 5. AC Measurement Conditions
High Speed Standard
Input Rise and Fall Times ≤ 10ns ≤ 20ns
Input Pulse Voltages 0 to 3V 0.4V to 2.4V
Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V
Figure 3. AC Testing Input Output Waveform
High Speed
3V
1.5V
0V
Standard
2.4V
0.4V
2.0V
0.8V
AI01822
DEVICE OPERATION
The operating mod es of the M 27C800 are listed in
the Operating Modes Table.A singlepower supply
is required in the read mode. All inp uts are TTL
compatible except for V
and 1 2V on A9 for the
PP
Electronic Signature.
Read Mode
The M27C800 has two organisations, Word-wide
and Byte-wide. The organisationis selected by the
signal level on the BYTE
VPPpin. When BYTEV
PP
is at VIHthe Word-wide organisation is s elect ed
and the Q15A–1 pin is used for Q15 Data Output.
When the BYTE
VPPpin is at VILthe Byte-wide organisation is selected and the Q15A–1 pin is used
for the Address Input A–1. When the memory is
logically regarded as 16 bit wide, but read in the
Byte-wide organisation, then with A–1 at V
the
IL
Figure 4. AC Testing Load Circuit
1.3V
1N914
3.3kΩ
DEVICE
UNDER
TEST
CL
CL = 30pF for High Speed
CL = 100pF for Standard
CL includes JIG capacitance
OUT
AI01823B
lower 8 bits of the 16 bit data are sel ec ted and with
A–1 at V
the upper 8 bits of the 16 bit data are
IH
selected.
The M27C800 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. In addition the Word-wide or
Byte- wide organisation must be selected.
ChipEnable (E
used fordevice selection. Output Enable (G
) is thepower controland shoul d be
)isthe
output control and should be used to gate data to
the output pins independent of device selection.
Assuming that the addresses are stable, the address access time (t
from E
to output (t
ELQV
output after a de lay of t
of G
, assuming that E has been low and the ad-
dresses have been stable for at least t
) is equal to the delay
AVQV
). Data is avai lable at the
from the falling edge
GLQV
AVQV-tGLQV
.
4/18
M27C800
Table 6. Capacitance
(1)
(TA=25°C,f=1MHz)
Symbol Parameter Test Condition Min Max Unit
C
IN
C
OUT
Note: 1. Sampled only, not 100% tested.
Input Capacitance (BYTE
Output Capacitance
VPP)V
Table 7. Read Mode DC Characteristics
Input Capacitance (except BYTEVPP)V
(1)
V
IN
IN
OUT
=0V
=0V
=0V
10 pF
120 pF
12 pF
(TA=0to70°Cor–40to85°C;VCC= 5V ± 5% or 5V ±10%; VPP=VCC)
Symbol Parameter Test Condition Min Max Unit
I
I
LO
I
CC
I
CC1
I
CC2
I
PP
V
V
IH
V
V
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after VPP.
Input Leakage Current 0V ≤ VIN≤ V
LI
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage –0.3 0.8 V
IL
(2)
Input High Voltage 2
Output Low Voltage
OL
Output High Voltage TTL
OH
2. Maximum DC voltage on Output is V
CC
+0.5V.
0V ≤ V
E
=VIL,G=VIL,
I
= 0mA, f = 8MHz
OUT
E
=VIL,G=VIL,
I
= 0mA, f = 5MHz
OUT
E
E
>VCC– 0.2V
V
PP=VCC
I
OL
I
= –400µA
OH
≤ V
OUT
=V
IH
= 2.1mA
CC
CC
2.4 V
±1 µA
±10 µA
70 mA
50 mA
1mA
50 µA
10 µA
V
+1
CC
0.4 V
V
Standby Mode
The M27C800 has a standby mode whichreduces
the supply current from 50mA to 100µA. The
M27C800 is placed in thestandby mode by applying a CMOS high signal to the E
input. When in the
standby mode, the outputs are in a high impedance state, independent of the G
input.
5/18
M27C800
Table 8A. Read Mode AC Characteristics
(1)
(TA=0to70°Cor–40to85°C;VCC= 5V ± 5% or 5V ±10%; VPP=VCC)
M27C800
Symbol Alt Parameter Test Condition
Address Valid to Output
(2)
(2)
(2)
t
ACC
Valid
BYTE High to Output
t
ST
Valid
Chip Enable Low to
t
CE
Output Valid
Output Enable Low to
t
OE
Output Valid
t
BYTE Low to Output Hi-Z
STD
Chip Enable High to
t
DF
Output Hi-Z
Output Enable High to
t
DF
Output Hi-Z
Address Transition to
t
OH
Output Transition
BYTE Low to Output
t
OH
Transition
t
AVQV
t
BHQV
t
ELQV
t
GLQV
t
BLQZ
t
EHQZ
t
GHQZ
t
AXQX
t
BLQX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after V
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
=VIL,G=V
E
=VIL,G=V
E
=V
G
=V
E
E
=VIL,G=V
=V
G
=V
E
=VIL,G=V
E
=VIL,G=V
E
IL
IL
IL
IL
IL
IL
IL
IL
IL
(3)
-50
Min Max Min Max Min Max
50 70 90 ns
50 70 90 ns
50 70 90 ns
30 35 45 ns
30 30 30 ns
030030030ns
030030030ns
555ns
555ns
-70 -90
PP.
Unit
Table 8B. Read Mode AC Characteristics
(1)
(TA=0to70°Cor–40to85°C;VCC= 5V ± 5% or 5V ±10%; VPP=VCC)
Symbol Alt Parameter Test Condition
E
=VIL,G=V
E
=VIL,G=V
G
=V
E
=V
E
=VIL,G=V
G
=V
E
=V
E
=VIL,G=V
E
=VIL,G=V
IL
IL
IL
IL
IL
IL
IL
IL
IL
(2)
(2)
(2)
t
Address Valid to Output Valid
ACC
t
BYTE High to Output Valid
ST
t
Chip Enable Low to Output Valid
CE
t
Output Enable Low to Output Valid
OE
t
BYTE Low to Output Hi-Z
STD
t
Chip Enable High to Output Hi-Z
DF
t
Output Enable High to Output Hi-Z
DF
t
Address Transition to Output Transition
OH
t
BYTE Low to Output Transition
OH
t
AVQV
t
BHQV
t
ELQV
t
GLQV
t
BLQZ
t
EHQZ
t
GHQZ
t
AXQX
t
BLQX
Note: 1. VCCmust be applied simultaneously with or before VPPand removed simultaneously or after V
2. Sampled only, not 100% tested.
M27C800
Unit-100 -120/150
Min Max Min Max
100 120 ns
100 120 ns
100 120 ns
50 60 ns
40 50 ns
040050ns
040050ns
55ns
55ns
PP.
6/18
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