– 4.5V to 5.5V for M24xxx-B
– 2.5V to 3.6V for M24xxx-BV
– 2.5V to 5.5V for M24xxx-BW
– 1.8V to 5.5V for M24xxx-BR
– 1.8V to 3.6V for M24xxx-BS
■ Hardware Write Control
■ BYTE and PAGE WRITE (up to 64 Byte s)
■ RANDOM and SEQUENTIAL READ Modes
■ Self-Timed Progr a m ming Cycle
■ Automatic Address Incrementing
■ Enhanced ESD/Latch-Up Behav ior
■ More than 100,000 Erase/Write Cycles
– More than 1 Million Erase/Write cycles for the
products specified in Table 22
■ More than 40 Year Data Retention
2
C Extended Addressing
2
C Serial Interface
Figure 1. Packages
8
1
PDIP8 (BN)
8
1
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
1/25November 2002
M24256-B, M24128-B
SUMMARY DESCRIPTION
2
These I
C-compatible electrically erasable
programmable memory (EEPROM) devices are
organized as 32K x 8 bits (M24256-B) and
16K x 8 bits (M24128-B).
Figure 2. Logi c Diagram
V
CC
3
E0-E2
SCL
WC
M24256-B
M24128-B
V
SS
SDA
AI02809
Table 1. Signal Names
E0, E1, E2Chip Enable
SDASerial Data
SCLSerial Clock
following the bus master’s 8-bit transmission.
When data is read by the bus master, the bus
master acknowledges the receipt of the data byte
in the same way. Data transfers are terminated by
a Stop condition after an Ack for Write, and after a
NoAck for Read.
Power On Reset: V
Lock-Out Write Protect
CC
In order to prevent data corruption and inadvertent
write operations during power up, a Power On Reset (POR) circuit is included. The internal reset is
held active until V
has reached the POR thresh-
CC
old value, and all operations are disabled – the device will not respond to any command. In the same
way, when V
drops from the operating voltage,
CC
below the POR threshold value, all operations are
disabled and the device will not respond to any
command. A stable and valid V
must be applied
CC
before applying any logic signal.
When the power supply is turned on, V
from V
to VCC(min), passing through a value V
SS
CC
rises
in between. The -V and -S versions of the dev i ce,
the M24xxx-BV and M24xxx-BS, i gnore all instructions until a time delay of t
moment that V
rises above the Vth threshold.
CC
has elapsed after the
PU
However, the correct operation of the device is not
guaranteed if, by this time, V
V
(min). No instructions should be s ent until the
CC
is still below
CC
later of:
afte r VCC passed the Vth threshold
–t
PU
passed the VCC(min) lev e l
–V
CC
These values are specified in Table 14.
th
WC
V
CC
V
SS
These devices are compatible with the I
Write Control
Supply Voltage
Ground
2
C memory protocol. This is a two wire serial interface that
uses a bi-directional data bus and serial clock. The
devices carry a built-in 4-bit Device Type Identifier
code (1010) in accordance with the I
2
C bus defini-
tion.
The device behaves as a slave in the I
2
C protocol,
with all memory operations synchronized by the
serial clock. Read and Write operations are initiated by a Start condition, generated by the bus master. The Start condition is followed by a Device
Select Code and RW
bit (as described in Table 2),
terminated by an acknowledge bit.
When writing data to the memory, the device in-
serts an acknowledge bit during the 9
2/25
th
bit time,
Figure 3. DIP, SO and TSSOP Connections
M24256-B
M24128-B
1
E0V
2
3
E2
4
SS
Note: 1. See page 19 (onwards) for package dimensions, and how
to identify pin-1.
8
7
6
5
AI02810B
CC
WCE1
SCL
SDAV
SIGNAL DESCRIPTION
Serial Clock (SCL)
This input signal is used to strobe all data in and
out of the device. In applications where this signal
is used by slave devices to synchronize the bus to
a slower clock, the bus master must have an open
drain output, and a pull-up resistor must be connected from Serial Clock (SCL) to V
. (Figure 4
CC
indicates how the value of the pull-up resistor c an
be calculated). In most applications, thoug h, this
method of synchronization is no t employed, and
so the pull-up resistor is not necessary, provided
that the bus master has a push-pull (rather than
open drain) output.
Serial Data (SDA)
This bi-directional signal is used to transfer data in
or out of the device. It is an open drain output that
may be wire-OR’ed with other op en drai n or open
collector signals on the bus. A pull up resistor must
be connected from Serial Data (SDA) to V
CC
. (Figure 4 indicates how the value of the pull-up resistor
can be calculated).
M24256-B, M24128-B
Chip Enable (E0, E1, E2)
These input signals are used to set the value that
is to be looked for on the three least significant bits
(b3, b2, b1) of the 7-bit Device Select Code. These
inputs must be tied to V
Device Select Code.
Write Control (WC
This input signal is useful for protecting the entire
contents of the memory from inadvertent write operations. Write operations are disabled to the entire memory array when Write Control (WC
driven High. When unconnected, the signal is internally read as V
IL
lowed.
When Write Control (WC
Select and Address bytes are acknowledged,
Data bytes are not acknowledged.
or VSS, to establish the
CC
)
) is
, and Write operations are al-
) is driven High, Device
Figure 4. Maximum R
20
16
12
8
Maximum RP value (kΩ)
4
0
101000
Value versus Bus Capacitance (C
L
fc = 100kHz
fc = 400kHz
100
C
(pF)
BUS
) for an I2C Bus
BUS
MASTER
V
CC
R
SDA
SCL
R
C
BUS
L
C
BUS
AI01665
L
3/25
M24256-B, M24128-B
Figure 5. I2C Bus Protocol
SCL
SDA
SCL
SDA
SCL
SDA
START
Condition
START
Condition
123789
MSB
123789
MSBACK
SDA
Input
SDA
Change
STOP
Condition
ACK
STOP
Condition
AI00792B
Table 2. Device Select Code
Device Type Identifier
1
Chip Enable Address
b7b6b5b4b3b2b1b0
Device Select Code1010E2E1E0RW
Note: 1. The most significant bit, b7, is sent first.
2. E0 , E 1 and E2 are comp ared against the respective ext ernal pins on the memory device.
2
RW
Table 3. Most Significant ByteTable 4. Least Significant Byte
C protocol. This is summarized in Figure 5. Any device that sends data on
to the bus is defined to be a transmitter, a nd any
device that reads the data to be a receiver. The
device that controls the data transfer is kn own as
the bus master, and the other as the slave device.
A data transfer can only be initiated by the bus
master, w h ic h will also provide t he s er ial clock for
synchronization. The M24xxx-B d evice i s a lways a
slave in all communication.
Start Condition
Start is identified by a falling edge of Serial Data
(SDA) while Serial Clock (SCL) is stable in the
High state. A Start condition must precede any
data transfer command. The devi ce continuously
monitors (except duri ng a Write cycle ) Se rial Data
(SDA) and Serial Clock (SCL) for a Start condition,
and will not respond unless one is give n.
Stop Condition
Stop is identified by a rising edg e of Serial Data
(SDA) while Serial Clock (SCL) is stable and driven High. A Stop condition terminates communication between the device and the bus master. A
Read command that is followed by NoAck can be
followed by a Stop condition to force the device
into the Stand-by mode. A Stop condition at the
end of a Write command triggers the internal EEPROM Wr ite cycle .
Acknowledge Bit (ACK)
The acknowledge bit is used to indicate a successful byte transfer. The bus transmitter, whether it be
bus master or slave device, releases Serial Data
(SDA) after sending eight bits of data. During the
th
clock pulse period, the receiver pulls Serial
9
Data (SDA) Low to acknowledge the receipt of the
eight data bits.
Data Input
During data input, the device samples Serial Data
(SDA) on the rising edge of Serial Clock (SCL).
For correct device operation, Serial Data (SDA)
must be stable during the rising edge of Serial
Clock (SCL), and the Serial Data (SDA) signal
only
must change
when Serial Clock (SCL) is driv-
en Low.
Memory Addressing
To start communication betwee n the bus master
and the slave device, the bus mas ter mus t initiate
a Start condition. Following this, the bu s master
sends the Device Select Code, shown in Tabl e 2
(on Serial Data (SDA), most significant bit first).
The Device Select Code consists of a 4-bit Device
Type Identifier, and a 3-bit Chip Enable “Address”
(E2, E1, E0). To address the memory array, the 4bit Device Type Identifier is 1010b.
Up to eight memory devices can be connected on
a single I
2
C bus. Each one is given a uniq ue 3-bit
code on the Chip Enable (E0, E1, E2) inputs.
When the Device Select Code is received on Serial Data (SDA), the device only responds if the Chip
Enable Address is the same as the value on the
Chip Enable (E0, E1, E2) inputs.
th
The 8
bit is the Read/Write bit (RW). This bit is
set to 1 for Read and 0 for Write operations.
If a match occurs on the Device Select code, the
corresponding device gives an acknowledgment
on Serial Data (SDA) during the 9
th
bit time. If the
device does not match the Device Select code, it
deselects itself from the bus, and goes into Standby mode.
Table 5. Operating Modes
ModeRW bit
Current Address Read1X1START, Device Select, RW
Random Address Read
Sequential Read1X
Byte Write0V
Page Write0V
Note: 1. X = V
IH
or V
.
IL
0X
1XreSTART, Device Select, RW
WC
1
IL
IL
BytesInitial Sequence
1
1Similar to Current or Random Address Read
≥
1START, Device Select, RW = 0
64START, Device Select, RW
≤
START, Device Select, RW
= 1
= 0, Address
= 1
= 0
5/25
M24256-B, M24128-B
Figure 6. Wri te Mo de S e qu e nces with WC=1 (data wri te inhibi ted)
WC
ACKACKACKNO ACK
BYTE WRITEDEV SELBYTE ADDRBYTE ADDRDATA IN
R/W
START
WC
ACKACKACKNO ACK
PAGE WRITEDEV SELBYTE ADDRBYTE ADDRDATA IN 1
R/W
START
WC (cont'd)
NO ACKNO ACK
PAGE WRITE
(cont'd)
DATA IN N
STOP
slot), either at the end of a Byte Write or a Page
Write Operations
Following a Start condition the bus mast er sends
a Device Select Code with the RW
bit rese t to 0 .
The device acknowledges this, as shown in Figure
7, and waits for two address bytes. The device responds to each address byte with an acknowledge
bit, and then waits for the data byte.
Writing to the memory may be inhibited if Write
Control (WC
with Write Control (WC
) is driven High. Any Write instruction
) driven High (during a period of time from the Start condition until the end of
the two address bytes) will not modify the memory
contents, and the accompanying data bytes are
not
acknowledged, as shown in Figure 6.
Each data byte in the m emory has a 16-bit (two
byte wide) address. The Most Significant Byte (Table 3) is sent first, followed by t he Least Significant
Byte (Table 4). Bits b15 to b0 form t he add ress of
the byte in memory.
When the bus mast er generate s a Stop con dition
immediately after the Ack bi t (in t he “10
th
bit” time
Write, the internal memory Write cycle is triggered.
A Stop condition at any other time slot does not
trigger the internal Write cycle.
During the internal Write cycle, Serial Data (SDA)
is disabled internally, and the devi ce does not respond to any requests.
Byte Write
After the Device Select code and the address
bytes, the bus master sends one dat a byte. If the
addressed location is Write-protected, by Write
Control (WC
with NoAck, and the location is not modified. If, instead, the addressed location is not Write-protected, the device replies with Ack. The bus ma ster
terminates the transfer by generating a S top condition, as shown in Figure 7.
Page Write
The Page Write mode allows u p to 64 by tes to be
written in a single Write cycle, provided that they
are all located in the same ’row’ in the memory:
that is, the most significant m emory address bits
STOP
DATA IN 2
AI01120C
) being driven High, the device replies
6/25
M24256-B, M24128-B
(b14-b6 for M24256-B, and b13-b6 for M24128-B)
are the same. If more bytes are sent than will fit up
to the end of the row, a condition known as ‘rollover’ occurs. This should be avoided, as data
starts to become overwritten in an implementation
dependent way.
The bus master sends fr om 1 to 64 bytes of data,
each of which is acknowledged by the device if
Figure 7. Wri te Mo de S e qu e nces with W
WC
BYTE WRITEDEV SELBYTE ADDRBYTE ADDRDATA IN
START
WC
C=0 (data write enabled)
ACK
R/W
ACKACKACKACK
Write Control (WC) is Low. If Write Control (WC) is
High, the contents of the addressed memory location are not modified, and each dat a byte is followed by a NoAck. After each by te is transferred,
the internal byte address counte r (the 6 least significant address bits only) is incremented. The
transfer is terminated by the bus master generating a Stop condition.
ACKACKACK
STOP
PAGE WRITEDEV SELBYTE ADDRBYTE ADDRDATA IN 1
R/W
START
WC (cont'd)
ACKACK
PAGE WRITE
(cont'd)
DATA IN N
STOP
DATA IN 2
AI01106C
7/25
M24256-B, M24128-B
Figure 8. Wri te Cy cle Pol l in g Fl owchart usin g AC K
WRITE Cycle
in Progress
START Condition
DEVICE SELECT
with RW = 0
ACK
NO
Returned
First byte of instruction
with RW = 0 already
decoded by the device
ReSTART
STOP
YES
Next
Operation is
Addressing the
Memory
DATA for the
WRITE Operation
Continue the
WRITE Operation
Minimizing System Delays by Polling On ACK
During the internal Write cycle, the device disconnects itself from the bus, and writes a copy of the
data from its internal latches to the memory cells.
The maximum Write time (t
) is shown in Tables
w
20 and 21, but the typical time is shorter. To make
use of this, a polling sequence can be used by the
bus master.
The sequence, as shown in Figure 8, is:
– Initial condition: a Write cycle is in progress.
YESNO
Send Address
and Receive ACK
START
Condition
YESNO
DEVICE SELECT
with RW = 1
Continue the
Random READ Operation
AI01847C
– Step 1: the bus master issues a Start condition
followed by a Device Select Code (the first byte
of the new instruction).
– Step 2: if the device is busy with the internal
Write cycle, no Ack will be returned and the bus
master goes back to Step 1. If the device has
terminated the internal Write cycle, it responds
with an Ack, indicating that the device is ready
to receive the second part of the instruction (the
first byte of this instruction having been sent
during Step 1).
8/25
Figure 9. Read Mode Sequences
M24256-B, M24128-B
CURRENT
ADDRESS
READ
RANDOM
ADDRESS
READ
SEQUENTIAL
CURRENT
READ
SEQUENTIAL
RANDOM
READ
ACK
DEV SELDATA OUT
R/W
START
ACK
DEV SEL *BYTE ADDRBYTE ADDR
R/W
START
ACKACKACKNO ACK
DEV SELDATA OUT 1
R/W
START
ACKACKACK
DEV SEL *BYTE ADDRBYTE ADDR
NO ACK
STOP
ACKACKACK
DEV SEL *DATA OUT
R/W
START
DATA OUT N
STOP
ACKACK
DEV SEL *DATA OUT 1
NO ACK
STOP
R/W
START
ACKNO ACK
DATA OUT N
STOP
Note: 1. The sev en m ost signific ant bits of the D evice Select Code of a Rando m Read (in the 1st and 4th bytes) must be ide n tical .
START
R/W
AI01105C
Current Address Read
Read Operations
Read operations are performed independently of
the state of the Write Control (WC
) signal.
Random Address Read
A dummy Write is performed to load the address
into the address counter (as shown in Figure 9) but
without
sending a Stop condition. Then, the bus
master sends another Start condition, and repeats
the Device Select Code, with t he RW
bit set to 1.
The device acknowledges this, and outputs the
contents of the addressed byte. The bus master
must
not
acknowledge the byte, and terminates
the transfer with a Stop condition.
The device has an internal address counter which
is incremented each time a byte is read. For the
Current Address Read operation, following a Start
condition, the bus master only sends a Device Select Code with the RW
bit set to 1. The device acknowledges this, an d outputs the byt e address ed
by the internal address counter. The counter is
then incremented. The bus master term inates t he
transfer with a Stop condition, as shown i n Figure
9,
without
acknowledging the byte.
Sequenti a l Read
This operation can be used after a Current Address Read or a Random Address Read. The bus
9/25
M24256-B, M24128-B
master
does
acknowledge the data byte output,
and sends additional clock pulses so that the device continues to output the next byte in sequence.
To terminate the stream of bytes, the bus master
must
not
acknowledge the last byte, and
must
generate a Stop condition, as shown in Figure 9.
The output data comes from consecutive address-
es, with the internal address counter automatically
incremented after each byte output. After the last
memory address, the address counter ‘rolls-over’,
and the device continues to output data from
memory address 00h.
Acknowledge in Read Mode
For all Read commands, the device waits, after
each byte read, for an acknowledgment during the
th
bit time. If the bus master does not drive Serial
9
Data (SDA) Low during this time, the device terminates the data transfer and s witches to its St andby mode.
10/25
M24256-B, M24128-B
MAXI MUM RATIN G
Stressing the device above the rating listed in t he
Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress
ratings only and operation of the device at t hese or
any other conditions ab ove those i ndicated in t he
Operating sections of this specificat ion is not im-
plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality documents.
1
1
260
235
235
°C
V
IO
V
CC
V
ESDElectrostatic Discharge Voltage (Human Body model)
Note: 1. IPC/JEDEC J-STD-020A
2. JEDEC Std JE SD22-A114A (C1=100 pF, R1=15 00
Input or Output range
Supply Voltage
-V voltage range
all other voltage ranges
-V voltage range
all other voltage ranges
2
Ω, R2=500 Ω)
–0.6
–0.6
–0.3
–0.3
4.2
6.5
4.2
6.5
–30003000V
V
V
11/25
M24256-B, M24128-B
DC AND AC PARAMETERS
This section summarizes the operat ing and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC Characteristic tables that follow are derived from tests performed under the Measure-
Table 7. Operating Conditions (M24xxx-B)
SymbolParameterMin.Max.Unit
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit matc h the measurem ent
conditions when relying on the quoted parameters.
Load Capacitance100pF
Input Rise and Fall Times50ns
to 0.8V
Input Levels
Input and Output Timing Reference Levels
0.2V
0.3V
CC
to 0.7V
CC
CC
CC
V
V
Figure 10. AC Measurement I/O Waveform
M24256-B, M24128-B
Input Levels
0.8V
CC
0.2V
CC
Timing Reference Levels
Table 13. Input Parameters
Symbol
C
IN
C
IN
Z
L
Z
H
t
NS
Note: 1. TA = 25 °C, f = 400 kHz
2. Sampled only, not 100% tested.
Input Capacitanc e (SDA)8pF
Input Capacitance (other pins)6pF
Input Impedance
(E2, E1, E0, WC
Input Impedance
(E2, E1, E0, WC
Pulse width ignored
(Input Filter on SCL and SDA)
Parameter
1,2
)
)
Test ConditionMin.Max.Unit
< 0.5 V30k
V
IN
> 0.7V
V
IN
CC
Single glitch100ns
Table 14. M24xxx-BV Power-Up Timing and Vth Threshol d
Symbol
Parameter
1
Test ConditionMin.Max.Unit
Input and Output
0.7V
CC
0.3V
CC
AI00825B
500k
Ω
Ω
t
V
Note: 1. These pa rameters are characterized only.
Time delay to Read or Write instruction200
PU
Threshold Voltage1.41.6V
th
Table 15. DC Characteristics (M24xxx-B)
SymbolParameter
Input Leakage Current
I
LI
(SCL, SDA)
I
I
I
CC1
V
V
V
Output Leakage CurrentV
LO
Supply Current
CC
Stand-by Supply Current
Input Low Voltage (SCL, SDA)–0.30.3V
IL
Input Low Voltage
(E2, E1, E0, WC
Input High Voltage
IH
(E2, E1, E0, SCL, SDA, WC
Output Low VoltageIOL = 3 mA, VCC = 5 V0.4V
OL
)
)
Test Condition
(in addition to those in Table 7)
VIN= VSS orV
CC
device in Stand-by mode
= VSS or V
OUT
V
=5V, fc=400kHz (rise/fall time < 30ns)
CC
V
= VSS orVCC, VCC= 5 V
IN
SDA in Hi-Z± 2µA
CC,
Min.Max.Unit
± 2µA
2mA
10µA
CC
–0.3
0.7V
CC
0.5
VCC+1
s
µ
V
V
V
13/25
M24256-B, M24128-B
Table 16. DC Characteristics (M24xxx-BV)
SymbolParameter
Input Leakage Current
I
LI
(SCL, SDA)
Test Condition
(in addition to those in Table 8)
VIN= VSS orV
CC
device in Stand-by mode
Min.
Max.Unit
± 2µA
I
I
I
CC1
Output Leakage CurrentV
LO
Supply Current
CC
Stand-by Supply Current
V
CC
Input Low Voltage (SCL, SDA)–0.30.3V
V
IL
Input Low Voltage
(E2, E1, E0, WC
V
V
Input High Voltage
IH
(E2, E1, E0, SCL, SDA, WC
Output Low VoltageIOL = 2.1 mA, VCC = 2.7 V0.4V
OL
)
)
Table 17. DC Characteristics (M24xxx-BW)
SymbolParameter
Input Leakage Current
I
LI
(SCL, SDA)
I
I
I
CC1
V
Output Leakage CurrentV
LO
CC
Supply Current
V
CC
Stand-by Supply Current
Input Low Voltage (SCL, SDA)–0.3
IL
Input Low Voltage
(E2, E1, E0, WC
)
= VSS or V
OUT
SDA in Hi-Z± 2µA
CC,
=2.7V, fc=400kHz (rise/fall time < 30ns)
V
= VSS orVCC, VCC= 2.7 V
IN
Test Condition
(in addition to those in Table 9)
VIN= VSS orV
CC
device in Stand-by mode
= VSS or V
OUT
SDA in Hi-Z± 2µA
CC,
=2.5V , fc=400kHz (rise/fall time < 30ns)
V
= VSS orVCC, VCC= 2.5 V
IN
2mA
2µA
CC
–0.3
0.7V
Min.
CCVCC
0.5
+0.6
Max.Unit
± 2µA
1mA
2µA
0.3V
CC
–0.30.5V
V
V
V
V
14/25
V
V
Input High Voltage
IH
(E2, E1, E0, SCL, SDA, WC
Output Low VoltageIOL = 2.1 mA, VCC = 2.5 V0.4V
OL
)
0.7V
CC
VCC+1V
Table 18. DC Characteristics (M24xxx-BR)
SymbolParameter
Input Leakage Current
I
LI
(SCL, SDA)
Test Condition
(in addition to those in Table 10)
VIN= VSS or V
CC
device in Stand-by mode
M24256-B, M24128-B
Min.
Max.Unit
± 2µA
Output Leakage CurrentV
LO
Supply Current
CC
Stand-by Supply Current
V
CC
I
I
I
CC1
Input Low Voltage (SCL, SDA)–0.3
V
IL
Input Low Voltage
(E2, E1, E0, WC
V
V
Note: 1. This is Preliminary Data
Input High Voltage
IH
(E2, E1, E0, SCL, SDA, WC
Output Low Voltage
OL
)
)
Table 19. DC Characteristics (M24xxx-BS)
SymbolParameter
Input Leakage Current
I
LI
(SCL, SDA)
Output Leakage CurrentV
LO
CC
Supply Current
V
CC
Stand-by Supply CurrentVIN= VSS orVCC, VCC= 1.8 V
I
I
I
CC1
= VSS orV
OUT
SDA in Hi-Z± 2µA
CC,
=1.8V , fc=100kHz (rise/fall time < 30ns)
V
= VSS orVCC, VCC= 1.8 V
IN
I
= 0.7 mA, VCC = 1.8 V
OL
Test Condition
(in addition to those in Table 11)
VIN= VSS or V
CC
device in Stand-by mode
= VSS orV
OUT
SDA in Hi-Z± 2µA
CC,
=1.8V , fc=400kHz (rise/fall time < 30ns)
1
0.8
1
1
0.3 V
CC
–0.30.5V
CC
VCC+1
1
0.2
Max.Unit
0.7V
Min.
± 2µA
1
0.5
1
1
mA
µA
V
V
V
mA
µA
Input Low Voltage (SCL, SDA)–0.3
V
IL
Input Low Voltage
(E2, E1, E0, WC
V
V
Note: 1. This is Preliminary Data
Input High Voltage
IH
(E2, E1, E0, SCL, SDA, WC
Output Low Voltage
OL
0.3 V
)
)
I
= 0.7 mA, VCC = 1.8 V
OL
–0.30.5V
CC
VCC+0.6
0.7V
0.2
V
CC
V
1
V
15/25
M24256-B, M24128-B
Table 20. AC Characteristics (M24xxx-B, M24xxx-BW)
Test conditions specified in Table 12 and Table 7 or 9
SymbolAlt.ParameterMin.Max.Unit
f
C
t
CHCL
t
CLCH
t
CH1CH2
t
CL1CL2
2
t
DH1DH2
2
t
DL1DL2
t
DXCX
t
CLDX
t
CLQX
3
t
CLQV
1
t
CHDX
t
DLCL
t
CHDH
t
DHDL
t
W
Note: 1. For a reST A RT condition, or fo l l o wing a Write cycl e.
2. Sampled only, not 100% tested.
3. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA.
4. The Write Time of 5 ms on ly applies to M24128-B an d M24 128-BW de vices bearing the process letter “B” in the package marking
(on the top side of the package, on the right side), otherwise the Write Time is 10 ms. For further details, please contact your nearest
ST sales offic e, and ask for a c opy of the M24128 Product Change Notice.
SDA Fall Time20300ns
Data In Set Up Time100ns
Data In Hold Time0ns
Data Out Hold Time200ns
Clock Low to Next Data Valid (Access Time)200900ns
Start Condition Set Up Time600ns
Start Condition Hold Time600ns
Stop Condition Set Up Time600ns
Time between Stop Condition and Next Start
Condition
Write Time
1300ns
10
4
or
5
ms
16/25
M24256-B, M24128-B
Table 21. AC Characteristics (M24xxx-BV, M24xxx-BR, M24xxx-BS )
Test conditions specified in Table 12 and Table 8 or 10 or 11
SymbolAlt.ParameterMin.Max.Unit
f
C
t
CHCL
t
CLCH
t
CH1CH2
t
CL1CL2
2
t
DH1DH2
2
t
DL1DL2
t
DXCX
t
CLDX
t
CLQX
3
t
CLQV
1
t
CHDX
t
DLCL
t
CHDH
t
DHDL
t
W
Note: 1. For a reST A RT condition, or fo l l o wing a Write cycl e.
2. Sampled only, not 100% tested.
3. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA.
SDA Fall Time20300ns
Data In Set Up Time100ns
Data In Hold Time0ns
Data Out Hold Time200ns
Clock Low to Next Data Valid (Access Time)200900ns
Start Condition Set Up Time600ns
Start Condition Hold Time600ns
Stop Condition Set Up Time600ns
Time between Stop Condition and Next Start
Note: 1. Availa bl e only on reques t ( by preference, please use M N, SO8 150 mil widt h, package inst ead.
2. Avai l able for the M24256-B onl y.
3. Avai l able for the M24128-B onl y.
4. M 24256- B an d M2 425 6-BW beari ng t he proc ess let ter “ V” in th e pac kage mark ing, a nd M 24 128-B and M 241 28- BW b ear ing the
process letter “B” in the package marking (on the top side of the package, on the right side), guarantee more than 1 million Erase/
Write cycle endurance. For more in formation about thes e devices , and thei r device i dentificati on, please contact your neares t ST
sales offi ce, and ask for the Product Change Notice.
For a list of available options (speed, package,
etc.) or for further information on any aspect of this
device, please contact your nearest ST Sales O ffice.
23/25
M24256-B, M24128-B
REVISION HIST ORY
Table 23. Document Revision History
DateRev.Description of Revision
28-Dec-19992.1TSSOP8 package added
24-Feb-20002.2
22-Nov-20002.3-V voltage range added
30-Jan-20012.4
01-Jun-20012.5
E2, E1, E0 must be tied to Vcc or Vss
Low Pass Filter Time Constant changed to Glitch Filter
-V voltage range changed to 2.5V to 3.6V
Lead Soldering Temperature in the Absolute Maximum Ratings table amended
Write Cycle Polling Flow Chart using ACK illustration updated. SO8(wide) package added
References to PSDIP8 changed to PDIP8, and Package Mechanical data updated
-R voltage range added. Package mechanical data updated for TSSOP8 and TSSOP14
packages according to JEDEC\MO-153
Document promoted from “Preliminary Data” to “Full Data Sheet”
16-Oct-20012.6
09-Nov-20012.7Specification of Test Condition for Leakage Currents in the DC Characteristics table improved
21-Mar-20022.8
18-Oct-20023.0
20-Nov-20023.1
TSSOP14 package removed
Absolute Max Ratings and DC characteristics updated for M24256-BV
1 million Erase/Write cycle endurance for M24256-B and M24256-BW products with process
letter "V"
Document reformatted. Parameters changed are: 1 million Erase/Write cycle endurance and 5
ms write time for M24128-B and M24128-BW products with process letter "B".
Superfluous (and incorrectly present) 100kHz AC Characteristics table for M24256-BR
removed.
24/25
M24256-B, M24128-B
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