ST LIS332AR User Manual

3-axis ±2 g analog-output ultracompact accelerometer
Features
Single voltage supply operation
High stability over temperature
Ratiometric output voltage
Power-down mode
Embedded self-test
10000 g high shock survivability
ECOPACK
(see Section 7)
®
RoHS and “Green” compliant
LIS332AR
MEMS motion sensor:
LGA-16
circuit which is trimmed to better match the sensing element characteristics.
(3x3x1.0mm)
Applications
Tilting applications
Free-fall detection
Gaming
Anti-theft systems
Inertial navigation and motion tracking
Description
The LIS332AR is a miniaturized low-power 3-axis linear accelerometer belonging to the “nano” family of ST motion sensors. It includes a sensing element and an IC interface to provide an analog signal to the external world.
The sensing element, capable of detecting the acceleration, is manufactured using a dedicated process developed by ST to produce motion sensors and actuators in silicon.
The IC interface is manufactured using a CMOS process that allows the design of a dedicated

Table 1. Device summary

Order code Temperature range [°C] Package Packing
The LIS332AR has a full-scale of ±2 g, and is capable of measuring accelerations over a maximum bandwidth of 2.0 kHz. The device bandwidth may be reduced by using external capacitors. The self-test capability allows the user to check the functioning of the sensor in the final application.
ST is already in the field with several hundred million sensors which have received excellent acceptance from the market in terms of quality, reliability and performance.
The LIS332AR is provided in a plastic land grid array (LGA) package.
Several years ago ST successfully pioneered the use of this package for accelerometers. Today, ST has the widest manufacturing capability and strongest expertise in the world for production of sensors in plastic LGA packages.
LIS332AR -40 to +85 LGA-16 Tray
LIS332ARTR -40 to +85 LGA-16 Tape and reel
February 2010 Doc ID 16931 Rev 1 1/14
www.st.com
14
Contents LIS332AR
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Pin connections and description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Mechanical and electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Mechanical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.1 Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2 Zero-g level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.3 Self-test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.4 Output impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 Sensing element . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2 IC interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.3 Factory calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Application hints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6.1 Soldering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6.2 Output response vs. orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 16931 Rev 1
LIS332AR Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

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1.1 Pin connections and description

Figure 2. Pin connection

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Doc ID 16931 Rev 1 3/14
Block diagram and pin description LIS332AR

Table 2. Pin description

Pin # Pin name Function
1 NC Internally not connected
2 res Connect to Vdd
3 NC Internally not connected
4 ST Self-test (logic 0: normal mode; logic 1: self-test mode)
5 PD Power-down (logic 0: normal mode; logic 1: power-down mode)
6 GND 0 V supply
7 NC Internally not connected
8 NC Internally not connected
9 Voutz Output voltage Z channel
10 NC Internally not connected
11 Vouty Output voltage Y channel
12 NC Internally not connected
13 Voutx Output voltage X channel
14 NC Internally not connected
15 res Connect to Vdd
16 Vdd Power supply
4/14 Doc ID 16931 Rev 1
LIS332AR Mechanical and electrical specifications

2 Mechanical and electrical specifications

2.1 Mechanical characteristics

-Vout
(a)
.
(1)
Max. Unit
±2 g
0.2*Vdd –5%
0.2*Vdd
0.2*Vdd + 5%
±2 %
60 700 mV
60 700 mV
60 700 mV
-40 +85 °C
(Vst=logic 0)
LOAD
), with C
LOAD
>2.5 nF
@ Vdd=3 V, T=25 °C unless otherwise noted

Table 3. Mechanical characteristics

Symbol Parameter Test condition Min. Typ.
(4)
(4)
(6),(7)
(2)
Delta from +25 °C ±0.01 %/°C
T=25 °C Vdd/2-6% Vdd/2 Vdd/2+6% V
Delta from +25 °C ±0.2 mg/°C
Best fit straight line ±0.5 % FS
Vdd=3 V 100 µg/
T=25 °C Vdd=3 V X axis
T=25 °C Vdd=3 V Y axis
T=25 °C Vdd=3 V Z axis
All axes 2.0 kHz
(8)
(Vst=logic 1)
=2.0 kHz. Sensor bandwidth=1/(2*π*32kΩ*C
RES
Ar Acceleration range
So Sensitivity
SoDr
Sensitivity change vs. temperature
(3)
Voff Zero-g level
OffDr
Zero-g level change vs. temperature
NL Non linearity
CrossAx Cross-axis
Acceleration noise
An
density
Self-test output
Vt
voltage change
Fres
Top
Sensing element resonant frequency
Operating temperature range
(5)
Wh Product weight 30 mgram
1. Typical specifications are not guaranteed
2. Guaranteed by wafer level test and measurement of initial offset and sensitivity
3. Zero-g level and sensitivity are ratiometric to supply voltage
4. Guaranteed by design
5. Contribution to the measured output of an inclination/acceleration along any perpendicular axis
6. “Self-test output voltage change” is defined as Vout
7. “Self-test output voltage change” varies cubically with supply voltage
8. Minimum resonance frequency F
V/g
Hz
a. The product is factory calibrated at 3 V. The operational power supply range is specified in Table 4. Since the
device is ratiometric, Voff, So and Vt parameters vary with supply voltage.
Doc ID 16931 Rev 1 5/14
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