
Inverting Input 2
Non-inverting Input 2
Non-inverting Input 1
CC
V
-
CC
V
1
2
3
4
8
5
6
7
9
10
11
12
13
14
+
Output 3
Output 4
Non-inverting Input 4
Inverting Input 4
Non-inverting Input 3
Inverting Input 3
-
+
-
+
-
+
-
+
Output 1
Inverting Input 1
Output 2
LF147 - LF247
LF347
WIDE BAND WIDTH
QUAD J-FET OPERATIONAL AMPLIFIERS
■ LOW POWER CONSUMPTION
■ WIDE COMMON-MODE (UP TO V
DIFFERENT IAL VOLTAGE RANGE
CC
+
) AND
■ LOW INPUT BIAS AND OFF SET CURRE NT
■ OUTPUT SHORT-CIRCUIT PROTECTION
■ HIGH INPUT IMPEDANCE J–FET INPUT
STAGE
■ INTERNAL FREQUENCY COMPENSATION
■ LATCH UP FREE OPERATION
■ HIGH SLEW RATE : 16V/µs (typ)
DESCRIPTION
These circuits are high speed J–FE T input quad
operational amplifiers incorporating well matched,
high voltage J–FET and bipolar transistors in a
monolithic integrated circuit.
The devices feature high slew rates, low input bias
and offset currents, and lo w offset voltage temperature coefficient.
N
DIP14
(Plastic Package)
D
SO14
(Plastic Micropackage)
ORDER CODE
Part Number Temperature Range
LF147 -55°C, +125°C
LF247 -40°C, +105°C
LF347 0°C, +70°C
Example : LF347IN
N = Dual in Line Package (DIP)
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
Package
ND
••
••
••
PIN CONNECTIONS (top view)
March 2001
1/10

LF147 - LF247 - LF347
SCHEMATIC DIAGRAM (each amplifier)
V
CC
Non-inverting input
Inverting input
30k
100
100
W
W
200
W
Output
8.2k
1.3k
35k
V
CC
1.3k
35k
100
W
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter LF147 LF247 LF347 Unit
CC
1)
2)
+
and V
±18 V
±15 V
3)
4)
-
.
CC
±30 V
Infinite
V
P
Supply voltage - note
CC
V
Input Voltage - note
i
V
Differential Input Voltage - note
id
Power Dissipation 680 mW
tot
Output Short-circuit Duration - note
T
T
1. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference
2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less.
3. Differential voltages are the non-inverting input terminal w ith respect to the inverting input term inal.
4. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating
Operating Free-air Temperature Range -55 to +125 -40 to +105 0 to +70 °C
oper
Storage Temperature Range -65 to +150 °C
stg
level is the midpoint between V
is not exceeded
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LF147 - LF247 - LF347
ELECTRICAL CHARACTERISTICS
V
= ±15V, T
CC
Symbol Parameter Min. Typ. Max. Unit
Input Offset Voltage (Rs = 10kΩ)
V
io
DV
Input Offset Voltage Drift 10
io
Input Offset Current - note 1)
I
io
Input Bias Current - note 1
I
ib
Large Signal Voltage Gain (RL = 2kΩ, Vo = ±10V) ,
A
vd
Supply Voltage Rejection Ratio (R
SVR
Supply Current, Per Amp, no Load
I
CC
V
Input Common Mode Voltage Range
icm
Common Mode Rejection Ratio (R
CMR
Output Short-Circuit Current
I
OS
Output Voltage Swing
±V
opp
Slew Rate
SR
Rise Time
t
r
Overshoot
K
ov
Gain Bandwidth Product
GBP
R
Input Resistance
i
Total Harmonic Distortion
THD
Equivalent Input Noise Voltage (RS = 100Ω, f = 1KHz)
e
n
m Phase Margin 45 Degrees
∅
V
1. The input bias currents ar e junction leakage currents which approximately double for every 10°C increase in the junction temperature.
Channel Separation ( Av = 100)
o1/Vo2
= +25°C (unless otherwise specified)
amb
T
= 25°C
amb
T
≤ T
amb
= 25°C
≤ T
amb
= 25°C
≤ T
amb
= 25°C
≤ T
amb
= 25°C
≤ T
= 25°C
≤ T
amb
amb
≤ T
≤ T
≤ T
≤ T
≤ T
≤ T
max
max
max
max
max
max
= 10k
S
50
25
Ω)
80
80
T
T
T
T
T
T
min
amb
min
amb
min
amb
min
T
T
T
amb
T
amb
min
min
±11 +15
= 10k
Ω)
T
= 25°C
amb
T
≤ T
min
T
amb
T
≤ T
min
T
amb
T
≤ T
min
= 10V, RL = 2kΩ, CL = 100pF, T
V
i
= 20mV, RL = 2kΩ,CL = 100pF, T
V
i
V
= 20mV, RL = 2kΩ, CL = 100pF, T
i
f =100kHz, T
f =1kHz, A
T
amb
≤ T
amb
max
= 25°C
≤ T
amb
max
= 25°C RL = 2k
≤ T
amb
max
= 25°C, Vin = 10mV, RL =2kΩ, CL = 100pF
amb
= 20dB, RL = 2kΩ, CL = 100pF
v
= 25°C, VO = 2Vpp 0.01
S
70
70
10
10
Ω
R
= 10k
Ω
L
RL = 2k
R
= 25°C, unity gain
amb
amb
amb
Ω
= 10k
Ω
L
= 25°C, unity gain
= 25°C, unity gain
10
12
10
12
12 16
2.5 4
mV
310
13
V/°C
µ
5100
4pAnA
20 200
20
V/mV
200
86
mA
1.4 2.7
2.7
-12
86
mA
40 60
60
12
13.5
V/µs
0.1
10
MHz
12
10
nV
15
----------- -
120 dB
pA
nA
dB
V
dB
V
µ
%
Ω
%
Hz
s
3/10