L6728D is a single-phase step-down controller
with integrated high-current drivers that provides
complete control logic and protection to simplify
the design of general DC-DC converters by using
a compact DFN10 package.
Device flexibility allows the management of
conversions with power input (V
1.5 V, and device supply voltage ranging from 5 V
to 12 V.
The L6728D provides a simple control loop with
voltage mode EA. The integrated 0.8 V reference
allows output voltages regulation with ±0.8%
accuracy over line and temperature variations.
The oscillator is internally fixed to 300 kHz.
The L6728D provides programmable dual level
overcurrent protection, as well as overvoltage and
undervoltage protection. Current information is
monitored across the low-side MOSFET R
eliminating the need for expensive and spaceconsuming sense resistors.
A PGOOD output easily provides real-time
information on output voltage status, through the
VSEN dedicated output monitor.
Typical application circuit and block diagramL6728D
1 Typical application circuit and block diagram
1.1 Application circuit
Figure 1.Typical application circuit of the L6728D
C
HF
VIN = 1.5V to 12V
L
C
BULK
Vout
C
OUT
LOAD
VCC = 5V to 12V
PGOOD
C
P
R
OS
C
DEC
R
PG
10
PGOOD
7
COMP
C
F
R
F
/ DIS
8
FB
VSEN
R
9
FB
6
VCC
L6728A
L6728D
GND
BOOT
UGATE
PHASE
LGATE
/ OC
5
R
1
3
2
4
OCSET
HS
LS
L6728A Reference Schematic
L6728D
1.2 Block diagram
Figure 2.Block diagram of the L6728D
VSEN
PGOOD
R
OS
V
MONITOR
OUT
300 kHz
OSCILLATOR
L6728A
L6728D
CLOCK
R
FB
VCC
CONTROL LOGIC
PROTECTIONS
ERROR AMPLIFIER
V
OC
OCTH
&
BOOT
CROSS CONDUCTION
ADAPTIVE ANTI
HS
UGATE
PHASE
PWM
VCC
LS
LGATE
/ OC
GND
+
0.8V
I
OCSET
/ DIS
COMP
4/33 Doc ID 16498 Rev 1
FB
L6728DPin description and connection diagram
2 Pin description and connection diagram
Figure 3.Pin connection (top view)
L6728D
2.1 Pin descriptions
Table 2.Pins description
Pin n°NameFunction
1BOOT
HS driver supply. Connect through a capacitor (100 nF) to the floating node (LS-Drain) pin
and provide necessary bootstrap diode from VCC.
HS driver return path, current-reading and adaptive-dead-time monitor. Connect to the LS
2PHASE
drain to sense
R
DS(on)
drop to measure the output current. This pin is also used by the
adaptive-dead-time control circuitry to monitor when HS MOSFET is OFF.
3UGATEHS driver output. Connect directly to HS MOSFET gate.
LGATE: LS driver output. Connect directly to LS MOSFET gate. OC: Overcurrent threshold
set. During a short period of time following VCC rising over the UVLO threshold, a 10 μA
current is sourced from this pin. Connect to GND with an R
4LGATE / OC
program the OC threshold. The resulting voltage at this pin is sampled and held internally as
the OC set point. The maximum programmable OC threshold is 0.55 V. A voltage greater than
0.6 V activates an internal clamp and causes the OC threshold to be set at the maximum
value.
5GND
6VCC
All internal references, logic and drivers are connected to this pin. Connect to the PCB ground
plane.
Device and driver power supply. Operating range from 5 V to 12 V. Filter with at least 1 µF
MLCC to GND.
COMP: Error amplifier output. Connect with an R
7COMP / DIS
control loop. DIS: The device can be disabled by pushing this pin lower than 0.75 V (typ). By
setting the pin free, the device is enabled again.
resistor greater than 5 kΩ to
OCSET
- CF // CP to FB to compensate the device
F
8FB
Error amplifier inverting input. Connect with a resistor R
output resistor divider may be used to regulate voltages higher than the reference.
to the output regulated voltage. An
FB
Regulated voltage sense pin for OVP and UVP protection and PGOOD. Connect to the output
9VSEN
regulated voltage, or to the output resistor divider if the regulated voltage is higher than the
reference.
10PGOOD
Open drain output set free after SS has finished and pulled low when VSEN is outside the
relative window. Pull up to a voltage equal or lower than VCC. If not used it can be left
floating.
Doc ID 16498 Rev 15/33
Thermal dataL6728D
3 Thermal data
Table 3.Thermal data
SymbolParameterValue Unit
R
R
T
T
P
th(JA)
th(JC)
MAX
STG
T
J
TOT
Thermal resistance junction-to-ambient
(device soldered on 2s2p, 67 mm x 69 mm board)
45°C/W
Thermal resistance junction-to-case 5°C/W
Maximum junction temperature150°C
Storage temperature range-40 to 150°C
Junction temperature range-40 to 125°C
Maximum power dissipation at TA = 25 °C2.25W
6/33 Doc ID 16498 Rev 1
L6728DElectrical specifications
4 Electrical specifications
4.1 Absolute maximum ratings
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
VCCto GND-0.3 to 15V
V
BOOT, VUGATE
V
PHASE
V
LGATE
to PHASE
to GND
to GND; t < 200 ns
to GND
to GND; t < 200 ns
to GND-0.3 to VCC+0.3V
FB, COMP, VSEN to GND-0.3 to 3.6V
PGOOD to GND-0.3 to VCC+0.3V
15
33
45
-5 to 18
-8 to 30
V
V
4.2 Electrical characteristics
VCC = 5 V to 12 V; TJ = 0 to 70 °C unless otherwise specified
Table 5.Electrical characteristics
SymbolParameterTest conditionsMin.Typ.Max.Unit
Supply current and power-ON
I
CC
I
BOOT
UVLO
Oscillator
F
SW
ΔV
OSC
d
MAX
Reference and error amplifier
A
GBWPGain-bandwidth product
SRSlew-rate
DISDisable thresholdCOMP falling0.700.85V
VCC supply currentUGATE and LGATE = OPEN6mA
BOOT supply currentUGATE = OPEN; PHASE to GND0.7mA
VCC Turn-ONVCC rising4.1V
Hysteresis0.2V
Main oscillator accuracy270300330kHz
PWM ramp amplitude1.4V
Maximum duty cycle80%
Output voltage accuracy-0.8-0.8%
0
DC gain
(1)
(1)
(1)
120dB
15MHz
8V/μs
Doc ID 16498 Rev 17/33
Electrical specificationsL6728D
Table 5.Electrical characteristics (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Gate drivers
I
UGATE
R
UGATE
I
LGATE
R
LGATE
HS source currentBOOT - PHASE = 5 V1.5A
HS sink resistanceBOOT - PHASE = 5 V1.1Ω
LS source currentVCC = 5 V1.5A
LS sink resistanceVCC = 5 V0.65Ω
Overcurrent protection
I
OCSET
V
OC_SW
OCSET current source
OC switch-over thresholdV
Sourced from LGATE pin, during OC
setting phase.
LGATE/OC
rising600mV
91011μA
Over and undervoltage protections
VSEN rising0.9701.0001.030V
OVPOVP threshold
un-latch, VSEN falling0.350.400.45V
UVPUVP thresholdVSEN falling0.5700.6000.630V
VSENVSEN bias currentSourced from VSEN100nA
PGOOD
Upper thresholdVSEN rising0.8600.8900.920V
PGOOD
Lower thresholdVSEN falling0.6800.7100.740V
V
PGOODL
1. Guaranteed by design, not subject to test.
PGOOD voltage lowI
= -4 mA0.4V
PGOOD
8/33 Doc ID 16498 Rev 1
L6728DDevice description
5 Device description
The L6728D is a single-phase PWM controller with embedded high-current drivers which
provides complete control logic and protection features for easy implementation of a general
DC-DC step-down converter. Designed to drive N-channel MOSFETs in a synchronous
buck topology, this 10-pin device provides a high level of integration to allow a reduction in
cost and size of power supply solutions, while also providing real-time PGOOD in a compact
DFN10 3x3 mm package.
The L6728D is designed to operate from a 5 V or 12 V supply. The output voltage can be
precisely regulated to as low as 0.8 V with ±0.8% accuracy over line and temperature
variations. The switching frequency is internally set to 300 kHz.
This device provides a simple control loop with a voltage-mode error amplifier. The error
amplifier features a 15 MHz gain-bandwidth product and 8 V/µs slew rate, allowing high
regulator bandwidth for fast transient response.
To prevent load damage, the L6728D provides protection against overcurrent, overvoltage,
undervoltage and feedback disconnection. The overcurrent trip threshold is programmable
using a resistor connected from Lgate to GND. Output current is monitored across the lowside MOSFET R
resistors. Output voltage is monitored through the dedicated VSEN pin.
, eliminating the need for expensive and space-consuming sense
DS(on)
The L6728D implements soft-start by increasing the internal reference in closed-loop
regulation. The low side-less feature allows the device to perform soft-start over a prebiased output, avoiding high current return through the output inductor and dangerous
negative spike at the load side.
The L6728D is available in a compact DFN10 3x3 mm package with exposed pad.
Doc ID 16498 Rev 19/33
Driver sectionL6728D
6 Driver section
The integrated high-current drivers permit the use of different types of power MOSFETs
(also multiple MOSFETs to reduce the equivalent R
transition.
The driver for the high-side MOSFET uses the BOOT pin for supply and the PHASE pin for
return. The driver for low-side MOSFET uses the VCC pin for supply and the GND pin for
return.
The controller embodies an anti-shoot-through and adaptive dead-time control to minimize
low side body diode conduction time, maintaining good efficiency while eliminating the need
for a Schottky diode:
●to check the high-side MOSFET turn-off, the PHASE pin is sensed. When the voltage
at the PHASE pin drops, the low-side MOSFET gate drive is suddenly applied
●to check the low-side MOSFET turn-off, the LGATE pin is sensed. When the voltage at
LGATE has fallen, the high-side MOSFET gate drive is suddenly applied
If the current flowing in the inductor is negative, voltage on the PHASE pin will never drop.
To allow the low-side MOSFET to turn on even in this case, a watchdog controller is
enabled. If the source of the high-side MOSFET does not drop, the low side MOSFET is
switched on, thereby allowing the negative current of the inductor to recirculate. This
mechanism allows the system to regulate even if the current is negative.
), maintaining fast switching
DS(on)
Power conversion input is flexible: 5 V, 12 V bus or any bus that allows the conversion (see
maximum duty cycle limitations) to be chosen freely.
6.1 Power dissipation
The L6728D embeds high current MOSFET drivers for both high side and low side
MOSFETs. It is therefore important to consider the power that the device is going to
dissipate in driving them, in order to avoid overcoming the maximum junction operating
temperature.
Two main factors contribute to device power dissipation: bias power and driver power.
●Device bias power (P
supply pins, and is quantifiable as follows (assuming HS and LS drivers with the same
VCC of the device):
●Driver power is the power needed by the driver to continuously switch on and off the
external MOSFETs. It is a function of the switching frequency and total gate charge of
the selected MOSFETs. It can be quantified considering that the total power P
dissipated to switch the MOSFETs (easily calculable) is dissipated by three main
factors: external gate resistance (when present), intrinsic MOSFET resistance and
intrinsic driver resistance. This last factor is the most important one to be determined to
calculate the device power dissipation. The total power dissipated to switch the
MOSFETs is:
) depends on the static consumption of the device through the
DC
P
DC
V
CCICCIBOOT
+()⋅=
SW
P
SW
10/33 Doc ID 16498 Rev 1
F
SW
Q
gHSVBOOT
Q
⋅+⋅()⋅=
gLSVCC
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