L6726A is a single-phase step-down controller
with integrated high-current drivers that provides
complete control logic, protections and reference
voltage to realize in an easy and simple way
general DC-DC converters by using a compact
SO-8 package.
Device flexibility allows managing conversions
with power input V
supply voltage ranging from 5 V to 12 V.
as low as 1.5 V and device
IN
L6726A provides simple control loop with trans-
Applications
■ Subsystem power supply (MCH, IOCH, PCI...)
■ Memory and termination supply
■ CPU and DSP power supply
■ Distributed power supply
■ General DC / DC converters
conductance error amplifier. The integrated 0.8 V
reference allows regulating output voltage with
±1% accuracy over line and temperature
variations. Oscillator is internally fixed to 270 kHz.
L6726A provides programmable over current
protection. Current information is monitored
across the low-side MOSFET R
saving the
dsON
use of expensive and space-consuming sense
resistors.
FB disconnection protection prevents excessive
and dangerous output voltages in case of floating
FB pin.
Typical application circuit and block diagramL6726A
1 Typical application circuit and block diagram
1.1 Application circuit
Figure 1.Typical application circuit
VCC = 5V to 12V
R
R
FB
OS
VIN = 1.5V to 19V
C
DEC
6
FB
7
COMP
C
C
P
R
/ DIS
F
F
3
GND
5
VCC
UGATE
PHASE
L6726A
BOOT
LGATE
/ OC
D
R
D
1
C
BOOT
2
R
R
R
OCSET
gHS
gLS
8
4
HS
LS
C
HF
L
R
SN
C
SN
C
C
(1)
BULK
Vout
OUT
LOAD
L6726A Reference Schematic
(1) Up to 12V with Vcc > 5V
1.2 Block diagram
Figure 2.Block diagram
SS
I
OSCILLATOR
L6726A
VCC
CONTROL LOGIC
& PROTECTIONS
CLOCK
TRANSCONDUCTANCE
ERROR AMPLIFIER
DISABLE
Q
S
R
+
-
OCP
PWM
0.8V
V
OCTH
CROSS CONDUCTION
ADAPTIVE ANTI
I
HS
VCC
LS
OCSET
BOOT
UGATE
PHASE
LGATE
/ OC
GND
/ DIS
COMP
4/35Doc ID 12754 Rev 4
FB
L6726APins description and connection diagrams
2 Pins description and connection diagrams
Figure 3.Pins connection (top view)
LGATE / OC
2.1 Pin descriptions
Table 2.Pins descriptions
Pin nNameFunction
1BOOT
2UGATEHS driver output. Connect to HS MOSFET gate.
3GND
4LGATE / OC
BOOT
UGATE
GND
HS driver supply.
Connect through a capacitor (100 nF) to the floating node (LS-drain) pin
and provide necessary bootstrap diode from VCC.
All internal references, logic and drivers are connected to this pin.
Connect to the PCB ground plane.
LGATE. LS driver output. Connect to LS MOSFET gate.
OC. Over current threshold set. During a short period of time following VCC
rising over UVLO threshold, a 10μA current is sourced from this pin.
Connect to GND with an R
Threshold. The resulting voltage at this pin is sampled and held internally
as the OC set point. Maximum programmable OC threshold is 0.55 V. A
voltage greater than 0.75V (max) activates an internal clamp and causes
OC threshold to be set at 400 mV. R
default threshold.
1
2
L6726A
3
4
8
PHASE
7
COMP / DIS
6
FB
5
VCC
resistor greater than 5kΩ to program OC
OCSET
not connected sets the 400 mV
OCSET
5VCC
6FB
7COMP / DIS
8PHASE
Device and LS driver power supply.
Operative range from 4.1 V to 13.2 V. Filter with at least 1μF MLCC to GND.
Error amplifier inverting input.
Connect with a resistor R
resistor R
reference.
COMP. Error amplifier output. Connect with an R
compensate the device control loop in conjunction to the FB pin.
During the soft-start phase, a 10 μA current is sourced from this pin so the
compensation capacitors also act to program the SS time.
DIS. The device can be disabled by pulling this pin lower than 0.4 V (min).
Setting free the pin, the device enables again.
HS driver return path, current-reading and adaptive-dead-time monitor.
Connect to the LS drain to sense R
This pin is also used by the adaptive-dead-time control circuitry to monitor
when HS MOSFET is OFF.
to the output regulated voltage. Additional
to GND may be used to regulate voltages higher than the
OS
Doc ID 12754 Rev 45/35
FB
- CF // CP to GND to
F
drop to measure the output current.
dsON
Pins description and connection diagramsL6726A
2.2 Thermal data
Table 3.Thermal data
SymbolParameterValue Unit
R
thJA
T
MAX
T
STG
T
J
1. Measured with the component mounted on a 2S2P board in free air (6.7 cm x 6.7 cm, 35 μm (P) and
17.5 μm (S) copper thickness).
Thermal resistance junction to ambient
Maximum junction temperature150°C
Storage temperature range-40 to 150°C
Junction temperature range-20 to 150°C
(1)
85°C/W
6/35Doc ID 12754 Rev 4
L6726AElectrical specifications
3 Electrical specifications
3.1 Absolute maximum ratings
Table 4.Absolute maximum ratings
SymbolParameter ValueUnit
V
V
BOOT
V
UGATE
V
PHASE
V
LGATE
CC
to GND-0.3 to 15V
to PHASE
to GND
to PHASE
to PHASE; t < 50ns
to GND
-0.3 to (V
BOOT
V
BOOT
15
45
- V
-1
+ 0.3
PHASE)
+ 0.3
to GND-8 to 30V
to GND
to GND; t < 50ns
-0.3 to V
-2.5
CC
+ 0.3
FB, COMP to GND-0.3 to 3.6V
3.2 Electrical characteristics
VCC = 12 V; TA = -20 °C to +85 °C unless otherwise specified.
CC
IN
Device supply voltage
Conversion input voltage
See Figure 1
< 7.0 V
V
CC
4.113.2V
13.2V
19.0V
Table 5.Electrical characteristics
SymbolParameterTest conditionsMin.Typ.Max.Unit
Recommended operating conditions
V
V
V
V
V
Supply current and power-ON
I
CC
I
BOOT
VCC supply currentUGATE and LGATE = OPEN6mA
BOOT supply currentUGATE = OPEN; PHASE to GND0.5mA
UVLOVCC Turn-ONVCC rising4.1V
Hysteresis0.2V
Oscillator
T
F
SW
Main oscillator accuracy
= 0 °C to +70 °C243270297
A
225270315
ΔV
d
OSC
MAX
PWM ramp amplitude1.1V
Maximum duty cycle80%
Doc ID 12754 Rev 47/35
kHz
Electrical specificationsL6726A
Table 5.Electrical characteristics (continued)
SymbolParameterTest conditionsMin.Typ.Max.Unit
Reference
V
= 0.8 V, TA = 0 °C to 70 °C-1-1
Output voltage accuracy
Transconductance error amplifier
gmTransconductance
I
FB
A
F
I
COMP
0
0
Input bias currentSourced from FB100nA
Open loop gain
Unity gain
(1)
Current capability
(1)
(1)
Soft-Start and disable
OUT
= 0.8 V-1.5-1.5
V
OUT
%
5mS
70dB
4MHz
Source current360μA
Sink current-360μA
I
SS
Soft-start currentFrom COMP pin10μA
DISDisable thresholdCOMP falling0.40.5V
Gate drivers
I
UGATE
R
UGATE
I
LGATE
R
LGATE
HS source currentBOOT - PHASE = 5 V to 12 V1.5A
HS sink resistanceBOOT - PHASE = 5 V to 12 V1.1Ω
LS source currentVCC = 5 V to 12 V1.5A
LS sink resistanceVCC = 5 V to 12 V0.65Ω
Over-current protection
I
OCSET
V
OC_SW
V
OCTH_FIXED
1. Guaranteed by design, not subject to test.
OCSET current source
OC switch-over thresholdV
Fixed OC thresholdV
Sourced from LGATE pin.
See Section 7.1.1
LGATE/OC
PHASE
rising780mV
to GND-400mV
10μA
8/35Doc ID 12754 Rev 4
L6726ADevice description
4 Device description
L6726A is a single-phase PWM controller with embedded high-current drivers that provides
complete control logic and protections to realize in an easy and simple way a general DCDC step-down converter. Designed to drive N-channel MOSFETs in a synchronous buck
topology, with its high level of integration this 8-pin device allows reducing cost and size of
the power supply solution.
L6726A is designed to operate from a 5 V or 12 V supply bus. Thanks to the high precision
0.8V internal reference, the output voltage can be precisely regulated to as low as 0.8 V with
±1% accuracy over line and temperature variations (between 0 °C and +70 °C). The
switching frequency is internally set to 270 kHz.
This device provides a simple control loop with externally compensated transconductance
error-amplifier and programmable soft start. Low-side-less feature allows the device to
perform soft-start over pre-charged output avoiding negative spikes at the load side.
In order to avoid load damages, L6726A provides programmable threshold over current
protection. Output current is monitored across low-side MOSFET R
expensive and space-consuming sense resistor. L6726A also features FB disconnection
protection, preventing dangerous uncontrolled output voltages in case of floating FB pin.
, saving the use of
dsON
Doc ID 12754 Rev 49/35
Driver sectionL6726A
5 Driver section
The integrated high-current drivers allow using different types of power MOSFET (also
multiple MOSFETs to reduce the equivalent R
The driver for high-side MOSFET uses BOOT pin for supply and PHASE pin for return. The
driver for low-side MOSFET uses the VCC pin for supply and GND pin for return.
The controller embodies an anti-shoot-through and adaptive dead-time control to minimize
low side body diode conduction time, maintaining good efficiency while saving the use of
Schottky diode:
●to check for high-side MOSFET turn off, PHASE pin is sensed. When the voltage at
PHASE pin drops down, the low-side MOSFET gate drive is suddenly applied;
●to check for low-side MOSFET turn off, LGATE pin is sensed. When the voltage at
LGATE has fallen, the high-side MOSFET gate drive is suddenly applied.
If the current flowing in the inductor is negative, voltage on PHASE pin will never drop. To
allow the low-side MOSFET to turn-on even in this case, a watchdog controller is enabled: if
the source of the high-side MOSFET doesn't drop, the low side MOSFET is switched on so
allowing the negative current of the inductor to recirculate. This mechanism allows the
system to regulate even if the current is negative.
), maintaining fast switching transition.
dsON
Power conversion input is flexible: 5 V, 12 V bus or any bus that allows the conversion (See
maximum duty cycle limitation and recommended operating conditions) can be chosen
freely.
10/35Doc ID 12754 Rev 4
L6726ADriver section
5.1 Power dissipation
L6726A embeds high current MOSFET drivers for both high side and low side MOSFETs: it
is then important to consider the power that the device is going to dissipate in driving them
in order to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers power.
●Device bias power (P
supply pins and it is simply quantifiable as follow (assuming to supply HS and LS
drivers with the same VCC of the device):
) depends on the static consumption of the device through the
DC
P
DC
●Drivers power is the power needed by the driver to continuously switch on and off the
external MOSFETs; it is a function of the switching frequency, the voltage supply of the
driver and total gate charge of the selected MOSFETs. It can be quantified considering
that the total power P
dissipated by three main factors: external gate resistance (when present), intrinsic
MOSFET resistance and intrinsic driver resistance. This last term is the important one
to be determined to calculate the device power dissipation. The total power dissipated
to switch the MOSFETs results:
P
SW
where V
External gate resistors helps the device to dissipate the switching power since the same
power P
resulting in a general cooling of the device.
Figure 4.Soft start (left) and disable (right)
will be shared between the internal driver impedance and the external resistor
SW
BOOT
- V
PHASE
dissipated to switch the MOSFETs (easy calculable) is
SW
F
Q
SW
is the voltage across the bootstrap capacitor.
gHS
V
CCICCIBOOT
V
BOOTVPHASE
+()⋅=
–()Q
⋅+⋅[]⋅=
gLSVCC
Doc ID 12754 Rev 411/35
Soft start and disableL6726A
6 Soft start and disable
L6726A implements a soft start to smoothly charge the output filter avoiding high in-rush
currents to be required from the input power supply. The device sources a 10 µA soft start
current from COMP, linearly charging the compensation network capacitors. The ramping
COMP voltage is compared to the oscillator triangular waveform generating PWM pulses of
increasing width that charge the output capacitors.
When the FB voltage crosses 800 mV, the output voltage is in regulation: soft start phase
will end and the transconductance error amplifier output will be enabled closing the control
loop.
In the event of an over current during soft start, the over current logic will override the soft
start sequence and will shut down the PWM logic and both the high side and low side gates.
This condition is latched, cycle VCC to recover.
The device sources soft start current only when VCC power supply is above UVLO
threshold and over current threshold setting phase has been completed.
6.1 Low-side-less start up (LSLess)
L6726A performs a special sequence in enabling LS driver to switch: during the soft-start
phase, the LS driver results disabled (LS = OFF) until the HS starts to switch. This avoids
the dangerous negative spike on the output voltage that can happen if starting over a precharged output and limits the output discharge (amount of output discharge depends on
programmed SS time length: the shorter the programmed SS, the more limited the output
discharge).
If the output voltage is pre-charged to a voltage higher than the final one, the HS would
never start to switch. In this case, LS is enabled and discharges the output to the final
regulation value.
Figure 5.LSLess startup (left) vs non-LSLess startup (right)
6.2 Enable / disable
The device can be disabled by pushing COMP / DIS pin under 0.4 V (min). In this condition
HS and LS MOSFETs are turned off, and the 10
pin. Setting free the pin, the device enables again performing a new SS.
12/35Doc ID 12754 Rev 4
μA SS current is sourced from COMP / DIS
L6726AProtections
7 Protections
7.1 Overcurrent protection
The overcurrent feature protects the converter from a shorted output or overload, by sensing
the output current information across the low side MOSFET drain-source on-resistance,
R
. This method reduces cost and enhances converter efficiency by avoiding the use of
dsON
expensive and space-consuming sense resistors.
The low side R
node when LS MOSFET is turned on with the programmed OCP threshold voltage,
internally held. If the monitored voltage drop (GND to PHASE) exceeds this threshold, an
Overcurrent event is detected. If two overcurrent events are detected in two consecutive
switching cycles, the protection will be triggered and the device will turn off both LS and HS
MOSFETs in a latched condition.
To recover from over current protection triggered, VCC power supply must be cycled.
current sense is implemented by comparing the voltage at the PHASE
dsON
7.1.1 Overcurrent threshold setting
L6726A allows to easily program an overcurrent threshold ranging from 50 mV to 550 mV,
simply by adding a resistor (R
During a short time following VCC rising over UVLO threshold, an internal 10µA current
(I
voltage drop will be sampled and internally held by the device as overcurrent Threshold. The
OC setting procedure overall time length ranges from 5.5 ms to 6.5 ms, proportionally to the
threshold being set.
Connecting a R
R
If the voltage drop across R
inrush current and noise. This can result in undesired OCP triggering. In this case, consider
increasing R
In case R
default value: an internal safety clamp on LGATE is triggered as soon as LGATE voltage
reaches 700 mV (typ), enabling the 400 mV default threshold and suddenly ending OC
setting phase.
) is sourced from LGATE pin, determining a voltage drop across R
OCSET
resistor between LGATE and GND, the programmed threshold will be:
OCSET
I
I
OCth
values range from 5 kΩ to 55 kΩ.
OCSET
OCSET
OCSETROCSET
------------------------------------------- -=
value.
OCSET
is not connected, the device switches the OCP threshold to a 400 mV
R
⋅
dsON
OCSET
) between LGATE and GND.
OCSET
is too low, the system will be very sensitive to start-up
OCSET
. This
See Figure 6 for OC threshold setting procedure timings picture and oscilloscope sample
waveforms.
7.2 Feedback disconnection protection
In order to provide load protection even if FB pin is not connected, a 100 nA bias current is
always sourced from this pin. If FB pin is not connected, bias current will permanently pull
up FB: this forces COMP pin low, avoiding output voltage rising to dangerous levels.
Doc ID 12754 Rev 413/35
ProtectionsL6726A
Figure 6.OC threshold setting procedure timings (top) and waveforms (bottom)
R
R
OCSET
connected
not connected
OCSET
UVLO Th
PWM ram p
bottom edge
Enable Th
700mV
VCC
COMP
LGATE
5.5ms - 6.5ms
Setting Procedure
t
DELAY
UVLO Th
PWM ramp
bottom edge
Enable Th
700mV
VCC
COMP
LGATE
Setting Procedure
t
DELAY
7.3 Undervoltage lock out
In order to avoid anomalous behaviors of the device when the supply voltage is too low to
support its internal rails, UVLO is provided: the device will start up when VCC reaches
UVLO upper threshold and will shutdown when VCC drops below UVLO lower threshold.
The 4.1 V maximum UVLO upper threshold allows L6726A to be supplied from 5 V and 12 V
busses in or-ing diode configuration.
L6726A is capable to precisely regulate an output voltage as low as 0.8 V. In fact, the device
comes with a fixed 0.8 V internal reference that guarantees the output regulated voltage to
be within ±1% tolerance over line and temperature variations between 0 °C and 70 °C
(excluding output resistor divider tolerance, when present).
Output voltage higher than 0.8 V can be achieved by adding a resistor R
and ground. Referring to Figure 1, the steady state DC output voltage will be:
V
OUT
where V
REF
is 0.8 V.
8.2 Compensation network
The control loop shown in Figure 8 is a voltage mode control loop. The error amplifier is a
transconductance type with fixed gain (3.3 ms typ.). The FB voltage is regulated to the
internal reference, thus the output voltage is fixed accordingly to the output resistor divider
(when present).
Transconductance error amplifier output current generates a voltage across Z
compared to oscillator saw-tooth waveform to provide PWM signal to the driver section.
PWM signal is then transferred to the switching node with V
filtered by the output filter.
Figure 8.PWM control loop
OSC
ΔV
OSC
_
+
PWM
COMPARATOR
V
R
⎛⎞
1
REF
⋅=
---------- -+
⎝⎠
R
V
IN
LR
between FB pin
OS
FB
OS
, which is
F
amplitude. This waveform is
IN
V
OUT
C
OUT
ESR
C
R
F
F
COMP
OTA
C
P
Z
F
V
REF
+
_
FB
R
FB
R
OS
OUTPUT
DIVIDER
The converter transfer function is the small signal transfer function between the voltage at
the output node of the EA (COMP) and V
conjugate) at frequency F
depending on the L-C
LC
Doc ID 12754 Rev 415/35
. This function has a double pole (complex
OUT
resonance and a zero at F
OUT
ESR
Application detailsL6726A
depending on the output capacitor ESR. The DC gain of the modulator is simply the input
voltage V
V
OUT
divided by the peak-to-peak oscillator voltage ΔV
IN
OSC
.
is scaled and transferred to FB node by the output resistor divider.
The compensation network closes the loop joining FB and COMP node with transfer
function ideally equal to -gm
·Z
.
F
Compensation goal is to close the control loop assuring high DC regulation accuracy, good
dynamic performances and stability. To achieve this, the overall loop needs high DC gain,
high bandwidth and good phase margin.
High DC gain is achieved giving an integrator shape to compensation network transfer
function. Loop bandwidth (F
should not exceed F
/2π. To achieve a good phase margin, the control loop gain has to
SW
) can be fixed choosing the right RF; however, for stability, it
0dB
cross 0 dB axis with -20 dB/decade slope.
As an example, Figure 9 shows an asymptotic bode plot of a type II compensation.
Type II compensation relies on the zero introduced by the output capacitors bank to achieve
stability. Thus, a needed condition to successfully apply type II compensation is
F
<
ESRF0dB
(usually true when output capacitor is based on electrolytic, aluminium electrolytic or
tantalum capacitor).
To define compensation network components values, the below suggestions may be
followed:
a) Set the output resistor divider in order to obtain the desired output voltage:
FB
OS
V
--------------1–=
V
OUT
REF
and ROS ranges from some hundreds of Ω to some kΩ
FB
R
-----------
R
Usual values of R
(consider trade-off between power dissipation on output resistor divider and offset
introduced by FB bias current).
If the desired output voltage is equal to internal reference, R
FB pin can be directly connected to V
b) Set R
in order to obtain the desired closed loop regulator bandwidth according to
The previous equation refers only to V
OC setting phase or COMP set free to the beginning of V
approximately estimated as follow:
t
delay
Once calculated t
CF0.8V⋅
------------------------=
I
SS
, also the current delivered by the converter during SS to charge the
SS
output capacitor bank can be estimated:
C
I
startup
OUTVOUT
--------------------------------- -=
8.4 Layout guidelines
L6726A provides control functions and high current integrated drivers to implement highcurrent step-down DC-DC converters. In this kind of application, a good layout is very
important.
The first priority when placing components for these applications has to be reserved to the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (EMI and losses) power connections (highlighted in
Figure 10) must be a part of a power plane and anyway realized by wide and thick copper
traces: loop must be anyway minimized. The critical components, i.e. the power MOSFETs,
must be close one to the other. The use of multi-layer printed circuit board is recommended.
ramp up time. The time elapsed from the end of
OUT
ramp up (see Figure 6) can be
OUT
⋅
t
SS
Figure 10. Power connections (heavy lines)
UGATE
PHASE
L6726A
LGATE
GND
The input capacitance (C
), or at least a portion of the total capacitance needed, has to be
IN
placed close to the power section in order to eliminate the stray inductance generated by the
copper traces. Low ESR and ESL capacitors are preferred, MLCC are suggested to be
connected near the HS drain.
Use proper number of vias when power traces have to move between different planes on the
PCB in order to reduce both parasitic resistance and inductance. Moreover, reproducing the
same high-current trace on more than one PCB layer will reduce the parasitic resistance
associated to that connection.
18/35Doc ID 12754 Rev 4
V
IN
C
IN
L
C
OUT
LOAD
L6726AApplication details
Connect output bulk capacitors (C
) as near as possible to the load, minimizing parasitic
OUT
inductance and resistance associated to the copper trace, also adding extra decoupling
capacitors along the way to the load when this results in being far from the bulk capacitors
bank.
Gate traces and phase trace must be sized according to the driver RMS current delivered to
the power MOSFET. The device robustness allows managing applications with the power
section far from the controller without losing performances. Anyway, when possible, it is
recommended to minimize the distance between controller and power section. See
Figure 11 for drivers current paths.
Small signal components and connections to critical nodes of the application, as well as
bypass capacitors for the device supply, are also important. Locate bypass capacitor (VCC
and Bootstrap capacitor) and loop compensation components as close to the device as
practical. For over current programmability, place R
close to the device and avoid
OCSET
leakage current paths on LGATE / OC pin, since the internal current source is only 10 μA
Systems that do not use Schottky diode in parallel to the Low-Side MOSFET might show big
negative spikes on the PHASE pin. This spike must be limited within the absolute maximum
ratings (for example, adding a gate resistor in series to HS MOSFET gate, or a phase
resistor in series to PHASE pin), as well as the positive spike, but has an additional
consequence: it causes the bootstrap capacitor to be over-charged. This extra-charge can
cause, in the worst case condition of maximum input voltage and during particular
transients, that boot-to-phase voltage overcomes the absolute maximum ratings also
causing device failures. It is then suggested in this case to limit this extra-charge by adding a
small resistor in series to the bootstrap diode (R
in Figure 1).
D
Figure 11. Drivers turn-on and turn-off paths
LS DRIVERLS MOSFET
VCC
C
GD
R
GATERINT
LGATE
C
GS
GND
C
DS
HS DRIVERHS MOSFET
BOOT
C
GD
R
GATERINT
UGATE
C
GS
PHASE
R
PHASE
C
DS
Doc ID 12754 Rev 419/35
Application detailsL6726A
8.5 Embedding L6726A-based VRs…
When embedding the VR into the application, additional care must be taken since the whole
VR is a switching DC/DC regulator and the most common system in which it has to work is a
digital system such as MB or similar. In fact, latest MBs have become faster and more
powerful: high speed data busses are more and more common and switching-induced noise
produced by the VR can affect data integrity if additional layout guidelines are not followed.
Few easy points must be considered mainly when routing traces in which switching high
currents flow (switching high currents cause voltage spikes across the stray inductance of
the traces causing noise that can affect the near traces):
When reproducing high current path on internal layers, keep all layers the same size in order
to avoid “surrounding” effects that increase noise coupling.
Keep safe guard distance between high current switching VR traces and data busses,
especially if high-speed data busses, to minimize noise coupling.
Keep safe guard distance or filter properly when routing bias traces for I/O sub-systems that
must walk near the VR.
Possible causes of noise can be located in the PHASE connections, MOSFETs gate drive
and Input voltage path (from input bulk capacitors and HS drain). Also GND connection
must be considered if not insisting on a power ground plane. These connections must be
carefully kept far away from noise-sensitive data busses.
Since the generated noise is mainly due to the switching activity of the VR, noise emissions
depend on how fast the current switches. To reduce noise emission levels, it is also possible,
in addition to the previous guidelines, to reduce the current slope and thus to increase the
switching times: this will cause, as a consequence of the higher switching time, an increase
in switching losses that must be considered in the thermal design of the system.
20/35Doc ID 12754 Rev 4
L6726AApplication Information
9 Application Information
9.1 Output inductor
Inductor value is defined by a compromise between dynamic response, ripple, efficiency,
cost and size. Usually, inductance is calculated to maintain inductor ripple current (ΔI
between 20% and 30% of maximum output current. Given the switching frequency (F
the input voltage (V
), the output voltage (V
IN
) and the desired ripple current (ΔIL),
OUT
inductance can be calculated as follows:
L
SW
)
),
L
VINV
–
----------------------------- -
F
SWΔIL
⋅
OUT
V
--------------
⋅=
OUT
V
IN
Figure 12 shows the ripple current vs. the output voltage for different inductance, with
V
= 5 V and VIN = 12 V.
IN
Increasing inductance reduces inductor ripple current (and output voltage ripple
accordingly) but, at the same time, increases the converter response time to load transients.
Higher inductance means that the inductor needs more time to change its current from initial
to final value. Until the inductor has not finished its charging, the additional output current is
supplied by output capacitors. Minimizing the response time lead to minimize the output
capacitance required. If the compensation network is designed with high bandwidth, during
an heavy load transient the device is able to saturate duty cycle (0% or 80%). When this
condition is reached, the response time is limited only by the time required to charge the
inductor.
Figure 12. Inductor current ripple vs output voltage
12
]
10
A
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Output voltage [V]
Vin=12V, L=1uH
Vin=12V, L=2uH
Vin=5V, L=500nH
Vin=5V, L=1.5uH
Doc ID 12754 Rev 421/35
Application InformationL6726A
9.2 Output capacitors
Output capacitors choice depends on the application constraints in point of output voltage
ripple and output voltage deviation during a load transient.
During steady-state conditions, the output voltage ripple is influenced by ESR and
capacitance of the output capacitors as follows:
ΔV
OUT_ESR
ΔV
OUT_C
Where ΔI
ΔILESR⋅=
1
-------------------------------------- -
ΔI
⋅=
L
8C
⋅⋅
OUTFSW
is the inductor current ripple. These contribution are not in phase, so total ripple
L
will be lower than the sum of their moduli. Even ESL and board parasitic inductance can
contribute significantly to output ripple.
During a load variation, the output capacitors supply to the load the additional current or
absorb the current in excess delivered by the inductor until converter reaction is completed.
In fact, even if the controller react immediately to the load transient saturating the duty cycle
to 80% or 0%, the current slew rate is limited by the inductance. At first approximation,
output voltage drop, based on ESR and capacitor charge/discharge and considering an
ideal load-step, can be estimated as follows:
ΔV
OUT_ESR
ΔV
OUT_C
Where ΔV
the load appliance or V
ΔI
L ΔI
------------------------------------- -=
2C
⋅⋅
is the voltage applied to the inductor during the transient ( for
L
ESR⋅=
OUT
⋅
OUT
OUTΔVL
2
for the load removal).
OUT
D
MAXVINVOUT
–⋅
MLCC capacitors typically have low ESR to minimize the ripple but also have low
capacitance that do not minimize the capacitive voltage deviation during load transient. On
the contrary, electrolytic capacitors usually have higher capacitance to minimize capacitive
voltage deviation during load transient, but also higher ESR value resulting in higher ripple
voltage and resistive voltage drop. For these reasons, a mix between electrolytic and MLCC
capacitor is usually suggested to minimize ripple as well as reducing voltage deviation in
dynamic conditions.
9.3 Input capacitors
The input capacitor bank is designed mainly to stand input rms current, which depends on
output current (I
I
rmsIOUT
The equation reaches its maximum value, I
capacitor ESR:
PESRI
22/35Doc ID 12754 Rev 4
⋅=
rms
) and duty-cycle (D) for the regulation as follows:
OUT
D1D–()⋅⋅=
OUT
2
/2, when D = 0.5. Losses depend on input
L6726A20 A demonstration board
10 20 A demonstration board
L6726A demonstration board realizes on a four-layer PCB a step-down DC/DC converter
and shows the operation of the device in a general purpose application. Input voltage can
range from 5 V to 12 V bus. Output voltage is programmed to 1.25 V. The voltage regulator
can deliver up to 20 A output current. The switching frequency is 270 kHz.
Figure 13. 20 A demonstration board (left) and components placement (right)
Figure 14. 20 A demonstration board top (left) and bottom (right) layers
Doc ID 12754 Rev 423/35
20 A demonstration boardL6726A
Figure 15. 20 A demonstration board inner layers
24/35Doc ID 12754 Rev 4
L6726A20 A demonstration board
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PHASE
8
7
6
51
Q3NCQ3
NC
L1NCL1
NC
12
PHASE
8
7
6
PHASEOUT
51
Q2NCQ2
NC
HSD
8
7
6
51
Q1NCQ1
NC
VIN1VIN1
NC
NC
NC
NC
NC
NC
GNDIN1GNDIN1
VIN_POWER
GNDIN_POWER0VCC
C3NCC3
C2
C1
C9NCC9
C8NCC8
C7NCC7
C6NCC6
C5NCC5
C4NCC4
NC
1800uFC21800uF
1800uFC11800uF
R160R16
0
GND
3
2
4
LSG2
GND
3
2
4
LSG1
PHASE
3
2
C13
VIN_POWER
HSDHSD
C10
C10
100nF
100nF
C381uF C381uF
0
GND
C13
4.7uF
4.7uF
C12
C12
4.7uF
4.7uF
C11
C11
4.7uF
4.7uF
Q4
STD70NH02LT4
Q4
STD70NH02LT4
1
R30R3
UGATEUGATE
UGATEHSG
4
HSG
0000000
BOOT
R2
3.3R23.3
00
D1
1N4148D11N4148
0
GNDGND
VCC
VCCVCC
GNDCC
32
0
000
R17
R17
PHASEPHASE
L6726A/27
L6726A/27
U1
U1
VOUT1VOUT1
8
PHASE
BOOT
1
BOOTPHASE
VOUT
OUT
12
L2
L2
3.3
3.3
COMP
7
COMP
UGATE
2
UGATE
C22NCC22
C21NCC21
C20NCC20
C19NCC19
C18
C18
C17NCC17
C16NCC16
C15NCC15
T60-18 6Ts
T60-18 6Ts
R4
Q6NCQ6
Q5
Q5
LGATELGATE
VCCVCC_PINLGATE
3.3R13.3
FB
1uF
1uF
6
5
FB
VCC
GND
LGATE
3
4
GND
1.8R41.8
GNDOUT
GNDOUT1GNDOUT1
NC
NC
NC
NC
2200uF
2200uF
NC
NC
NC
C23
6.8nF
C23
6.8nF
NC
0
32
1
STD95NH02LT4
STD95NH02LT4
0
32
1
LSG1
0
R50R5
LGATELGATE
R1
C14
C14
R18
20k
R18
20k
0
000000000
LSG2LSG2LSG2LSG2LSG2LSG2LSG2LSG2LSG2LSG2LSG2LSG2
R15NCR15
0
C34NCC34
NC
C33NCC33
NC
C32NCC32
NC
C31NCC31
NC
C30NCC30
NC
C29NCC29
OUT
NC
C28NCC28
NC
C27NCC27
NC
C26NCC26
NC
C25
C25
OUTOUTOUTOUTOUTOUTOUTOUTOUTOUTOUTOUTOUTOUTOUTOUT
PHASE
NC
FB
FBFB
COMPCOMP
VCC_PIN
2200uF
2200uF
R110R11
R10NCR10
R9
R8NCR8
C24
C24
R72kR7
COMP
R6NCR6
NC
0000000000
QRL
WFQX)3
V
2
ZR
2
O
0
O
5
D
NC
'
J
&
QL
W
Q
H
C37NCC37
NC
2.2kR92.2k
NC
68nF
68nF
2k
C36NCC36
R14NCR14
R13
R13
R120R12
C35
C35
NC
3.9k
3.9k
0
470pF
470pF
P
5
H
O
S
P
5
L
NC
00
7(6&2
URI
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Doc ID 12754 Rev 425/35
20 A demonstration boardL6726A
Table 6.20 A demonstration board - bill of material
QtyReferenceDescriptionPackage
Capacitors
2C1, C2
1C10MLCC, 100 nF, 25 V, X7RSMD0603
3C11 to C13
2C14, C38MLCC, 1 μF, 16 V, X7RSMD0805
2C18, C25
1C23MLCC, 6.8 nF, X7R
1C35MLCC, 470 pF, X7R
Resistors
3R1, R2, R17Resistor, 3R3, 1/16 W, 1%SMD0603
3R3, R5, R16Resistor, 0R, 1/8 W, 1%
1R4Resistor, 1R8, 1/8 W, 1%
2R11, R12Resistor, 0R, 1/16 W, 1%
1R9Resistor, 2K2, 1/16 W, 1%
1R13Resistor, 3K9, 1/16 W, 1%
1R7Resistor, 2K, 1/16 W, 1%
1R18Resistor, 20K, 1/16 W, 1%
Electrolytic Cap 1800 μF 16 V
Nippon Chemi-Con KZJ or KZG
MLCC, 4.7 μF, 1 6 V, X 5 R
Murata GRM31CR61C475MA01
Electrolytic Cap 2200 μF 6.3 V
Nippon Chemi-Con KZJ or KZG
This is the input voltage for the power conversion. The high-side MOSFET drain is
connected to this input. Supply must be compliant with VIN recommended operating
conditions and capacitors rating.
If VIN voltage is compliant also to VCC range listed in recommended operating conditions, it
can supply also the device through R16 resistor.
10.1.2 Power output (VOUT)
This is the output voltage of the power conversion. The output voltage is programmed to
1.25 V. It can be changed by replacing R13 (adjusting of compensation network may be
needed). R18 allows to adjust OCP threshold.
10.1.3 IC additional supply (VCC)
The controller can be supplied separately from the power conversion through VCC input. In
this case, to separate VCC from VIN, R16 resistor must be removed.
10.1.4 Test points
The following test points are provided to allow easy probing of important signals:
–COMP: Output of the error amplifier;
–FB: Inverting input of the error amplifier;
–PH: Phase pin of the device;
–LG: Low-side gate pin of the device;
–UG: High-side gate pin of the device.
10.1.5 Demonstration board efficiency
Figure 17. 20 A demonstration board efficiency
100
95
90
85
80
75
70
65
Efficiency [%]
60
55
50
0246810121416182022
Vin= 12V, Vout=1.25V
Vin= 5V, Vout=1.25V
Vin=12V, Vout=2.5V
Vin= 5V, Vout=2.5V
Output Current [A]
Doc ID 12754 Rev 427/35
5 A demonstration boardL6726A
11 5 A demonstration board
L6726A demonstration board realizes on a two-layer PCB a step-down DC/DC converter
and shows the operation of the device in a general-purpose low-current application. Input
voltage can range from 5 V to 12 V bus. Output voltage is programmed at 1.25 V. The
application can deliver an output current in excess of 5 A. The switching frequency is 270
kHz.
Figure 18. 5 A demonstration board (left) and components placement (right)
Figure 19. 5 A demonstration board top (left) and bottom (right) layers
Table 7.5 A demonstration board - bill of material
QtyReferenceDescriptionPackage
Capacitors
2C12, C51
1C10MLCC, 100nF, 25V, X7RSMD0603
2C14, C38MLCC, 1 μF, 16 V, X7RSMD0805
1C39
1C30
1C23MLCC, 6.8 nF, X7R
1C35MLCC, 2.2 nF, X7R
Resistors
1R4Resistor, 1R8, 1/8 W, 1%SMD0805
4R3, R5, R10, R16Resistor, 0R, 1/16 W, 1%
3R1, R2, R17Resistor, 3R3, 1/16 W, 1%
1R9Resistor, 2K2, 1/16 W, 1%
1R7Resistor, 820R, 1/16 W, 1%
10 μF, 2 5 V, X 5 R
Murata GRM31CR61E106KA12
MLCC, 22 μF, 6.3 V, X5R
Murata GRM31CR60J226ME19
330 μF, 6.3 V, 40 m
Sanyo 6TPB330M
Ω
SMD1206
SMD1206
SMD7343
SMD06031C24MLCC, 220 nF, X7R
SMD0603
SMD06031R13Resistor, 3K9, 1/16 W, 1%
Inductor
1L1
Active Components
1D1Diode, BAT54SOT23
1Q5Mosfet, STS9D8NH3LLSO8
1U1Controller, L6726ASO8
11.1 Board description
11.1.1 Power input (VIN)
This is the input voltage for the power conversion. The high-side MOSFET drain is
connected to this input. Supply must be compliant with VIN recommended operating
conditions and capacitors rating.
If VIN voltage is compliant also to VCC range listed in recommended operating conditions, it
can supply also the device through R16 resistor.
Inductor, 2.20 μH,
Wurth 744324220LF
na
30/35Doc ID 12754 Rev 4
L6726A5 A demonstration board
11.1.2 Power output (VOUT)
This is the output voltage of the power conversion. The output voltage is programmed to
1.25 V. It can be changed by replacing R13 (adjusting of compensation network may be
needed). Adding R18 allows to adjust OCP threshold.
11.1.3 IC additional supply (VCC)
The controller can be supplied separately from the power conversion through VCC input. In
this case, to separate VCC from VIN, R16 resistor must be removed.
11.1.4 Test points
The following test points are provided to allow easy probing of important signals:
–COMP: output of the error amplifier;
–FB: inverting input of the error amplifier;
–PH: Phase pin of the device;
–LG: Low-side gate pin of the device;
–UG: High-side gate pin of the device.
11.1.5 Demonstration board efficiency
Figure 21. 5 A demonstration board efficiency
100
95
90
85
80
75
70
65
Efficiency [%]
60
55
50
01234 56
Output Current [A]
Vin = 12V, Vout = 1.25V
Vin = 5V, Vout = 1.25V
Vin = 12V, Vout = 2.5V
Vin = 5V, Vout = 2.5V
Doc ID 12754 Rev 431/35
Package mechanical dataL6726A
12 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK®
32/35Doc ID 12754 Rev 4
L6726APackage mechanical data
Table 8.SO-8 mechanical data
mm.inch
Dim.
MinTypMaxMinTypMax
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
A2 1.10 1.65 0.043 0.065
B 0.33 0.51 0.013 0.020
C 0.19 0.25 0.007 0.010
(1)
D
E 3.80 4.00 0.15 0.157
e 1.27 0.050
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
k 0° (min.), 8° (max.)
ddd 0.10 0.004
1. D and F does not include mold flash or protrusions. Mold flash or potrusions shall not exceed 0.15mm
(.006inch) per side.
Section 9 on page 21, Section 10 on page 23, Section 11 on page 28
Updated: Table 5 on page 7
34/35Doc ID 12754 Rev 4
L6726A
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