2/3/4 phase controller with embedded drivers for Intel® VR11.1
Features
■ Load transient boost LTB Technology™ to
minimize the number of output capacitors
■ 2 or 3-phase operation with internal driver
■ 4-phase operation with external PWM driver
signal
■ PSI input with programmable strategy
■ Imon output
■ 0.5% output voltage accuracy
■ 8-bit programmable output up to 1.60000 V -
Intel VR11.1 DAC - backward compatible with
VR10/VR11
■ Full differential current sense across inductor
■ Differential remote voltage sensing
■ Adjustable voltage offset
■ LSLess startup to manage pre-biased output
■ Feedback disconnection protection
■ Preliminary overvoltage protection
■ Programmable overcurrent protection
■ Programmable overvoltage protection
■ Adjustable switching frequency
■ SS_END and OUTEN signal
■ VFQFPN-48 7x7 mm package with exposed
pad
Applications
■ High current VRM/VRD for desktop / server /
workstation CPUs
■ High density DC/DC converters
L6716
VFQFPN-48 - 7 x 7 mm
Description
The device implements a two-to-four phases stepdown controller with three integrated high current
drivers in a compact 7x7 mm body package with
exposed pad.
Load transient boost LTB Technology™ reduces
system cost by providing the fastest response to
load transition therefore requiring less bulk and
ceramic output capacitors to satisfy load transient
requirements.
The device embeds VR11.x DACs: the output
voltage ranges up to 1.60000 V managing D-VID
with ±0.5% output voltage accuracy over line and
temperature variations.
The controller assures fast protection against load
overcurrent and under / overvoltage (in this last
case also before UVLO). Feedback disconnection
prevents from damaging the load in case of
disconnections in the system board.
In case of overcurrent, the system works in
constant current mode until UVP.
Principle application circuit and block diagramL6716
1 Principle application circuit and block diagram
1.1 Principle application circuit
to BOOT1
to BOOT3
220nF
ROUT
(a)
Vcc_core
LOAD
GND_core
Figure 1.Principle application circuit for VR11.1 - 2 phase operation
L
42
VCCDR
3
VCC
2
SGND
12
OVPSEL
13
OCSET/PSI_A
11
OFFSET
10
LTBGAIN
14
OSC/FAULT
15
SSOSC
35
SSEND
33
VID7
32
VID6
31
VID5
30
VID4
29
VID3
28
VID2
27
VID1
26
VID0
34
PSI
16
OUTEN
9
IMON
8
LTB
4
COMP
5
FB
6
VSEN
FBG
7
IN
L6716
PWM4 /
PH_SEL
PGND
49
BOOT1
UGATE1
PHASE1
LGATE1
CS1-
CS1+
BOOT2
UGATE2
PHASE2
LGATE2
CS2-
CS2+
BOOT3
UGATE3
PHASE3
LGATE3
CS3-
CS3+
CS4-
CS4+
47
1
48
45
18
Rg
17
39
40
41
44
20
Rg
19
36
37
38
43
Rg
22
21
25
Rg
24
23
VIN
HS1
LS1
VIN
HS3
LS3
CIN
L1
R
C
220nF
220nF
COUT
L3
R
C
220nF
VIN
GNDIN
5V
SB
Optional:Pre-OVP
Vcc
ROVP
ROCSET
ROFFSET
RLTBGAIN
ROSC_SGND
ROSC_VCC
To Vcc
RSS_FLIM
RSSOSC
Optional:
See DS
VTT
1k
SS_END
+3V3
RIMON_OS
R1
RIMON_TOT
CLTB
RLTB
C
I
R
I
L6716 REF.SCH:
2Phase Operation
R3
CP
To GND CORE
RFLIMT
D
Q
10k
VID bus from CPU
To CPU
To Enable circuitry
R2
NTC
CF
RF
RFB
RFB1
RFB2
RFB3
NTC
CIMON
a. Refer to the application note for the reference schematic.
4/57 Doc ID 14521 Rev 3
L6716Principle application circuit and block diagram
Figure 2.Principle application circuit for VR11.1- 3 phase operation
L
V
IN
GND
IN
42
5V
SB
Optional:Pre-OVP
V
cc
3
2
12
R
OVP
R
OCSET
13
R
OFFSET
11
R
LTBGAIN
10
R
OSC_SGND
14
R
Optional:
See DS
To Vcc
R
D
SSOSC
10k
OSC_VCC
R
SS_FLIM
15
R
FLIMT
Q
VTT
R
R
IMON_TOT
1k
IMON_OS
VID bus from CPU
To CPU
To Enable circuitry
R
1
R
2
R
3
NTC
35
33
32
31
30
29
28
27
26
34
16
9
CI
MON
SS_END
+3V3
To GND CORE
8
C
LTB
C
R
LTB
C
I
R
I
F
C
P
R
F
R
FB1
R
FB3
R
R
NTC
4
5
FB
FB2
6
7
L6716 REF.SCH:
3-Phase Operation
IN
VCCDR
VCC
SGND
OVPSEL
OCSET/PSI_A
OFFSET
LTBGAIN
OSC/FAULT
SSOSC
SSEND
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
PSI
OUTEN
IMON
LTB
COMP
FB
VSEN
FBG
PGND
BOOT1
UGATE1
47
PHASE1
LGATE1
CS1-
CS1+
BOOT2
UGATE2
PHASE2
LGATE2
CS2-
CS2+
BOOT3
L6716
UGATE3
38
PHASE3
LGATE3
CS3-
CS3+
PWM4 /
PH_SEL
CS4-
CS4+
49
41
1
48
HS1
V
IN
C
IN
L1
45
LS1
R
C
18
Rg
HS2
220nF
V
IN
17
39
40
L2
44
LS2
R
C
20
Rg
HS3
220nF
V
IN
19
36
37
L3
43
LS3
R
C
Rg
22
21
220nF
25
Rg
24
23
(b)
to BOOT1
to BOOT2
to BOOT3
Vcc_core
C
OUT
LOAD
R
OUT
GND_core
220nF
b. Refer to the application note for the reference schematic.
Doc ID 14521 Rev 35/57
Principle application circuit and block diagramL6716
Figure 3.Principle application circuit for VR11.1- 4 phase operation
L
V
IN
GND
IN
Optional:Pre-OVP
Optional:
See DS
VTT
SS_END
+3V3
R
R
IMON_TOT
To GND CORE
L6716 REF.SCH:
4-Phase Operation
5V
SB
1k
IMON_OS
C
LTB
R
LTB
C
I
R
I
V
To Vcc
R
SSOSC
D
10k
VID bus from CPU
To CPU
To Enable circuitry
R
1
R
2
R
3
NTC
C
F
C
P
R
F
R
FB1
R
FB3
cc
R
OVP
R
OCSET
R
OFFSET
R
LTBGAIN
R
OSC_SGND
R
OSC_VCC
R
SS_FLIM
R
R
NTC
42
3
2
12
13
11
10
14
15
R
FLIMT
Q
35
33
32
31
30
29
28
27
26
34
16
9
CI
MON
8
4
5
FB
FB2
6
7
IN
VCCDR
VCC
SGND
OVPSEL
OCSET/PSI_A
OFFSET
LTBGAIN
OSC/FAULT
SSOSC
SSEND
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
PSI
OUTEN
IMON
LTB
COMP
FB
VSEN
FBG
PGND
BOOT1
48
UGATE1
47
PHASE1
45
LGATE1
18
CS1-
17
CS1+
39
BOOT2
40
UGATE2
41
PHASE2
44
LGATE2
20
CS2-
19
CS2+
36
BOOT3
L6716
37
UGATE3
38
PHASE3
43
LGATE3
CS3-
CS3+
25
PWM4 /
PH_SEL
CS4-
CS4+
49
1
V
IN
C
IN
HS1
L1
LS1
R
C
Rg
220nF
V
IN
HS2
L2
LS2
R
C
Rg
220nF
V
IN
C
OUT
HS3
L3
LS3
R
C
Rg
22
21
220nF
VIN
Optional
VCC
EX_PAD
7
PVCC
BOOT
UGATE
PHASE
L6741
LGATE
V
IN
2
1
5
8
5
HS4
LS4
C
HF
6
3V3
1k
3
PWM
PWM
1k
4
GND
Rg
24
23
(c)
to BOOT1
to BOOT2
to BOOT3
L4
R
220nF
Vcc_core
LOAD
R
OUT
GND_core
C
c. Refer to the application note for the reference schematic.
6/57 Doc ID 14521 Rev 3
L6716Principle application circuit and block diagram
1.2 Block diagram
Figure 4.Block diagram
BOOT1
UGATE1
PHASE1
LGATE1
BOOT2
UGATE2
PHASE2
LGATE2
BOOT3
UGATE3
PHASE3
LGATE3
SS_END
OSC / FAULT
SSOSC
VID0
VID1
VID2
VID3
VID4
VID5
VID6
VID7
PSI
2/4 PHASE
OSCILLATOR
DIGITAL
SOFT START
DAC
OUTEN
OUTEN
HS1LS1
LTB
VID CONTROL
WITH DYNAMIC
10uA
HS2
LOGIC PWM
ADAPTIVE ANTI
CROSS CONDUCTION
CURRENT SHARING
CORRECTION
PWM1PWM2PWM3
VCC
VCCDR
OUTEN
SSOSC
DROOP
I
I
FFSET
O
LTB
PWM1
CONTROL LOGIC
AND PROTECTIONS
VREF
GND DROP
RECOVERY
FBG
ERROR
AMPLIFIER
FB
COMP
OFFSET
I
LS2HS3
LOGIC PWM
ADAPTIVE ANTI
CROSS CONDUCTION
CURRENT SHARING
CORRECTION
PWM2
PWM3
L6716
TOTAL DELIVERED CURRENT
+175mV / 1.800V / OVP
COMPARATOR
+.1240V
50uA
VSEN
OFFSET
PWM4
OCP
I
PSI
OVP
LTB
LTB
CROSS CONDUCTION
CURRENT SHARING
CORRECTION
LTB
OCSET
+.1240V
LS3
LOGIC PWM
ADAPTIVE ANTI
AVERAGE
CURRENT
OCSET
I
/PSI_A
OCSET
PGND
LTB
CH4 CURRENT
CH1 CURRENT
CH2 CURRENT
CH3 CURRENT
20uA
OVP
OVPSEL
VCCDR
+.1240V
CURRENT SHARING
CORRECTION
PWM4
READING
READING
READING
READING
IMON
PWM4/PH_SEL
10uA
LTBGAIN
CS4-
CS4+
CS1CS1+
CS2CS2+
CS3-
CS3+
VCC
DROOP
I
VCC
SGND
Doc ID 14521 Rev 37/57
Pin description and connection diagramL6716
2 Pin description and connection diagram
Figure 5.Pin connection (top view)
BOOT3
SSEND
PSI
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
PWM4/
PH_SEL
UGATE3
PHASE3
BOOT2
UGATE2
PHASE2
VCCDR
LGATE3
LGATE2
LGATE1
N.C.
PHASE1
UGATE1
36 35 34 33 32 31 30 29 28 27 26 25
37
38
39
40
41
42
43
44
45
46
47
48
123456789101112
49 PGND
24
23
22
21
20
19
18
17
16
15
14
13
CS4-
CS4+
CS3-
CS3+
CS2-
CS2+
CS1-
CS1+
OUTEN
SSOSC
OSC/FAULT
OCSET/PSI_A
2.1 Pin description
Table 2.Pin description
N°NameDescription
Channel 1 HS driver supply.
1BOOT1
2SGNDAll the internal references are referred to this pin. Connect it to the PCB signal ground.
3VCC
4COMP
5FB
6VSEN
7FBG
Connect through a capacitor (100 nF typ.) to PHASE1 and provide necessary bootstrap diode.
A small resistor in series to the boot diode helps in reducing boot capacitor overcharge.
Device supply voltage pin.
The operative supply voltage is 12 V ±15%. Filter with at least 1 μF capacitor vs. SGND.
Error amplifier output. Connect with an R
The device cannot be disabled by pulling down this pin.
Error amplifier inverting input pin.
Connect with a resistor R
A current proportional to the load current is sourced from this pin in order to implement the
Droop effect. See “Droop function” Section for details.
Output voltage monitor, manages OVP/UVP protections and FB disconnection.
Connect to the positive side of the load to perform remote sense.
See “Layout guidelines” Section for proper layout of this connection.
Connect to the negative side of the load to perform remote sense.
See “Layout guidelines” Section for proper layout of this connection.
FB
VCC
SGND
BOOT1
FB
COMP
vs. VSEN and with an RF - CF//CP vs. COMP pin.
LT B
FBG
VSEN
IMON
LTBGAIN
- CF//CP vs. FB pin.
F
OFFSET
OVPSEL
8/57 Doc ID 14521 Rev 3
L6716Pin description and connection diagram
Table 2.Pin description (continued)
N°NameDescription
Load transient boost pin.
Internally fixed at 2 V, connecting a R
8LTB
boost technology™: as soon as the device detects a transient load it turns on all the PHASEs
at the same time. Short to SGND to disable the function.
See “Load transient boost technology” Section for details.
Current monitor output pin.
9IMON
A current proportional to the load current is sourced from this pin. Connect through a resistor
to FBG to implement a load indicator. Connect the load indicator directly to VR11.1
R
MON
CPUs.The pin voltage is clamped to 1.1 V max to preserve the CPU from excessive voltages.
Load transient boost technology™ gain pin.
10LTBGAIN
Internally fixed at 1.24 V, connecting a R
the LTB action. See See “Load transient boost technology” Section for details.
Offset programming pin.
Internally fixed at 1.240 V, connecting a R
11OFFSET
that is mirrored into FB pin in order to program a positive offset according to the selected R
Short to SGND to disable the function.
See “Offset (optional)” Section for details.
Overvoltage programming pin. Internally pulled up by 20 µA (typ) to 3.3 V.
Leave floating to use built-in protection thresholds (OVP
12OVPSEL
Connect to SGND through a R
threshold to a fixed voltage according to the R
OVP
See “Overvoltage and programmable OVP” Section for details.
Connect to SGND to select VR10/VR11 table. In this case the OVP threshold becomes
1.800 V (typ).
Overcurrent setting, PSI action pin.
13
OCSET/
PSI_A
Connect to SGND through a R
OCSET
It also allows to select the number of phase when PSI mode is selected.
See “Overcurrent protection” Section for details.
Oscillator, FAULT pin.
It allows programming the switching frequency FSW of each channel: the equivalent switching
frequency at the load side results in being multiplied by the phase number N.
14
OSC/
FAULT
Frequency is programmed according to the resistor connected from the pin vs. SGND or VCC
with a gain of 9.1 kHz/µA (see relevant section for details).
Leaving the pin floating programs a switching frequency of 200 kHz per phase.
The pin is forced high (3.3 V typ) to signal an OVP/UVP fault: to recover from this condition,
cycle VCC or the OUTEN pin. See “Oscillator” Section for details.
Soft-start oscillator pin.
By connecting a resistor R
15SSOSC
Soft-Start time T
implemented to reach V
V
to the programmed VID code. The pin is kept to a fixed 1.240 V.
BOOT
See “Soft-start” Section for details.
will proportionally change with a gain of 25 [µs / kΩ]. The same slope
SS
to GND, it allows programming the soft-start time.
SS
has to be considered also when the reference moves from
BOOT
- C
LT B
LT B
LTBGAIN
OFFSET
vs. V
resistor vs SGND allows setting the gain of
resistor vs. SGND allows setting a current
allows to enable the load transient
OUT
= VID + 175 mV typ).
TH
resistor and filter with 100 pF (max) to set the OVP
resistor.
OVP
resistor to set the OCP threshold for each phase.
FB
.
Doc ID 14521 Rev 39/57
Pin description and connection diagramL6716
Table 2.Pin description (continued)
N°NameDescription
Output enable pin. Internally pulled up by 10 µA (typ) to 3 V.
Forced low, the device stops operations with all MOSFETs OFF: all the protections are
16OUTEN
17CS1+
18CS1-
19CS2+
20CS2-
21CS3+
22CS3-
disabled except for preliminary overvoltage.
Leave floating, the device starts-up implementing soft-start up to the selected VID code.
Cycle this pin to recover latch from protections; filter with 1 nF (typ) vs. SGND.
Channel 1 current sense positive input.
Connect through an R-C filter to the phase-side of the channel 1 inductor.
See “Layout guidelines” Section for proper layout of this connection.
Channel 1 current sense negative input.
Connect through a Rg resistor to the output-side of the channel 1 inductor.
See “Layout guidelines” Section for proper layout of this connection.
Channel 2 current sense positive input.
Connect through an R-C filter to the phase-side of the channel 2 inductor.
Short to V
when using 2-phase operation.
OUT
See “Layout guidelines” Section for proper layout of this connection.
Channel 2 current sense negative input.
Connect through a Rg resistor to the output-side of the channel 2 inductor.
Still connect to V
through Rg resistor when using 2-phase operation.
OUT
See “Layout guidelines” Section for proper layout of this connection.
Channel 3 current sense positive input.
Connect through an R-C filter to the phase-side of the channel 3 inductor.
See “Layout guidelines” Section for proper layout of this connection.
Channel 3 current sense negative input.
Connect through a Rg resistor to the output-side of the channel 3 inductor.
See “Layout guidelines” Section for proper layout of this connection.
Channel 4 current sense positive input.
23CS4+
Connect through an R-C filter to the phase-side of the channel 4 inductor.
Short to V
when using 2-phase or 3-phase operation.
OUT
See “Layout guidelines” Section for proper layout of this connection.
Channel 4 current sense negative input.
24CS4-
Connect through a Rg resistor to the output-side of the channel 4 inductor.
Still connect to V
through Rg resistor when using 2-phase or 3-phase operation.
OUT
See “Layout guidelines” Section for proper layout of this connection.
PWM outputs, phase selection pin.
Internally pulled up by 10 µA to 3.3 V (until the soft-start has not finished), connect to external
driver PWM input when 4-phase operation is used.
The device is able to manage HiZ status by setting the pis floating.
25
PWM4/
PH_SEL
Short to SGND to select 3-phase operation and leave floating to select 2-phase operation.
26 to 33
VID0 to
VID7
Voltage identification pins. (not internally pulled up).
Connect to SGND to program a '0' or connect to the external pull-up resistor to program a '1'.
They allow programming output voltage as specified in Tab l e 7 .
10/57 Doc ID 14521 Rev 3
L6716Pin description and connection diagram
Table 2.Pin description (continued)
N°NameDescription
Power saving indicator pin.
34PSI
35SSEND
36BOOT3
37UGATE3
38PHASE3
39BOOT2
40UGATE2
Connect to the PSI pin of the CPU to manage low-power state.
When asserted (pulled low), the controller will act as programmed on the OCSET/PSI_A.
Soft-start END signal.
Open drain output sets free after ss has finished and pulled low when triggering any
protection. Pull up to a voltage lower than 3.3 V, if not used it can be left floating.
Channel 3 HS driver supply.
Connect through a capacitor (100 nF typ.) to PHASE3 and provide necessary bootstrap
diode.A small resistor in series to the boot diode helps in reducing boot capacitor overcharge.
Channel 3HS driver output.
It must be connected to the HS3 MOSFET gate. A small series resistors helps in reducing
device-dissipated power.
Channel 3 HS driver return path.
It must be connected to the HS3 MOSFET source and provides return path for the HS driver
of channel 3.
Channel 2 HS driver supply.
Connect through a capacitor (100 nF typ.) to PHASE2 and provide necessary bootstrap diode.
A small resistor in series to the boot diode helps in reducing Boot capacitor overcharge. Leave
floating when using 2-Phase operation.
Channel 2HS driver output.
It must be connected to the HS2 MOSFET gate. A small series resistors helps in reducing
device-dissipated power. Leave floating when using 2-Phase operation.
Channel 2 HS driver return path.
41PHASE2
It must be connected to the HS2 MOSFET source and provides return path for the HS driver
of channel 2. Leave floating when using 2-phase operation.
42VCCDR
43LGATE3
LS Driver Supply. VCDDR pin voltage has to be the same of VCC pin.
Filter with 2 x 1 µF MLCC capacitor vs. PGND.
Channel 3LS driver output.
A small series resistor helps in reducing device-dissipated power.
Channel 2LS driver output.
44 LGATE2
A small series resistor helps in reducing device-dissipated power.
Leave floating when using 2-phase operation.
45LGATE1
Channel 1LS driver output.
A small series resistor helps in reducing device-dissipated power.
46N.C.Not internally connected.
Channel 1 HS driver return path.
47PHASE1
It must be connected to the HS1 MOSFET source and provides return path for the HS driver
of channel 1.
Doc ID 14521 Rev 311/57
Pin description and connection diagramL6716
Table 2.Pin description (continued)
N°NameDescription
Channel 1HS driver output.
48UGATE1
49PGND
It must be connected to the HS1 MOSFET gate. A small series resistors helps in reducing
device-dissipated power.
Power ground pin (LS drivers return path). Connect to power ground plane.
Exposed pad connects also the silicon substrate. As a consequence it makes a good thermal
contact with the PCB to dissipate the power necessary to drive the external MOSFETs.
Connect it to the power ground plane using 5.2 x 5.2 mm square area on the PCB and with
sixteen vias (uniformly distributed), to improve electrical and thermal conductivity.
12/57 Doc ID 14521 Rev 3
L6716Maximum ratings
3 Maximum ratings
3.1 Absolute maximum ratings
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC, VCCDR
V
BOOTx
V
PHASEx
V
UGATEx
V
PHASEx
To P GN D 1 5V
Boot voltage15V
-
LGATEx to PGND
All other pins to PGND -0.3 to 3.6V
Negative peak voltage to PGND; T < 400 ns
VCC = VCCDR = 12 V
V
PHASE
Positive voltage to PGND
VCC = VCCDR = 12 V
Positive peak voltage to PGND; T < 200 ns
VCC = VCCDR = 12 V
Maximum withstanding voltage range test condition:
CDF-AEC-Q100-002- “human body model”
acceptance criteria: “normal performance”
3.2 Thermal data
15V
-0.3 to
Vcc+0.3
-8V
26V
30V
+/- 1750V
V
Table 4.Thermal data
SymbolParameterValueUnit
R
thJA
T
MAX
T
stg
T
J
P
tot
Thermal resistance junction to ambient
(Device soldered on 2s2p PC board)
40°C / W
Maximum junction temperature150°C
Storage temperature range-40 to 150°C
Junction temperature range-10 to 125°C
Max power dissipation at TA = 25 °C2.5W
Doc ID 14521 Rev 313/57
Electrical characteristicsL6716
4 Electrical characteristics
4.1 Electrical characteristics
V
= 12 V ± 15%, TJ = 0 °C to 70 °C unless otherwise specified.