VR11.1 single phase controller with integrated driver
■ 8-bit programmable output up to 1.60000 V -
■ High current embedded driver
■ High output voltage accuracy
■ Programmable droop function
■ Imon output
■ Load transient boost LTB Technology™ to
®
Intel
VR11.1 DAC
minimize the number of output capacitors
■ Full differential current sense across inductor
■ Differential remote voltage sensing
■ Adjustable voltage offset
■ LSLess startup to manage pre-biased output
■ Feedback disconnection protection
■ Preliminary overvoltage protection
■ Programmable overcurrent protection
■ Programmable overvoltage protection
■ Adjustable switching frequency
■ SSEND and OUTEN signal
■ VFQFPN-40 6x6 mm package with exp. pad
VFQFPN-40 6 x 6 mm
Description
The device implements a single phase step-down
controller with integrated high current driver in a
compact 6x6 mm body package with exposed
pad.
The device embeds VR11.x DACs: the output
voltage ranges up to 1.60000 V managing D-VID
with high output voltage accuracy over line and
temperature variations.
Imon capability guarantee full compatibility with
VR11.1 enabling additional power saving
technique.
Programmable droop function allows to supply all
the latest Intel CPU rails.
Applications
■ VTT and VAXG rails
■ CPU power supply
■ High density DC/DC converters
Load transient boost LTB Technology™ reduces
system cost by providing the fastest response to
load transition.
The controller assures fast protection against load
over current and under / over voltage. Feedback
disconnection prevents from damaging the load in
case of disconnections in the system board.
In case of over-current, the system works in
constant current mode until UVP.
Principle application circuit and block diagramL6706
1 Principle application circuit and block diagram
1.1 Principle application circuit
Figure 1.Principle application circuit
L
V
IN
= 12V
GND
SS_END
IN
5V
SB
Optional:Pre-OVP
Optional:
See DS
VTT
1k
V
cc
To Vcc
R
SSOSC
D
10k
VID bus from CPU
To Enable circuitry
L6706 REF.SCH
R
OVP
R
OCSET
R
OFFSET
R
LTBGAIN
R
OSC_SGND
R
OSC_VCC
R
SS_FLIM
R
Q
FLIMT
35
37
1
3
2
12
13
11
10
14
15
29
27
26
25
24
23
22
21
20
16
IN
VCCDR
PGND
DGND
VCC
SGND
OVPSEL
OCSET
OFFSET
LTBGAIN
OSC/FAULT
SSOSC/FLIMIT
SSEND
VID7
VID6
VID5
VID4
VID3
VID2
VID1
VID0
OUTEN
EXPAD
UGATE
PHASE
L6706
41
BOOT
LGATE
COMP
VSEN
IMON
INT1
INT3
INT4
INT2
CS-
CS+
LTB
FB
FBG
(a)
38
40
39
36
18
Rg
HS1
LS1
V
IN
17
L1
R
C
220nF
C
IN
Vcc_core
C
OUT
LOAD
R
OUT
GND_core
8
4
C
F
C
P
R
5
C
i
R
i
6
F
R
FB
R
FB1
R
FB2
R
FB3
Optional:
See DS
C
LTB
R
LTB
NTC
7
9
CI
MON
R
1
R
+3V3
19
+12V
31
33
28
2
R
3
NTC
R
IMON_OS
R
IMON_TOT
Optional:
See DS
+3V3
a. Refer to the application note for the reference schematic.
4/47 Doc ID 15698 Rev 2
L6706Principle application circuit and block diagram
1.2 Block diagram
Figure 2.Block diagram
OSC / FAULT
SSOSC/
FLIMT
VID0
VID1
VID2
VID3
VID4
VID5
VID6
VID7
OSCILLATOR
DIGITAL
SOFT START
DAC
WITH DYNAMIC
VID CONTROL
GND DROP
RECOVERY
INT1
INT2
FBG
INT3
VREF
INT4
BOOT
UGATE
PHASE
VCCDR
LGATE
PGND
VCC
SGND
DGND
SSEND
50uA
INFO
+.1240V
CH CURRENT
READING
+.1240V
20uA
LTB
LTB
OUTEN
OUTEN
I
DROOP
I
OVP
10uA
LTBGAIN
CS-
CS+
OCSET
OCSET
OVPSEL
IMON
LOGIC PWM
ADAPTIVE ANTI
CROSS CONDUCTION
PWM
LTB
INT1
INT2
SSOSC
OUTEN
DROOP
I
CONTROL LOGIC
AND PROTECTIONS
DELIVERED CURRENT
OFFSET
I
ERROR
AMPLIFIER
FB
COMP
INT3
L6706
INT4
OFFSET
I
PWM1
OFFSET
VCC
VCCDR
OCSET
INFO
OVP
COMPARATOR
+.1240V
+175mV
1.800V / OVP
VSEN
Doc ID 15698 Rev 25/47
Pins description and connection diagramsL6706
2 Pins description and connection diagrams
Figure 3.Pins connection (top view)
SSEND
INT2
VID7
VID6
VID5
VID4
VID3
VID2
10
VID1
20
19
18
17
16
15
14
13
12
11
VID0
INT1
CS-
CS+
OUTEN
SSOSC/FLIMIT
OSC/FAULT
OCSET
OVPSEL
OFFSET
INT3
N.C.
INT4
N.C.
VCCDR
LGATE
PGND
PHASE
UGATE
BOOT
N.C.
27 26 25 24 23 22 21
28
30
29
31
32
33
34
35
36
37
38
39
40
123456789
L6706
2.1 Pin description
Table 2.Pin description
N°NameDescription
1DGND
2SGND
3VCC
4COMP
5FB
Digital GND.
It must be connected to PGND (power ground).
All the internal references are referred to this pin.
Connect it to the PCB signal ground.
Device supply voltage pin.
The operative supply voltage is 12 V ±15%. Filter with 1 x 1 µF MLCC capacitor
vs. SGND.
Error amplifier output.
Connect with an R
pulling down this pin.
Error amplifier inverting input pin.
Connect with a resistor R
current proportional to the load current is sourced from this pin in order to
implement the droop effect. See “Droop function” Section for details.
SGND
DGND
VCC
FB
COMP
VSEN
FBG
LT B
IMON
LTBGAIN
- CF//CP vs. FB pin. The device cannot be disabled by
F
vs. VSEN and with an RF - CF//CP vs. COMP pin. A
FB
6VSEN
Output voltage monitor, manages OVP/UVP protections and FB disconnection.
Connect to the positive side of the load to perform remote sense. See “Layout
guidelines” Section for proper layout of this connection.
7FBG
Connect to the negative side of the load to perform remote sense. See “Layout
guidelines” Section for proper layout of this connection.
6/47 Doc ID 15698 Rev 2
L6706Pins description and connection diagrams
Table 2.Pin description (continued)
N°NameDescription
Load transient boost pin.
- C
Internally fixed at 2 V, connecting a R
8LTB
load transient boost technology™: as soon as the device detects a transient
load it turns on the PHASE. Short to SGND to disable the function.See “Load
transient boost technology” Section for details.
Current monitor output pin.
9IMON
A current proportional to the load current is sourced from this pin. Connect
through a resistor R
pin voltage is clamped to 1.1 V max.
Load transient boost technology™ gain pin.
10LTBGAIN
Internally fixed at 1.24 V, connecting a R
setting the GAIN of the LTB action. See See “Load transient boost technology”
Section for details.
Offset programming pin.
Internally fixed at 1.240 V, connecting a R
11OFFSET
setting a current that is mirrored into FB pin in order to program a positive offset
according to the selected RFB. Short to SGND to disable the function.
See “Offset (optional)” Section for details.
Over voltage programming pin.
Internally pulled up by 20 µA (min) to 3.3 V. Leave floating to use built-in
12OVPSEL
protection thresholds (OVPTH= VID + 175 mV typ). Connect to SGND through a
R
voltage according to the R
OVP” Section for details.
LT B
LTBGAIN
OFFSET
vs. V
resistor vs SGND allows
LT B
to SGND (or FBG) to implement a load indicator. The
MON
resistor and filter with 100 pF (max) to set the OVP threshold to a fixed
OVP
resistor.See “Over voltage and programmable
OVP
allows to enable the
OUT
resistor vs. SGND allows
Over current setting, psi action pin.
13OCSET
Connect to SGND through a R
resistor to set the OCP threshold. See
OCSET
“Overcurrent protection” Section for details.
Oscillator, fault pin.
. Frequency is programmed
SW
14
OSC/
FAULT
It allows programming the switching frequency F
according to the resistor connected from the pin vs. SGND or VCC with a gain
of 9.1 kHz/µA (see relevant section for details). Leaving the pin floating
programs a switching frequency of 200 kHz. The pin is forced high (3.3 V typ) to
signal an OVP/UVP fault: to recover from this condition, cycle VCC or the
OUTEN pin. See “Oscillator” Section for details.
Soft-start oscillator pin.
By connecting a resistor RSS to GND, it allows programming the soft-start time.
will proportionally change with a gain of 25 [µs / kΩ]. The
SS
to the programmed VID code. The pin is kept to a
BOOT
has to be considered also when the
BOOT
15
SSOSC/
FLIMIT
Soft-start time T
same slope implemented to reach V
reference moves from V
fixed 1.240 V. See “Soft-start” Section for details. It also allows to select
maximum LTB frequency. See “Load transient boost technology” Sectionfor
details.
Doc ID 15698 Rev 27/47
Pins description and connection diagramsL6706
Table 2.Pin description (continued)
N°NameDescription
Output enable pin.
Internally pulled up by 10 µA (typ) to 3 V. Forced low, the device stops
16OUTEN
17CS+
18CS-
operations with all MOSFETs OFF: all the protections are disabled except for
preliminary over voltage. Leave floating, the device starts-up implementing softstart up to the selected VID code. Cycle this pin to recover latch from
protections; filter with 1 nF (typ) vs. SGND.
Current sense positive input.
Connect through an R-C filter to the phase-side of the output inductor.
See Section 20: Layout guidelines on page 43 for proper layout of this
connection.
Current sense negative input.
Connect through a Rg resistor to the output-side of the output inductor.
See Section 20: Layout guidelines on page 43 for proper layout of this
connection.
19INT1
20 to 27
28INT2
VID0 to
VID7
Test mode pin.
It must be left unconnected or connected to 3.3 V.
Voltage identification pins. (not internally pulled up).
Connect to SGND to program a '0' or connect to the external Pull-up resistor to
program a '1'. They allow programming output voltage as specified in Ta bl e 7 .
Test mode pin.
It must be connected to SGND.
Soft-start end signal.
29SSEND
Open drain output sets free after SS has finished and pulled low when
triggering any protection. Pull up to a voltage lower than 3.3 V, if not used it can
be left floating.
30N.C.Not internally connected.
31INT3
Test mode pin.
It must be connected to 12 V.
32N.C.Not internally connected.
33INT4
Test mode pin.
It must be connected to 12 V.
34N.C.Not internally connected.
LS driver supply.
35VCCDR
VCDDR pin voltage has to be the same of VCC pin.
Filter with 1 x 1 µF MLCC capacitor vs. PGND.
36LGATE
37 PGND
LS driver output.
A small series resistor helps in reducing device-dissipated power.
Power ground pin (LS drivers return path).
Connect to power ground plane.
HS driver return path.
38PHASE
It must be connected to the HS MOSFET source and provides return path for
the HS driver.
8/47 Doc ID 15698 Rev 2
L6706Pins description and connection diagrams
Table 2.Pin description (continued)
N°NameDescription
HS driver output.
39UGATE
It must be connected to the HS MOSFET gate. A small series resistors helps in
reducing device-dissipated power.
HS driver supply.
40BOOT
Connect through a capacitor (100 nF typ.) to PHASE and provide necessary
Bootstrap diode. A small resistor in series to the boot diode helps in reducing
Boot capacitor overcharge.
Exposed pad connects the silicon substrate. As a consequence it makes a
good thermal contact with the PCB to dissipate the power necessary to drive
the external MOSFETs.
Connect it to the power ground plane using 4.3 x 4.3 mm square area on the
PA D
Thermal
PA D
PCB and with nine vias, to improve thermal conductivity.
2.2 Thermal data
Table 3.Thermal data
SymbolParameterValueUnit
R
thJA
R
thJC
T
MAX
T
stg
T
J
Thermal resistance junction to ambient
(Device soldered on 2s2p PC board)
35°C / W
Thermal resistance junction to case1°C / W
Maximum junction temperature150°C
Storage temperature range-40 to 150°C
Junction temperature range-10 to 125°C
Doc ID 15698 Rev 29/47
Electrical specificationsL6706
3 Electrical specifications
3.1 Absolute maximum ratings
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
CC, VCCDR
V
BOOT
V
PHASE
V
UGATE
V
PHASE
V
PHASE
To P GN D1 5V
Boot voltage15V
15V
LGATE to PGND-0.3 to Vcc+0.3V
All other pins to PGND-0.3 to 3.6V
Negative peak voltage to PGND; T < 400 ns
VCC = VCCDR = 12 V
Positive voltage to PGND
VCC = VCCDR = 12 V
Positive peak voltage to PGND; T < 200 ns
VCC = VCCDR = 12 V
-8V
26V
30V
Maximum withstanding voltage range test condition:
CDF-AEC-Q100-002- “human body model”
+/- 1750V
acceptance criteria: “normal performance”
10/47 Doc ID 15698 Rev 2
L6706Electrical specifications
3.2 Electrical characteristics
VCC = 12 V ± 15%, TJ = 0 °C to 70 °C unless otherwise specified
1. According to INTEL specs, the device automatically regulates output voltage 19 mV lower to avoid any
external offset to modify the built-in 0.5% accuracy improving TOB performances. Output regulated voltage
is than what extracted from the table lowered by 19 mV.
(1)
Doc ID 15698 Rev 215/47
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