The L6590 is a monolithic switching regulator designed in BCD OFF-LINEtechnology, able to operate
with wide range input voltage and to deliver up to
15Woutput power. The internal power switch is a lateral power MOSFET with a typical R
and a V
AC line
88 to 264 Vac
(BR)DSS
of 700V minimum.
DRAIN
1
GND
L6590
VFB COMP
3
56, 7, 8
4
Vcc
DS(on)
of 13
Pout
up to 15W
Ω
October 2000
Primary Feedback
Secondary Feedback
1/23
L6590
D
DESCRIPTION
(continued)
The MOSFET is source-grounded, thus it is possible
to build flyback, boost and forward converters.
The device can work with secondary feedback and a
2.5V±2%internal reference,in addition to a high gain
error amplifier, makes possible also the use in applications either with primary feedback or not isolated.
Theinternalfixedoscillator frequencyandthe integrated
non dissipative start-up generator minimize the external
component count and power consumption.
The device is equipped with a standby function that
automatically reduces the oscillator frequency from
65 to 22 kHz under light load conditions to enhance
BLOCK DIAGRAM
DRAIN
(1)
[1]
START-UP
THERMAL
SHUTDOWN
+
-
GND
(6,7,8)
PGND
[9, ..., 16]
OCP
STANDBY
65/22kHz
efficiency (P
<1W@P
in
= 0.5W with wide range
out
mains).
Internal protections like cycle-by-cycle current limiting,
latched output overvoltage protection, mains undervoltage protection (SMD version only) and thermal shutdown generate a 'robust' design solution.
TheIC usesa special leadframe with the ground pins
(6, 7 and 8 in minidip, 9 to16 in SO16W package) internally connected in order for heat to be easily removed from the silicon die. An heatsink can then be
realized by simply making provision of few cm
copper on the PCB. Furthermore, the pin(s) close to
the high-voltage one are not connected to ease compliance with safety distances on the PCB.
[x] : L6590D (SO16W)
CC
V
(3)
SGN
[5]
BOK
[6]
VFB
(5)
[4]
[8]
OSC
SUPPLY
&UVLO
PWM
VREF
+
-
OVP
BROWNOUT
VREF
+
-
+
2.5V
2.5V
2
of
PIN CONNECTIONS
DRAIN
COMP
2/23
(Top view)
N.C.
Vcc
MINIDIP
L6590
GND
GND
GND
VFB
DRAIN
N.C.
N.C.
Vcc
SGND
BOK
COMP
VFB
COMP
[7]
(4)
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
SO16W
L6590D
L6590
PIN FUNCTIONS
Pin#
L6590L6590D
11DRAIN Drain connection of the internal power MOSFET. The internal high voltage start-up
22, 3N.C.Not internally connected. Provision for clearance on the PCB.
34V
47
58VFBInverting input of the Error Amplifier.The non-inverting one is internally connected to a
6 to 8-GNDConnection of both the source of the internal MOSFET and the return of the bias current
-6BOKBrownout Protection. If the voltage applied to this pin is lower than 2.5V the PWM is
-5SGNDCurrent return for the bias current of the IC.
-9 to 16PGNDConnection of the source of the internal MOSFET. Pins connected to the metal frame to
NameDescription
generator sinks current from this pin.
Supply pin of the IC. An electrolytic capacitor is connected between this pin and ground.
CC
The internal start-up generator charges the capacitor until the voltage reaches the startup threshold. The PWM is stopped if the voltage at the pin exceeds a certain value.
COMP
Output of the Error Amplifier. Used for control loop compensation or to directly control
PWM with an optocoupler.
2.5V± 2% reference. This pin can be grounded in some feedback schemes.
of the IC. Pins connected to the metal frame to facilitate heat dissipation.
disabled. This pin is typically used for sensing the input voltage of the converter through
a resistor divider. If not used, the pin can be either left floating or connected to Vcc
through a 15 kΩ resistor.
facilitate heat dissipation.
THERMAL DATA
SymbolParameterMinidipSO16WUnit
R
thj-amb
R
thj-pins
(*) Value depending on PCB copper area and thickness
Thermal Resistance Junction to ambient (*)35 to 6040 to 65°C/W
Thermal Resistance Junction to pins1520°C/W
.
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
I
V
I
clamp
P
T
T
stg
ds
d
cc
tot
Drain Source Voltage-0.3 to 700V
Drain Current0.7A
IC Supply Voltage18V
VccZener Current20mA
Error Amplifier Ouput Sink Current3mA
Voltage on Feedback Input5V
BOK pin Sink Current1mA
Power Dissipation at T
2
, 2 oz copper dissipating area on PCB
3cm
Operating Junction Temperature-40 to 150°C
j
< 50°C (Minidip and SO16W)
amb
1.5W
Storage Temperature-40 to 150°C
3/23
L6590
ELECTRICAL CHARACTERISTCS
(Tj= -25 to 125°C, Vcc= 10V; unless otherwise specified)
SymbolParameterTest ConditionMin.Typ.Max.Unit
POWER SECTION
V
(BR)DSS
I
R
DS(on)
Drain Source VoltageId< 200 µA; Tj= 25 °C700V
Off state drain currentVds= 560V; Tj= 125 °C200µA
dss
Drain-to-Source on resistance
R
vs. Tj: see fig. 20
DS(on)
I
= 120mA; Tj=25°C1316Ω
d
= 120mA; Tj= 125 °C2328
I
d
ERROR AMP SECTION
V
Input VoltageTj= 25 °C2.452.52.55V
FB
= 125°C2.42.52.6
T
j
IbE/A Input Bias CurrentV
= 0 to 2.5 V0.35µA
FB
AvolDC Gainopen loop6070dB
BUnity Gain Bandwidth0.71MHz
SVRSupply voltage Rejectionf = 120 Hz70dB
I
I
source
Output Sink CurrentV
sink
Output Source CurrentV
=1V1mA
COMP
= 3.5V; VFB = 2V-0.5-1-2.5mA
COMP
V
COMPH
V
COMPL
Vout HighI
Vout LowI
OSCILLATOR SECTION
F
D
D
Oscillator FrequencyTj=25°C586572kHz
osc
Min. Duty CycleV
min
Max. Duty CycleV
max
DEVICE OPERATION SECTION
I
I
chargeVCC
V
CCclampVCC
V
Operating Supply Currentfsw = Fosc4.57mA
op
I
Quiescent CurrentMOS disabled3.56mA
Q
charge CurrentVcc=0VtoV
clamp VoltageI
Start Threshold
ccon
voltage
= -0.5mA; VFB=2V3.84.50V
source
= 1mA ; VFB=3V1V
sink
526574
=1V0%
COMP
=4V677073%
COMP
- 0.5V;
V
= 100 to 400V; Tj=25°C
ds
=0VtoV
V
cc
ccon
ccon
- 0.5V;
-3-4.5-7mA
-2.5-4.5-7.5mA
Vds= 100 to 400V
= 10mA (*)16.51717.5V
clamp
(*)1414.515V
V
4/23
V
ccoff
dsmin
Min operating voltage after Turnon(*)66.57V
Drain start voltage40V
L6590
ELECTRICAL CHARACTERISTICS
(continued)
SymbolParameterTest ConditionMin.Typ.Max.Unit
CIRCUIT PROTECTIONS
I
pklim
OVPOvervoltage ProtectionI
Pulse-by-pulse Current Limitdi/dt = 120 mA/ µs550625700mA
= 10 mA (*)1616.517V
cc
LEBMasking TimeAfter MOSFET turn-on (**)120ns
STANDBY SECTION
F
I
pksb
Oscillator Frequency192225kHz
SB
Peak switch current for Standby
Transition from F
osc
to F
SB
80mA
Operation
I
pkno
Peak switch current for Normal
Transition from FSBto F
osc
190mA
Operation
BROWNOUT PROTECTION (L6590D only)
V
I
V
Threshold VoltageVoltage either rising or falling2.42.52.6V
th
Current HysteresisV
Hys
Clamp VoltageI
CL
= 3V-30-50-70µA
pin
= 0.5 mA5.66.47.2V
pin
THERMAL SHUTDOWN (***)
Threshold150165°C
Hysteresis40°C
(*) Parameters tracking one the other
(**) Parameter guaranteed by design, not tested in production
(***) Parameters guaranteed by design, functionality tested in production
Figure 1. Start-up & UVLO ThresholdsFigure 2. Start-up Current Generator
Vcc [V]
16
14
Start-up
12
10
8
6
-50050100150
Tj [°C]
UVLO
Icc [mA]
5.5
5
Vdrain = 40 V
4.5
4
3.5
3
024681012
Vcc [V]
Tj = -25°C
Tj = 25 °C
Tj = 125 °C
5/23
L6590
Figure 3 . Start-up Current Generator
Icc [mA]
5.5
Vdrain = 60 V
Tj = -25 °C
5
Tj = 25°C
4.5
4
Tj = 125°C
3.5
3
024681012
Vcc [V]
Figure 4. IC Consumption Before Start-up
Icc [µA]
700
600
500
400
300
200
Tj = 125°C
Tj = -25 °C
Tj = 25 °C
Figure 6. IC Operating Current
Icc [mA]
5
VFB = 2.3 V
fsw = 65 kHz
4.5
4
Tj = 125°C
Tj = 25 °C
Tj = -25°C
3.5
3
789101112131415
Vcc [V]
Figure 7. IC Operating Current
Icc [mA]
4.4
VFB = 2.3 V
4.2
4
3.8
3.6
3.4
3.2
fsw = 22 kHz
Tj = 125 °C
Tj = 25 °C
Tj = -25°C
100
7 8 9 101112131415
Vcc [V]
Figure 5. IC Quiescent Current
Icc [mA]
4
VFB = 2.7 V
3.8
3.6
3.4
Tj = 125°C
Tj = -25°C
3.2
3
681012141618
Vcc [V]
6/23
Tj = 25°C
3
789101112131415
Vcc [V]
Figure 8. S witching Frequency vs.
Temperature
fsw [kHz]
80
70
60
50
40
30
20
10
-50050100150
Normal operation
Standby
Tj [°C]
L6590
Figure 9 . Vcc clamp vs. Temperature
VCCclamp [V]
18
17.8
17.6
I
clamp
=20mA
17.4
Iclamp =10mA
17.2
17
-50050100150
Tj [°C]
Figure 10. OV P Threshold vs. Temperature
Vth [V]
16
15.8
15.6
15.4
Figure 12. OCP threshold vs. Temperat ure
Ipklim / (Ipklim@ Tj = 25°C)
1.1
1.08
di/dt = 120 mA/µs
1.06
1.04
1.02
1
0.98
-50050100150
Tj [°C]
Figure 13. Internal E/A Referenc e Voltage
Vref [V]
2.6
2.55
2.5
15.2
15
-50050100150
Tj [°C]
Figure 11. OCP Threshold vs. Current Slope
Ipklim / (Ipklim @ di/dt = 120 mA/µs)
1.06
1.04
1.02
1
0.98
0.96
50100150200250
Tj = 25°C
dI/dt[mA/µs]
2.45
2.4
-50050100150
Tj [°C]
Figure 14. Error Amplifier Slew Rate
VCOMP [V]
5
= 100 pF
L
open loop
Ω
4
3
VCOMP
V
FB
RL =10k
C
2
1
0
0 2 4 6 8 10121416
t[µs]
7/23
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