L6590
FULLY INTEGRATED POWER SUPPLY
■WIDE-RANGE MAINS OPERATION
■"ON-CHIP" 700V V(BR)DSS POWER MOS
■65 kHz INTERNAL OSCILLATOR
■2.5V ± 2% INTERNAL REFERENCE
■STANDBY MODE FOR HIGH EFFICIENCY AT LIGHT LOAD
■OVERCURRENT AND LATCHED OVERVOLTAGE PROTECTION
■NON DISSIPATIVE BUILT-IN START-UP CIRCUIT
■THERMAL SHUTDOWN WITH HYSTERESIS
■BROWNOUT PROTECTION (SMD PACKAGE ONLY)
MAIN APPLICATIONS
■WALL PLUG POWER SUPPLIES UP TO 15 W
■AC-DC ADAPTERS
■AUXILIARY POWER SUPPLIES FOR:
-CRT AND LCD MONITOR (BLUE ANGEL)
-DESKTOP PC/SERVER
-FAX, TV, LASER PRINTER
MINIDIP |
SO16W |
ORDERING NUMBERS: |
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L6590N |
L6590D |
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- HOME APPLIANCES/LIGHTING
■LINE CARD, DC-DC CONVERTERS
DESCRIPTION
The L6590 is a monolithic switching regulator designed in BCD OFF-LINE technology, able to operate with wide range input voltage and to deliver up to 15W output power. The internal power switch is a lat-
eral power MOSFET with a typical RDS(on) of 13Ω and a V(BR)DSS of 700V minimum.
TYPICAL APPLICATION CIRCUIT
AC line |
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Pout |
AC line |
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Pout |
88 to 264 Vac |
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up to 15W |
88 to 264 Vac |
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up to 15W |
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DRAIN |
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DRAIN |
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1 |
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L6590 |
Vcc |
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L6590 |
Vcc |
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3 |
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3 |
6, 7, 8 |
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6, 7, 8 |
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4 |
GND |
COMP |
VFB |
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GND |
VFB |
COMP |
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Primary Feedback |
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Secondary Feedback |
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L6590
DESCRIPTION (continued)
The MOSFET is source-grounded, thus it is possible to build flyback, boost and forward converters.
The device can work with secondary feedback and a 2.5V±2% internal reference, in addition to a high gain error amplifier, makes possible also the use in applications either with primary feedback or not isolated.
The internal fixed oscillator frequency and the integrated non dissipative start-up generator minimize the external component count and power consumption.
The device is equipped with a standby function that automatically reduces the oscillator frequency from 65 to 22 kHz under light load conditions to enhance
BLOCK DIAGRAM
efficiency (Pin < 1W @ Pout = 0.5W with wide range mains).
Internal protections like cycle-by-cycle current limiting, latched output overvoltage protection, mains undervoltage protection (SMD version only) and thermal shutdown generate a 'robust' design solution.
The IC uses a special leadframe with the ground pins (6, 7 and 8 in minidip, 9 to16 in SO16W package) internally connected in order for heat to be easily removed from the silicon die. An heatsink can then be realized by simply making provision of few cm2 of copper on the PCB. Furthermore, the pin(s) close to the high-voltage one are not connected to ease compliance with safety distances on the PCB.
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[x] : L6590D (SO16W) |
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(1) [1] |
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START-UP |
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VCC |
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VREF |
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(3) [4] |
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THERMAL |
SUPPLY |
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& UVLO |
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SHUTDOWN |
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+ |
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- |
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SGND |
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OVP |
VREF |
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[5] |
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BROWNOUT |
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BOK |
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- |
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GND |
OCP |
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[6] |
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2.5V |
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(6,7,8) |
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PWM |
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PGND |
STANDBY |
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VFB |
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[9, ..., 16] |
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- |
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OSC |
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(5) [8] |
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65/22 kHz |
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+ |
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2.5V |
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COMP |
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(4) [7] |
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PIN CONNECTIONS (Top view)
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DRAIN |
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PGND |
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DRAIN |
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GND |
N.C. |
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PGND |
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N.C. |
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PGND |
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N.C. |
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GND |
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Vcc |
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PGND |
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Vcc |
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GND |
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SGND |
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PGND |
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COMP |
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VFB |
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BOK |
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PGND |
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COMP |
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PGND |
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MINIDIP |
VFB |
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PGND |
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L6590 |
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SO16W |
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L6590D |
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L6590 |
PIN FUNCTIONS |
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Pin# |
Name |
Description |
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L6590 |
L6590D |
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1 |
1 |
DRAIN |
Drain connection of the internal power MOSFET. The internal high voltage start-up |
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generator sinks current from this pin. |
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2 |
2, 3 |
N.C. |
Not internally connected. Provision for clearance on the PCB. |
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3 |
4 |
VCC |
Supply pin of the IC. An electrolytic capacitor is connected between this pin and ground. |
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The internal start-up generator charges the capacitor until the voltage reaches the start- |
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up threshold. The PWM is stopped if the voltage at the pin exceeds a certain value. |
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4 |
7 |
COMP |
Output of the Error Amplifier. Used for control loop compensation or to directly control |
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PWM with an optocoupler. |
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5 |
8 |
VFB |
Inverting input of the Error Amplifier. The non-inverting one is internally connected to a |
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2.5V± 2% reference. This pin can be grounded in some feedback schemes. |
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6 to 8 |
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GND |
Connection of both the source of the internal MOSFET and the return of the bias current |
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of the IC. Pins connected to the metal frame to facilitate heat dissipation. |
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6 |
BOK |
Brownout Protection. If the voltage applied to this pin is lower than 2.5V the PWM is |
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disabled. This pin is typically used for sensing the input voltage of the converter through |
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a resistor divider. If not used, the pin can be either left floating or connected to Vcc |
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through a 15 kΩ resistor. |
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5 |
SGND |
Current return for the bias current of the IC. |
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9 to 16 |
PGND |
Connection of the source of the internal MOSFET. Pins connected to the metal frame to |
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facilitate heat dissipation. |
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THERMAL DATA
Symbol |
Parameter |
Minidip |
SO16W |
Unit |
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Rthj-amb |
Thermal Resistance Junction to ambient (*) |
35 to 60 |
40 to 65 |
°C/W |
Rthj-pins |
Thermal Resistance Junction to pins |
15 |
20 |
°C/W |
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(*) Value depending on PCB copper area and thickness.
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
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Vds |
Drain Source Voltage |
-0.3 to 700 |
V |
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Id |
Drain Current |
0.7 |
A |
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Vcc |
IC Supply Voltage |
18 |
V |
Iclamp |
Vcc Zener Current |
20 |
mA |
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Error Amplifier Ouput Sink Current |
3 |
mA |
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Voltage on Feedback Input |
5 |
V |
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BOK pin Sink Current |
1 |
mA |
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Ptot |
Power Dissipation at Tamb < 50°C (Minidip and SO16W) |
1.5 |
W |
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3 cm2, 2 oz copper dissipating area on PCB |
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Tj |
Operating Junction Temperature |
-40 to 150 |
°C |
Tstg |
Storage Temperature |
-40 to 150 |
°C |
3/23
L6590
ELECTRICAL CHARACTERISTCS (Tj = -25 to 125°C, Vcc = 10V; unless otherwise specified)
Symbol |
Parameter |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
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POWER SECTION |
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V(BR)DSS |
Drain Source Voltage |
Id < 200 µA; Tj = 25 °C |
700 |
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V |
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Idss |
Off state drain current |
Vds = 560V; Tj = 125 °C |
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200 |
µA |
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RDS(on) |
Drain-to-Source on resistance |
Id = 120mA; Tj = 25 °C |
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16 |
Ω |
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RDS(on) vs. Tj: see fig. 20 |
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Id = 120mA; Tj = 125 °C |
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28 |
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ERROR AMP SECTION |
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VFB |
Input Voltage |
Tj = 25 °C |
2.45 |
2.5 |
2.55 |
V |
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Tj = 125°C |
2.4 |
2.5 |
2.6 |
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Ib |
E/A Input Bias Current |
VFB = 0 to 2.5 V |
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0.3 |
5 |
µA |
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Avol |
DC Gain |
open loop |
60 |
70 |
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dB |
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B |
Unity Gain Bandwidth |
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0.7 |
1 |
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MHz |
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SVR |
Supply voltage Rejection |
f = 120 Hz |
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70 |
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dB |
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Isink |
Output Sink Current |
VCOMP = 1V |
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1 |
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mA |
Isource |
Output Source Current |
VCOMP = 3.5V; VFB = 2V |
-0.5 |
-1 |
-2.5 |
mA |
VCOMPH |
Vout High |
Isource = -0.5mA; VFB=2V |
3.8 |
4.50 |
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VCOMPL |
Vout Low |
Isink = 1mA ; VFB=3V |
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1 |
V |
OSCILLATOR SECTION |
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Fosc |
Oscillator Frequency |
Tj = 25 °C |
58 |
65 |
72 |
kHz |
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52 |
65 |
74 |
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Dmin |
Min. Duty Cycle |
VCOMP = 1V |
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% |
Dmax |
Max. Duty Cycle |
VCOMP = 4V |
67 |
70 |
73 |
% |
DEVICE OPERATION SECTION |
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Iop |
Operating Supply Current |
fsw = Fosc |
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4.5 |
7 |
mA |
IQ |
Quiescent Current |
MOS disabled |
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3.5 |
6 |
mA |
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Icharge |
VCC charge Current |
Vcc = 0V to Vccon - 0.5V; |
-3 |
-4.5 |
-7 |
mA |
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Vds = 100 to 400V; Tj = 25°C |
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Vcc = 0V to Vccon - 0.5V; |
-2.5 |
-4.5 |
-7.5 |
mA |
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Vds = 100 to 400V |
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VCCclamp |
VCC clamp Voltage |
Iclamp = 10mA (*) |
16.5 |
17 |
17.5 |
V |
Vccon |
Start Threshold |
(*) |
14 |
14.5 |
15 |
V |
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voltage |
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Vccoff |
Min operating voltage after Turn |
(*) |
6 |
6.5 |
7 |
V |
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on |
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Vdsmin |
Drain start voltage |
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40 |
V |
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L6590 |
ELECTRICAL CHARACTERISTICS (continued) |
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Symbol |
Parameter |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
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CIRCUIT PROTECTIONS |
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Ipklim |
Pulse-by-pulse Current Limit |
di/dt = 120 mA/ µs |
550 |
625 |
700 |
mA |
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OVP |
Overvoltage Protection |
Icc = 10 mA (*) |
16 |
16.5 |
17 |
V |
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LEB |
Masking Time |
After MOSFET turn-on (**) |
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120 |
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STANDBY SECTION |
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FSB |
Oscillator Frequency |
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22 |
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kHz |
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Ipksb |
Peak switch current for Standby |
Transition from Fosc to FSB |
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mA |
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Operation |
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Ipkno |
Peak switch current for Normal |
Transition from FSB to Fosc |
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190 |
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mA |
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Operation |
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BROWNOUT PROTECTION (L6590D only) |
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Vth |
Threshold Voltage |
Voltage either rising or falling |
2.4 |
2.5 |
2.6 |
V |
IHys |
Current Hysteresis |
Vpin = 3V |
-30 |
-50 |
-70 |
µA |
VCL |
Clamp Voltage |
Ipin = 0.5 mA |
5.6 |
6.4 |
7.2 |
V |
THERMAL SHUTDOWN (***) |
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Threshold |
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150 |
165 |
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°C |
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Hysteresis |
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40 |
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°C |
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(*) Parameters tracking one the other |
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(**) Parameter guaranteed by design, not tested in production
(***) Parameters guaranteed by design, functionality tested in production
Figure 1. Start-up & UVLO Thresholds
Vcc [V]
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Start-up |
12
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UVLO |
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6 |
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0 |
50 |
100 |
150 |
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-50 |
Tj [°C]
Figure 2. Start-up Current Generator
Icc [mA]
5.5 |
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5 |
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Vdrain = 40 V |
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Tj = -25 °C |
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4.5 |
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Tj = 25 °C |
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3.5 |
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Tj = 125 °C |
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2 |
4 |
6 |
8 |
10 |
12 |
0 |
Vcc [V]
5/23
L6590
Figure 3. Start-up Current Generator |
Figure 6. IC Operating Current |
Icc [mA] |
Icc [mA] |
5.5 |
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5 |
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Vdrain = 60 V |
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Tj = -25 °C |
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VFB = 2.3 V |
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Tj = 125 °C |
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fsw = 65 kHz |
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4.5 |
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Tj = 25 °C |
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Tj = 25 °C |
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4.5 |
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4 |
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Tj = -25 °C |
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4 |
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Tj = 125 °C |
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3.5 |
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3.5 |
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3 |
2 |
4 |
6 |
8 |
10 |
12 |
3 |
8 |
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10 |
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12 |
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14 |
15 |
0 |
7 |
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Vcc [V] |
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Vcc [V] |
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Figure 4. IC Consumption Before Start-up |
Figure 7. IC Operating Current |
Icc [µA] |
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Icc [mA] |
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700 |
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4.4 |
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VFB = 2.3 V |
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Tj = -25 °C |
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600 |
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4.2 |
fsw = 22 kHz |
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Tj = 125 °C |
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500 |
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4 |
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Tj = 25 °C |
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400 |
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Tj = 25 °C |
3.8 |
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Tj = -25 °C |
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3.6 |
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Tj = 125 °C |
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300 |
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3.4 |
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200 |
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3.2 |
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100 |
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15 |
3 |
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15 |
7 |
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Vcc [V] |
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Vcc [V] |
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Figure 5. IC Quiescent Current |
Figure 8. Switching Frequency vs. |
Icc [mA] |
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Temperature |
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4 |
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fsw [kHz] |
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VFB = 2.7 V |
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Tj = 25 °C |
80 |
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3.8 |
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70 |
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Normal operation |
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3.6 |
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60 |
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50 |
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3.4 |
Tj = 125 °C |
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40 |
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3.2 |
Tj = -25 °C |
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30 |
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Standby |
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3 |
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20 |
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18 |
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6 |
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Vcc [V] |
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10 |
0 |
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150 |
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-50 |
Tj [°C]
6/23
L6590
Figure 9. Vcc clamp vs. Temperature |
Figure 12. OCP threshold vs. Temperature |
VCCclamp [V] |
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Ipklim / (Ipklim @ Tj = 25°C) |
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18 |
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1.1 |
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17.8 |
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1.08 |
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di/dt = 120 mA/µs |
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17.6 |
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1.06 |
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Iclamp = 20 mA |
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1.04 |
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17.4 |
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1.02 |
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Iclamp = 10 mA |
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17.2 |
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1 |
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17 |
0 |
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0.98 |
0 |
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150 |
-50 |
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Tj [°C] |
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Tj [°C] |
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Figure 10. OVP Threshold vs. Temperature |
Figure 13. Internal E/A Reference Voltage |
Vth [V] |
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Vref [V] |
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16 |
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2.6 |
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15.8 |
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2.55 |
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15.6 |
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2.5 |
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15.4 |
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15.2 |
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2.45 |
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15 |
0 |
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2.4 |
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-50 |
-50 |
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Tj [°C] |
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Tj [°C] |
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Figure 11. OCP Threshold vs. Current Slope |
Figure 14. Error Amplifier Slew Rate |
Ipklim / (Ipklim @ di/dt = 120 mA/µs) |
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VCOMP [V] |
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1.06 |
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5 |
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1.04 |
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Tj = 25 °C |
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4 |
VCOMP |
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RL = 10 kΩ |
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CL = 100 pF |
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open loop |
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1.02 |
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3 |
VFB |
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1 |
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2 |
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0.98 |
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1 |
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0.96 |
100 |
150 |
200 |
250 |
0 |
2 |
4 |
6 |
8 |
10 |
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16 |
50 |
0 |
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dI/dt [mA/µs] |
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t [µs] |
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7/23