ST L6571B User Manual

L6571A

L6571B

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

■HIGH VOLTAGE RAIL UP TO 600V

■BCD OFF LINE TECHNOLOGY

■15.6V ZENER CLAMP ON VS

■DRIVER CURRENT CAPABILITY:

-SINK CURRENT = 270mA

-SOURCE CURRENT = 170mA

■VERY LOW START UP CURRENT: 150μA

■UNDER VOLTAGE LOCKOUT WITH HYSTERESIS

■PROGRAMMABLE OSCILLATOR FREQUENCY

■DEAD TIME 1.25μs (L6571A) or 0.72μs (L6571B)

■dV/dt IMMUNITY UP TO ±50V/ns

■ESD PROTECTION

DESCRIPTION

The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capaci-

Minidip	SO8
ORDERING NUMBERS:
L6571A	L6571AD
L6571B	L6571BD

tor. The internal circuitry of the device allows it to be driven also by external logic signal.

The output drivers are designed to drive external n- channel power MOSFET and IGBT. The internal logic assures a dead time to avoid cross-conduction of the power devices.

Two version are available: L6571A and L6571B. They differ in the internal dead time: 1.25μs and 0.72μs (typ.)

BLOCK DIAGRAM

					RHV			H.V.
			CVS
				VS		BOOT
				1		8
				BIAS	LEVEL	7	HVG	CBOOT
			REGULATOR		SHIFTER	HIGH
						SIDE
				VS		DRIVER
	RF	2	BUFFER
						6	OUT	LOAD
RF
	CF	3	COMP
CF						VS
						LOW SIDE
			COMP	LOGIC		DRIVER	LVG
	GND	4				5
								D96IN433

September 2000

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L6571A L6571B

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
IS (*)	Supply Current	25	mA
VCF	Oscillator Resistor Voltage	18	V
VLVG	Low Side Switch Gate Output	14.6	V
VOUT	High Side Switch Source Output	-1 to VBOOT - 18	V
VHVG	High Side Switch Gate Output	-1 to VBOOT	V
VBOOT	Floating Supply Voltage	618	V
VBOOT/OUT	Floating Supply vs OUT Voltage	18	V
dVBOOT/dt	VBOOT Slew Rate (Repetitive)	± 50	V/ns
dVOUT/dt	VOUT Slew Rate (Repetitive)	± 50	V/ns
Tstg	Storage Temperature	-40 to 150	°C
Tj	Junction Temperature	-40 to 150	°C
Tamb	Ambient Temperature (Operative)	-40 to 125	°C

(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source.

Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)

THERMAL DATA

Symbol	Parameter	Minidip	SO8	Unit
Rth j-amb	Thermal Resistance Junction-Ambient Max	100	150	°C/W

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter	Min.	Max.	Unit
VS	Supply Voltage	10	VCL	V
VBOOT	Floating Supply Voltage	-	500	V
VOUT	High Side Switch Source Output	-1	VBOOT -VCL	V
fout	Oscillation Frequency		200	kHz

PIN CONNECTION

VS	1	8	BOOT
RF	2	7	HVG
CF	3	6	OUT
GND	4	5	LVG
		D94IN059

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L6571A L6571B

PIN FUNCTION

N°	Pin	Description
1	VS	Supply input voltage with internal clamp [typ. 15.6V]
2	RF	Oscillator timing resistor pin.
		A buffer set alternatively to VS and GND can provide current to the external resistor RF
		connected between pin 2 and 3.
		Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to
		drive a full H-bridge)
3	CF	Oscillator timing capacitor pin.
		A capacitor connected between this pin and GND fixes (together with RF) the oscillating
		frequency
		Alternatively an external logic signal can be applied to the pin to drive the IC.
4	GND	Ground
5	LVG	Low side driver output.
		The output stage can deliver 170mA source and 270mA sink [typ.values].
6	OUT	Upper driver floating reference
7	HVG	High side driver output.
		The output stage can deliver 170mA source and 270mA sink [typ.values].
8	BOOT	Bootstrap voltage supply.
		It is the upper driver floating supply.

ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.)

Symbol	Pin		Parameter	Test Condition	Min.	Typ.	Max.	Unit
VSUVP	1		VS Turn On Threshold		8.3	9	9.7	V
VSUVN			VS Turn Off Threshold		7.3	8	8.7	V
VSUVH			VS Hysteresis		0.7	1	1.3	V
VCL			VS Clamping Voltage	IS = 5mA	14.6	15.6	16.6	V
ISU			Start Up Current	VS < VSUVN		150	250	μA
Iq			Quiescent Current	VS > VSUVP		500	700	μA
IBOOTLK	8		Leakage Current BOOT pin vs	VBOOT = 580V			5	μA
			GND
IOUTLK	6		Leakage Current OUT pin vs	VOUT = 562V			5	μA
			GND
IHVG SO	7		High Side Driver Source Current	VHVG = 6V	110	175		mA
IHVG SI			High Side Driver Sink Current	VHVG = 6V	190	275		mA
ILVG SO	5		Low Side Driver Source Current	VLVG = 6V	110	175		mA
ILVG SI			Low Side Driver Sink Current	VLVG = 6V	190	275		mA
VRFON	2		RF High Level Output Voltage	IRF = 1mA	VS -0.05		VS -0.2	V
VRF OFF			RF Low Level Output Voltage	IRF = -1mA	50		200	mV
VCFU	3		CF Upper Threshold		7.7	8	8.2	V
VCFL			CF Lower Threshold		3.80	4	4.3	V
td			Internal Dead Time	L6571A	0.85	1.25	1.65	μs
				L6571B	0.50	0.72	0.94	μs

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