ST L6571A User Manual

L6571A

L6571A

L6571B

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

TECHNOLOGY: BCD ºOFF-LINEº FLOATING SUPPLY VOLTAGE UP TO 600V

GND REFERRED SUPPLY VOLTAGE UP TO 18V

DRIVER CURRENT CAPABILITY:

-SINK CURRENT = 270mA

-SOURCE CURRENT = 170mA

VERY LOW START UP CURRENT: 150μA VERY LOW OPERATING CURRENT: <2mA UNDERVOLTAGE LOCKOUT PROGRAMMABLE OSCILLATOR FREQUENCY

dV/dt IMMUNITY UP TO ± 50V/ns

Minidip

SO8

ORDERING NUMBERS:

L6571A

L6571AD

L6571B

L6571BD

DESCRIPTION

The device is a high voltage half bridge driver with built-in oscillator. The frequency of the oscillator can be programmed using external resistor

BLOCK DIAGRAM

and capacitor.

The output drivers are designed to drive external n-channel power MOSFET and IGBT. The internal logic assures a minimum dead time to avoid cross-conduction of the power devices.

H.V.

CVS

RHV

VS

BOOT

 

 

BIAS

 

LEVEL

 

HVG

CBOOT

 

 

 

 

 

 

 

REGULATOR

SHIFTER

HIGH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SIDE

 

 

 

 

 

VS

 

DRIVER

 

 

 

RF

BUFFER

 

 

 

 

 

 

 

 

 

 

 

OUT

LOAD

RF

 

 

 

 

 

 

CF

COMP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VS

 

 

CF

 

 

 

 

LOW SIDE

 

 

 

 

COMP

LOGIC

 

DRIVER

LVG

 

 

 

 

 

 

GND

D96IN433

June 2000

1/7

L6571A - L6571B

ABSOLUTE MAXIMUM RATINGS

Symbol

IS (*)

VCF

VLVG

VOUT

VHVG

VBOOT

VBOOT/OUT

dVBOOT/dt

dVOUT/dt

Tstg

Tj

Tamb

Parameter

Value

Unit

Supply Current

25

mA

Oscillator Resistor Voltage

18

V

Low Side Switch Gate Output

14.6

V

High Side Switch Source Output

-1 to VBOOT - 18

V

High Side Switch Gate Output

-1 to VBOOT

V

Floating Supply Voltage

618

V

Floating Supply vs OUT Voltage

18

V

VBOOT Slew Rate (Repetitive)

± 50

V/ns

VOUT Slew Rate (Repetitive)

± 50

V/ns

Storage Temperature

-40 to 150

°C

Junction Temperature

-40 to 150

°C

Ambient Temperature (Operative)

-40 to 125

°C

(*)The device has an internal zener clamp between GND and VS (typical 15.6V). Therefore the circuit should not be driven by a DC low impedance power source.

Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)

THERMAL DATA

Symbol

Parameter

 

Minidip

SO8

Unit

Rth j-amb

Thermal Resistance Junction-Ambient

Max

100

150

°C/W

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min.

Max.

Unit

VS

Supply Voltage

10

VCL

V

VBOOT

Floating Supply Voltage

-

500

V

VOUT

High Side Switch Source Output

-1

VBOOT -VCL

V

fout

Oscillation Frequency

 

200

kHz

PIN CONNECTION

VS

1

8

BOOT

RF

2

7

HVG

CF

3

6

OUT

GND

4

5

LVG

 

 

D94IN059

 

2/7

ST L6571A User Manual

L6571A - L6571B

ELECTRICAL CHARACTERISTICS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unlessotherwise specified.)

Symbol

Pin

Parameter

Test Condition

Min.

Typ.

Max.

Unit

VSUVP

1

VS Turn On Threshold

 

8.3

9

9.7

V

VSUVN

 

VS Turn Off Threshold

 

7.3

8

8.7

V

VSUVH

 

VS Hysteresis

 

0.7

1

1.3

V

VCL

 

VS Clamping Voltage

IS = 5mA

14.6

15.6

16.6

V

ISU

 

Start Up Current

VS < VSUVN

 

150

250

μA

Iq

 

Quiescent Current

VS > VSUVP

 

500

700

μA

IBOOTLK

8

Leakage Current BOOT pin vs

VBOOT = 580V

 

 

5

μA

 

 

GND

 

 

 

 

 

IOUTLK

6

Leakage Current OUT pin vs GND

VOUT = 562V

 

 

5

μA

IHVG SO

7

High Side Driver Source Current

VHVG = 6V

110

175

 

mA

IHVG SI

 

High Side Driver Sink Current

VHVG = 6V

190

275

 

mA

ILVG SO

5

Low Side Driver Source Current

VLVG = 6V

110

175

 

mA

ILVG SI

 

Low Side Driver Sink Current

VLVG = 6V

190

275

 

mA

VRFON

2

RF High Level Output Voltage

IRF = 1mA

VS -0.05

 

VS -0.2

V

VRF OFF

 

RF Low Level Output Voltage

IRF = -1mA

50

 

200

mV

VCFU

3

CF Upper Threshold

 

7.7

7.95

8.2

V

VCFL

 

CF Lower Threshold

 

3.80

4.05

4.3

V

td

 

Internal Dead Time

L6571A

0.85

1.25

1.65

μs

 

 

 

L6571B

0.50

0.72

0.94

μs

DC

 

Duty Cycle, Ratio Between

 

0.45

0.5

0.55

 

 

 

Dead Time + Conduction Time

 

 

 

 

 

 

 

of High Side and Low Side

 

 

 

 

 

 

 

Drivers

 

 

 

 

 

IAVE

1

Average Current from Vs

No Load, fs = 60KHz

 

1.2

1.5

mA

fout

6

Oscillation Frequency

RT = 12k

57

60

63

kHz

 

 

 

CT = 1nF

 

 

 

 

OSCILLATOR FREQUENCY

The frequency of the internal oscillator can be programmed using external resistor and capacitor. The nominal oscillator frequency can be calculated using the following equation:

Figure 2: WAVEFORMS

fOSC=

1

=

1

2 RF CF In 2

1.3863 RF CF

where RF and CF are the external resistor and capacitor

VS

VSUVP

VCF

LVG

T1

D96IN434

 

TC

3/7

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