ST L6569, L6569A User Manual

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■HIGH VOLTAGE RAIL UP TO 600V

■BCD OFF LINE TECHNOLOGY

■INTERNAL BOOTSTRAP DIODE STRUCTURE

■15.6V ZENER CLAMP ON VS

■DRIVER CURRENT CAPABILITY:

-SINK CURRENT = 270mA

-SOURCE CURRENT = 170mA

■VERY LOW START UP CURRENT: 150μA

■UNDER VOLTAGE LOCKOUT WITH HYSTERESIS

■PROGRAMMABLE OSCILLATOR FREQUENCY

■DEAD TIME 1.25μs

■dV/dt IMMUNITY UP TO ±50V/ns

■ESD PROTECTION

DESCRIPTION

The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can

BLOCK DIAGRAM

			CVS	VS
				1
				Source
				BIAS
			REGULATOR
				VS
	RF	2	BUFFER
RF	CF	3	COMP
CF
			COMP	LOGIC
	GND	4

L6569

L6569A

HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

Minidip	SO8
ORDERING NUMBERS:
L6569	L6569D
L6569A	L6569AD

be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.

The output drivers are designed to drive external n- channel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25μs] to avoid crossconduction of the power devices.

Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.

H.V.

RHV	BOOT
	8
CHARGE
PUMP
LEVEL	7	HVG	CBOOT
SHIFTER
	HIGH
	SIDE
	DRIVER
	6	OUT	LOAD
	VS
	LOW SIDE
	DRIVER	LVG
	5
			D94IN058D

June 2000

1/13

This is preliminary information on a new product now in development. Details are subject to change without notice.

L6569 L6569A

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
IS (*)	Supply Current	25	mA
VCF	Oscillator Resistor Voltage	18	V
VLVG	Low Side Switch Gate Output	14.6	V
VOUT	High Side Switch Source Output	-1 to VBOOT - 18	V
VHVG	High Side Switch Gate Output	-1 to VBOOT	V
VBOOT	Floating Supply Voltage	618	V
VBOOT/OUT	Floating Supply vs OUT Voltage	18	V
dVBOOT/dt	VBOOT Slew Rate (Repetitive)	± 50	V/ns
dVOUT/dt	VOUT Slew Rate (Repetitive)	± 50	V/ns
Tstg	Storage Temperature	-40 to 150	°C
Tj	Junction Temperature	-40 to 150	°C
Tamb	Ambient Temperature (Operative)	-40 to 125	°C

(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source.

Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)

THERMAL DATA

Symbol	Parameter	Minidip	SO8	Unit
Rth j-amb	Thermal Resistance Junction-Ambient Max	100	150	°C/W

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter	Min.	Max.	Unit
VS	Supply Voltage	10	VCL	V
VBOOT	Floating Supply Voltage	-	500	V
VOUT	High Side Switch Source Output	-1	VBOOT -VCL	V
fout	Oscillation Frequency		200	kHz

PIN CONNECTION

VS	1	8	BOOT
RF	2	7	HVG
CF	3	6	OUT
GND	4	5	LVG
		D94IN059

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L6569 L6569A

PIN FUNCTION

N°	Pin	Description
1	VS	Supply input voltage with internal clamp [typ. 15.6V]
2	RF	Oscillator timing resistor pin.
		A buffer set alternatively to VS and GND can provide current to the external resistor RF
		connected between pin 2 and 3.
		Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569 to drive
		a full H-bridge)
3	CF	Oscillator timing capacitor pin.
		A capacitor connected between this pin and GND fixes (together with RF) the oscillating
		frequency
		Alternatively an external logic signal can be applied to the pin to drive the IC.
4	GND	Ground
5	LVG	Low side driver output.
		The output stage can deliver 170mA source and 270mA sink [typ.values].
6	OUT	Upper driver floating reference
7	HVG	High side driver output.
		The output stage can deliver 170mA source and 270mA sink [typ.values].
8	BOOT	Bootstrap voltage supply.
		It is the upper driver floating supply. The bootstrap capacitor connected between this pin and pin

6 can be fed by an internal structure named ªbootstrap driverº (a patented structure). This structure can replace the external bootstrap diode.

ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.)

Symbol	Pin	Parameter	Test Condition	Min.	Typ.	Max.	Unit
VSUVP	1	VS Turn On Threshold		8.3	9	9.7	V
VSUVN		VS Turn Off Threshold		7.3	8	8.7	V
VSUVH		VS Hysteresis		0.7	1	1.3	V
VCL		VS Clamping Voltage	IS = 5mA	14.6	15.6	16.6	V
ISU		Start Up Current	VS < VSUVN		150	250	μA
Iq		Quiescent Current	VS > VSUVP		500	700	μA
IBOOTLK	8	Leakage Current BOOT pin vs	VBOOT = 580V			5	μA
		GND
IOUTLK	6	Leakage Current OUT pin vs	VOUT = 562V			5	μA
		GND
IHVG SO	7	High Side Driver Source Current	VHVG = 6V	110	175		mA
IHVG SI		High Side Driver Sink Current	VHVG = 6V	190	275		mA
ILVG SO	5	Low Side Driver Source Current	VLVG = 6V	110	175		mA
ILVG SI		Low Side Driver Sink Current	VLVG = 6V	190	275		mA

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L6569 L6569A

ELECTRICAL CHARACTERISTCS (continued)

Symbol	Pin	Parameter	Test Condition	Min.	Typ.	Max.	Unit
VRFON	2	RF High Level Output Voltage	IRF = 1mA	VS -0.05		VS -0.2	V
VRF OFF		RF Low Level Output Voltage	IRF = -1mA	50		200	mV
VCFU	3	CF Upper Threshold		7.7	8	8.2	V
VCFL		CF Lower Threshold		3.80	4	4.3	V
td		Internal Dead Time		0.85	1.25	1.65	μs
DC		Duty Cycle, Ratio Between Dead		0.45	0.5	0.55
		Time + Conduction Time of High
		Side and Low Side Drivers
RON		On resistance of Boostrap			120		Ω
		LDMOS
VBC		Boostrap Voltage before UVLO	VS = 8.2	2.5	3.6		V
IAVE	1	Average Current from Vs	No Load, fs = 60KHz		1.2	1.5	mA
fout	6	Oscillation Frequency	RT = 12K; CT = 1nF	57	60	63	kHz

OSCILLATOR FREQUENCY

The frequency of the internal oscillator can be programmed using external resistor and capacitor. The nominal oscillator frequency can be calculated using the following equation:

	fOSC	=		1		=	1
			---R-----F------	--C----F-------	-I--n2------		----R----F------	--C-----F
		2				1.3863

Where RF and CF are the external resistor and capacitor.

The device can be driven in ºshut downº condition keeping the CF pin close to GND, but some cares have to be taken:

1.When CF is to GND the high side driver is off and the low side is on

2.The forced discharge of the oscillator capacitor CF must not be shorter than 1us: a simple way to do this is to limit the current discharge with a resistive path imposing R ´ CF >1μs (see fig.1)

Figure 1.

	1	8
R	2	7
	RF
fault signal	3	6
	C
	F	5
	4
	GNDM

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