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■HIGH VOLTAGE RAIL UP TO 600V
■BCD OFF LINE TECHNOLOGY
■INTERNAL BOOTSTRAP DIODE STRUCTURE
■15.6V ZENER CLAMP ON VS
■DRIVER CURRENT CAPABILITY:
-SINK CURRENT = 270mA
-SOURCE CURRENT = 170mA
■VERY LOW START UP CURRENT: 150μA
■UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
■PROGRAMMABLE OSCILLATOR FREQUENCY
■DEAD TIME 1.25μs
■dV/dt IMMUNITY UP TO ±50V/ns
■ESD PROTECTION
DESCRIPTION
The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can
BLOCK DIAGRAM
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CVS |
VS |
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1 |
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Source |
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BIAS |
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REGULATOR |
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VS |
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RF |
2 |
BUFFER |
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RF |
CF |
3 |
COMP |
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CF |
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COMP |
LOGIC |
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GND |
4 |
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L6569
L6569A
HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR
Minidip |
SO8 |
ORDERING NUMBERS: |
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L6569 |
L6569D |
L6569A |
L6569AD |
be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.
The output drivers are designed to drive external n- channel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25μs] to avoid crossconduction of the power devices.
Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.
H.V.
RHV |
BOOT |
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8 |
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CHARGE |
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PUMP |
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LEVEL |
7 |
HVG |
CBOOT |
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SHIFTER |
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HIGH |
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SIDE |
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DRIVER |
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6 |
OUT |
LOAD |
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VS |
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LOW SIDE |
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DRIVER |
LVG |
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5 |
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D94IN058D |
June 2000 |
1/13 |
This is preliminary information on a new product now in development. Details are subject to change without notice.
L6569 L6569A
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
Value |
Unit |
IS (*) |
Supply Current |
25 |
mA |
VCF |
Oscillator Resistor Voltage |
18 |
V |
VLVG |
Low Side Switch Gate Output |
14.6 |
V |
VOUT |
High Side Switch Source Output |
-1 to VBOOT - 18 |
V |
VHVG |
High Side Switch Gate Output |
-1 to VBOOT |
V |
VBOOT |
Floating Supply Voltage |
618 |
V |
VBOOT/OUT |
Floating Supply vs OUT Voltage |
18 |
V |
dVBOOT/dt |
VBOOT Slew Rate (Repetitive) |
± 50 |
V/ns |
dVOUT/dt |
VOUT Slew Rate (Repetitive) |
± 50 |
V/ns |
Tstg |
Storage Temperature |
-40 to 150 |
°C |
Tj |
Junction Temperature |
-40 to 150 |
°C |
Tamb |
Ambient Temperature (Operative) |
-40 to 125 |
°C |
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low impedance power source.
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
Symbol |
Parameter |
Minidip |
SO8 |
Unit |
Rth j-amb |
Thermal Resistance Junction-Ambient Max |
100 |
150 |
°C/W |
RECOMMENDED OPERATING CONDITIONS
Symbol |
Parameter |
Min. |
Max. |
Unit |
VS |
Supply Voltage |
10 |
VCL |
V |
VBOOT |
Floating Supply Voltage |
- |
500 |
V |
VOUT |
High Side Switch Source Output |
-1 |
VBOOT -VCL |
V |
fout |
Oscillation Frequency |
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200 |
kHz |
PIN CONNECTION
VS |
1 |
8 |
BOOT |
RF |
2 |
7 |
HVG |
CF |
3 |
6 |
OUT |
GND |
4 |
5 |
LVG |
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D94IN059 |
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2/13
L6569 L6569A
PIN FUNCTION
N° |
Pin |
Description |
1 |
VS |
Supply input voltage with internal clamp [typ. 15.6V] |
2 |
RF |
Oscillator timing resistor pin. |
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A buffer set alternatively to VS and GND can provide current to the external resistor RF |
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connected between pin 2 and 3. |
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Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569 to drive |
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a full H-bridge) |
3 |
CF |
Oscillator timing capacitor pin. |
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A capacitor connected between this pin and GND fixes (together with RF) the oscillating |
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frequency |
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Alternatively an external logic signal can be applied to the pin to drive the IC. |
4 |
GND |
Ground |
5 |
LVG |
Low side driver output. |
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The output stage can deliver 170mA source and 270mA sink [typ.values]. |
6 |
OUT |
Upper driver floating reference |
7 |
HVG |
High side driver output. |
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The output stage can deliver 170mA source and 270mA sink [typ.values]. |
8 |
BOOT |
Bootstrap voltage supply. |
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It is the upper driver floating supply. The bootstrap capacitor connected between this pin and pin |
6 can be fed by an internal structure named ªbootstrap driverº (a patented structure). This structure can replace the external bootstrap diode.
ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT - VOUT = 12V; Tj = 25°C; unless otherwise specified.)
Symbol |
Pin |
Parameter |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
VSUVP |
1 |
VS Turn On Threshold |
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8.3 |
9 |
9.7 |
V |
VSUVN |
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VS Turn Off Threshold |
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7.3 |
8 |
8.7 |
V |
VSUVH |
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VS Hysteresis |
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0.7 |
1 |
1.3 |
V |
VCL |
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VS Clamping Voltage |
IS = 5mA |
14.6 |
15.6 |
16.6 |
V |
ISU |
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Start Up Current |
VS < VSUVN |
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150 |
250 |
μA |
Iq |
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Quiescent Current |
VS > VSUVP |
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500 |
700 |
μA |
IBOOTLK |
8 |
Leakage Current BOOT pin vs |
VBOOT = 580V |
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5 |
μA |
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GND |
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IOUTLK |
6 |
Leakage Current OUT pin vs |
VOUT = 562V |
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5 |
μA |
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GND |
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IHVG SO |
7 |
High Side Driver Source Current |
VHVG = 6V |
110 |
175 |
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mA |
IHVG SI |
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High Side Driver Sink Current |
VHVG = 6V |
190 |
275 |
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mA |
ILVG SO |
5 |
Low Side Driver Source Current |
VLVG = 6V |
110 |
175 |
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mA |
ILVG SI |
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Low Side Driver Sink Current |
VLVG = 6V |
190 |
275 |
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mA |
3/13
L6569 L6569A
ELECTRICAL CHARACTERISTCS (continued)
Symbol |
Pin |
Parameter |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
VRFON |
2 |
RF High Level Output Voltage |
IRF = 1mA |
VS -0.05 |
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VS -0.2 |
V |
VRF OFF |
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RF Low Level Output Voltage |
IRF = -1mA |
50 |
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200 |
mV |
VCFU |
3 |
CF Upper Threshold |
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7.7 |
8 |
8.2 |
V |
VCFL |
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CF Lower Threshold |
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3.80 |
4 |
4.3 |
V |
td |
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Internal Dead Time |
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0.85 |
1.25 |
1.65 |
μs |
DC |
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Duty Cycle, Ratio Between Dead |
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0.45 |
0.5 |
0.55 |
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Time + Conduction Time of High |
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Side and Low Side Drivers |
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RON |
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On resistance of Boostrap |
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120 |
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Ω |
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LDMOS |
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VBC |
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Boostrap Voltage before UVLO |
VS = 8.2 |
2.5 |
3.6 |
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IAVE |
1 |
Average Current from Vs |
No Load, fs = 60KHz |
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1.2 |
1.5 |
mA |
fout |
6 |
Oscillation Frequency |
RT = 12K; CT = 1nF |
57 |
60 |
63 |
kHz |
OSCILLATOR FREQUENCY
The frequency of the internal oscillator can be programmed using external resistor and capacitor. The nominal oscillator frequency can be calculated using the following equation:
fOSC |
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1 |
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---R-----F------ |
--C----F------- |
-I--n2------ |
----R----F------ |
--C-----F |
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2 |
1.3863 |
Where RF and CF are the external resistor and capacitor.
The device can be driven in ºshut downº condition keeping the CF pin close to GND, but some cares have to be taken:
1.When CF is to GND the high side driver is off and the low side is on
2.The forced discharge of the oscillator capacitor CF must not be shorter than 1us: a simple way to do this is to limit the current discharge with a resistive path imposing R ´ CF >1μs (see fig.1)
Figure 1.
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1 |
8 |
R |
2 |
7 |
RF |
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fault signal |
3 |
6 |
C |
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F |
5 |
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4 |
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GNDM |
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4/13