ST L6230 User Manual

L6230

DMOS driver for three-phase brushless DC motor

Features

■Operating supply voltage from 8 to 52 V

■2.8 A output peak current (1.4 A RMS)

■RDS(on) 0.73 Ω typ. value @ TJ = 25 °C

■Integrated fast free wheeling diodes

■Operating frequency up to 100 kHz

■Non dissipative overcurrent detection and protection

■Cross conduction protection

■Diagnostic output

■Uncommitted comparator

■Thermal shutdown

■Under voltage lockout

Application

■BLDC motor driving

■Sinusoidal / 6-steps driving

■Field oriented control driving system

PowerSO36

VFQFPN32

Description

The L6230 is a DMOS fully integrated threephase motor driver with overcurrent protection, optimized for FOC application thanks to the independent current senses.

Realized in BCDmultipower technology, the device combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip.

An uncommitted comparator with open-drain output is available.

Available in PowerSO36 and VFQFPN-32 5x5 packages the L6230 features a non dissipative overcurrent protection on the high side power MOSFETs and thermal shutdown.

Table 1.	Device summary
	Order codes	Package	Packaging
	L6230PD	PowerSO36	Tube
	L6230PDTR		Tape and reel
	L6230Q	VFQFPN32	Tube
	L6230QTR		Tape and reel

June 2011

Doc ID 18094 Rev 2

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Contents	L6230

Contents

1	Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 4
	2.1	Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	4
	2.2	Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	4
	2.3	Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	5
3	Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		6
4	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		8
5	Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		11
	5.1	Power stages and charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	11
	5.2	Logic inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	12
	5.3	Non-dissipative overcurrent detection and protection . . . . . . . . . . . . . . .	13
6	Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		15
	6.1	Field oriented control driving method . . . . . . . . . . . . . . . . . . . . . . . . . . . .	15
	6.2	Six-step driving method with current control . . . . . . . . . . . . . . . . . . . . . .	16
	6.3	Six-step driving method with BEMF zero crossing detection . . . . . . . . . .	17
	6.4	Thermal management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	18
7	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		19
8	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		23

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L6230	Block diagram

1 Block diagram

Figure 1. Block diagram

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Electrical data	L6230

2 Electrical data

2.1Absolute maximum ratings

Table 2.	Absolute maximum ratings
Symbol		Parameter	Parameter	Value	Unit
VS		Supply voltage	VSA = VSB = VS	60	V
		Differential voltage between: VSA,	VSA = VSB = VS = 60 V;
VOD		OUT1, OUT2, SENSEA and VSB,		60	V
			VSENSEx = GND
		OUT3, SENSEB
VBOOT		Bootstrap peak voltage	VSA = VSB = VS	VS + 10	V
VIN, VEN		Logic inputs voltage range		-0.3 to +7	V
VCP-, VCP+		Voltage range at CPand CP+ pins		-0.3 to +7	V
VSENSE		Voltage range at SENSEx pins		-1 to +4	V
IS(peak)		Pulsed supply current (for each VS	VSA = VSB = VS;	3.55	A
		pin)	TPULSE < 1 ms
IS		RMS supply current (for each VS	VSA = VSB = VS	1.4	A
		pin)
Tstg, TOP		Storage and operating temperature		-40 to 150	°C
		range

2.2Recommended operating conditions

Table 3.	Recommended operating conditions
Symbol		Parameter	Parameter	Min	Max	Unit
VS		Supply voltage	VSA = VSB = VS	8	52	V
		Differential voltage between VSA,	VSA = VSB = VS;
VOD		OUT1A, OUT2A, SENSEA and VSB,	VSENSE1 = VSENSE2 =		52	V
		OUT1B, OUT2B, SENSEB	VSENSE3
VCP-, VCP+		Voltage range at CPand CP+ pins		-0.1	5	V
VCPCM		Common mode voltage at the		0	3	V
		comparator inputs
VSENSE		Voltage range at pins SENSEx	pulsed tW < trr	-6	6	V
			DC	-1	1	V
IOUT		RMS output current			1.4	A
TJ		Operating junction temperature		-25	+125	°C
fsw		Switching frequency			100	kHz

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L6230	Electrical data

2.3Thermal data

	Table 4.	Thermal data
	Symbol	Parameter	Value		Unit
			PowerSO36	QFN32
	R	Maximum thermal resistance junction-ambient (1)	36	-	°C/W
	th(j-amb)1
	R	Maximum thermal resistance junction-ambient (2)	16	-	°C/W
	th(j-amb)1
	R	Maximum thermal resistance junction-ambient (3)	63	-	°C/W
	th(j-amb)2
	R	Maximum thermal resistance junction-ambient (4)	-	42	°C/W
	th(j-amb)3

1.Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm).

2.Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6 cm2 (with a thickness of 35 µm), 16 via holes and a ground layer.

3.Mounted on a multi-layer FR4 PCB without any heat-sinking surface on the board.

4.Mounted on a double-layer FR4 PCB with a dissipating copper surface of 0.5 cm2 on the top side plus 6 cm2 ground layer connected through 18 via holes (9 below the IC).

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Pin connection	L6230

3 Pin connection

Figure 2. Pin connection PowerSO36 (top view)

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Note:	The pins 2 to 8 are connected to die PAD.
	The die PAD must be connected to GND pin.

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L6230			Pin connection
	Table 5.	Pin description
	Pin	Type	Function
	VBOOT	Power supply	Bootstrap voltage needed for driving the upper power MOSFETs.
	VCP	Output	Charge pump oscillator output.
			Double function: chip Enable as input and Overcurrent/Over-temperature
			indication as output.
		Logic	LOW logic level switches OFF all Power MOSFETs, putting the power
	DIAG-EN		stages in high impedance status.
		output/input
			An internal open drain transistor pulls to GND the pin when an overcurrent
			on one of the High Side MOSFETs is detected or during Thermal
			Protection.
	IN1	Logic input	Logic input half bridge 1.
	EN1	Logic input	Enable input half bridge 1.
	IN2	Logic input	Logic input half bridge 2.
	EN2	Logic input	Enable input half bridge 2.
	IN3	Logic input	Logic input half bridge 3.
	EN3	Logic input	Enable input half bridge 3.
	CP-	Analog input	Inverting input of internal comparator.
	CP+	Analog input	Non-Inverting input of internal comparator.
	CPOUT	Output	Open-drain output of internal comparator.
	SENSE3		Half bridge 3 source pin. This pin must be connected to power ground
			through a sensing power resistor.
	OUT3	Power output	Output half bridge 3.
	VSB	Power supply	Half bridge 3 power supply voltage. it must be connected to the supply
			voltage together with pin VSA.
	SENSE2		Half bridge 2 source pin. This pin must be connected to power ground
			through a sensing power resistor.
	OUT2	Power output	Output half bridge 2.
	SENSE1		Half bridge 1 source pin. This pin must be connected to power ground
			through a sensing power resistor.
	OUT1	Power output	Output half bridge 1.
	VSA	Power supply	Half bridge 1 and half bridge 2 power supply voltage. It must be connected
			to the supply voltage together with pin VSB.
	GND	Ground	Ground terminal.

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Electrical characteristics						L6230
4	Electrical characteristics
	(VS = 48 V, TA = 25 °C, unless otherwise specified)
Table 6.	Electrical characteristics
Symbol	Parameter	Test condition	Min	Typ	Max	Unit
VSth(ON)	Turn-on threshold		5.8	6.3	6.8	V
VSth(OFF)	Turn-off threshold		5	5.5	6	V
IS	Quiescent supply current	All bridges OFF;		5	10	mA
		(1)
		TJ = -25 °C to 125 °C
Tj(OFF)	Thermal shutdown temperature			165		°C
Output DMOS transistors
RDS(on)	High-side / low-side switch ON	TJ = 25 °C		0.73	0.85	Ω
	resistance	TJ =125 °C (1)		1.18	1.35	Ω
IDSS	Leakage current	DIAG-EN = LOW; OUT = VS			2	mA
		DIAG-EN = LOW; OUT = GND	-0.3			mA
Source drain diodes
VSD	Forward ON voltage	ISD = 1.4 A, DIAG-EN = LOW		1.15	1.3	V
trr	Reverse recovery time	If = 1.4 A		300		ns
tfr	Forward recovery time			200		ns
Logic inputs (INx, ENx, DIAG-EN)
VIL	Low level logic input voltage				0.8	V
VIH	High level logic input voltage		2			V
IIL	Low level logic input current	GND logic input voltage	-10			µA
IIH	High level logic input current	7 V logic input voltage			10	µA
Switching characteristics
tD(ON)EN	Enable to output turn-on delay		500	650	800	ns
	time (2)
t	Enable to output turn-off delay time (2)		500		1000	ns
D(OFF)EN
tD(ON)IN	Other logic inputs to OUT turn-ON delay			1.6		µs
	time	ILOAD = 1.4 A, resistive load
tD(OFF)IN	Other logic inputs to OUT turn-OFF			800		ns
	delay time
tRISE	Output rise time (2)		40		250	ns
t	Output fall time (2)		40		250	ns
FALL
tDT	Dead time		0.5	1		µs
f	Charge pump frequency	T = -25 °C to 125 °C (1)		0.6	1	MHz
CP		J

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