ST ISA012V1 User Manual
Features
STEVAL-ISA012V1
3 phase power supply with VIPer and Power MOSFETs
Data Brief
■ Minimum AC input voltage = 90 V
■ Maximum AC input voltage = 450 V
■ Time of hold up capability > 50 ms
■ Mean input power < 6 W (in compliance with
AC
AC
IEC62053-21)
■ Input connections allowed:
– 1-phase with neutral
– 2-phase without neutral
– 3-phase with neutral
■ V
■ V
■ Maximum precision error = 3%
■ Maximum ripple voltage = 50 mV
■ Line regulation = +/- 1%
■ Load regulation = +/- 1%
■ Output power (peak) = 550 mW
OUT1
OUT2
= 5 V, I
OUT1
= 3.3 V, I
= 10 mA
= 100 mA
OUT2
Description
This reference design represents a cost effective
solution for low power high voltage power
supplies. It has been developed to cover
applications requiring an ultra-wide input voltage
range (between 90 and 450 V
phase applications. This requires the use of very
high voltage components, which increases cost,
size, weight and the overall complexity of the
power supply. The circuit includes a switching
transistor connected between the input rectifier
and the DC bulk capacitor (STMicroelectronics
patent). The series switch limits the DC input
voltage of the power converter by means of a
driving circuit; thus the SMPS primary transistor
can be selected as a standard part as well as a
smart power primary IC.
), typical of three-
AC
STEVAL-ISA012V1
Typical end applications for this solution can be
found in the industrial market in the range below 5
W, such as three-phase and single-phase power
meters, industrial bias power supplies and
auxiliary SMPS for high voltage street lighting,
where the input voltage can range from 90 V
450 V
and 1000 V Power MOSFETs are
AC
AC
to
currently used.
November 2007 Rev 1 1/4
For further information contact your local STMicroelectronics sales office.
www.st.com
4
Board schematic STEVAL-ISA012V1
1 Board schematic
Figure 1. Schematic
3.3V@100mA
1
U2 L4931ABD33
8
4
+
R7
R6
R5
LL4148
GND
4.7K
SMD
1K
SMD
12
U4
PC817
43
220E SMD
R9
C8
50V
SMD
R8
TS2431
3
4.7K SMD
3
2 1
C10
47nF
50V
SMD
S
1
S
2
VIPer12AS
FB
C9
100nF
U3
5.6K SMD
D
8
D
7
D
6
D
5
U1
Vdd
4
+
10uF 50V
C7
2.2uF 25V
INH
5
NC
4
VOUT
GND
7
GND
6
GND
3
GND
2
VIN
5
D7
R4
10E
SMD
D4
180V
D3
180V
VDD
5V@10mA
L2
10uH 100mA SMD
D6
TMBAT49
C1
Q1
NTC1
10
2.2nF/ 2kV (Y1)
T1
1
D5
1
STD3NK50Z
2 3
50E
R1
3.3V
+
C6
22uF 25V
+
C5
330uF 25V
6
2
2.2uF450V
+
C4
SOD-80
ZMM 1 5
R3
330K SMD
330K SMD
R2
330K SMD
D1
2
RV1
SO5K275/275V
P1
C2
220nF
3
-+
4
RV2
SO5K275/275V
L1
1mH
RF1
22E 0.75W
630V
SMD
BRID GE
RF2
1
22E 0.75W
P2NP3
C3
630V
SMD
220nF
3
D2
2
-+
4
RV3
RF3
22E 0.75W
2/4
SO5K275/275V
BRID GE
1
RF4
22E 0.75W
Layout Hin ts: Q1 mounted on 1cm x 0.8cm copper
area. C8&C 10 have to be c losed to the VI Per12AS.
GND Pins f or U2 have to b e soldered to a unique
Note:
copper are a.
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