JESD13B " STANDARD SPECIF ICATIONS
FOR DESCRIPTI ON OF B SERI ES CMOS
DEVICES"
DESCRIPTION
The HCF4093B is a m onolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
DIPSOP
ORDER CODES
PACKAGETUBET & R
DIPHCF4093BEY
SOPHCF4093BM1HCF4093M013TR
The HCF4093B type consists of four schmitt
trigger circuits. Each circuit functions as a two
input NAND gate with schmitt trigger action on
both inputs. The gate switches at different points
for positive and negative going signals. The
difference between the positive voltage (V
the negative voltage (V
voltage (V
).
H
) is defined as hysteresis
N
) and
P
PIN CONNECTION
1/7September 2001
HCF4093B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN NoSYMBOLNAME AND FUNCTION
1, 2, 5, 6, 8,
9, 12, 13
3, 4, 10, 11 J, K, L, MData Outputs
7
14
TRUTH TABLE
A, C, E, GB, D, F, HJ, K, L, M
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referr ed to V
Supply Voltage
DD
DC Input Voltage-0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package200mW
D
Power Dissipation per Output Transistor100mW
Operating Temperature
The Noi se Margin fo r both "1" and "0" level is: 1V m i n. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
a : Input on terminals 1, 5, 8, 12 or 2, 6, 9, 13 ; ot her inputs t o V
b : Input on terminals 1 an d 2, 5 and 6, 8 and 9, or 12 and 13; oth er i nputs to V
0/18Any Input18
Any Input57.5pF
.
DD
DD
±10
.
-5
-40 to 85°C -55 to 125°C
±0.1±1±1µA
HCF4093B
Unit
µA
V0/10<1109.959.959.95
V10/0<1100.050.050.05
V
V
V
mA
mA0/100.5<1101.12.60.90.9
3/7
HCF4093B
DYNAMIC ELECTRICAL CHARACTERISTICS (T
SymbolParameter
t
PLH tPHL
t
TLH tTHL
(*) Typical temperature coefficient for a ll VDD value is 0.3 %/°C.
Propagation Delay Time5190380
Output Transition Time5100200
(V)
V
DD
1565130
154080
TEST CIRCUIT
= 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
amb
Test ConditionValue (*)Unit
Min.Typ.Max.
ns1090180
ns1050100
CL = 50pF or equivalent (in cludes jig and probe capaci tance)
R
= 200KΩ
L
= Z
R
of pulse generator (typically 50Ω)
T
OUT
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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