Features
■ Schmidt trigger action on each input with no
external components
■ Hysteresis voltage typically 0.9 V at V
and 2.3 V at V
■ Noise immunity greater than 50% of V
■ No limit on input rise and fall times
■ Quiescent current specified up to 20 V
■ Standardized symmetrical output
DD
=10 V
characteristics
■ 5 V, 10 V and 15 V parametric ratings
■ Input leakage current
■ I
= 100 nA (max) at VDD=18V TA=25°C
I
■ 100% tested for quiescent current
■ Meets all requirements of JEDEC JESD13B
"Standard Specifications for Description of B
Series CMOS Devices"
DD
DD
=5V
(typ.)
HCF4093
QUAD 2-input NAND Schmidt trigger
DIP-14
Description
The HCF4093 is a monolithic integrated circuit
fabricated in metal oxide semiconductor
technology available in DIP and SOP packages.
The HCF4093 type consists of 4 schmitt trigger
circuits. Each circuit functions has a 2-input
NAND gate with schmitt trigger action on both
inputs. The gate switches at different points for
positive and negative going signals. The
difference between the positive voltage (V
the negative voltage (V
voltage (V
).
H
SOP-14
) and
) is defined as hysteresis
N
P
Table 1. Device summary
Order code Package Packaging
HCF4093BEY DIP-14 Tube
HCF4093M013TR SOP-14 Tape and Reel
August 2007 Rev 2 1/13
www.st.com
13
Pin settings HCF4093
1 Pin settings
1.1 Pin connection
Figure 1. HCF4093B pin connection
Figure 2. Input equivalent circuit
Table 2. Pin description
Pin number Symbol Name and function
1, 2, 5, 6, 8, 9, 12, 13 A, B, C, D, E, F, G, H Data Inputs
3, 4, 10, 11 J, K, L, M Data Outputs
7V
14 V
SS
DD
Negative Supply Voltage
Positive Supply Voltage
2/13
HCF4093 Pin settings
Table 3. Truth table
Inputs Outputs
A, C, E, G B, D, F, H J, K, L, M
LLH
LHH
HLH
HHL
3/13
Maximum ratings HCF4093
2 Maximum ratings
Stressing the device above the rating list ed in the “Absolute Maximum Ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any ot her conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may aff ect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
Supply voltage -0.5 to + 22 V
DD
DC Input voltage -0.5 to VDD + 0.5 V
V
I
I
DC Input current ± 10 mA
I
Power dissipation per package 200 mW
P
D
Power dissipation per output transistor 100 mW
T
T
Operating temperature -55 to +125 °C
op
Storage temperature -65 to +150 °C
stg
2.1 Recommended operating conditions
Table 5. Recommended operating conditions
Symbol Parameter Value Unit
V
DD
V
I
T
op
Supply voltage 3 to 20 V
Input voltage 0 to V
Operating temperature -55 to 125 °C
DD
V
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