ST HCF4070 User Manual
Features
■ Medium-speed operation
t
= t
PHL
V
DD
■ Quiescent current specified up to 20 V
■ 5 V, 10 V and 15 V parametric ratings
■ Input leakage current
I
= 100 nA (max) at VDD = 18 V, TA = 25 °C
I
■ 100% tested for quiescent current
= 70 ns (typ) at CL = 50 pF and
PLH
= 10 V
Quad exclusive OR gate
SO14
Description
HCF4070
Datasheet − production data
DIP14
Applications
■ Automotive
■ Industrial
■ Computer
■ Consumer
The HCF4070 is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP14 and SO14
packages.
The HCF4070 contains four independent
exclusive OR gates. This device provides the
system designer with a means for direct
implementation of the exclusive OR gate for
applications such as logical comparators,
adders/subtractors, parity generators and
checkers.
Table 1. Device summary
Order code Temperature range Package
HCF4070M013TR –55 °C to +125 °C SO14
HCF4070YM013TR
HCF4070BEY –55 °C to +125 °C DIP14
1. Qualification and characterization (according to AEC Q100 and Q003 or equivalent) and advanced screening (according to
AEC Q001 and Q002 or equivalent) are ongoing.
(1)
–40 °C to +125 °C SO14 (automotive grade)
June 2012 Doc ID 2061 Rev 4 1/11
This is information on a product in full production.
www.st.com
11
Device overview HCF4070
1 Device overview
Figure 1. Pin connections
Table 2. Pin description
Pin number Symbol/name Function
1, 5, 8, 12 A, C, E, G Data inputs
2, 6, 9, 13 B, D, F, H Data inputs
3, 4, 10, 11 J, K, L, M Data outputs
7V
14 V
Figure 2. Input equivalent circuit
SS
DD
Negative supply voltage
Positive supply voltage
2/11 Doc ID 2061 Rev 4
HCF4070 Device overview
Figure 3. Logic diagram
Table 3. Truth table
Inputs Output
A, C, E, G B, D, F, H J, K, L, M
LL L
LH H
HL H
HH L
Table 4. Absolute maximum ratings
Symbol Parameter Value Unit
V
DD
V
I
I
Supply voltage -0.5 to +22 V
DC input voltage -0.5 to VDD + 0.5 V
I
DC input current ± 10 mA
Power dissipation per package 200 mW
P
D
T
op
T
stg
Power dissipation per output transistor 100 mW
Operating temperature -55 to +125 °C
Storage temperature -65 to +150 °C
Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
All voltage values are relative to the V
Table 5. Recommended operating conditions
Symbol Parameter Value Unit
pin voltage.
SS
V
DD
V
Supply voltage 3 to 20 V
Input voltage 0 to V
I
DD
V
SO14, DIP14 -55 to 125 °C
T
Operating temperature
op
SO14 (automotive grade) -40 to 125 °C
Doc ID 2061 Rev 4 3/11
Device overview HCF4070
Table 6. DC specifications
Sym. Parameter
V
(V)
0/5 5 0.02 1 30 30
0/10 10 0.02 2 60 60
ILQuiescent current
0/15 15 0.02 4 120 120
0/20 20 0.04 20 600 600
0/5 <1 5 4.95 4.95 4.95
High-level output
V
OH
voltage
0/15 <1 15 14.95 14.95 14.95
5/0 <1 5 0.05 0.05 0.05
Low-level output
V
OL
voltage
15/0 <1 15 0.05 0.05 0.05
High-level input
V
IH
voltage
Low-level input
V
IL
voltage
0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1
Test condition Value
V
I
(V)
|I
|
O
(μA)
V
DD
(V)
O
TA = 25°C -40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
0.5/4.5 <1 5 3.5 3.5 3.5
1.5/13.5 <1 15 11 11 11
4.5/0.5 <1 5 1.5 1.5 1.5
13.5/1.5 <1 15 4 4 4
Unit
μA
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 7 7 7
V9/1 <1 10 3 3 3
I
Output drive current
OH
0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9
0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4
0/5 0.4 <1 5 0.44 1 0.36 0.36
0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36
Output sink current
I
OL
0/15 1.5 <1 15 3.0 6.8 2.4 2.4
IIInput leakage current 0/18 Any Input 18 ±10-5±0.1 ±1 ±1 μA
Input capacitance Any Input 5 7.5 pF
C
I
The noise margin for both the "1" and "0" level is: 1 V min. with V
V
= 10 V, 2.5 V min. with V
DD
DD
= 15 V.
= 5 V, 2 V min. with
DD
4/11 Doc ID 2061 Rev 4
mA
mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9
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