The HCF4070 is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP14 and SO14
packages.
The HCF4070 contains four independent
exclusive OR gates. This device provides the
system designer with a means for direct
implementation of the exclusive OR gate for
applications such as logical comparators,
adders/subtractors, parity generators and
checkers.
Table 1.Device summary
Order codeTemperature rangePackage
HCF4070M013TR–55 °C to +125 °CSO14
HCF4070YM013TR
HCF4070BEY–55 °C to +125 °CDIP14
1. Qualification and characterization (according to AEC Q100 and Q003 or equivalent) and advanced screening (according to
AEC Q001 and Q002 or equivalent) are ongoing.
(1)
–40 °C to +125 °CSO14 (automotive grade)
June 2012Doc ID 2061 Rev 41/11
This is information on a product in full production.
www.st.com
11
Device overviewHCF4070
1 Device overview
Figure 1.Pin connections
Table 2.Pin description
Pin numberSymbol/nameFunction
1, 5, 8, 12A, C, E, G Data inputs
2, 6, 9, 13B, D, F, HData inputs
3, 4, 10, 11J, K, L, MData outputs
7V
14V
Figure 2.Input equivalent circuit
SS
DD
Negative supply voltage
Positive supply voltage
2/11Doc ID 2061 Rev 4
HCF4070Device overview
Figure 3.Logic diagram
Table 3.Truth table
InputsOutput
A, C, E, GB, D, F, HJ, K, L, M
LLL
LHH
HLH
HHL
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
DD
V
I
I
Supply voltage-0.5 to +22V
DC input voltage-0.5 to VDD + 0.5V
I
DC input current± 10mA
Power dissipation per package200mW
P
D
T
op
T
stg
Power dissipation per output transistor100mW
Operating temperature-55 to +125°C
Storage temperature-65 to +150°C
Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
All voltage values are relative to the V
Table 5.Recommended operating conditions
SymbolParameterValueUnit
pin voltage.
SS
V
DD
V
Supply voltage3 to 20V
Input voltage0 to V
I
DD
V
SO14, DIP14-55 to 125°C
T
Operating temperature
op
SO14 (automotive grade)-40 to 125°C
Doc ID 2061 Rev 43/11
Device overviewHCF4070
Table 6.DC specifications
Sym.Parameter
V
(V)
0/550.0213030
0/10100.0226060
ILQuiescent current
0/15150.024120120
0/20200.0420600600
0/5<154.954.954.95
High-level output
V
OH
voltage
0/15<11514.9514.9514.95
5/0<150.050.050.05
Low-level output
V
OL
voltage
15/0<1150.050.050.05
High-level input
V
IH
voltage
Low-level input
V
IL
voltage
0/52.5<15-1.36-3.2-1.15-1.1
Test conditionValue
V
I
(V)
|I
|
O
(μA)
V
DD
(V)
O
TA = 25°C-40 to 85°C -55 to 125°C
Min.Typ. Max.Min.Max. Min.Max.
0.5/4.5<153.53.53.5
1.5/13.5 <115111111
4.5/0.5<151.51.51.5
13.5/1.5 <115444
Unit
μA
V0/10<1109.959.959.95
V10/0<1100.050.050.05
V1/9<110777
V9/1<110333
I
Output drive current
OH
0/109.5<110-1.1-2.6-0.9-0.9
0/1513.5<115-3.0-6.8-2.4-2.4
0/50.4<150.4410.360.36
0/54.6<15-0.44-1-0.36-0.36
Output sink current
I
OL
0/151.5<1153.06.82.42.4
IIInput leakage current 0/18Any Input18±10-5±0.1±1±1μA
Input capacitanceAny Input57.5pF
C
I
The noise margin for both the "1" and "0" level is: 1 V min. with V
V
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
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