JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4060B is a monolithic integrated circuit
fabricatedinMetalOxideSemiconductor
technology available in DIP and SOP packages.
The HCF4060B consists of an oscillator section
and 14 ripple carry binary counter stages.
The oscillator configuration allows design of either
RC or crystal oscillator circuits. A RESET input is
provided which reset the counter to the all 0’s
HCF4060B
DIPSOP
ORDER CODES
PACKAGETUBET & R
DIPHCF4060BEY
SOPHCF4060BM1HCF4060M013TR
state and disable oscillator. A high level on the
RESET line accomplishes the reset function. All
counter stages are master slave flip-flops. The
state of t he counter is advanced one step in binary
order on the negative transition o f φ
inputs and outputs are fully buffered. Schmitt
trigger action on the clock pin permits unlimited
clock rise and fall t ime.
(and φ0). All
1
PIN CO NNECTION
1/10August 2003
HCF4060B
INPUT EQUIVALENT CIRCUITPIN DESCRIPTION
FUNCTIONAL DIAGRAM
PIN NoSYMBOL
Q
1, 2, 3, 4,5,
6, 7, 13,14,
15
9, 10, 11
12,Q13,Q14
Q
6,Q5,Q7,Q4
Q
9,Q8,Q10
, Φ0, Φ
Φ
0
12RESETReset
8
16
V
SS
V
DD
NAME AND
FUNCTION
,
,
Outputs
Oscillator Input
1
Negative Supply Voltage
Positive Supply Voltage
LOGIC DIAGRAM
2/10
HCF4060B
ABSOLUTE MAXIMUM RATINGS
SymbolParameterValueUnit
V
V
P
T
T
stg
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltagevalues arereferredto V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
T
Supply Voltage
DD
DC Input Voltage-0.5 to VDD+ 0.5
I
DC Input Current
I
I
Power Dissipation per Package200mW
D
-0.5 to +22V
± 10mA
Power Dissipation per Output Transistor100mW
Operating Temperature
The Noise Margin for both "1"and "0"level is:1V min.with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18Any Input18
Any Input57.5pF
±10
-5
-40 to 85°C -55 to 125°C
±0.3±0.3±1µA
Unit
µA
V0/10<1109.959.959.95
V10/0<1100.050.050.05
V1/9<110777
V9/1<110333
mA
mA0/100.5<1101.12.60.90.9
4/10
HCF4060B
DYNAMIC EL ECTRICAL CHARACTERISTICS (T
= 25° C, CL= 50pF, RL= 200KΩ,tr=tf=20ns)
amb
Test ConditionValue (*)Unit
SymbolParameter
(V)
V
DD
t
TLHtTHL
Output Transition Time5100200
154080
t
PLHtPHL
Propagation Delay Time (φ
out)
to Q
4
5370740
15100200
t
PLHtPHL
Propagation Delay Time
to Q
(Q
n
n+1
)
5100200
154080
t
Input Pulse Width5
W
f = 100 KHz
151530
t
Input Pulse Rise and Fall
rtf
Time
5
15
f
Maximum Clock Input
max
Frequency
53.57
151224
RESET OPERATION
t
Propagation Delay Time5180360
PHL
1550100
t
Input Pulse Width560120
W
152040
RC OPERATION
Variation of Frequency
(Unit-to-Unit)
5
C
= 200pF, RS= 560KΩ, RX=50KΩ
X
1521.12427
Variation of Frequency
With Voltage Change
(Same Unit)
R
X
C
X
Maximum Oscillator
Frequency (**)
(*) Typical temperature coefficient for all VDDvalues is 0.3%/°C, all input rise and fall times= 20 ns.
(**)RCOscillator applications are notrecommendedat supplyvoltagesbelow 7V for R
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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