14-STAGE RIPPLE CARRY BINARY
COUNTER/DIVIDER AND OSCILLATOR
■ MEDIUM-SPEED OPERATION
■ COMMON RESET
■ FULLY STATIC OPERATION
■ BUFFERED INPUTS AND OUTPUTS
■ QUIESCENT CURRENT SPECIFIED UP TO
20V
■ 5V, 10V AND 15V PARAMETRIC RATINGS
■ INPUT LEAKAGE CURRENT
I
= 100nA (MAX) AT VDD=18VTA= 25°C
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B "STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4060B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4060B consists of an oscillator section
and 14 ripple carry binary counter stages.
The oscillator configuration allows design of either
RC or crystal oscillator circuits. A RESET input is
provided which reset the counter to the all 0’s
HCF4060B
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4060BEY
SOP HCF4060BM1 HCF4060M013TR
state and disable oscillator. A high level on the
RESET line accomplishes the reset function. All
counter stages are master slave flip-flops. The
state of t he counter is advanced one step in binary
order on the negative transition o f φ
inputs and outputs are fully buffered. Schmitt
trigger action on the clock pin permits unlimited
clock rise and fall t ime.
(and φ0). All
1
PIN CO NNECTION
1/10August 2003
HCF4060B
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
FUNCTIONAL DIAGRAM
PIN No SYMBOL
Q
1, 2, 3, 4,5,
6, 7, 13,14,
15
9, 10, 11
12,Q13,Q14
Q
6,Q5,Q7,Q4
Q
9,Q8,Q10
, Φ0, Φ
Φ
0
12 RESET Reset
8
16
V
SS
V
DD
NAME AND
FUNCTION
,
,
Outputs
Oscillator Input
1
Negative Supply Voltage
Positive Supply Voltage
LOGIC DIAGRAM
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HCF4060B
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
P
T
T
stg
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltagevalues arereferredto V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
T
Supply Voltage
DD
DC Input Voltage -0.5 to VDD+ 0.5
I
DC Input Current
I
I
Power Dissipation per Package 200 mW
D
-0.5 to +22 V
± 10 mA
Power Dissipation per Output Transistor 100 mW
Operating Temperature
op
Storage Temperature
pin voltage.
SS
Supply Voltage
DD
Input Voltage 0 to V
I
Operating Temperature
op
-55 to +125 °C
-65 to +150 °C
3to20 V
DD
-55 to 125 °C
V
V
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