ST HCF4030B User Manual

HCF4030B

QUAD EXCLUSIVE-OR GATE

■MEDIUM SPEED OPERATION - tPHL = tPLH = 65ns (TYP.) at CL = 50pF and VDD-VSS = 10V

■LOW OUTPUT IMPEDANCE : 500 Ω (TYP.) at VDD-VSS = 10V

■QUIESCENT CURRENT SPECIFIED UP TO 20V

■5V, 10V AND 15V PARAMETRIC RATINGS

■INPUT LEAKAGE CURRENT

II = 100nA (MAX) AT VDD = 18V TA = 25°C

■100% TESTED FOR QUIESCENT CURRENT

■MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"

DESCRIPTION

HCF4030B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

HCF4030B types consist of four indipendent exclusive-OR gates integrated on a single monolithic silicon chip. Each exclusive-OR gate consists of four n-channel and four p-channel enhancement-type transistors. All inputs and outputs are protected against electrostatic effects.

			DIP	SOP
ORDER CODES
PACKAGE			TUBE	T & R
DIP			HCF4030BEY
SOP			HCF4030BM1	HCF4030M013TR

PIN CONNECTION

September 2002

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HCF4030B

INPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

PIN No

SYMBOL

NAME AND FUNCTION

2, 1, 5, 6, 8,

A, B, C, D, E,

Data Inputs

9, 12, 13

F, G, H

3, 4, 10, 11

J, K, L, M

Data Outputs

7

VSS

Negative Supply Voltage

14

VDD

Positive Supply Voltage

TRUTH TABLE

IN1	IN2	OUT
L	L	L
L	H	H
H	L	H
H	H	L

FUNCTIONAL DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VDD	Supply Voltage	-0.5 to +22	V
VI	DC Input Voltage	-0.5 to VDD + 0.5	V
II	DC Input Current	± 10	mA
PD	Power Dissipation per Package	200	mW
	Power Dissipation per Output Transistor	100	mW
Top	Operating Temperature	-55 to +125	°C
Tstg	Storage Temperature	-65 to +150	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

All voltage values are referred to VSS pin voltage.

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																	HCF4030B
RECOMMENDED OPERATING CONDITIONS
Symbol					Parameter									Value					Unit
VDD			Supply Voltage											3 to 20					V
VI			Input Voltage											0 to VDD					V
Top			Operating Temperature											-55 to 125					°C
DC SPECIFICATIONS
					Test Condition								Value
Symbol			Parameter	VI	VO	|IO|	VDD	TA = 25°C					-40 to 85°C		-55 to 125°C				Unit
				(V)	(V)	(μA)	(V)	Min.	Typ.	Max.			Min.	Max.	Min.		Max.
IL		Quiescent Current		0/5			5		0.02		4			4			30
				0/10			10		0.02		8			8			60		μA
				0/15			15		0.02		16			16			120
				0/20			20		0.04		20			20			600
VOH		Output High		0/5		<1	5	4.95					4.95			4.95
		Voltage		0/10		<1	10	9.95					9.95			9.95			V
				0/15		<1	15	14.95					14.95			14.95
VOL		Output Low Voltage		5/0		<1	5		0.05					0.05			0.05
				10/0		<1	10		0.05					0.05			0.05		V
				15/0		<1	15		0.05					0.05			0.05
VIH		Input High Voltage			0.5/4.5	<1	5	3.5					3.5			3.5
					1/9	<1	10	7					7			7			V
					1.5/13.5	<1	15	11					11			11
VIL		Input Low Voltage			4.5/0.5	<1	5				1.5			1.5			1.5
					9/1	<1	10				3			3			3		V
					13.5/1.5	<1	15				4			4			4
IOH		Output Drive		0/5	2.5	<1	5	-1.36	-3.2				-1.15			-1.1
		Current		0/5	4.6	<1	5	-0.44	-1				-0.36			-0.36			mA
				0/10	9.5	<1	10	-1.1	-2.6				-0.9			-0.9
				0/15	13.5	<1	15	-3.0	-6.8				-2.4			-2.4
IOL		Output Sink		0/5	0.4	<1	5	0.44	1				0.36			0.36
		Current		0/10	0.5	<1	10	1.1	2.6				0.9			0.9			mA
				0/15	1.5	<1	15	3.0	6.8				2.4			2.4
II		Input Leakage		0/18	Any Input		18		±10-5		±0.1			±1			±1		μA
		Current
CI		Input Capacitance			Any Input				5		7.5								pF

The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)

Symbol	Parameter		Test Condition	Value (*)				Unit
		VDD (V)		Min.	Typ.		Max.
tPLH tPHL	Propagation Delay Time	5			140		280
		10			65		130	ns
		15			50		100
tTLH tTHL	Output Transition Time	5			100		200
		10			50		100	ns
		15			40		80

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