ST HCF4025B User Manual

HCF4025B

TRIPLE 3-INPUT NOR GATE

■PROPAGATION DELAY TIME :

tPD = 50ns (TYP.) at VDD = 10V CL = 50pF

■BUFFERED INPUTS AND OUTPUTS

■STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS

■QUIESCENT CURRENT SPECIFIED UP TO 20V

■5V, 10V AND 15V PARAMETRIC RATINGS

■INPUT LEAKAGE CURRENT

II = 100nA (MAX) AT VDD = 18V TA = 25°C

■100% TESTED FOR QUIESCENT CURRENT

■MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"

DESCRIPTION

The HCF4025B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

The HCF4025B TRIPLE 3-INPUT NOR GATE provides the system designer with direct

			DIP	SOP
ORDER CODES
PACKAGE			TUBE	T & R
DIP			HCF4025BEY
SOP			HCF4025BM1	HCF4025M013TR

implementation of the NOR function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.

PIN CONNECTION

September 2001

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HCF4025B

INPUT EQUIVALENT CIRCUIT

PIN DESCRIPTION

LOGIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

PIN No	SYMBOL	NAME AND FUNCTION
1, 2, 3, 4, 5,	A, B, D, E, F,	Data Inputs
8, 11, 12, 13	C, I, H, G
6, 9, 10	K, J, L	Data Outputs
7	VSS	Negative Supply Voltage
14	VDD	Positive Supply Voltage

TRUTH TABLE

	INPUTS		OUTPUTS
A, D, I	B, E, H	C, F, G	K, J, L
L	L	L	H
L	H	H	L
H	L	L	L
H	H	H	L

X = Don’t care

Symbol	Parameter	Value	Unit
VDD	Supply Voltage	-0.5 to +22	V
VI	DC Input Voltage	-0.5 to VDD + 0.5	V
II	DC Input Current	± 10	mA
PD	Power Dissipation per Package	200	mW
	Power Dissipation per Output Transistor	100	mW
Top	Operating Temperature	-55 to +125	°C
Tstg	Storage Temperature	-65 to +150	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

All voltage values are referred to VSS pin voltage.

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter	Value	Unit
VDD	Supply Voltage	3 to 20	V
VI	Input Voltage	0 to VDD	V
Top	Operating Temperature	-55 to 125	°C

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HCF4025B

DC SPECIFICATIONS

			Test Condition							Value
Symbol	Parameter	VI	VO	|IO|	VDD	TA = 25°C				-40 to 85°C		-55 to 125°C		Unit
		(V)	(V)	(μA)	(V)	Min.	Typ.	Max.		Min.	Max.	Min.	Max.
IL	Quiescent Current	0/5			5		0.01		0.25		7.5		7.5
		0/10			10		0.01		0.5		15		15	μA
		0/15			15		0.01		1		30		30
		0/20			20		0.02		5		150		150
VOH	High Level Output	0/5		<1	5	4.95				4.95		4.95
	Voltage	0/10		<1	10	9.95				9.95		9.95		V
		0/15		<1	15	14.95				14.95		14.95
VOL	Low Level Output	5/0		<1	5		0.05				0.05		0.05
	Voltage	10/0		<1	10		0.05				0.05		0.05	V
		15/0		<1	15		0.05				0.05		0.05
VIH	High Level Input		0.5/4.5	<1	5	3.5				3.5		3.5
	Voltage		1/9	<1	10	7				7		7		V
			1.5/13.5	<1	15	11				11		11
VIL	Low Level Input		4.5/0.5	<1	5				1.5		1.5		1.5
	Voltage		9/1	<1	10				3		3		3	V
			13.5/1.5	<1	15				4		4		4
IOH	Output Drive	0/5	2.5	<1	5	-1.36	-3.2			-1.15		-1.1
	Current	0/5	4.6	<1	5	-0.44	-1			-0.36		-0.36		mA
		0/10	9.5	<1	10	-1.1	-2.6			-0.9		-0.9
		0/15	13.5	<1	15	-3.0	-6.8			-2.4		-2.4
IOL	Output Sink	0/5	0.4	<1	5	0.44	1			0.36		0.36
	Current	0/10	0.5	<1	10	1.1	2.6			0.9		0.9		mA
		0/15	1.5	<1	15	3.0	6.8			2.4		2.4
II	Input Leakage	0/18	Any Input		18		±10-5		±0.1		±1		±1	μA
	Current
CI	Input Capacitance		Any Input				5		7.5					pF

The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)

Symbol	Parameter		Test Condition	Value (*)				Unit
		VDD (V)		Min.	Typ.		Max.
tTLH tTHL	Output Transition Time	5			125		250
		10			60		120	ns
		15			45		90
tPLH tPHL	Propagation Delay Time	5			100		200
		10			50		100	ns
		15			40		80

(*) Typical temperature coefficent for all VDD value is 0.3 %/°C.

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