ST HCF4011B User Manual

HCF4011B

QUAD 2 INPUT NAND GATE

■PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V

■BUFFERED INPUTS AND OUTPUTS

■STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS

■QUIESCENT CURRENT SPECIFIED UP TO 20V

■5V, 10V AND 15V PARAMETRIC RATINGS

■INPUT LEAKAGE CURRENT

II = 100nA (MAX) AT VDD = 18V TA = 25°C

■100% TESTED FOR QUIESCENT CURRENT

■MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES"

DESCRIPTION

The HCF4011B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages.

The HCF4011B QUAD 2 INPUT NAND GATE provides the system designer with direct

			DIP	SOP
ORDER CODES
PACKAGE			TUBE	T & R
DIP			HCF4011BEY
SOP			HCF4011BM1	HCF4011M013TR

implementation of the NAND function and supplement the existing family of CMOS gates. All inputs and outputs are buffered.

PIN CONNECTION

September 2001

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HCF4011B

INPUT EQUIVALENT CIRCUIT

LOGIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

PIN DESCRIPTION

PIN No	SYMBOL	NAME AND FUNCTION
1, 2, 5, 6, 8,	A, B, C, D, E,	Data Inputs
9, 12, 13	F, G, H
3, 4, 10, 11	J, K, L, M	Data Outputs
7	VSS	Negative Supply Voltage
14	VDD	Positive Supply Voltage

TRUTH TABLE

INPUTS			OUTPUTS
A, C, E, G		B, D, F, H	J, K, L, M
L		L	H
L		H	H
H		L	H
H		H	L

Symbol	Parameter	Value	Unit
VDD	Supply Voltage	-0.5 to +22	V
VI	DC Input Voltage	-0.5 to VDD + 0.5	V
II	DC Input Current	± 10	mA
PD	Power Dissipation per Package	200	mW
	Power Dissipation per Output Transistor	100	mW
Top	Operating Temperature	-55 to +125	°C
Tstg	Storage Temperature	-65 to +150	°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

All voltage values are referred to VSS pin voltage.

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter	Value	Unit
VDD	Supply Voltage	3 to 20	V
VI	Input Voltage	0 to VDD	V
Top	Operating Temperature	-55 to 125	°C

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HCF4011B

DC SPECIFICATIONS

			Test Condition							Value
Symbol	Parameter	VI	VO	|IO|	VDD	TA = 25°C				-40 to 85°C		-55 to 125°C		Unit
		(V)	(V)	(μA)	(V)	Min.	Typ.	Max.		Min.	Max.	Min.	Max.
IL	Quiescent Current	0/5			5		0.01		0.25		7.5		7.5
		0/10			10		0.01		0.5		15		15	μA
		0/15			15		0.01		1		30		30
		0/20			20		0.02		5		150		150
VOH	High Level Output	0/5		<1	5	4.95				4.95		4.95
	Voltage	0/10		<1	10	9.95				9.95		9.95		V
		0/15		<1	15	14.95				14.95		14.95
VOL	Low Level Output	5/0		<1	5		0.05				0.05		0.05
	Voltage	10/0		<1	10		0.05				0.05		0.05	V
		15/0		<1	15		0.05				0.05		0.05
VIH	High Level Input		0.5/4.5	<1	5	3.5				3.5		3.5
	Voltage		1/9	<1	10	7				7		7		V
			1.5/13.5	<1	15	11				11		11
VIL	Low Level Input		4.5/0.5	<1	5				1.5		1.5		1.5
	Voltage		9/1	<1	10				3		3		3	V
			13.5/1.5	<1	15				4		4		4
IOH	Output Drive	0/5	2.5	<1	5	-1.36	-3.2			-1.15		-1.1
	Current	0/5	4.6	<1	5	-0.44	-1			-0.36		-0.36		mA
		0/10	9.5	<1	10	-1.1	-2.6			-0.9		-0.9
		0/15	13.5	<1	15	-3.0	-6.8			-2.4		-2.4
IOL	Output Sink	0/5	0.4	<1	5	0.44	1			0.36		0.36
	Current	0/10	0.5	<1	10	1.1	2.6			0.9		0.9		mA
		0/15	1.5	<1	15	3.0	6.8			2.4		2.4
II	Input Leakage	0/18	Any Input		18		±10-5		±0.1		±1		±1	μA
	Current
CI	Input Capacitance		Any Input				5		7.5					pF

The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, C L = 50pF, RL = 200KΩ, tr = tf = 20 ns)

Symbol	Parameter		Test Condition	Value (*)				Unit
		VDD (V)		Min.	Typ.		Max.
tPLH tPHL	Propagation Delay Time	5			125		250
		10			60		120	ns
		15			45		90
tTLH tTHL	Output Transition Time	5			100		200
		10			50		100	ns
		15			40		80

(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.

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