ST HCF4009UB User Manual
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HCF4009UB
HEX BUFFER/CONVERTER (INVERTING)
■ PROPAGATION DELAY TIME t
(TYP.) at V
■ HIGH TO LOW LEVEL LOGIC CONVERSION
■ MULTIPLEXER: 1 TO 6 OR 6 TO 1
■ HIGH "SINK" AND "SOURCE" CURRENT
= 10V CL = 50pF
DD
= 40ns
PD
CAPABILITY
■ QUIESCENT CURRENT SPECIFIED UP TO
20V
■ 5V, 10V AND 15V PARAMETRIC RAT INGS
■ INPUT LEAKAGE CURRENT
= 100nA (MAX) AT VDD = 18V TA = 25°C
I
I
■ 100% TESTED FOR QUIESCENT CURRENT
■ MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DESCRIPTION
The HCF4009UB is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
techn ology available i n DIP and SOP packages.
DIP SOP
ORDER CODES
PACKAGE TUBE T & R
DIP HCF4009UBEY
SOP HCF4009UBM1 HCF4009UM013 TR
It is an inverting Hex Buffer/Converter and can be
used as CMOS to TTL or DTL logic level
conve rters as cur rent "sin k" ot " sou rce" driver s or
as multiplexer ( 1 to 6).
It is a preferred replacement of HCF4049UB in
buffer applications.
PIN CONNECTION
1/8July 2002
HCF4009UB
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
3, 5, 7, 9, 11, 14A, B, C, D, E,
2, 4, 6, 10,
12, 15
G, H, I, J, K,
13 NC Not Connected
1
8
16
V
V
V
TRUTH TABLE
INPUTS OUTPUTS
A, B, C, D,E, F G, H, I, J, K, L
LH
HL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
Supply Voltage
DD
V
Supply Voltage 0.5 to VDD + 0.5
CC
V
DC Input Voltage -0.5 to VDD + 0.5
I
I
DC Input Current
I
Power Dissipation per Package 200 mW
P
D
Power Dissipation per Output Transistor 100 mW
T
Operating Temperature
op
Storage Temperature
T
stg
Absolute Maximum Ratings are those value s beyond which damag e to the dev ice may occu r. Func tional operatio n under these c onditions is
not implied.
All voltage values are referred to VSS pin voltage.
Data Inputs
F
Data Outputs
L
Positive Supply Voltage
CC
Negative Supply Voltage
SS
Positive Supply Voltage
DD
-0.5 to +22 V
10 mA
±
-55 to +125 °C
-65 to +150 °C
V
V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
Supply Voltage
DD
V
Supply Voltage 0 to V
CC
V
Input Voltage 0 to V
I
T
Operating Temperature
op
This device has High to Low level voltage conversion capability only
2/8
3 to 20 V
DD
DD
-55 to 125 °C
V
V
DC SPECIFICATION
Test Condition Value
T
Symbol Parameter
I
Quiescent Current 0/5 5 0.02 1 30 30
L
V
(V)
V
I
(V)
|
V
|I
O
O
DD
(µA)
(V)
0/10 10 0.02 2 60 60
0/15 15 0.02 4 120 120
0/20 20 0.04 20 600 600
V
High Level Output
OH
Voltage
0/5 <1 5 4.95 4.95 4.95
0/15 <1 15 14.95 14.95 14.95
V
Low Level Output
OL
Voltage
5/0 <1 5 0.05 0.05 0.05
15/0 <1 15 0.05 0.05 0.05
V
High Level Input
IH
Voltage
0.5/4.5 <1 5 4 4 4
1.5/13.5 <1 15 12.5 12.5 12.5
V
Low Level Input
IL
Voltage
4.5/0.5 <1 5 1 1 1
13.5/1.5 <1 15 2.5 2.5 2.5
I
OH
Output Drive
Current
0/5 2.5 <1 5 -0.8 -1.6 -0.65 -0.65
0/5 4.6 <1 5 -0.2 -0.4 -0.18 -0.18
0/10 9.5 <1 10 -0.45 -0.9 -0.38 -0.38
0/15 13.5 <1 15 -1.5 -3 -1.25 -1.25
I
OL
Output Sink
Current
0/5 0.4 <1 5 3 4 0.36 0.36
0/15 1.5 <1 15 24 36 1.9 1.9
I
Input Leakage
I
Current
C
Input Capacitance
I
The Noise Margin for both "1" and "0" level is: 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V
0/18 Any Input 18
Any Input 15 22.6 pF
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
-5
0.1
±
10
±
1
±
HCF4009UB
Unit
A
µ
V0/10 <1 10 9.95 9.95 9.95
V10/0 <1 10 0.05 0.05 0.05
V1/9 <1 10 8 8 8
V9/1<110 222
mA
mA0/10 0.5 <1 10 8 10 6.4 6.4
A
±1µ
3/8
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