ST EMIF10-LCD02F3 User Manual
EMIF10-LCD02F3
10-line IPAD™, EMI filter and ESD protection for LCD and cameras
Features
■ Lead-free package
■ EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering
■ 400 µm pitch
■ Compatible with high speed data rate
■ Very low PCB space occupation: < 4 mm
Very thin package: 0.60 mm
■
■ High efficiency in ESD suppression
■ High reliability offered by monolithic integration
■ High reduction of parasitic elements through
2
integration and wafer level packaging
Complies with the following standards
■ IEC 61000-4-2 level 4 on inputs and outputs
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ MIL STD 883G - Method 3015-6 Class 3
Applications
Figure 1. Pin layout (bump side)
Lead-free Flip-Chip package
(24 bumps)
4
O2
O4
O6
O8
O10
3
GND
GND
GND
GND
12
I1
I2
I4
I3
I6
I5
I7
I8
I9
I10
5
O1
O3
O5
O7
O9
A
B
C
D
E
Where EMI filtering in ESD sensitive equipment is
required:
■ LCD for mobile phones
■ Computers and printers
■ Communication systems
■ MCU boards
Description
Figure 2. Device configuration
Low-pass Filter
Input
GND GND GND
Output
Ri/o = 70
Ω
Cline = 30pF
The EMIF10-LCD02F3 is a 10-line highly
integrated device designed to suppress EMI/RFI
noise in all systems subjected to electromagnetic
interference. The EMIF10 Flip-Chip packaging
means the package size is equal to the die size.
This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up 15 kV.
November 2009 Doc ID 11507 Rev 3 1/8
TM: IPAD is a trademark of STMicroelectronics.
www.st.com
8
Characteristics EMIF10-LCD02F3
1 Characteristics
Table 1. Absolute maximum ratings (T
Symbol Parameter and test conditions Value Unit
Maximum junction temperature 125 °C
T
j
T
Operating temperature range -40 to +85 °C
op
amb
= 25 °C)
T
Storage temperature range -55 to 150 °C
stg
Figure 3. Electrical characteristics (definitions)
Symbol Parameter
V = Breakdown voltage
BR
V = Clamping voltage
CL
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
I = Peak pulse current
PP
I = Breakdown current
R
I = Forward current
PP
R = Series resistanc between input and output
I/O
C = Input capacitance per line
line
Table 2. Electrical characteristics (T
amb
= 25 °C)
V
CL
V
V
BR
Symbol Test conditions Min. Typ. Max. Unit
V
BRIR
I
RM
R
C
line
= 1 mA 6 8 10 V
VRM = 3 V 50 200 nA
Tolerance ± 20% 70 Ω
2
Vline = 0 V, V
= 30 mV, F =1 MHz 30 pF
OSC
I
PP
I
I
R
I
RM
RM
I
RM
I
R
I
PP
V
CL
VBRV
RM
V
2/8 Doc ID 11507 Rev 3
EMIF10-LCD02F3 Characteristics
Figure 4. S21 all lines attenuation
measurement
Figure 6. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
and on one output
Input
10V/d
Figure 5. Analog cross talk measurement
0.00
0.00
0.00
dB
dB
dB
-10.00
-10.00
-10.00
-20.00
-20.00
-20.00
-30.00
-30.00
-30.00
-40.00
-40.00
-40.00
-50.00
-50.00
-50.00
-60.00
-60.00
-60.00
-70.00
-70.00
-70.00
-80.00
-80.00
-80.00
-90.00
-90.00
-90.00
-100.00
-100.00
-100.00
100.0k 1.0M 10.0M 100.0M 1.0G
100.0k 1.0M 10.0M 100.0M 1.0G
100.0k 1.0M 10.0M 100.0M 1.0G
f/Hz
f/Hz
f/Hz
Xtalk 1/2
Xtalk 1/2
Xtalk 1/2
Figure 7. ESD response to IEC 61000-4-2
(-15 kV air discharge) on one input
and on one output
Input
10V/d
Output
10V/d
100ns/d
Figure 8. Line capacitance versus applied voltage
C (pF)
line
30
25
20
15
10
5
0
0123456
V (V)
line
Output
10V/d
100ns/d
Doc ID 11507 Rev 3 3/8
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