ST EMIF10-LCD02F3 User Manual

EMIF10-LCD02F3

10-line IPAD™, EMI filter and ESD protection for LCD and cameras

Features

■ Lead-free package

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ 400 µm pitch

■ Compatible with high speed data rate

■ Very low PCB space occupation: < 4 mm

Very thin package: 0.60 mm

■

■ High efficiency in ESD suppression

■ High reliability offered by monolithic integration

■ High reduction of parasitic elements through

2

integration and wafer level packaging

Complies with the following standards

■ IEC 61000-4-2 level 4 on inputs and outputs

– 15 kV (air discharge)
– 8 kV (contact discharge)

■ MIL STD 883G - Method 3015-6 Class 3

Applications

Figure 1. Pin layout (bump side)

Lead-free Flip-Chip package

(24 bumps)

4

O2

O4

O6

O8

O10

3

GND

GND

GND

GND

12

I1

I2

I4

I3

I6

I5

I7

I8

I9

I10

5

O1

O3

O5

O7

O9

A

B

C

D

E

Where EMI filtering in ESD sensitive equipment is
required:

■ LCD for mobile phones

■ Computers and printers

■ Communication systems

■ MCU boards

Description

Figure 2. Device configuration

Low-pass Filter

Input

GND GND GND

Output

Ri/o = 70

Ω

Cline = 30pF

The EMIF10-LCD02F3 is a 10-line highly
integrated device designed to suppress EMI/RFI
noise in all systems subjected to electromagnetic
interference. The EMIF10 Flip-Chip packaging
means the package size is equal to the die size.

This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up 15 kV.

November 2009 Doc ID 11507 Rev 3 1/8

TM: IPAD is a trademark of STMicroelectronics.

www.st.com

8

Characteristics EMIF10-LCD02F3

1 Characteristics

Table 1. Absolute maximum ratings (T

Symbol Parameter and test conditions Value Unit

Maximum junction temperature 125 °C

T

j

T

Operating temperature range -40 to +85 °C

op

amb

= 25 °C)

T

Storage temperature range -55 to 150 °C

stg

Figure 3. Electrical characteristics (definitions)

Symbol Parameter

V = Breakdown voltage

BR

V = Clamping voltage

CL

I = Leakage current @ V

RM RM

V = Stand-off voltage

RM

I = Peak pulse current

PP

I = Breakdown current

R

I = Forward current

PP

R = Series resistanc between input and output

I/O

C = Input capacitance per line

line

Table 2. Electrical characteristics (T

amb

= 25 °C)

V

CL

V

V

BR

Symbol Test conditions Min. Typ. Max. Unit

V

BRIR

I

RM

R

C

line

= 1 mA 6 8 10 V

VRM = 3 V 50 200 nA

Tolerance ± 20% 70 Ω

2

Vline = 0 V, V

= 30 mV, F =1 MHz 30 pF

OSC

I

PP

I

I

R

I

RM

RM

I

RM

I

R

I

PP

V

CL

VBRV

RM

V

2/8 Doc ID 11507 Rev 3

EMIF10-LCD02F3 Characteristics

Figure 4. S21 all lines attenuation

measurement

Figure 6. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one input
and on one output

Input
10V/d

Figure 5. Analog cross talk measurement

0.00

0.00

0.00
dB

dB

dB

-10.00

-10.00

-10.00

-20.00

-20.00

-20.00

-30.00

-30.00

-30.00

-40.00

-40.00

-40.00

-50.00

-50.00

-50.00

-60.00

-60.00

-60.00

-70.00

-70.00

-70.00

-80.00

-80.00

-80.00

-90.00

-90.00

-90.00

-100.00

-100.00

-100.00

100.0k 1.0M 10.0M 100.0M 1.0G

100.0k 1.0M 10.0M 100.0M 1.0G

100.0k 1.0M 10.0M 100.0M 1.0G
f/Hz

f/Hz

f/Hz

Xtalk 1/2

Xtalk 1/2

Xtalk 1/2

Figure 7. ESD response to IEC 61000-4-2

(-15 kV air discharge) on one input
and on one output

Input
10V/d

Output
10V/d

100ns/d

Figure 8. Line capacitance versus applied voltage

C (pF)

line

30

25

20

15

10

5

0

0123456

V (V)

line

Output
10V/d

100ns/d

Doc ID 11507 Rev 3 3/8