ST EMIF10-LCD02F3 User Manual
EMIF10-LCD02F3
10-line IPAD™, EMI filter and ESD protection for LCD and cameras
Features
■Lead-free package
■EMI symmetrical (I/O) low-pass filter
■High efficiency in EMI filtering
■400 µm pitch
■Compatible with high speed data rate
■Very low PCB space occupation: < 4 mm2
■Very thin package: 0.60 mm
■High efficiency in ESD suppression
■High reliability offered by monolithic integration
■High reduction of parasitic elements through integration and wafer level packaging
Complies with the following standards
■IEC 61000-4-2 level 4 on inputs and outputs
–15 kV (air discharge)
–8 kV (contact discharge)
■MIL STD 883G - Method 3015-6 Class 3
Applications
Where EMI filtering in ESD sensitive equipment is required:
■LCD for mobile phones
■Computers and printers
■Communication systems
■MCU boards
Description
The EMIF10-LCD02F3 is a 10-line highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The EMIF10 Flip-Chip packaging means the package size is equal to the die size.
This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 15 kV.
Lead-free Flip-Chip package (24 bumps)
Figure 1. Pin layout (bump side)
5 |
4 |
3 |
2 |
1 |
|
O1 |
O2 |
GND |
I1 |
I2 |
A |
O3 |
O4 |
|
I3 |
I4 |
B |
O5 |
O6 |
GND |
I5 |
I6 |
C |
O7 |
O8 |
GND |
I7 |
I8 |
D |
O9 |
O10 |
GND |
I9 |
I10 |
E |
Figure 2. Device configuration
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Low-pass Filter |
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Input |
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Output |
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Ri/o = 70Ω |
GND |
GND |
GND |
Cline = 30pF |
TM: IPAD is a trademark of STMicroelectronics.
November 2009 |
Doc ID 11507 Rev 3 |
1/8 |
www.st.com
Characteristics |
EMIF10-LCD02F3 |
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1 Characteristics
Table 1. |
Absolute maximum ratings (Tamb = 25 °C) |
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Symbol |
Parameter and test conditions |
Value |
Unit |
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Tj |
Maximum junction temperature |
125 |
°C |
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Top |
Operating temperature range |
-40 to +85 |
°C |
Tstg |
Storage temperature range |
-55 to 150 |
°C |
Figure 3. Electrical characteristics (definitions)
Symbol |
|
Parameter |
VBR |
= |
Breakdown voltage |
VCL |
= |
Clamping voltage |
IRM |
= |
Leakage current @ VRM |
VRM |
= |
Stand-off voltage |
IPP |
= |
Peak pulse current |
IR |
= |
Breakdown current |
IPP |
= |
Forward current |
RI/O |
= |
Series resistanc between input and output |
Cline |
= |
Input capacitance per line |
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|
I |
|
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|
IPP |
|
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|
IR |
|
VCL VBR |
VRM |
IRM |
V |
|
|
IRM |
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VRM VBR VCL |
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IR |
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IPP |
|
Table 2. |
Electrical characteristics (Tamb = 25 °C) |
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Symbol |
Test conditions |
Min. |
Typ. |
Max. |
Unit |
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VBR |
IR = 1 mA |
6 |
8 |
10 |
V |
IRM |
VRM = 3 V |
|
50 |
200 |
nA |
R2 |
Tolerance ± 20% |
|
70 |
|
Ω |
Cline |
Vline = 0 V, VOSC = 30 mV, F =1 MHz |
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|
30 |
pF |
2/8 |
Doc ID 11507 Rev 3 |
EMIF10-LCD02F3 |
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Characteristics |
Figure 4. S21 all lines attenuation |
Figure 5. |
Analog cross talk measurement |
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measurement |
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0.00 |
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dB |
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-10.00 |
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-20.00 |
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-30.00 |
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-40.00 |
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-50.00 |
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-60.00 |
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-70.00 |
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-80.00 |
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-90.00 |
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-100.00 |
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100.0k |
1.0M |
10.0M |
100.0M |
1.0G |
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f/Hz |
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Xtalk 1/2 |
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Figure 6. ESD response to IEC 61000-4-2 |
Figure 7. |
ESD response to IEC 61000-4-2 |
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(+15 kV air discharge) on one input |
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(-15 kV air discharge) on one input |
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and on one output |
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and on one output |
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Input |
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Input |
10V/d |
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10V/d |
Output |
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Output |
10V/d |
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10V/d |
100ns/d |
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100ns/d |
Figure 8. Line capacitance versus applied voltage
Cline (pF)
30
25
20
15
10
5
Vline (V)
0
0 |
1 |
2 |
3 |
4 |
5 |
6 |
Doc ID 11507 Rev 3 |
3/8 |
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