ST EMIF10-COM01C2 User Manual

EMIF10-COM01C2

IPAD™

EMI Filter including ESD protection

Main product characteristics

EMI filtering and ESD protection for:

■Computers and printers

■Communication systems

■Mobile phones

Description

The EMIF10-COM01C2 is a highly integrated device designed to suppress EMI / RFI noise in all systems subjected to electromagnetic interferences. The EMIF10 Flip-Chip packaging means the package size is equal to the die size.

Additionally, this filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15 kV.

Benefits

■EMI symmetrical (I/O) low-pass filter

■Coating resin on flat side

■Very low PCB space consuming: < 6 mm2

■Very thin package: 0.65 mm

■High efficiency in ESD suppression on both input and output pins

■High reliability offered by monolithic integration

■Lead free package

Complies with the following standards:

IEC 61000-4-2 level 4

15 kV (air discharge)

8 kV (contact discharge)

TM: IPAD is a trademark of STMicroelctronics

Lead free coated Flip-Chip (25 Bumps)

Order code

Part Number	Marking
EMIF10-COM01C2	FE

Figure 1. Pin configuration (Bump side)

5	4	3	2	1
I5	I4	I3	I2	I1	A
I10	I9	I8	I7	I6	B
GND	GND	GND	GND	GND	C
010	09	08	07	06	D
05	04	03	02	01	E

Figure 2. Basic cell configuration

Low-pass Filter

Input

Output

RI/O = 200Ω

Cline = 45 pF

April 2006

Rev4

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www.st.com

Characteristics	EMIF10-COM01C2

1 Characteristics

Table 1.		Absolute Ratings (Tamb = 25 °C)
Symbol		Parameter and test conditions						Value			Unit
VPP		ESD discharge IEC61000-4-2, air discharge					15				kV
		ESD discharge IEC61000-4-2, contact discharge					8
Tj		Junction temperature					125				°C
Top		Operating temperature range					- 40 to + 85				°C
Tstg		Storage temperature range					- 55 to + 150				°C
Table 2.		Electrical Characteristics (Tamb = 25 °C)
Symbol		Parameter						I
VBR	Breakdown voltage
IRM	Leakage current @ VRM
VRM	Stand-off voltage
				VCL VBR VRM
VCL	Clamping voltage							IRM			V
Rd	Dynamic impedance
								IR
IPP	Peak pulse current
RI/O	Resistance between Input and Output				slope :1 / R d			IPP
Cline	Input capacitance per line
Symbol		Test conditions				Min.		Typ.		Max.	Unit
VBR		IR = 1 mA				6		8		10	V
IRM		VRM = 3 V per line								500	nA
Rd		IPP = 10 A, tp = 2.5 µs						1			Ω
RI/O						180		200		220	Ω
Cline		At 0 V bias						45		50	pF
tLH		Vinput = 2.8 V Rload = 100 kΩ								25	ns

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EMIF10-COM01C2	Characteristics
Figure 3. S21(db) attenuation	Figure 4. Analog crosstalk
measurement(1)

0.00 dB -10.00

-20.00

-30.00

-40.00

-50.00

100.0k 1.0M 10.0M 100.0M 1.0G f/Hz

0.00 dB -10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

-100.00

100.0k	1.0M	10.0M	100.0M	1.0G
			f/Hz
	Xtalk 1/2 448		Xtalk 1/2 342

1. Spikes at high frequencies are induced by the PCB layout

Figure 5.	ESD response to IEC 61000-4-2	Figure 6.	ESD response to IEC 61000-4-2
	(+15 kV air discharge) on one input		(-15 kV air discharge) on one input
	(Vin) and on one output (Vout)		(Vin) and on one output (Vout)
			V(in1)
	V(in1)
	V(out1)		V(out1)
Figure 7.	Rise time measurement

Square signal Generator Vc = 2.8V

EMIF10-COM01C2
In	Out

								Vout
Vin						100k		Vout

Vin

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