ST EMIF10-1K010F2 User Manual

10-line IPAD™, EMI filter including ESD protection

Features

■ EMI symmetrical (I/O) low-pass filter

■ High efficiency in EMI filtering

■ Lead free package

■ Very low PCB space consuming:

2.42 mm x 2.42 mm

■ Very thin package: 0.650 mm

■ High efficiency in ESD suppression on both

input and output pins (IEC 61000-4-2 level 4)

■ High reliability offered by monolithic integration

■ High reducing of parasitic elements through

integration & wafer level packaging

Complies with the following standards:

■ IEC 61000-4-2 level 4

– 15 kV (air discharge)
– 8 kV (contact discharge)

■ MIL STD 883F - Method 3015.7 Class 3

Applications

Where EMI filtering in ESD sensitive equipment is
required:

■ Mobile Phones

■ Computers and printers

■ Communication systems

■ MCU Boards

Description

EMIF10-1K010F2

Flip Chip

(24 bumps)

Figure 1. Pin configuration (bump side)

5

I7

I9

I10 I8 I6

09 07 05 03 01

010 08 06 04 02

Figure 2. Basic cell configuration

Input

3

4

GND GND

GND GND

Low pass filter

I3

I5

I4 I2

12

A

I1

B

C

D

E

Output

The EMIF10-1K010F2 is a highly integrated
device designed to suppress EMI / RFI noise in all
systems subjected to electromagnetic

R = 1 k

C = 100 pF

line

Ω

I/O

interferences. The EMIF10 Flip-Chip packaging
means the package size is equal to the die size.

Additionally, this filter includes an ESD protection
circuitry which prevents damage to the application
when subjected to ESD surges up to 15 kV.

TM: IPAD is a trademark of STMicroelectronics.

April 2008 Rev 4 1/8

www.st.com

8

Characteristics EMIF10-1K010F2

1 Characteristics

Table 1. Absolute ratings (T

Symbol Parameter and test conditions Value Unit

ESD discharge IEC 61000-4-2

V

T

T

Table 2. Electrical characteristics (T

Symbol Parameter

V

BR

I

RM

V

RM

V

CL

R

I

PP

R

I/O

C

line

– Air discharge

PP

– Contact discharge

MIL STD 883F - Method 3015.7 Class 3

Junction temperature 125 °C

T

j

Operating temperature range - 40 to + 85 °C

op

Storage temperature range - 55 to + 150 °C

stg

Breakdown voltage

Leakage current @ V

RM

Stand-off voltage

Clamping voltage

Dynamic impedance

d

Peak pulse current

Resistance between Input and Output

Input capacitance per line

= 25 °C)

amb

= 25 °C)

amb

15

8

kV

25

I

I

F

V

BR

V

V

RM

CL

V

F

I

RM

I

R

I

PP

V

Symbol Test conditions Min. Typ. Max. Unit

V

BRIR

I

RM

R

R

I/O

C

line

= 1 mA 6 8 10 V

VRM = 3 V per line 200 nA

IPP = 10 A, tp = 2.5 µs 1 Ω

d

F = 1 MHz V

= 30 mV V

OSC

= 0 V 80 100 120 pF

line

2/8

900 1000 1100 Ω

EMIF10-1K010F2 Characteristics

Figure 3. S21(db) attenuation measurement Figure 4. Analog cross talk measurements

0.00

dB

- 10.00

- 20.00

- 30.00

- 40.00

- 50.00

Figure 5. ESD response to IEC 61000-4-2

1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz

(+15 kV air discharge) on one input

) and on one output (V

(V

in

out

INPUT

)

Figure 6. ESD response to IEC 61000-4-2

(-15 kV air discharge) on one input
(Vin) and on one output (V

out

INPUT

)

OUTPUT

Figure 7. Capacitance versus reverse applied voltage

C (pF)

120

100

80

60

40

20

0

0.0 1.0 2.0 3.0 4.0 5.0

V(V)

R

OUTPUT

Input / GND

3/8