ST EMIF10-1K010F2 User Manual
EMIF10-1K010F2
10-line IPAD™, EMI filter including ESD protection
Features
■EMI symmetrical (I/O) low-pass filter
■High efficiency in EMI filtering
■Lead free package
■Very low PCB space consuming: 2.42 mm x 2.42 mm
■Very thin package: 0.650 mm
■High efficiency in ESD suppression on both input and output pins (IEC 61000-4-2 level 4)
■High reliability offered by monolithic integration
■High reducing of parasitic elements through integration & wafer level packaging
Complies with the following standards:
■IEC 61000-4-2 level 4
–15 kV (air discharge)
–8 kV (contact discharge)
■MIL STD 883F - Method 3015.7 Class 3
Applications
Where EMI filtering in ESD sensitive equipment is required:
■Mobile Phones
■Computers and printers
■Communication systems
■MCU Boards
Description
The EMIF10-1K010F2 is a highly integrated device designed to suppress EMI / RFI noise in all systems subjected to electromagnetic interferences. The EMIF10 Flip-Chip packaging means the package size is equal to the die size.
Additionally, this filter includes an ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15 kV.
Flip Chip (24 bumps)
Figure 1. Pin configuration (bump side)
5 |
4 |
3 |
2 |
1 |
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I7 |
GND |
GND |
I3 |
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A |
I9 |
GND |
GND |
I5 |
I1 |
B |
I10 |
I8 |
I6 |
I4 |
I2 |
C |
09 |
07 |
05 |
03 |
01 |
D |
010 |
08 |
06 |
04 |
02 |
E |
Figure 2. Basic cell configuration
Low pass filter
Input 
Output
RI/O = 1 kΩ
Cline = 100 pF
TM: IPAD is a trademark of STMicroelectronics.
April 2008 |
Rev 4 |
1/8 |
www.st.com
Characteristics |
EMIF10-1K010F2 |
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1 Characteristics
Table 1. |
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Absolute ratings (Tamb = 25 °C) |
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Parameter and test conditions |
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Value |
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Unit |
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ESD discharge IEC 61000-4-2 |
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VPP |
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– Air discharge |
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15 |
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kV |
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– Contact discharge |
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8 |
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MIL STD 883F - Method 3015.7 Class 3 |
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25 |
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Tj |
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Junction temperature |
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125 |
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°C |
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Top |
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Operating temperature range |
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- 40 to + 85 |
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°C |
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Tstg |
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Storage temperature range |
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- 55 to + 150 |
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°C |
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Table 2. |
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Electrical characteristics (Tamb = 25 °C) |
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Symbol |
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Parameter |
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I |
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VBR |
Breakdown voltage |
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IF |
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IRM |
Leakage current @ VRM |
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VRM |
Stand-off voltage |
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VBR |
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VF |
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VCL |
Clamping voltage |
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VRM |
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VCL |
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V |
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IRM |
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Rd |
Dynamic impedance |
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IR |
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IPP |
Peak pulse current |
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RI/O |
Resistance between Input and Output |
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IPP |
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Cline |
Input capacitance per line |
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Symbol |
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Test conditions |
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Min. |
Typ. |
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Max. |
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Unit |
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VBR |
IR = 1 mA |
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6 |
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8 |
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10 |
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V |
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IRM |
VRM = 3 V per line |
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200 |
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nA |
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Rd |
IPP = 10 A, tp = 2.5 µs |
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1 |
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Ω |
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RI/O |
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900 |
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1000 |
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1100 |
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Ω |
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Cline |
F = 1 MHz VOSC = 30 mV Vline = 0 V |
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80 |
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100 |
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120 |
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pF |
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2/8
EMIF10-1K010F2 |
Characteristics |
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Figure 3. S21(db) attenuation measurement Figure 4. |
Analog cross talk measurements |
0.00
dB
- 10.00
- 20.00
- 30.00
- 40.00
- 50.00
1.0M |
3.0M |
10.0M |
30.0M |
100.0M |
300.0M |
1.0G |
3.0G |
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f/Hz |
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Figure 5. ESD response to IEC 61000-4-2 (+15 kV air discharge) on one input (Vin) and on one output (Vout)
Figure 6. ESD response to IEC 61000-4-2 (-15 kV air discharge) on one input (Vin) and on one output (Vout)
INPUT
INPUT
OUTPUT
OUTPUT
Figure 7. Capacitance versus reverse applied voltage
C (pF)
120
Input / GND
100 |
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80 |
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60 |
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40 |
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20 |
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VR (V) |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
0.0 |
3/8
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