ST EMIF08-VID01F2 User Manual

EMIF08-VID01F2

8 line low capacitance EMI filter and ESD protection

Main product characteristics

Where EMI filtering in ESD sensitive equipment is required :

■LCD & camera for mobile phones

■Computers and printers

■Communication systems

■MCU Boards

Description

The EMIF08-VID01F2 is an 8 line highly integrated device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The flip chip packaging means the package size is equal to the die size.

This filter includes ESD protection circuitry, which prevents damage to the application when it is subjected to ESD surges up to 15kV.

Benefits

■High efficiency EMI filter (-33 dB @ 900 Mhz)

■Low line capacitance suitable for high speed data bus

■Low serial resistance for camera impedance adaptation

■Optimized PCB space consuming: 1.29 mm x 3.92 mm

■Very thin package: 0.65 mm

■Lead free pacakge

■High efficiency in ESD suppression on inputs pins (IEC61000-4-2 level 4).

■High reliability offered by monolithic integration

■High reducing of parasitic elements through integration & wafer level packaging.

Lead free flip chip package

Pin configuration (Bumps side)

12 11 10		9 8 7		6 5 4		3 2 1
I8	I7	I6	I5	I4	I3	I2	I1	A
	GND		GND		GND		GND	B
O8	O7	O6	O5	O4	O3	O2	O1	C

Complies with following standards:

IEC61000-4-2
level 4 input pins	15 kV	(air discharge)
	8 kV	(contact discharge
level 1 output pins	2 kV	(air discharge)
	2 kV	(contact discharge

MIL STD 883E - Method 3015-6 Class 3

	Rev 2
August 2005	1/6
	www.st.com

1 Electrical characteristics (Tamb = 25°C)

EMIF08-VID01F2

Figure 1. Basic cell configuration

Input Output

R

R = 100 Ω

Cline = 16 pF typ. @ 3 V

	Table 1.	Absolute ratings (limiting values)
	Symbol	Parameter	Value	Unit
	Vpp	ESD discharge IEC61000-4-2 air discharge	15	kV
		ESD discharge IEC61000-4-2 contact discharge	8	KV
	Tj	Maximum junction temperature	125	°C
	Top	Operating temperature range	-40 to +85	°C
	Tstg	Storage temperature range	-55 to +150	°C

1 Electrical characteristics (Tamb = 25°C)

Symbol	Parameters	I
VBR	Breakdown voltage
IRM	Leakage current @ VRM
VRM		I		V
	Stand-off voltage	RM
		VRM	V	BR
R	Series resistance between Input &
	Output
Cline	Input capacitance per line

Symbol	Test conditions	Min	Typ	Max	Unit
VBR	IR = 1mA	6	8	10	V
IRM	VRM = 3V per line			500	nA
RI/O	I=10mA	80	100	120	Ω
Cline	VR = 3V DC, 1 MHz		16	19	pF

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