ST EMIF08-VID01F2 User Manual
EMIF08-VID01F2
8 line low capacitance EMI filter
and ESD protection
Main product characteristics
Where EMI filtering in ESD sensitive equipment is
required :
■ LCD & camera for mobile phones
■ Computers and printers
■ Communication systems
■ MCU Boards
Description
The EMIF08-VID01F2 is an 8 line highly
integrated device designed to suppress EMI/RFI
noise in all syste ms subjected to electromag netic
interference. The flip chip packaging means the
package size is equal to the die size.
This filter include s ESD pr otection ci rcuitr y, which
prevents damage to the application when it is
subjected to ESD surges up to 15kV.
Benefits
■ High efficiency EMI filter (-33 dB @ 900 Mhz)
■ Low line capacitance suitable for high speed
data bus
■ Low serial resistance for camera impedance
adaptation
■ Optimized PCB space consuming: 1.29 mm x
3.92 mm
■ Very thin package: 0.65 mm
■ Lead free pacakge
■ High efficiency in ESD suppression on inputs
pins (IEC61000-4-2 level 4).
■ High reliability offered by monolithic integration
■ High reducing of parasitic elements through
integration & wafer level packaging.
Lead free flip chip package
Pin configuration (Bumps side)
9 8 7
6 5 4 3 2 112 11 10
I8O8I7O7I6O6I5O5I4O4I3O3I2O2I1
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
Complies with following standards:
IEC61000-4-2
level 4 input pins 15 kV (air discharge)
8 kV (contact discharge
level 1 output pins 2 kV (air discharge)
2 kV (contact discharge
MIL STD 883E - Method 3015-6 Class 3
O1
A
B
C
Rev 2
August 2005 1/6
www.st.com
6
1 Electrical characteristics (T
Figure 1. Basic cell configuration
= 25°C) EMIF08-VID01F2
amb
Input
Output
RRRRRRR
R = 100
C
= 16 pF typ. @ 3V
line
Ω
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
Vpp
ESD discharge IEC61000-4-2 air discharge
ESD discharge IEC61000-4-2 contac t dis charge
Tj Maximum junction temperature 125 °C
T
op
T
stg
Operating t emperature range -40 to +85 °C
Storage temperature range -55 to +150 °C
15
8
kV
KV
1 Electrical characteristics (T
Symbol Parameters
V
BR
Breakdown voltage
I
V
C
Leakage current @ V
RM
RM
Stand-off voltage
Series resistance between Input &
R
Output
line
Input capacitance per line
RM
Symbol Test conditions Min Typ Max Unit
V
BR
I
RM
R
I/O
C
line
IR = 1mA
VRM = 3V per line
I=10mA 80 100 120 Ω
VR = 3V DC, 1 MHz
amb
= 25°C)
I
I
I
I
RM
RM
V
V
RM
RM
6810V
16 19 pF
V
V
V
V
BR
BR
500 nA
2/6
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