Where EMI filtering in ESD sensitive equipment is
required :
■ LCD & camera for mobile phones
■ Computers and printers
■ Communication systems
■ MCU Boards
Description
The EMIF08-VID01F2 is an 8 line highly
integrated device designed to suppress EMI/RFI
noise in all syste ms subjected to electromag netic
interference. The flip chip packaging means the
package size is equal to the die size.
This filter include s ESD pr otection ci rcuitr y, which
prevents damage to the application when it is
subjected to ESD surges up to 15kV.
Benefits
■ High efficiency EMI filter (-33 dB @ 900 Mhz)
■ Low line capacitance suitable for high speed
data bus
■ Low serial resistance for camera impedance
adaptation
■ Optimized PCB space consuming: 1.29 mm x
3.92 mm
■ Very thin package: 0.65 mm
■ Lead free pacakge
■ High efficiency in ESD suppression on inputs
pins (IEC61000-4-2 level 4).
■ High reliability offered by monolithic integration
■ High reducing of parasitic elements through
integration & wafer level packaging.
Lead free flip chip package
Pin configuration (Bumps side)
9 8 7
6 5 43 2 112 11 10
I8O8I7O7I6O6I5O5I4O4I3O3I2O2I1
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
Complies with following standards:
IEC61000-4-2
level 4 input pins15 kV(air discharge)
8 kV(contact discharge
level 1 output pins2 kV(air discharge)
2 kV(contact discharge
MIL STD 883E - Method 3015-6 Class 3
O1
A
B
C
Rev 2
August 20051/6
www.st.com
6
1 Electrical characteristics (T
Figure 1.Basic cell configuration
= 25°C)EMIF08-VID01F2
amb
Input
Output
RRRRRRR
R = 100
C
= 16 pF typ. @ 3V
line
Ω
Table 1.Absolute ratings (limiting values)
SymbolParameterValueUnit
Vpp
ESD discharge IEC61000-4-2 air discharge
ESD discharge IEC61000-4-2 contac t dis charge
TjMaximum junction temperature125°C
T
op
T
stg
Operating t emperature range-40 to +85°C
Storage temperature range-55 to +150°C
15
8
kV
KV
1 Electrical characteristics (T
SymbolParameters
V
BR
Breakdown voltage
I
V
C
Leakage current @ V
RM
RM
Stand-off voltage
Series resistance between Input &
R
Output
line
Input capacitance per line
RM
SymbolTest conditionsMinTypMaxUnit
V
BR
I
RM
R
I/O
C
line
IR = 1mA
VRM = 3V per line
I=10mA80100120Ω
VR = 3V DC, 1 MHz
EMIF08-VID01F2GSFlip Chip6.8 mg50007” Tape and reel
5 Revision history
DateRevisionChanges
13-Jul-20051Initial release.
11-Aug-20052Fonts changed in Figures 7, 8, and 9
5/6
5 Revision historyEMIF08-VID01F2
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