ST EMIF08-LCD04M16 User Manual

EMIF08-LCD04M16

8-line L-C IPAD™, EMI filter and ESD protection in Micro QFN

Features

■High cut off frequency low-pass filter: FC = 400 MHz at -6 dB

■High efficiency in EMI filtering:

better than -35 dB from 900 MHz to 2 GHz

■Very low PCB space consuming with plastic micro-package 3.3 x 1.35 mm

■Very thin package: 0.55 mm

■High efficiency in ESD (IEC 61000-4-2 level 4)

■High reliability offered by monolithic integration

■High reducing of parasitic elements through integration

■ECOPACK®2 compliant component

Complies with the following standards

■IEC 61000-4-2 level 4:

–15 kV (air discharge)

–8 kV (contact discharge)

Micro QFN 3.3 x 1.35 16L

Figure 1. Device configuration

	Low-pass Filter
Input	0 0 0 0
	Output

GND

GND

GND

Applications

Where EMI filtering in ESD sensitive equipment is required:

■LCDandcameraformobilephones

■Computers and printers

■Communication systems

■MCU boards

Description

The EMIF08-LCD04M16 is a 8-line inductorcapacitor (LC) EMI filter designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interferences requiring a large bandwidth.

This filter includes an ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up 15 kV contact discharge.

TM: IPAD is a trademark of STMicroelectronics.

November 2009

Doc ID 15673 Rev 2

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www.st.com

Electrical characteristics	EMIF08-LCD04M16

1 Electrical characteristics

Table 1.	Absolute maximum ratings (Tamb = 25 °C)
Symbol	Parameter	Value	Unit
VPP	ESD discharge IEC 61000-4-2, contact discharge	± 15	kV
Top	Operating temperature range	-40 to 85	°C
Tj	Maximum junction temperature	125	°C
Tstg	Storage temperature range	-55 to 150	°C

Figure 2.		Electrical characteristics (definitions)
							I
Symbol			Parameter				IF
VBR		=	Breakdown voltage
IRM		=	Leakage current @ VRM
VRM		=	Stand-off voltage
VCL		=	Clamping voltage	VCLVBR VRM					V
Rd		=	Dynamic impedance					IRM
IPP		=	Peak pulse current
								IR
IR		=	Breakdown current
αT		=	Voltage temperature coefficient
VF		=	Forward voltage drop					IPP
Table 2.		Electrical characteristics (Tamb = 25 °C)
Symbol			Test conditions		Min.		Typ.		Max.	Unit
VBR		IR = 1 mA			6		-		-	V
IRM		VRM = 3 V per line			-		-		100	nA
L		Inductance			-		12		-	nH
Cline		VR = 3 V DC, F = 1 MHz, Vosc = 30 mV			17		18		19	pF
R		Parasitic resistance of the inductance			9		12.5		20	Ω
FC		50 Ω source and 50 Ω load termination at -6 dB			-		400		-	MHz

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EMIF08-LCD04M16	Electrical characteristics
Figure 3. S21 attenuation measurements	Figure 4. Analog crosstalk measurements

0	dB
-5
-10
-15
-20
-25
-30
-35
-40	I2	-	O2 #1
-45	I3	-	O3 #1
	I4	-	O4 #1
-50
	I5	-	O5 #1
-55
	I6	-	O6 #1
-60	I7	-	O7 #1
-65	I8	-	O8 #1				F/Hz	F/Hz
-70
	100k			1M	10M	100M	1G

Figure 5. ESD response to IEC 61000-4-2				Figure 6. ESD response to IEC 61000-4-2
	(+15 kV air discharge)				(-15 kV air discharge)
	5V/Div				5V/Div
				C2	IN
	IN
C2
				C3	OUT
	OUT
C3
		2V/Div				2V/Div

Figure 7. Line capacitance versus applied voltage

C(pF)
35
30
25
20
15
10
5					VR(V)
0
0	1	2	3	4	5

Doc ID 15673 Rev 2

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