ST EMIF08-LCD04M16 User Manual
8-line L-C IPAD™, EMI filter and ESD protection in Micro QFN
Features
■ High cut off frequency low-pass filter:
F
= 400 MHz at -6 dB
C
■ High efficiency in EMI filtering:
better than -35 dB from 900 MHz to 2 GHz
■ Very low PCB space consuming with plastic
micro-package 3.3 x 1.35 mm
■ Very thin package: 0.55 mm
■ High efficiency in ESD (IEC 61000-4-2 level 4)
■ High reliability offered by monolithic integration
■ High reducing of parasitic elements through
integration
■ ECOPACK
Complies with the following standards
®
2 compliant component
EMIF08-LCD04M16
Micro QFN
3.3 x 1.35 16L
Figure 1. Device configuration
Low-pass Filter
Input
0 0 0 0
Output
■ IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
Applications
Where EMI filtering in ESD sensitive equipment is
required:
■ L C D a n d c a m e r a f o r m o b i l e p h o n e s
■ Computers and printers
■ Communi catio n systems
■ MCU boards
GND GND GND
Description
The EMIF08-LCD04M16 is a 8-line inductorcapacitor (LC) EMI filter designed to suppress
EMI/RFI noise in all systems subjected to
electromagnetic interferences requiring a large
bandwidth.
This filter includes an ESD protection circuitry,
which prevents damage to the application when
subjected to ESD surges up 15 kV contact
discharge.
TM: IPAD is a trademark of STMicroelectronics.
November 2009 Doc ID 15673 Rev 2 1/10
www.st.com
10
Electrical characteristics EMIF08-LCD04M16
1 Electrical characteristics
Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
amb
= 25 °C)
V
T
ESD discharge IEC 61000-4-2, contact discharge ± 15 kV
PP
T
Operating temperature range -40 to 85 °C
op
T
Maximum junction temperature 125 °C
j
Storage temperature range -55 to 150 °C
stg
Figure 2. Electrical characteristics (definitions)
I
I
Symbol Parameter
V = Breakdown voltage
BR
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
V = Clamping voltage
CL
R = Dynamic impedance
d
I = Peak pulse current
PP
I = Breakdown current
R
α
T = Voltage temperature coefficient
V = Forward voltage drop
F
Table 2. Electrical characteristics (T
amb
= 25 °C)
VCLVBRV
VCLVBRV
Symbol Test conditions Min. Typ. Max. Unit
RM
RM
I
I
F
F
V
V
I
I
RM
RM
I
I
R
R
I
I
PP
PP
V
BRIR
I
RM
= 1 mA 6 - - V
VRM = 3 V per line - - 100 nA
L Inductance - 12 - nH
C
VR = 3 V DC, F = 1 MHz, V
line
osc
R Parasitic resistance of the inductance 9 12.5 20 Ω
50 Ω source and 50 Ω load termination at -6 dB - 400 - MHz
F
C
2/10 Doc ID 15673 Rev 2
= 30 mV 17 18 19 pF
EMIF08-LCD04M16 Electrical characteristics
Figure 3. S21 attenuation measurements Figure 4. Analog crosstalk measurements
dB
0
-5
-10
-15
-20
-25
-30
-35
I2-O2 #1
-40
-45
-50
-55
-60
-65
-70
Figure 5. ESD response to IEC 61000-4-2
C2
-
I3 O3 #1
-
I4
O4 #1
-
I5
O5 #1
-
I6
O6 #1
-
I7
O7 #1
-
I8
O8 #1
100k 1M 10M 100M 1G
(+15 kV air discharge)
5V/Div
IN
OUT
F/Hz
F/Hz
Figure 6. ESD response to IEC 61000-4-2
(-15 kV air discharge)
5V/Div
C2
C3
IN
OUT
C3
Figure 7. Line capacitance versus applied voltage
C(pF)
35
30
25
20
15
10
5
0
012345
2V/Div
V (V)
R
2V/Div
Doc ID 15673 Rev 2 3/10
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