ST EMIF08-1502M16 User Manual

low capacitance EMI filter and ESD protection in micro QFN package
Features
EMIF08-1502M16
8-line IPAD™
EMI (I/O) low-pass filter
High efficiency in EMI filtering:
– Greater than 30 dB attenuation at
Cut-off frequency: 300 MHz
Very low PCB space consumption:
3.3 mm x 1.5 mm
Very thin package: 0.6 mm max.
High efficiency in ESD suppression on inputs
pins (IEC 61000-4-2 level 4)
High reliability offered by monolithic integration
High reduction of parasitic elements through
integration
Lead-free package
Complies with following standards:
IEC 61000-4-2 level 4 input pins
– 15 kV (air discharge) – 8 kV (contact discharge)
MIL STD 883G - Method 3015-7 Class 3A
(all pins)
Applications
Where EMI filtering in ESD sensitive equipment is required:
LCD and camera for Mobile phones
Computers and printers
Communication systems
MCU boards
1
Micro QFN 16L 3.3 mm x 1.5 mm
(bottom view)

Figure 1. Basic cell configuration

Input 1
Typical line capacitance = 14 pF typ. @ 2.5 V
170 Ω
Output 1
Description
The EMIF08-1502M16 is an 8-line, highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference.
This filter includes an ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 15 kV on the input pins.
TM: IPAD is a trademark of STMicroelectronics
February 2008 Rev 2 1/10
www.st.com
Characteristics EMIF08-1502M16

1 Characteristics

Figure 2. Pin configuration (top view)

Pin 1
Input 1
Input 21
Pin 2
Input 3
Pin 3
Input 4
Pin 4
Input 5
Pin 5
Input 6
Pin 6
Input 7
Pin 7
Input 8
Pin 8

Table 1. Absolute ratings (limiting values)

Output 1
Output 2
Output 3
Output 4
Output 5
Output 6
Output 7
Output 8
Pin 16
Pin 15
Pin 14
Pin 13
Pin 12
Pin 11
Pin 10
Pin 9
Symbol Parameter Value Unit
ESD IEC 61000-4-2, air discharge on input pins
V
ESD IEC 61000-4-2, contact discharge on input pins
PP
ESD IEC 61000-4-2, contact discharge on output pins
T
T
T
Maximum junction temperature 125 °C
j
Operating temperature range - 40 to + 85 °C
op
Storage temperature range - 55 to + 150 °C
stg
2/10
15
8
kV
4
EMIF08-1502M16 Characteristics
Table 2. Electrical characteristics (T
Symbol Parameter
V
BR
I
RM
V
RM
V
CL
R
d
I
PP
R
I/O
C
line
amb
= 25 °C)
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
I
I
F
V
BR
V
V
RM
CL
V
F
I
RM
I
R
I
PP
V
Symbol Test conditions Min. Typ. Max. Unit
V
BR
V
F
I
RM
R
I/O
C
line
IR = 1 mA 6 8 10 V
IF = 10 mA 0.5 1.0 1.5 V
VRM = 3 V per line 100 nA
Tolerance ± 10% 153 170 187 Ω
V
= 2.5 V dc, V
LINE
= 30 mV, F = 1 MHz 12 14 16.5 pF
OSC
Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements
0.00
- 15.00
-
- 30.00
-
- 45.00
-
dB
F (Hz)
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
dB
0.00
0.00
-10.00
-10.00
-20.00
-20.00
-30.00
-30.00
-40.00
-40.00
-50.00
-50.00
-60.00
-60.00
-70.00
-70.00
-80.00
-80.00
-90.00
-90.00
-100.00
-100.00
100.0k 1.0M 10.0M 100.0M 1.0G
100.0k 1.0M 10.0M 100.0M 1.0G
F (Hz)
3/10
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