ST EMIF08-1005M16 User Manual
EMIF08-1005M16
8-line IPAD™
low capacitance EMI filter and ESD protection in micro QFN package
Features
■ EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering:
– Greater than -34 dB attenuation at
frequencies from 900 MHz to 1.8 GHz
■ Cut-off frequency: 100 MHz
■ Very low PCB space consuming:
3.3 mm x 1.5 mm
■ Very thin package: 0.6 mm max.
■ High efficiency in ESD suppression on inputs
pins (IEC 61000-4-2 level 4)
■ High reliability offered by monolithic integration
■ High reduction of parasitic elements through
integration
■ Lead-free package
Complies with following standards:
■ IEC 61000-4-2 level 4 input and output pins
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ MIL STD 883G - Method 3015-7 Class 3B
(all pins)
1
Micro QFN 16L 3.3 mm x 1.5 mm
(bottom view)
Figure 1. Basic cell configuration
Input 1
Typical line capacitance = 45 pF typ. @ 0V
100 Ω
Output 1
Description
The EMIF08-1005M16 is an 8-line, highly
integrated device designed to suppress EMI/RFI
noise in all systems exposed to electromagnetic
interference.
This filter includes an ESD protection circuitry,
Applications
Where EMI filtering in ESD sensitive equipment is
required:
■ LCD and camera for mobile phones
■ Computers and printers
■ Communication systems
■ MCU boards
February 2008 Rev 2 1/10
which prevents damage to the application when
subjected to ESD surges up to 15 kV on the input
or output pins.
TM: IPAD is a trademark of STMicroelectronics
www.st.com
Characteristics EMIF08-1005M16
1 Characteristics
Figure 2. Pin configuration (top view)
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
Pin 6
Pin 7
Pin 8
Input 1
Input 21
Input 3
Input 4
Input 5
Input 6
Input 7
Input 8
Output 1
Output 2
Output 3
Output 4
Output 5
Output 6
Output 7
Output 8
Pin 16
Pin 15
Pin 14
Pin 13
Pin 12
Pin 11
Pin 10
Pin 9
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
T
T
T
ESD IEC 61000-4-2, air discharge
PP
ESD IEC 61000-4-2 contact discharge
Maximum junction temperature 125 °C
j
Operating temperature range - 40 to + 85 °C
op
Storage temperature range - 55 to + 150 °C
stg
2/10
15
15
kV
EMIF08-1005M16 Characteristics
Table 2. Electrical characteristics (T
Symbol Parameter
V
BR
I
RM
V
RM
V
CL
R
d
I
PP
R
I/O
C
line
amb
= 25 °C)
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input and Output
Input capacitance per line
I
I
F
V
BR
V
V
RM
CL
V
F
I
RM
I
R
I
PP
V
Symbol Test conditions Min. Typ. Max. Unit
V
BR
V
F
I
RM
R
I/O
C
line
IR = 1 mA 6 8 10 V
IF = 10 mA 0.5 1.0 1.5 V
VRM = 3 V per line 200 nA
Tolerance ± 10% 90 100 110 Ω
V
= 0 V dc, V
LINE
= 30 mV, F = 1 MHz 38 45 52 pF
OSC
Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements
0.00
- 10.00
- 20.00
- 30.00
- 40.00
dB
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz
- 30.00
- 60.00
- 90.00
- 120.00
0.00
dB
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
f/Hz
3/10
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